JPS5928074B2 - Josefson Voltage Standard Device - Google Patents
Josefson Voltage Standard DeviceInfo
- Publication number
- JPS5928074B2 JPS5928074B2 JP55187597A JP18759780A JPS5928074B2 JP S5928074 B2 JPS5928074 B2 JP S5928074B2 JP 55187597 A JP55187597 A JP 55187597A JP 18759780 A JP18759780 A JP 18759780A JP S5928074 B2 JPS5928074 B2 JP S5928074B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- josephson
- current
- standard device
- constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
【発明の詳細な説明】
本発明は、ジョセフソン素子に個有の特性を利用して正
確な電圧値を得るようにしたジョセフソン電圧標準装置
に関し、特に、複数個のジョセフソン素子を環状に順次
に接続してなる超伝導閉回路を用いて高い電圧領域にお
ける精密電圧標準装置が得られるようにしたものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a Josephson voltage standard device that utilizes the unique characteristics of Josephson elements to obtain accurate voltage values. It is possible to obtain a precision voltage standard device in a high voltage region by using superconducting closed circuits connected in sequence.
この種ジョセフソン電圧標準装置としては、従来、第1
図Aに示すように1個のジョセフソン素子Jに、あるい
は、第1図Bに示すように順次に直列に接続した複数個
Nのジョセフソン素子J’に、直流電流Iと高周波電流
iとを同時に供給し、供給した高周波電流iの周波数f
に比例したつぎのような11係式によつて表わされる一
定直流電圧Vが得られるようにしていた。As this type of Josephson voltage standard device, the first
A direct current I and a high frequency current i are connected to one Josephson element J as shown in Figure A, or to a plurality of N Josephson elements J' sequentially connected in series as shown in Figure 1B. are simultaneously supplied, and the frequency f of the supplied high-frequency current i
A constant DC voltage V expressed by the following 11th equation proportional to .
すなわら、Φ0
V=n・−・ f(1)
2π
ここに、nは正の整数、Φ0は磁束量子=2.07×1
0−15Wbをそれぞれ表わす。That is, Φ0 V=n・-・f(1) 2π Here, n is a positive integer, and Φ0 is the magnetic flux quantum = 2.07×1
Each represents 0-15Wb.
しかして、上述のように供給した高周波電流の周波数に
比例した一定直流電圧りが得られる理由としては、ジョ
セフソン素子J、J’においては、直流電流Iの増加と
ともに各素子内ボ流の位相の回転が生じ、その回転数に
比例した直流電圧が誘起するが、直流電流工に重畳して
高周波電流iを供給すると、その高周波電流の周波数に
素子内電流の位相の回転が同期する現象が生じ、したが
つて、供給した高周波電流の周波数に比例した一定直流
電圧が発生することになる。However, the reason why a constant DC voltage proportional to the frequency of the supplied high-frequency current is obtained as described above is that in Josephson elements J and J', as the DC current I increases, the phase of the current in each element increases. rotation occurs, and a DC voltage proportional to the rotation speed is induced. However, when a high-frequency current i is supplied superimposed on the DC current, a phenomenon occurs in which the rotation of the phase of the current in the element synchronizes with the frequency of the high-frequency current. Therefore, a constant DC voltage proportional to the frequency of the supplied high-frequency current will be generated.
