Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS5917855B2 - Semiconductor support and method for manufacturing a semiconductor device using the semiconductor support - Google Patents
[go: Go Back, main page]

JPS5917855B2 - Semiconductor support and method for manufacturing a semiconductor device using the semiconductor support - Google Patents

Semiconductor support and method for manufacturing a semiconductor device using the semiconductor support

Info

Publication number
JPS5917855B2
JPS5917855B2 JP52000475A JP47577A JPS5917855B2 JP S5917855 B2 JPS5917855 B2 JP S5917855B2 JP 52000475 A JP52000475 A JP 52000475A JP 47577 A JP47577 A JP 47577A JP S5917855 B2 JPS5917855 B2 JP S5917855B2
Authority
JP
Japan
Prior art keywords
semiconductor
support
semiconductor support
protruding pieces
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52000475A
Other languages
Japanese (ja)
Other versions
JPS5385159A (en
Inventor
弘志 「いそ」谷
光 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP52000475A priority Critical patent/JPS5917855B2/en
Publication of JPS5385159A publication Critical patent/JPS5385159A/en
Publication of JPS5917855B2 publication Critical patent/JPS5917855B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は、半導体装置の製造にあたつて高精度で、かつ
自動化を可能とする半導体支持体およびこの半導体支持
体を用いた製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor support that enables highly accurate and automated manufacturing of semiconductor devices, and a manufacturing method using this semiconductor support.

5 従来、フィルム等をテープ状となし、この上で連続
的に半導体素子を組み立てるテープキャリヤ方式という
製造方法が知られている。
5. Conventionally, there has been known a manufacturing method called the tape carrier method, in which a film or the like is formed into a tape, and semiconductor elements are successively assembled thereon.

この従来のテープキャリヤ方式は半導体素子にリード線
を取りつける所までは工程を自動化することができる1
0が、組み立てられた半導体素子を回路基板等に取りつ
けて半導体装置とするためには、ひとつひとつの半導体
素子をテープから切り取り、これを回路基板上でそれぞ
れ位置合せをした後に半導体素子のリード線と回路基板
との接合をひとつひとつ15行なわなければならない。
この従来の方法では、半導体装置の回路基板が比較的大
きなもので、半導体素子もそのリード線形状が大きくリ
ード線間隔も荒い場合は取り扱いも容易であるが、高密
度化を要求される半導体装置では、半導体素子自体フ0
も小さくなり実際の製造では位置合せやリード接合時
の取り扱いが困難になるとともに、半導体装置の製造工
程の自動化もできなかつた。本発明は、上記従来の欠点
を解決するもので、半導体素子をテープ状の半導体支持
体の上に組みノ5 立て、そのまま順番こ半導体素子を
回路基板に取りつけ、その後半導体素子と半導体支持体
を切り離すことのできる半導体支持体と、この半導体支
持体を用いた半導体装置の製造方法を提供し、以下にそ
の一実施例を図面とともに説明する・■01は可撓性を
有する有機絶縁フィルムをテープ状に形成した半導体支
持体である。
This conventional tape carrier method can automate the process up to the point where lead wires are attached to semiconductor devices.
In order to make a semiconductor device by attaching the assembled semiconductor elements to a circuit board, etc., each semiconductor element is cut out from the tape, aligned on the circuit board, and then connected to the lead wires of the semiconductor element. Each bond to the circuit board must be made 15 times.
This conventional method is easy to handle if the circuit board of the semiconductor device is relatively large and the semiconductor element has a large lead wire shape and the spacing between the lead wires is rough. Now, the semiconductor element itself is
The size of the semiconductor device also became smaller, making it difficult to handle during alignment and lead bonding in actual manufacturing, and it was also impossible to automate the manufacturing process of semiconductor devices. The present invention solves the above-mentioned conventional drawbacks by assembling a semiconductor element on a tape-shaped semiconductor support, attaching the semiconductor element to a circuit board in that order, and then attaching the semiconductor element and the semiconductor support. We provide a semiconductor support that can be separated and a method for manufacturing a semiconductor device using this semiconductor support, and an example thereof will be explained below with drawings. This is a semiconductor support formed into a shape.

