JPS592176B2 - Assembly method of power semiconductor device - Google Patents
Assembly method of power semiconductor deviceInfo
- Publication number
- JPS592176B2 JPS592176B2 JP53113481A JP11348178A JPS592176B2 JP S592176 B2 JPS592176 B2 JP S592176B2 JP 53113481 A JP53113481 A JP 53113481A JP 11348178 A JP11348178 A JP 11348178A JP S592176 B2 JPS592176 B2 JP S592176B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- semiconductor device
- power semiconductor
- assembly method
- header
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/381—Auxiliary members
Landscapes
- Die Bonding (AREA)
- Dicing (AREA)
Description
【発明の詳細な説明】 本発明は電力用半導体装置の組立方法に関する。[Detailed description of the invention] The present invention relates to a method for assembling a power semiconductor device.
従来電力用半導体装置は第１図に示す如くヘッダー１上
にモリブデン板２を介して半導体チップ３を半田等のろ
う材４で固着して組立ていた。斯る構造では大面積の半
導体チップ３とヘッダー１０との熱膨脹係数の差をモリ
ブデン板２で軽減している。しかしモリブデン板２は非
常に高価であり省くことが望ましい。本発明は斯点に鑑
みてなされたものであＶ、モリブデン板を除去した電力
用半導体装置の組立方法を提供するものである。Conventionally, a power semiconductor device has been assembled by fixing a semiconductor chip 3 on a header 1 via a molybdenum plate 2 with a brazing material 4 such as solder, as shown in FIG. In this structure, the molybdenum plate 2 reduces the difference in coefficient of thermal expansion between the large-area semiconductor chip 3 and the header 10. However, the molybdenum plate 2 is very expensive and it is desirable to omit it. The present invention has been made in view of this point, and provides a method for assembling a power semiconductor device in which the molybdenum plate is removed.
以下に本発明の一実施例を第２図乃至第４図を参照して
詳述する。本発明に用いる半導体チップ１０の上面図を
第２図に示す。半導体チップ１０ぱ４個の分割パターン
１１・・・１１を有しておわ、各パターン１１・・・１
１の境界を分割できる構造となつている。各分割パター
ン１１・・・１１は熱膨脹係数の差からすると一辺７−
以下であることが望ましい。斯る半導体チップ１０は第
３図に示される如く、ヘッダー１２上に半田等のろう材
１３で固着される。An embodiment of the present invention will be described in detail below with reference to FIGS. 2 to 4. FIG. 2 shows a top view of the semiconductor chip 10 used in the present invention. The semiconductor chip 10 has four divided patterns 11...11, each pattern 11...1.
The structure is such that the boundaries of 1 can be divided. Each division pattern 11...11 has one side of 7-
The following is desirable. As shown in FIG. 3, such a semiconductor chip 10 is fixed onto a header 12 with a brazing material 13 such as solder.
この際充分に徐冷を行いシリコンとヘッダー゛１２との
熱膨脹係数の差により生ずるストレスを吸収させなけれ
ばならない。然る後第４図に示すｊ如く回転する薄いダ
イヤモンドホィール等によつて半導体チップ１０の各分
割パターン１１・・・１１の境界上に半導体チップ１０
を分割する切り溝１４を形成し、半導体チップ１０を各
分割バター゛ン１１・・・１１に従つて複数に分割する
。更に前述したろう付けの際のストレスを除去するため
に洗’浄後再加熱し、各分割パターン１１・・・１１毎
に外部リードとの電気的接続を行う。以上に詳述した如
く本発明に依れば大面積の半導体チップを複数個に分割
するため、性能上は大電力を扱え、熱的ストレスを考え
ると小面積であるのであまわ問題とならないのである。At this time, sufficient slow cooling must be performed to absorb the stress caused by the difference in thermal expansion coefficients between the silicon and the header 12. After that, the semiconductor chip 10 is placed on the boundary of each divided pattern 11...11 of the semiconductor chip 10 by a rotating thin diamond wheel or the like as shown in FIG.
A kerf 14 is formed to divide the semiconductor chip 10 into a plurality of pieces according to the dividing patterns 11 . . . 11 . Furthermore, in order to remove the stress during brazing described above, it is reheated after cleaning, and electrical connections with external leads are made for each divided pattern 11...11. As detailed above, according to the present invention, a large-area semiconductor chip is divided into multiple pieces, so in terms of performance, it can handle a large amount of power, and when considering thermal stress, it is not a problem because the area is small. be.
従つて熱的ストレスを軽減できることによりモリプテン
板が不要となク大巾な価格低下ができる。Therefore, by being able to reduce thermal stress, a molypten board is no longer necessary, resulting in a significant price reduction.
第１図ぱ従来例を説明する断面図、第２図は本発明に用
いる半導体チップを説明する上面図、第３図及び第４図
ぱ本発明を説明する断面図である。
１０は半導体チップ、１１は分割パターン、１２はヘッ
ダー、１３ぱろう材、１４は切り溝である。FIG. 1 is a sectional view illustrating a conventional example, FIG. 2 is a top view illustrating a semiconductor chip used in the present invention, and FIGS. 3 and 4 are sectional views illustrating the present invention. 10 is a semiconductor chip, 11 is a division pattern, 12 is a header, 13 is a wax material, and 14 is a cut groove.
Claims (1)
ー上にろう付した後前記半導体チップを分割パターンに
従つて切り溝で複数に分割し、各分割パターンに外部リ
ードとの電気的接続を行うことを特徴とする電力用半導
体装置の組立方法。1. A semiconductor chip having a plurality of division patterns is brazed onto a header, and then the semiconductor chip is divided into a plurality of parts by grooves according to the division patterns, and each division pattern is electrically connected to an external lead. A method for assembling a power semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53113481A JPS592176B2 (en) | 1978-09-12 | 1978-09-12 | Assembly method of power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53113481A JPS592176B2 (en) | 1978-09-12 | 1978-09-12 | Assembly method of power semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5539682A JPS5539682A (en) | 1980-03-19 |
| JPS592176B2 true JPS592176B2 (en) | 1984-01-17 |
Family
ID=14613367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53113481A Expired JPS592176B2 (en) | 1978-09-12 | 1978-09-12 | Assembly method of power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS592176B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577148A (en) * | 1980-06-16 | 1982-01-14 | Mitsubishi Electric Corp | Semiconductor module |
| US4615070A (en) * | 1984-08-27 | 1986-10-07 | Tennant Company | Sweeper with speed control for brush and vacuum fan |
| JPH088765Y2 (en) * | 1989-09-09 | 1996-03-13 | 株式会社ササキコーポレーション | Floor washer |
| JP2529843Y2 (en) * | 1990-09-26 | 1997-03-19 | アマノ株式会社 | Traveling cleaning truck |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4881769U (en) * | 1971-12-29 | 1973-10-05 |
-
1978
- 1978-09-12 JP JP53113481A patent/JPS592176B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5539682A (en) | 1980-03-19 |
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