超伝導金属層の間に薄い絶縁層を介在させた形態のジョ
セフソン素子が呈するかかる現象を利用して標準電圧値
が得られるようにしたジョセフソン電圧標準装置は、供
給した高周波電流の周波数fの安定度が10−”゛程度
まで得られるので、得られる直流電圧Vも同じく10−
12程度の安定度を得ることができ、したがつて、従来
から電圧の国家標準として用いられている。しかしなが
ら、従来のこの種ジョセフソン電圧標準装置においては
、上述した(1)式のi男係によつて得られる直流電圧
りは、供給した高周波電流の周波数fをf=1010Π
zとしても、n=1においては電圧値V=201tVと
極めて低い電圧となり、かかる電圧値VをIV程度の使
用し易い電圧値とするために、周波数fを極めて高くす
るか、あるいは、整数nを極めて大きくするかの二つの
方法が従来考えられていた。The Josephson voltage standard device is capable of obtaining a standard voltage value by utilizing this phenomenon exhibited by a Josephson element in which a thin insulating layer is interposed between superconducting metal layers. Since the stability of V can be obtained up to about 10-", the obtained DC voltage V is also about 10-"
It is possible to obtain a stability of about 12, and therefore it has been used as a national voltage standard. However, in the conventional Josephson voltage standard device of this type, the DC voltage obtained by the equation (1) described above is calculated using the frequency f of the supplied high-frequency current as f = 1010Π
z, when n = 1, the voltage value V = 201 tV, which is extremely low. In order to make the voltage value V an easy-to-use voltage value of about IV, the frequency f must be made extremely high, or the integer n Two methods have been considered in the past: how to make the value extremely large.
し力化、高周波数電流の周波数fを継続して安定に極め
て高い値に保持することは高周波技術的に困難であるの
で、従来、(1)式における整数nを大きく設定し得る
ようにする方法が種々検討されて来た。しかして、第1
図Aに示したように1個のジョセフソン素子を単独で用
いた場合には、一般に、電流Jと電圧Tとの関係は、周
知のようにつぎの(a)式によつて表わされる。Since it is difficult in terms of high frequency technology to continuously and stably maintain the frequency f of the high frequency current at an extremely high value, conventionally, the integer n in equation (1) has been set to a large value. Various methods have been studied. However, the first
When one Josephson element is used alone as shown in FIG. A, the relationship between current J and voltage T is generally expressed by the following equation (a), as is well known.
ここに、VOは高周波電流1によつて発生する高周波電
圧、%はπと一πとの間の定数、Jnはベツセル関数で
あり、ψ0,f,nは前述したとおりに、それぞれ磁束
量子、高周波電流1の周波数、正の釜数である。Here, VO is the high-frequency voltage generated by the high-frequency current 1, % is a constant between π and 1π, Jn is the Betzel function, and ψ0, f, n are the magnetic flux quantum, respectively, as described above. The frequency of high frequency current 1 is a positive pot number.
この(a)式において
のときには時間tに関する項が零となるので、電流』は
直流電流1となり、電圧グは一定直流電圧となり、(b
)式はV=Nl7−0 −FIと表わされ、(1)式が
得られる。In this equation (a), the term related to time t becomes zero, so current' becomes DC current 1, voltage g becomes constant DC voltage, and (b
) formula is expressed as V=Nl7-0 -FI, and formula (1) is obtained.
上述したところに基づき、第1図Aに示したジヨセフソ
ン素子Jに周波数10GHzの高周波電流1を供給した
ときに得られる電流』と電圧ぴとの関係を実測した結果
は第2図に示すようになつた。Based on the above, we actually measured the relationship between the voltage and the current obtained when a high-frequency current 1 with a frequency of 10 GHz was supplied to the Josephson element J shown in Figure 1A, and the results are shown in Figure 2. Ta.
すなわら、1個のジ]セフソン素子を単独で用いた場合
には、(1)式における整数nを順次に大きく設定した
ときに、第2図の電流電圧特性曲線に実線で示したよう
に、整数nが大きくなるに従つて所要の一定直流電圧値
Vが得られる電流値の範囲が狭くなり、電圧標準装置と
しての動作に余裕がなくなるという難点があつた。また
、第1図Bに示したようにN個のジヨセフソン素子を直
列に接続した場合には、N個のジヨセフソン素子を互い
に直列に接続したことにより、1個のジヨセフソン素子
によつて得られる電圧値のN倍の値を有する一定直流電
圧が得られるようにする方法が種々検討されて来たが、
その場合、互いに直列に順次に接続したN個のジヨセフ
ソン素子のすべてが同じ電圧値を発生させるという保証
は全く得られず、したがつて、(1)式における整数n
の値に任意性が生ずるので、電圧標準装置として使用す
るには難点があつた。In other words, when one di]Cefson element is used alone, when the integer n in equation (1) is set to larger values in sequence, the current-voltage characteristic curve in Fig. 2 shows the result as shown by the solid line. Another disadvantage is that as the integer n becomes larger, the range of current values in which a required constant DC voltage value V can be obtained becomes narrower, and there is no margin for operation as a voltage standard device. In addition, when N Josephson elements are connected in series as shown in Figure 1B, the voltage obtained by one Josephson element is obtained by connecting the N Josephson elements in series. Various methods have been studied to obtain a constant DC voltage having a value N times the value of
In that case, there is no guarantee that all N Josephson elements connected in series with each other will generate the same voltage value, and therefore the integer n in equation (1)
Since the value of is arbitrary, it is difficult to use it as a voltage standard device.