2はこの半導体支持体1に2本の片持ちはり出し形の突
出片3、3を残して略E形になるように設けた穴で、こ
の穴2はテープの方向に互いに間隔を有して多数、”5
−連に設けられている。
Reference numeral 2 denotes a hole formed in the semiconductor support 1 so as to have a substantially E shape, leaving two cantilevered projecting pieces 3, 3, and the holes 2 are spaced apart from each other in the tape direction. Many, “5
- Provided in series.

4、4は細い幅の金属箔導体で形成したリード線で、前
記突出片3、3のそれぞれに直角に交差して、多数が互
いに平行に並んで固着され、かつこのリード線4の両端
は突出片3の幅を越えて前記穴2の空間◆こ突出してい
る。
Reference numerals 4 and 4 denote lead wires made of thin metal foil conductors, which intersect each of the protruding pieces 3 at right angles and are fixed in large numbers in parallel to each other, and both ends of the lead wires 4 are The space ◆ of the hole 2 protrudes beyond the width of the protruding piece 3.

5,5は前記半導体支持体1の両縁にそれぞれ一列に設
けられたスプロケツト穴である。
Reference numerals 5 and 5 designate sprocket holes provided in a row on both edges of the semiconductor support 1, respectively.

ここで半導体支持体1に形成した有機絶縁フイルムとし
ては、厚さ約0.1mmのポリイミド樹脂フイルムを用
いたが、他にもポリエステルフイルム等可撓性を有する
絶縁フイルムが用いられる。またりード線4は、厚さ約
35μの銅箔を用いて、フオトエツチング法により幅約
50μ、リード線間ピツチ約100μに形成され、錫ま
たは金によりメツキが施されたものである。第2図は前
記半導体支持体1に半導体素子6を取りつける工程を示
したものである。
Here, a polyimide resin film having a thickness of about 0.1 mm was used as the organic insulating film formed on the semiconductor support 1, but other flexible insulating films such as polyester film may also be used. The lead wires 4 are formed by photoetching using copper foil with a thickness of about 35 microns to have a width of about 50 microns and a pitch between the leads of about 100 microns, and are plated with tin or gold. FIG. 2 shows the process of attaching the semiconductor element 6 to the semiconductor support 1. As shown in FIG.

半導体素子6は、例えばシリコンチツプ7に形成された
ダイオードアレイ、半導体集積回路素子等で、このひと
つの面には金で突起状となした接続端子8,8が設けら
れている。上記半導体素子6は、前記略E形の穴2に順
次取りつけられるよう同一の間隔で他のテープ状体の上
にひとつずつ設けられている。前記半導体素子6の接続
端子8,8と前記半導体支持体1のリード線4,4とは
熱圧着により接合される。このとき、リード線4に錫メ
ツキが施してあれば、接続端子8の金の突起との間で金
−錫共晶による接合となり、リード線4に金メツキが施
してあれば、金一金の熱圧着接合となる。また半田によ
る接合方法も可能である。この工程は自動化され、半導
体素子6は順次半導体支持体1上でリード線4,4を接
合した形に組み立てられてゆく。第3図は組み上がつた
半導体素子6を取りつけた半導体支持体1を用いて回路
基板9にこの半導体素子6を接合する工程を示したもの
である。
The semiconductor element 6 is, for example, a diode array, a semiconductor integrated circuit element, etc. formed on a silicon chip 7, and one surface thereof is provided with protruding connection terminals 8 made of gold. The semiconductor elements 6 are provided one by one on other tape-like bodies at the same intervals so that they can be sequentially attached to the approximately E-shaped holes 2. The connection terminals 8, 8 of the semiconductor element 6 and the lead wires 4, 4 of the semiconductor support 1 are joined by thermocompression bonding. At this time, if the lead wire 4 is tin-plated, it will be bonded to the gold protrusion of the connection terminal 8 by gold-tin eutectic, and if the lead wire 4 is gold-plated, it will be bonded with gold-tin eutectic. The result is thermocompression bonding. A joining method using solder is also possible. This process is automated, and the semiconductor elements 6 are sequentially assembled on the semiconductor support 1 with the lead wires 4, 4 joined together. FIG. 3 shows the process of bonding the semiconductor element 6 to the circuit board 9 using the semiconductor support 1 to which the assembled semiconductor element 6 is attached.

