JPS5854499B2 - Manufacturing method of semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of mounting a semiconductor element using an insulating film wiring body.

(b) Due to conventional technology and problems, in the assembly process of semiconductor integrated circuit (IC) elements, which requires high-density mounting, polyide film surface with excellent heat resistance is used as one of the mounting means. As a result of the development of the so-called film carrier, in which lead wires or wiring bodies are formed, not only has it been rapidly automated, but it has also become possible to perform high-density packaging, special packaging, and a high degree of integration.

One example is the TAB (TapeOut) described below.
There is an omated bonding method.

As shown in Figure 1a, a tape-shaped polyimide film 1 having a width of about 3.5 frrm is prepared by applying adhesive 2 to the width W of the central band on one side, and then As shown, alignment holes 3 are made in both side bands using a press or the like.

All subsequent steps are performed while winding onto a reel using these holes as a guide.

Next, as shown in Figure C, a rectangular (including square) element housing hole 4 for accommodating a semiconductor element to be mounted in the center band of the polyimide film 1 is punched out using a press.

Then, as shown in FIG. d, the polyimide film 10
A metal foil 5 such as a copper (Cu) foil having a thickness of about 35 μm is adhered to the surface using the adhesive 2, and the metal foil 5 is further photo-etched into a predetermined shape.

Then, electroless plating of tin (Sn) is applied to the patterned metal foil 5 to form leads 6 as shown in FIG.

As shown in FIG. For example, by aligning the position with a gold (Au) bump 8, lowering a bonding tool to the tip of the lead 6, applying pressure, and heating, the Sn of the lead 5 and the gold bump of the semiconductor element become an alloy. Connection is integrated.

Thereafter, the leads 6 are cut at the point indicated by the dashed line in the figure, that is, toward the inside of the element housing hole 4, and at the same time, or after the semiconductor element 7 is taken out together with the leads 6, the leads 6 are cut as shown in FIG. The outer end of the lead 6 is bent in two steps, and the outer end of the lead 6 is aligned with the wiring pattern 10 of an insulated circuit board 9 such as a ceramic board, on which a brazing material such as solder is applied in advance, and heated under pressure using a bonding tool. Then, the lead 6 is connected to the wiring pattern 10.

During the above steps, the leads 6 may be deformed when connecting the inner tips of the leads 6 to the bumps 8 of the semiconductor element 7, when cutting and bending the leads 6, or due to handling after cutting.

When the leads 6 are deformed, since the spacing between the saws 160 is very narrow, adjacent leads may come into contact with each other, or the ceramic substrate 9 may
When connecting to the upper wiring pattern 10, there are problems such as the lead 6 coming into contact with the adjacent wiring pattern 10 (15).

(C) Purpose of the Invention The purpose of the present invention is to provide a method for manufacturing a semiconductor device that eliminates such problems and allows easy cutting of an insulating film wiring body without causing lead deformation or pitch deviation. There is a particular thing.

(Φ Structure of the Invention The present invention is characterized by an insulating film, an element accommodating hole opened in the insulating film, and a plurality of elements fixed on the insulating film with their tips protruding into the element accommodating hole. A semiconductor element is placed in the element accommodating hole of an insulating film wiring body having body leads, and an electrode provided on the surface of the semiconductor element is connected to a tip of the lead that can protrude into the element accommodating hole. Then, the other end of the lead is cut together with the supporting part of the insulating film to which the lead is fixed, and then the lead is connected to a wiring pattern formed on a predetermined support substrate. The device accommodating hole is peeled so that the supporting portion of the insulating film that has notches at the four corners so that the support portion of the insulating film for fixing the lead can protrude into the device accommodating hole, and the supporting portion is cut across the device accommodating hole.

(e) Examples of the invention An embodiment of the present invention will be described below with reference to the drawings.

FIG. 2 is a diagram showing an embodiment of the present invention, and FIGS. 2A and 2B are completely the same as FIGS.

That is, as shown in Fig. 2a, prepare a polyimide film 1 having a width of, for example, 3 or 5 pieces and coated with adhesive 2 in a width W on the central band of one side. As shown in FIG. 2, alignment holes 3 are made using a press or the like in the adhesive-free areas of both side bands of the polyimide film 10.

All subsequent steps are performed while winding onto a reel using these holes as a guide.

Next, as shown in Figure C, an element housing hole 14 for accommodating an element is punched out in the central band of the tape using a press or the like.

However, the shape of the element housing hole 14 is rectangular in the conventional manufacturing method, whereas in this embodiment, the shape is a rectangle M with a notch 11 provided therein.

Next, as shown in FIG. 4D, a copper (Q) foil 5 having a thickness of about 35 μm is adhered to the surface of the polyimide film 1 using the adhesive, and the copper foil 5 is photo-etched into a predetermined shape.

Then, electroless plating of tin (Sn) is applied to the patterned copper foil 5 to form leads 6 as shown in FIG.