本発明の目的は、上述した従来の欠点乃至難点を除去し
、高い電圧値の出力直流電圧を得るにも、広い電流領域
に亘り、正確かつ安定に動作し得るようにしたジヨセフ
ソン電圧標準装置を提供することにある。The object of the present invention is to eliminate the above-mentioned conventional drawbacks and difficulties, and to provide a Josephson voltage standard device that can operate accurately and stably over a wide current range even when obtaining a high output DC voltage. It is about providing.
すなわち、本発明ジヨセフソン電圧標準装置は、少なく
とも3個のジヨセフソン素子を環状に順次に接続してな
る超伝導性閉回路を有し、その超伝導性閉回路内の1個
の前記ジヨセフソン素子に直接に直流電流および高周波
電流を供給することにより、前記1個のジヨセフソン素
子の両端に供給した前記高周波電流の周波数に比例した
値を有する直流電圧を発生させるようにしたことを特徴
とするものである。That is, the Josephson voltage standard device of the present invention has a superconducting closed circuit formed by sequentially connecting at least three Josephson elements in a ring, and the voltage standard device of the present invention has a superconducting closed circuit formed by sequentially connecting at least three Josephson elements in a ring. By supplying a direct current and a high frequency current to the one Josephson element, a direct current voltage having a value proportional to the frequency of the high frequency current supplied to both ends of the one Josephson element is generated. .
以下に図面を参照して本発明を詳細に説明する。The present invention will be explained in detail below with reference to the drawings.
まず、本発明ジヨセフソン電圧標準装置の動作原理につ
いて説明するに、第3図に示すように、1個のジヨセフ
ソン素子J1とN個のジヨセフソン素子J2とを互いに
並列に接続してなる超伝導閉回路において、それら1個
およびN個のジヨセフソン素子J1およびNXJ2の並
列接続点に直流電流と高周波電流1とを同時に供給した
場合には、ジヨセフソン素子J1およびJ2に流れる電
流の位相をそれぞれY1およびY2とすると、閉回路中
を電流が一周するとその位相はもとに戻らなければなら
ないという一般的性質に従つて、次式の関係が成立する
。すなわち、図示の超伝導閉回路における各ジヨセフソ
ン素子に流れる電流の位相は自由に回転することなく、
(2)式の条件に束縛された状態のもとに回転するので
あるから、かかる位相ロツク状態において各ジヨセフソ
ン素子J1およびJ2にそれぞれ発生する直流電圧も相
互間に一定の関係を有する状態で発生することになり、
したがつて、順次に直列に接続したN個のジヨセフソン
素子J2においても、第1図Bに示したようなN個のジ
ヨセフソン素子の直列接続回路のみに直流電流および高
周波電流を同時に供給した従来の場合のように、各ジヨ
セフソン素子に発生する直流電圧を表わす(1)式中の
整数nが任意の値をとるがために、各直列素子に同じ電
圧を安定確実には発生させ得ない、という問題は、完全
に解消されることになる。First, to explain the operating principle of the Josephson voltage standard device of the present invention, as shown in FIG. 3, a superconducting closed circuit is formed by connecting one Josephson element J1 and N Josephson elements J2 in parallel. When DC current and high frequency current 1 are simultaneously supplied to the parallel connection point of one Josephson element J1 and NXJ2, the phase of the current flowing through Josephson elements J1 and J2 is changed to Y1 and Y2, respectively. Then, in accordance with the general property that the phase of a current must return to its original state after one circuit in a closed circuit, the following relationship holds true. In other words, the phase of the current flowing through each Josephson element in the superconducting closed circuit shown does not rotate freely;
Since it rotates under the conditions of equation (2), the DC voltages generated in each Josephson element J1 and J2 in this phase-locked state are also generated with a certain relationship between them. I decided to do it,
Therefore, even in the case of N Josephson elements J2 connected in series, the conventional method that simultaneously supplies direct current and high frequency current only to the series connection circuit of N Josephson elements as shown in FIG. As in the case of The problem will be completely resolved.