回路基板9は印刷配線等が施された基板である。この上
に前記半導体支持体1を、そのリード線4,4側の面が
対向するように近づけ、半導体支持体1を動かすことに
よつて半導体素子6と回路基板9の配線パターンとの位
置合せを行なつた後、熱圧着または半田づけなどの方法
でリード線4,4と配線部分との接合を行なう。ひとつ
の半導体素子についてリード線4,4と回路基板9との
接合が完了したのち、半導体支持体1の突出片3,3の
つけ根付近でこの突出片3,3を切析し、半導体支持体
1から半導体素子6を分離する。このようにして順次半
導体素子6を回路基板9上へ接合し、半導体装置を製造
する。上記の実施例では、半導体装置の製造にめたつて
、回路基板9上にリード接合する時半導体素子6の保持
、位置合せ、送りなどをスプロケツト穴5,5を利用し
て半導体支持体1を保持することにより行なうことがで
きるため、半導体素子6の形状や寸法にかかわらず、確
実で精度の高い製造技術を実現できる。
The circuit board 9 is a board on which printed wiring and the like are provided. On top of this, the semiconductor support 1 is brought close so that the surfaces on the lead wires 4, 4 side face each other, and by moving the semiconductor support 1, the semiconductor element 6 and the wiring pattern of the circuit board 9 are aligned. After performing this, the lead wires 4, 4 and the wiring portion are joined by a method such as thermocompression bonding or soldering. After the bonding between the lead wires 4, 4 and the circuit board 9 for one semiconductor element is completed, the protruding pieces 3, 3 of the semiconductor support 1 are cut near the base of the protruding pieces 3, 3, and the semiconductor support The semiconductor element 6 is separated from the semiconductor element 1. In this way, the semiconductor elements 6 are sequentially bonded onto the circuit board 9 to manufacture a semiconductor device. In the above embodiment, the sprocket holes 5, 5 are used to hold, align, and feed the semiconductor element 6 when the leads are bonded onto the circuit board 9 in preparation for manufacturing a semiconductor device. Since this can be carried out by holding the semiconductor element 6, a reliable and highly accurate manufacturing technique can be realized regardless of the shape and dimensions of the semiconductor element 6.