As described above, in this embodiment, the support portion 15 of the lead 6 is
is formed to protrude inside the element housing hole 14.

Next, as shown in FIG. By pressing a bonding tool that is not attached to the tip of the lead 6 and applying pressure and heating, Sn and Au become an alloy and are connected and integrated.

Next, the lead 6 is cut together with the insulating film at the portion indicated by the dashed-dotted line shown in FIG.

Note that g in the figure is a cross section taken along line xx of g, and 8 is a bump.

As a result, as shown in the figure, the outer ends of the leads 6 are fixed by the insulating film legs 12 in a state in which the pitch is maintained accurately, and are separated from the insulating film tape.

Next, as shown in Figure U, the lead 6 is bent, for example, into two stages, and the outer end of the lead 6, that is, the part to which the insulating film ridge 12 is attached, is further bent upward as required.

This step of bending the leads may be performed using a press or the like after cutting the leads, or may be performed at the time of cutting the leads.

Thereafter, as shown in FIG. J, the inside of the part of the insulating film of the lead 6 to which the beam 12 is attached is aligned with the pre-soldered wiring pattern 10 of the ceramic board 9, etc., and then soldered using a bonding tool (not shown). The leads 6 are connected to the wiring pattern 10 by pressing and heating.

During this time, since the leads 6 are fixed to the insulating film sills 12, the pitch will not be distorted, and therefore alignment with the wiring pattern is easy and no misalignment will occur.

Further, the leads are not deformed during bending or handling.

The insulating film ledge 12 is usually removed last, but if there is sufficient mounting space, it may be left as it is an insulator and harmless in terms of the electrical characteristics of the semiconductor device.

As explained above, according to the present invention, the semiconductor device is
Since the lead 6 is not deformed, it is easy to position the lead 6 when connecting it to the wiring pattern or electrode on the package or circuit board, and alignment is facilitated, which not only improves work efficiency but also reduces manufacturing yield. As a result, assembly automation becomes even easier.

FIG. 3 is a diagram provided to facilitate understanding of the effects of the above-described embodiment, and shows manufacturing steps by a conventional manufacturing method.

That is, the conventional insulating film wiring body does not have cutouts at the four corners of the element housing hole 4, as shown in the figure.

Therefore, in order to obtain the configuration shown in the second diagram, the insulating film 1 must be cut as shown by the broken line in the diagram, which makes the shape of the cutter complicated.

It is not always easy to create and adjust a cutter with such a complicated shape.

On the other hand, in the embodiment of the present invention, the lead 6
By making the support part 15 protrude into the element housing hole 14, it is only necessary to cut it across this part.
C A linear cutter can be used, and manufacturing and adjustment of the cutter are extremely simple.

In the above embodiment, the leads 6 are made of Cu plated with Sn, but the material of the leads 6 is not limited to this, and may vary depending on the material and shape of the electrodes of the semiconductor element, The selection may be made as appropriate depending on the wiring pattern of the package or circuit board, the material of the electrodes, etc.

In the above embodiment, the lead 6 was bent for bonding, but it is not necessary to bend the lead 6 in cases such as face-down bonding.
not.

(f) Detailed Description of the Invention According to the present invention, the manufacturing operation of semiconductor devices becomes accurate and easy, and not only the work efficiency and manufacturing yield are improved, but also the automation of the assembly process becomes even easier.

[Brief explanation of the drawing]

FIG. 1 is a process sectional view showing a conventional method for manufacturing a semiconductor device, FIG. 2 is a process sectional view showing an embodiment of the manufacturing method of the present invention, and FIG. 3 is a conventional manufacturing method shown for reference. FIG. In the figure, 1 is an insulating film, 2 is an adhesive, 3 is an alignment hole, 4 and 14 are element housing holes, 5 is a metal foil, 6 is a lead, T is a semiconductor element, 8 is an electrode, and 9 is a package or a circuit board, 10 is a wiring pattern, 11 is a notch, 1
Reference numeral 2 indicates a leg of the insulating film, and reference numeral 15 indicates a support portion.

Claims (1)

[Claims] 1. An insulating film wiring body having an insulating film, an element accommodation hole opened in the insulating film, and a plurality of leads fixed on the insulating film and disposed with their tips protruding into the element accommodation hole. A semiconductor element is placed in the element housing hole, an electrode provided on the surface of the semiconductor element is connected to a tip of the lead that can protrude into the element housing hole, and then the other end of the lead is connected to Through a series of steps of cutting the insulating film together with the supporting portion to which the lead is fixed, and then connecting the lead to a wiring pattern formed on a predetermined support substrate, the element receiving hole is cut out at the four corners. 1. A method of manufacturing a semiconductor device, characterized in that a supporting portion of an insulating film having a portion and fixing the lead is shaped so as to protrude into an element housing hole, and the supporting portion is cut across the supporting portion.