上述のように構成した本発明による超伝導閉回路におい
ては、上述した条件の位相束縛により、単一接続のジヨ
セフソン素子に供給する電流』とそのジヨセフソン素子
に発生する電圧vとの関係は、第1図Aに示した単独の
ジヨセフソン素子につき前述した(a)式とは異なり、
つぎの(c)式によつて表わされる。In the superconducting closed circuit according to the present invention configured as described above, due to the phase constraint under the above conditions, the relationship between the current supplied to the single-connected Josephson element and the voltage v generated in the Josephson element is expressed as follows. Unlike the formula (a) described above for the single Josephson element shown in Figure 1A,
It is expressed by the following equation (c).
この式(c)においても、前述した(a)式におけると
同様に、のときに、第1項における時間tに関する項が
零となつて、一定直流電圧V−n−・f1が得られると
ともに、のときにも、第2項における時間tに関する項
が零となつて、一定直流電圧=NNL二・f1が得られ
る。In this equation (c), as in the above-mentioned equation (a), when , the term related to time t in the second term becomes zero, and constant DC voltage=NNL2·f1 is obtained.
しかも(c)式の第2項におけるベツセル関数Jnの変
数(−ー一・?)は第1項におけるベツ1へ Mt
乙I&
1セル関数Jnの変数(一・′t/o)に比して一だ
けときに、同様に広い電流領域が得られることも確認し
た。Moreover, the variable (--1・?) of the Betzel function Jn in the second term of equation (c) changes to Betz 1 in the first term Mt
Otsu I&
It was also confirmed that a similarly wide current region can be obtained when the value is only 1 compared to the variable (1·'t/o) of the 1-cell function Jn.
一方、N個直列に接続したジヨセフソン素子J2に直流
電流1の供給によつて流れる電流の位相の回転に基づい
ては、かかる場合に適用する(1)式中の整数nをNN
としたときに、整数NN−NXNに対応して(1)式に
よつて決まる直流定電圧が得られる電流値の領域は、ジ
ヨセフソン素子J1について設定した上述の整数nに対
応した広い電流領域を有する直流定電圧が発生するよう
になる。On the other hand, based on the rotation of the phase of the current that flows when DC current 1 is supplied to N Josephson elements J2 connected in series, the integer n in equation (1) applied in such a case can be set to NN
Then, the range of current values in which a constant DC voltage determined by equation (1) can be obtained corresponding to the integer NN-NXN is a wide current range corresponding to the above-mentioned integer n set for Josephson element J1. A constant DC voltage will be generated.