特に第3図に示したように、半導体素子6同士が極めて
接近して回路基板9上に接合される高密度の半導体装置
においては、半導体支持体1に略E形の穴2があり、そ
の中で半導体素子を保持しているのは、2本の片持ちは
り出し形の突出片3,3であつてこの突出片3,3の一
端は半導体支持体1の本体から離れているので、フイル
ム体からなる半導体支持体1をその町撓性を利用して大
きく曲げることにより半導体素子6を接近させて回路基
板9上へ接合しやすくすることができる。即ち、突出片
3,3が片持ち形であるため半導体支持体1上での半導
体素子6同士の間隔11に比べ、回路基板9上に接合さ
れた後の半導体素子6同士の間隔12の方をより小さく
することが容易となり、特に高密度自動化に大きな効果
がある。例えば高密度の半導体装置として、多数のダイ
オードアレイを用いてマトリクス回路を形成した感熱記
録ヘツドでは、記録密度を上げるために1m1L当り4
〜10イ固のダイオードアレイを接続する必要があり、
この場合に上記実施例の半導体支持体1を用いれば特に
効果が大きく、従来の数倍の能率を実現することができ
た。また半導体支持体1を保持したまま、半導体素子6
の組み立ても半導体装置への接合をも行なうことができ
るので半導体素子から半導体装置までの一貫しこ工程の
自動化が可能となるすぐれた特徴を有している。以上の
ように本発明は、可撓性有機絶縁フイルム体に相互に間
隔を有して設けた一連の略E形の穴と、この略E形の穴
を形成する2本の片持ちはり出し形の突出片のそれぞれ
に、この突出片と交差して突出片の幅から両端を突出さ
せて設けた多数の細幅金属導体からなるリード線とを有
して形成した半導体支持体と、さらにこの半導体支持体
に半導体素子を取りつけ、回路基板上に前記りード線を
接合した後、この半導体素子を半導体支持体から切断分
離する製造方法とにより、半導体素子を高密度に接合す
る場合でも、前記突出片が片持ちはり出し形であるので
、半導体支持体を曲げながら保持して高精度にかつ効率
的に行なうことができるとともに、半導体素子から半導
体装置まで一貫した工程の自動化が実現できる優れた半
導体支持体および半導体支持体を用いた半導体装置の製
造方法を提供するものである。
Particularly, as shown in FIG. 3, in a high-density semiconductor device in which semiconductor elements 6 are bonded very close to each other on a circuit board 9, the semiconductor support 1 has a substantially E-shaped hole 2; What holds the semiconductor element inside are two cantilevered protruding pieces 3, 3, and one end of these protruding pieces 3, 3 is separated from the main body of the semiconductor support 1. By greatly bending the semiconductor support 1 made of a film by taking advantage of its flexibility, it is possible to bring the semiconductor elements 6 close to each other and make it easier to bond them onto the circuit board 9. That is, since the protruding pieces 3, 3 are cantilevered, the distance 12 between the semiconductor elements 6 after being bonded on the circuit board 9 is smaller than the distance 11 between the semiconductor elements 6 on the semiconductor support 1. This makes it easier to make the size smaller, which has a particularly great effect on high-density automation. For example, in a thermal recording head, which is a high-density semiconductor device and uses a large number of diode arrays to form a matrix circuit, in order to increase the recording density,
It is necessary to connect ~10 hard diode arrays,
In this case, if the semiconductor support 1 of the above embodiment is used, the effect is particularly great, and an efficiency several times higher than that of the conventional method can be achieved. Further, while holding the semiconductor support 1, the semiconductor element 6 is
Since it can be assembled and bonded to semiconductor devices, it has an excellent feature that allows automation of the entire process from semiconductor elements to semiconductor devices. As described above, the present invention provides a series of approximately E-shaped holes provided at intervals in a flexible organic insulating film body, and two cantilevered protrusions forming the approximately E-shaped holes. A semiconductor support formed by having each of the shaped protruding pieces with lead wires made of a large number of narrow metal conductors intersecting with the protruding pieces and having both ends protruding from the width of the protruding pieces; Even when semiconductor elements are bonded at high density by a manufacturing method in which a semiconductor element is attached to this semiconductor support, the lead wire is bonded onto a circuit board, and then the semiconductor element is cut and separated from the semiconductor support, Since the protruding piece has a cantilevered shape, it is possible to hold the semiconductor support while bending it and perform it with high precision and efficiency, and it is also advantageous in that it can realize consistent automation of processes from semiconductor elements to semiconductor devices. The present invention provides a semiconductor support and a method for manufacturing a semiconductor device using the semiconductor support.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の半導体支持体の一実施例を示す斜視図
、第2図は半導体支持体に半導体素子を取りつける工程
の説明図、第3図は半導体支持体を用いて半導体素子を
回路基板に接合する工程の説明図である。 1・・・・・・半導体支持体、2・・・・・・穴、3・
・・・・・突出片、4・・・・・・リード線、6・・・
・・・半導体素子、9・・・・・・回路基板。
Fig. 1 is a perspective view showing one embodiment of the semiconductor support of the present invention, Fig. 2 is an explanatory diagram of the process of attaching a semiconductor element to the semiconductor support, and Fig. 3 is a circuit diagram of a semiconductor element using the semiconductor support. FIG. 3 is an explanatory diagram of a process of bonding to a substrate. 1... Semiconductor support, 2... Hole, 3.
...Protruding piece, 4...Lead wire, 6...
...Semiconductor element, 9...Circuit board.

Claims (1)

