JPS5917978B2 - Manufacturing method of semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a substrate for a semiconductor device having a pattern of conductive strips on an insulating film.

In recent years, semiconductor devices used in watches, calculators, calculating machines, etc. are made smaller, more reliable, and lower in manufacturing cost by bonding semiconductor elements to conventional ceramic or metal frames using thin gold or aluminum wires. Instead of the method of Au
, a Vi semiconductor by simultaneous bonding to a flexible insulating film-like substrate (hereinafter referred to as carrier tape) made of an organic material such as polyimide or polyester resin having conductor strips such as 5Cu plated with Sn, etc. Many methods of bonding devices have been used.

10 As shown in FIG. 1, an example of which is a perspective view of the main part, this carrier tape is slit to a certain width such as 35Iltm, and has sprocket holes 1a on both sides and holes Ib and Ic in the center for connecting semiconductor elements. is patterned on the insulating film 1 on which VC is formed.
It is formed from conductor strips 2 made of Cu or the like plated with Au, Sni solder or the like.

The carrier tape constructed in this way is generally used to improve the reliability of the bonding of semiconductor elements and the connection of a part of the conductor wire 2 to which the semiconductor elements are bonded to devices such as watches and calculators. In this case, Au electrolytic plating is used for plating the conductor strips 2. The conventional manufacturing method for this carrier tape is to attach a Cu foil with a thickness of about 35 μm to an insulating film 1 in which necessary holes 1a, 1b, and Ic are punched out, as shown in the cross-sectional view of the main part in FIG. After pasting, thin strips are patterned on the surface by photolithography, unnecessary portions of Cu are etched away in the pattern to form a thin strip base 2a, and then this surface is electrolytically coated with l!
) is formed by applying Au plating and providing an Au plating layer 302b. However, according to the above conventional manufacturing method. An Au plating layer 2b is formed on the entire surface of the conductor strip 2, and all the conductor strips 2 must be connected to the conductive wiring 3 for electrolytic plating as shown in the plan view of the main part in FIG. Because of the restrictions that cannot be met, there are drawbacks such as the inability to check the continuity of the bonding portion of the semiconductor element. Therefore. The purpose of the present invention was to eliminate the drawbacks of the conventional manufacturing method described above, and to provide corrosion resistance against etching of the conductor strip in the pattern of the conductor strip on the conductor base when forming the conductor strip. The top surface is plated with Au,
This Au plating layer is used as a mass. It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a substrate is patterned using a method of manufacturing a semiconductor device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a semiconductor device according to the present invention will be described in detail below with reference to the drawings. FIGS. 4a to 4g are cross-sectional views of essential parts for explaining an embodiment of the method for manufacturing a semiconductor device according to the present invention.

First, in Figure a, sprocket hole 1a. ．． A foil 4 made of a conductive material such as Cu is pasted onto the insulating film 1 in which holes 1b and 1c are formed for receiving semiconductor elements. Next, figure b
As shown in FIG. 2, a photoresist film 5 is applied on the surface of this material foil 4, and a pattern of conductor strips is formed by photolithography. Next, as shown in Figure c, a plating layer 6 of a corrosion-resistant metal such as Ni or Ag is provided on the exposed surface portion of the conductor material foil 4 during etching of the material foil 4, and further, as shown in Figure d, a plating layer 6 of a metal such as Ni or Ag is provided. The electrolytic Au plating layer 2b is formed only on the upper surface of the plating layer 6 on the surface of the material foil 4 on which the conductor strips have been patterned. After that, the photoresist film 5 is removed, and the conductor material foil 4 is etched using the Au plating layer 2b and the plating layer 6 of Ni, Ag, etc. as a mask, as shown in FIG. , as shown in FIG.
The plating layer 6 of Ni, Ag, etc. exposed on the surface is etched away to form conductor strips 7 as shown in FIG. According to such a manufacturing method, the Au plating layer 2b
are formed only on one surface of the conductor strips 7 of the conductor material foil 4, and the patterns of the conductor strips 7 are not electrically connected to each other and are formed in a manner that they are separated from each other. By using Cu, there is a plating layer 6 of Ni, Ag, etc. between the layers of Cu and Au.
It has the effect of preventing diffusion between 6 and 6 reliability.

Further, according to the above manufacturing method, the material, size, and shape of the insulating film are not subject to any restrictions, and the thickness of the base material 6. The shape of the putter 7 and the material of the intermediate plating layer,
There are no restrictions on the thickness of the plating or the thickness of the Au plating.

As explained above, according to the method of manufacturing a semiconductor device according to the present invention, the thickness of the conductor strip can be freely increased, so compared to the conventional method, the thickness of the conductor strip can be increased and the width of the strip can be increased. This makes it possible to freely form conductor strips, resulting in an extremely excellent effect of greatly improving the reliability of conduction of the conductor strips.

[Brief explanation of the drawing]

Figure 1 is a perspective view of the main parts showing an example of carrier tape, Figure 2
Figures 3 and 3 are cross-sectional views of essential parts showing an example of a carrier tape formed by a conventional manufacturing method. Main part plan view, Figure 4a
-g is a cross-sectional process diagram of a main part for explaining one embodiment of a method for manufacturing a substrate for a semiconductor device according to the present invention. 1... Insulating tape 61a... Sprocket hole, 1b, 10... ...hole, 2...conductor strip 62a...strip base 62b...
Au plating layer. 3... Conductive wiring. 4...
・Conductor base foil. 5... Photoresist film, 6.
... Plating layer, 7 ... Conductor strips.

Claims (1)

[Claims] 1. A method for manufacturing a semiconductor device comprising a flexible insulating film having a hole formed in the center for connecting a semiconductor element, and conductive strips formed on the insulating film and having Au plating on the surface thereof. a step of pasting a material foil for forming conductor strips onto a flexible insulating film; a step of applying a plating-resistant and corrosion-resistant resist material onto the material foil to form a predetermined conductor strip pattern; a step of plating a metal layer on the strip pattern portion on the surface of the material foil and an exposed portion on the back side of the foil; a step of plating a gold layer on the metal layer of the strip pattern portion; and a step of removing the resist material. , a semiconductor device comprising the steps of etching a portion of the material foil that is not covered with the metal layer or the gold layer; and corroding the portion of the metal layer that is not covered with the gold layer. Production method.