すなわら、1個のジヨセフソン素子に流れる電流の位相
の回転が遅い範囲、したがつて、整数nが小さく、(1
)式によつて決まる直流定電圧Vが低い範囲においては
、その直流定電圧が得られる電流値の領域は広いが、ジ
ヨセフソン素子に流れる電流の位相回転が速い範囲、し
たがつて、整数nが大きく、(1)式によつて決まる直
流定電圧が高い範囲においては、その直流定電圧が得ら
れる電流値の領域が格段に狭くなること、第2図につき
前述したとおりである。一方、本発明による超伝導閉回
路においては、(2)式による位相束縛の条件のもとに
、N個直列接続のジヨセフソン素子J2に流れる電流の
位相回転は、上述したように、単一接続のジヨセフソン
素子J1に流れる電流の位相回転に比して、その1Aの
値まで遅くなり、したがつて、単一接続のジヨセフソン
素子J1に発生する直流定電圧を決める(1)式中の整
数がNXNに相当する大きい値になつて、そのジヨセフ
ソン素子J1に流れる電流の位相回転が極めて速い状態
になつたときにおいても、N個直列接続のジヨセフソン
素子J2に発生する直流定電圧を決める(1)式中の整
数値は、ジヨセフソン素子J1についての上述した整数
値NXNに対し、その1/Nの整数値nに対応した遅い
位相回転をする電流がそのジヨセフソン素子J2に流れ
るのであるから、そのジヨセフソン素子J2に発生する
直流定電圧は、整数値nに対応した広い電流領域をもつ
て発生することになる。In other words, the range in which the phase rotation of the current flowing through one Josephson element is slow, and therefore the integer n is small and (1
) In the range where the constant DC voltage V determined by the formula is low, the range of current values in which the constant DC voltage can be obtained is wide. As described above with reference to FIG. 2, in the range where the constant DC voltage determined by equation (1) is high, the range of current values in which the constant DC voltage can be obtained becomes significantly narrower. On the other hand, in the superconducting closed circuit according to the present invention, under the phase constraint condition according to equation (2), the phase rotation of the current flowing through the N Josephson elements J2 connected in series is expressed as Compared to the phase rotation of the current flowing through Josephson element J1 of Even when the phase rotation of the current flowing through Josephson element J1 reaches a large value corresponding to NXN and becomes extremely fast, determine the DC constant voltage generated in N series-connected Josephson elements J2 (1) The integer value in the equation is the integer value N The constant DC voltage generated in element J2 is generated in a wide current range corresponding to the integer value n.
また、ジヨセフソン素子J2に流れる電流の位相回転は
、ジヨセフソン素子J1に流れる電流の位相回転に比し
て、その1Aの格段に遅い値となるのであるから、順次
に直列に接続したN個のジヨセフソン素子J2中におけ
る個々のジヨセフソン素子J2に発生する直流定電圧値
は、単一接続のジヨセフソン素子J1に発生する直流定
電圧値の1/Nとはなるが、N個直列接続における全電
圧値は、単一接続のジヨセフソン素子J1に発生する電
圧値に等しくなる。したがつて、本発明による超伝導閉
回路において順次に直列に接続するジヨセフソン素子の
個数Nを増大させることにより、広い動作市流領域を有
する一定の直流高電圧を高い安定度をもつて容易に発生
させることができる。Furthermore, since the phase rotation of the current flowing through the Josephson element J2 is a much slower value of 1A than the phase rotation of the current flowing through the Josephson element J1, N pieces of Josephson elements connected in series are The DC constant voltage value generated in each Josephson element J2 in the element J2 is 1/N of the DC constant voltage value generated in the single connected Josephson element J1, but the total voltage value when N pieces are connected in series is , is equal to the voltage value generated in the single-connected Josephson element J1. Therefore, by increasing the number N of Josephson elements sequentially connected in series in the superconducting closed circuit according to the present invention, it is possible to easily generate a constant DC high voltage having a wide operating range with high stability. can be generated.
第3図に示した等価回路により上述したように動作する
超伝導閉回路からなる本発明ジヨセフソン電圧標準装置
の具体的な構成の例を第5図A,Bに示す。FIGS. 5A and 5B show an example of a specific configuration of the Josefson voltage standard device of the present invention, which comprises a superconducting closed circuit operating as described above using the equivalent circuit shown in FIG. 3.