【特許請求の範囲】 1 可撓性有機絶縁フィルム体に相互に間隔を有して設
けた一連の略E形の穴と、この略E形の穴を形成する2
本の片持ちはり出し形の突出片のそれぞれに、この突出
片と交差して突出片の幅から両端を突出させて設けた多
数の細幅金属導体からなるリード線とを有したことを特
徴とする半導体支持体。 2 可撓性有機絶縁フィルム体に相互に間隔を有して設
けた一連の略E形の穴と、この略E形の穴を形成する2
本の片持ちはり出し形の突出片のそれぞれに、この突出
片と交差して突出片の幅から両端を突出させて設けた多
数の細幅金属導体からなるリード線とを有する半導体支
持体に、半導体素子を前記リード線と前記半導体素子の
接続端子とを接合することにより取りつけ、さらに回路
基板上に前記リード線を接合した後前記半導体素子を前
記半導体支持体から切断分離することを特徴とする半導
体支持体を用いた半導体装置の製造方法。
[Scope of Claims] 1. A series of approximately E-shaped holes provided at intervals in a flexible organic insulating film body, and 2.
Each of the book's cantilever-shaped protruding pieces has lead wires made of a large number of narrow metal conductors that intersect with the protruding pieces and have both ends protruding from the width of the protruding pieces. A semiconductor support. 2 A series of approximately E-shaped holes provided at intervals in a flexible organic insulating film body, and 2 holes forming the approximately E-shaped holes.
A semiconductor support having, on each of the cantilever-shaped protruding pieces of a book, lead wires made of a large number of narrow metal conductors that intersect with the protruding pieces and have both ends protruding from the width of the protruding pieces. , the semiconductor element is attached by bonding the lead wires and connection terminals of the semiconductor element, and further, after the lead wires are bonded onto the circuit board, the semiconductor element is cut and separated from the semiconductor support. A method for manufacturing a semiconductor device using a semiconductor support.
JP52000475A 1977-01-05 1977-01-05 Semiconductor support and method for manufacturing a semiconductor device using the semiconductor support Expired JPS5917855B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52000475A JPS5917855B2 (en) 1977-01-05 1977-01-05 Semiconductor support and method for manufacturing a semiconductor device using the semiconductor support

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52000475A JPS5917855B2 (en) 1977-01-05 1977-01-05 Semiconductor support and method for manufacturing a semiconductor device using the semiconductor support

Publications (2)

Publication Number Publication Date
JPS5385159A JPS5385159A (en) 1978-07-27
JPS5917855B2 true JPS5917855B2 (en) 1984-04-24

Family

ID=11474797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52000475A Expired JPS5917855B2 (en) 1977-01-05 1977-01-05 Semiconductor support and method for manufacturing a semiconductor device using the semiconductor support

Country Status (1)

Country Link
JP (1) JPS5917855B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4857493A (en) * 1992-09-16 1994-04-12 James E. Clayton A thin multichip module
US5731633A (en) * 1992-09-16 1998-03-24 Gary W. Hamilton Thin multichip module
JP2812627B2 (en) * 1992-10-30 1998-10-22 三菱電機株式会社 Tape carrier, semiconductor device test method and apparatus
US7598760B1 (en) 2008-05-21 2009-10-06 Qualitau, Inc. High temperature ceramic die package and DUT board socket

Also Published As

Publication number Publication date
JPS5385159A (en) 1978-07-27

Similar Documents

Publication Publication Date Title
US6589810B1 (en) BGA package and method of fabrication
JP3588801B2 (en) Method for manufacturing semiconductor device
US4949158A (en) Semiconductor device
JPWO1999035683A1 (en) Semiconductor device, its manufacturing method, and electronic device
JPH0982741A (en) Structure of chip carrier and manufacturing method thereof
JPS5917855B2 (en) Semiconductor support and method for manufacturing a semiconductor device using the semiconductor support
US3978516A (en) Lead frame assembly for a packaged semiconductor microcircuit
JPS61160946A (en) Connection structural body for semiconductor device
US6006981A (en) Wirefilm bonding for electronic component interconnection
JPH0558657B2 (en)
JPS59222947A (en) Semiconductor device and manufacture thereof
JPH01309362A (en) Multichip semiconductor device
JP4257534B2 (en) Manufacturing method of semiconductor device
JP2507564B2 (en) Multi-chip semiconductor device and manufacturing method thereof
JPH05235091A (en) Film carrier semiconductor device
JP2553615B2 (en) Film carrier
JPH01128532A (en) Manufacture of semiconductor device
JPS5854499B2 (en) Manufacturing method of semiconductor device
JPH0331086Y2 (en)
JPH07201928A (en) Film carrier and semiconductor device
JP3508683B2 (en) Semiconductor device and manufacturing method thereof
JPS6343897B2 (en)
JPH033972Y2 (en)
JP2555878B2 (en) Method of manufacturing film carrier tape
JPH04241447A (en) Semiconductor module