図示の具体的構成は第3図に示した等価回路における各
ジヨセフソン素子Jl,J2を、いずれも、絶縁薄層を
介在させた超伝導薄膜S1およびS2により構成したも
のであり、同図Bに示すように、シリコン、ガラス等よ
りなる基板1上に例えばNb薄膜よりなる厚さ1μm程
度の超伝導グランドプレーン2を被着形成して、外部か
らの磁束や電磁波に対する遮蔽を構成し、その超伝導グ
ランドプレーン2の表面を厚さ200λ程度まで酸化し
て電気絶縁を施したうえで、その表面上に同図Aに示す
構成配置にして、例えば鉛Pb等よりなる超伝導薄膜(
S1)4を蒸着し、さらに、その超伝導薄膜(S1)4
の表面を厚さ20人程度に薄く酸化してジヨセフソン接
合構成用の絶縁薄層5を形成し、その絶縁薄層5の上に
同じく鉛Pb等よりなる超伝導薄膜(S2)6を蒸着し
て、第3図示の等価回路における各ジヨセフソン素子J
,,J2を構成する。し力化て、上側の超伝導薄膜(S
2)6は、同図Aに示した上面図から明らかなように、
各ジヨセフソン素子Jl,J2を順次に環状に接続して
超伝導閉回路を構成するように、相隣る2個の下側超伝
導薄膜(S1)4の酸化表面5およびそれら2個の下側
超伝導薄膜(S1)4の中間に露出した超伝導グランド
プレーン2の酸化表面3に沿つて連続した蒸着膜の形態
に被着形成する。しかして、各ジヨセフソン素子Jl,
J2を、例えば一辺60ttmの正方形状に構成するに
は、2素子を構成する下側超伝導薄膜(S1)4を例え
ば幅100μm、長さ120μm以上の長方形状に被着
形成するとともに、2素子を構成する上側超伝導薄膜(
S2)6を例えば幅60μm1長さ120μm以上の長
方形状に被着形成することになる。同図Aに示した構成
例においては、上述のようにして16個のジヨセフソン
素子を順次に環状に接続して超伝導閉回路を構成し、単
一接続のジヨセフソン素子J1を構成する下側超伝導薄
膜S1−0をそれぞれ図示のように延在拡張させて端極
板をそれぞれ構成し、それらの端極板に電圧端子Va,
Vbを設けて直流定電圧を取出すようにするとともに、
それらの端極板間に直流電流1を供給し、かつ、例えば
同軸給電線CCを接続して例えば20GHzの高周波電
流1を供給することにより、所期の一定値を有する直流
定電圧を安定かつ容易に発生させることができる。以上
の説明から明らかなように、本発明によれば、多数個の
ジヨセフソン素子を環状に接続して構成した超伝導閉回
路により、広い動作電流領域を有する安定な直流高電圧
を容易に発生させて、実用するに好適な高い電圧値が得
られるジヨセフソン電圧標準装置を容易に実現すること
ができる。The specific configuration shown is that each Josephson element Jl, J2 in the equivalent circuit shown in FIG. 3 is constructed of superconducting thin films S1 and S2 with an insulating thin layer interposed therebetween. As shown, a superconducting ground plane 2 made of, for example, a Nb thin film and having a thickness of about 1 μm is formed on a substrate 1 made of silicon, glass, etc. to form a shield against external magnetic flux and electromagnetic waves, and After electrically insulating the surface of the conductive ground plane 2 by oxidizing it to a thickness of approximately 200λ, a superconducting thin film made of, for example, lead Pb (
S1) 4 is deposited, and the superconducting thin film (S1) 4 is further deposited.
A thin insulating layer 5 for forming a Josephson junction is formed by oxidizing the surface of the superconductor to a thickness of about 20 mm, and a superconducting thin film (S2) 6 made of lead, Pb, etc. is deposited on top of the insulating thin layer 5. Therefore, each Josephson element J in the equivalent circuit shown in FIG.
, , J2 is configured. The upper superconducting thin film (S
2) As is clear from the top view shown in Figure A, 6 is
The oxidized surfaces 5 of two adjacent lower superconducting thin films (S1) 4 and the lower surfaces of those two A continuous vapor deposition film is formed along the oxidized surface 3 of the superconducting ground plane 2 exposed in the middle of the superconducting thin film (S1) 4. Therefore, each Josephson element Jl,
In order to configure J2 in a square shape with a side of 60 ttm, for example, the lower superconducting thin film (S1) 4 constituting the two elements is formed into a rectangular shape with a width of 100 μm or more and a length of 120 μm or more, and the two elements are The upper superconducting thin film (
S2) 6 is formed into a rectangular shape having a width of 60 μm and a length of 120 μm or more, for example. In the configuration example shown in FIG. The conductive thin films S1-0 are each extended and expanded as shown in the figure to constitute end plates, and voltage terminals Va, Va,
In addition to providing Vb to extract a constant DC voltage,
By supplying a DC current 1 between those end plates and, for example, connecting a coaxial feeder line CC to supply a high frequency current 1 of, for example, 20 GHz, a constant DC voltage having a desired constant value can be stably and can be easily generated. As is clear from the above description, according to the present invention, a stable high DC voltage having a wide operating current range can be easily generated using a superconducting closed circuit formed by connecting a large number of Josephson elements in a ring. As a result, a Josephson voltage standard device capable of obtaining a high voltage value suitable for practical use can be easily realized.
第1図A,Bは従来のジヨセフソン電圧標準装置の構成
をそれぞれ模式的に示す等価回路図、第2図は同じくそ
の動作の態様を示す特性曲線図、第3図は本発明ジヨセ
フソン電圧標準装置の動作原理を示す等価回路図、第4
図は同じくその動作の態様の例を示す特性曲線図、第5
図AおよびBは同じくその具体的構成の例をそれぞれ示
す平面図および縦断面図である。
1・・・・・・基板、2・・・・・・超伝導グランドプ
レーン、3,5・・・・・・酸化絶縁膜、4,6・・・
・・・超伝導薄膜、J,J′,Jl,J2・・・・・・
ジヨセフソン素子、・・・・・・直流電圧計、Sl,S
2,Sl−0,S2−0・・・・・・超伝導薄膜、Va
,Vb・・・・・・電圧端子、CC・・・・・・同軸給
電線。1A and 1B are equivalent circuit diagrams schematically showing the configuration of the conventional Josephson voltage standard device, FIG. 2 is a characteristic curve diagram showing the mode of operation thereof, and FIG. 3 is the Josephson voltage standard device of the present invention. Equivalent circuit diagram showing the operating principle of
The figure is also a characteristic curve diagram showing an example of the mode of operation.
Figures A and B are a plan view and a longitudinal cross-sectional view, respectively, showing an example of the specific configuration. 1... Substrate, 2... Superconducting ground plane, 3, 5... Oxide insulating film, 4, 6...
...Superconducting thin film, J, J', Jl, J2...
Josefson element...DC voltmeter, Sl, S
2, Sl-0, S2-0...Superconducting thin film, Va
, Vb... Voltage terminal, CC... Coaxial feed line.
Claims (1)
接続してなる超伝導性閉回路を有し、その超伝導性閉回
路内の1個の前記ジョセフソン素子に直接に直流電流お
よび高周波電流を供給することにより、前記1個のジョ
セフソン素子の両端に供給した前記高周波電流の周波数
に比例した値を有する直流電圧を発生させるようにした
ことを特徴とするジョセフソン電圧標準装置。1 A superconducting closed circuit formed by sequentially connecting at least three Josephson elements in a ring, and direct current and high-frequency current being applied directly to one Josephson element in the superconducting closed circuit. A Josephson voltage standard device, characterized in that, by supplying the voltage to both ends of the Josephson element, a DC voltage having a value proportional to the frequency of the high-frequency current supplied to both ends of the Josephson element is generated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55187597A JPS5928074B2 (en) | 1980-12-29 | 1980-12-29 | Josefson Voltage Standard Device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55187597A JPS5928074B2 (en) | 1980-12-29 | 1980-12-29 | Josefson Voltage Standard Device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57112087A JPS57112087A (en) | 1982-07-12 |
| JPS5928074B2 true JPS5928074B2 (en) | 1984-07-10 |
Family
ID=16208888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55187597A Expired JPS5928074B2 (en) | 1980-12-29 | 1980-12-29 | Josefson Voltage Standard Device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5928074B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5928669A (en) * | 1982-08-11 | 1984-02-15 | Tsutomu Yamashita | Josephson voltage standard device |
| JP4595069B2 (en) * | 2005-06-09 | 2010-12-08 | 独立行政法人産業技術総合研究所 | Quasi-planar waveguide type Josephson junction array structure, digital-analog converter using the same, programmable array for Josephson voltage standard, chip for Josephson voltage standard, Josephson voltage generator |
-
1980
- 1980-12-29 JP JP55187597A patent/JPS5928074B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57112087A (en) | 1982-07-12 |
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