JPS5936234B2 - electronic clock - Google Patents
electronic clockInfo
- Publication number
- JPS5936234B2 JPS5936234B2 JP50081575A JP8157575A JPS5936234B2 JP S5936234 B2 JPS5936234 B2 JP S5936234B2 JP 50081575 A JP50081575 A JP 50081575A JP 8157575 A JP8157575 A JP 8157575A JP S5936234 B2 JPS5936234 B2 JP S5936234B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- electronic timepiece
- mos transistor
- operated
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04G—ELECTRONIC TIME-PIECES
- G04G99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromechanical Clocks (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明は水晶振動子等を時間基準源とし、該振動子の周
波数を時刻表示装置まで分周する手段を有するコンプリ
メンタリーMOSトランジスタ(以下CMOSTと略記
する)の論理回路を用いた水晶発振式電子時計に関する
もので、電源を、電池より、P−Well拡散と同時に
作つた抵抗を直列に介して供給し、電池電圧より低い電
圧で、電子回路即ちCMOS集積回路(以下CMOS、
ICと略す)を動作させ、消費電力を減少させることに
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a complementary MOS transistor (hereinafter abbreviated as CMOST) logic circuit which uses a crystal oscillator or the like as a time reference source and has means for dividing the frequency of the oscillator up to a time display device. This relates to a crystal oscillation type electronic clock that uses an electronic circuit, that is, a CMOS integrated circuit (hereinafter referred to as CMOS integrated circuit), in which power is supplied from a battery through a resistor made at the same time as the P-well diffusion in series, and at a voltage lower than the battery voltage. CMOS,
(abbreviated as IC) and reduce power consumption.
従来より用いられている一般的な水晶発振式電子時計の
構成は、第1図に示す如く発振部1、分周部2、表示駆
動部3および時刻表示装置4よりなり、電源は電池10
より供給され、すべての電子回路部に一様な電池電圧力
功口えられている。The structure of a conventionally used general crystal oscillation type electronic timepiece consists of an oscillating section 1, a frequency dividing section 2, a display driving section 3, and a time display device 4, as shown in FIG. 1, and the power source is a battery 10.
All electronic circuits are supplied with uniform battery voltage power.
電子時計は、開発初期においては、アルミゲートCMO
S、ICを用いていたため、電池電圧1.5Vで動作さ
せている。しかし近年シリコンゲートCMOS、ICの
開発によつて、しきい値電圧は低くなり、比較的低い5
0KH2程度の周波数では、電池電圧0.5〜1.0V
で動作が十分可能である。したがつて、本発明は時刻表
示装置のパルスモーター等をドライブする表示駆動部の
ような電力を必要とする部分以外の電子回路には、Nチ
ャネルMOSTの領域となる薄いP型不純物領域いわゆ
るP−Wellと同時拡散してできた抵抗を直列に介し
て、電流を制限し電池電圧を低下させ、消費電力を減少
させたものである。In the early stages of development, electronic watches were manufactured by Aluminum Gate CMO.
Since S, IC was used, it was operated with a battery voltage of 1.5V. However, in recent years, with the development of silicon gate CMOS and IC, the threshold voltage has been lowered and is relatively low.
At a frequency of about 0KH2, the battery voltage is 0.5 to 1.0V.
operation is possible. Therefore, in the present invention, a thin P-type impurity region, so-called P - A resistor made by co-diffusion with the Well is connected in series to limit the current, lower the battery voltage, and reduce power consumption.
本発明の一実施例の構成を第2図に示した。The configuration of one embodiment of the present invention is shown in FIG.
本発明の例では電池の低電位側に抵抗101を直列に介
して、発振部1、分周部2に、抵抗101による電圧ぶ
んだけ降下した電圧を加え、表示駆動部3には、直接電
池電圧を加えている。本発明のもうひとつの特徴とする
ところは、抵抗として、NチャネルMOSTの領域とな
る薄いP型不純物領域いわゆるP−Wellと同時拡散
してできたP型の拡散抵抗を用いるところにある。In the example of the present invention, a voltage dropped by the voltage of the resistor 101 is applied to the oscillation section 1 and the frequency dividing section 2 via the resistor 101 in series on the low potential side of the battery, and the display drive section 3 is directly connected to the battery. Applying voltage. Another feature of the present invention is that a P-type diffused resistor is used as the resistor, which is formed by co-diffusion with a thin P-type impurity region, so-called P-Well, which becomes the N-channel MOST region.
周知のごとく、電子時計用CMOS、ICのしきい値電
圧は、約O、5V−O、8Vになるよう設計されている
。このときのP−Wellの表面不純物濃度は1×10
16/cBtとなつて、シート抵抗は5〜6KΩ/口と
なる。このP−Wellの不純物拡散と同時工程で実際
に製作した、拡散抵抗Rとしきい値電圧Vthとの関係
を第3図のグラフに示した。抵抗のマスクパターンの寸
法は20μ×200μそして拡散深さは10μの場合で
ある。第3図のグラフからもわかるようにしきい値電圧
が大きくなると抵抗Rの値は小となり、しきい値電圧が
小さくなると、抵抗Rの値は大となる。この結果は、変
化のない抵抗を接続した場合に比較して、非常に良い。
なぜならNチヤネルMOSTのしきい値電圧が小さいと
き即増幅度が大きいときは、大きな抵抗値で電圧降下を
大にして、MOSTに流れる電流を制限し、しきい値電
圧が大きいとき即ち増幅度が小さいときは、小さな抵抗
値となつて、電圧降下を小にして、MOSTへの電流を
さほど制限しないからである。このように、それらは、
おたがいに補いあつて、低消費電力でも十分CMOS.
ICが動作するように構成されている。以上説明したよ
うに、P−Well不純物領域と同時に製作した拡散抵
抗を、電池と直列に介して、電子回路に加えることによ
つて、しきい値電圧がばらついても、安定にその消費電
力を30〜40%軽減することができ、その効果は非常
に大きい。As is well known, the threshold voltages of CMOS and IC for electronic watches are designed to be approximately 0.5V-O.8V. The surface impurity concentration of P-Well at this time is 1×10
16/cBt, and the sheet resistance is 5 to 6 KΩ/mouth. The graph of FIG. 3 shows the relationship between the diffusion resistance R and the threshold voltage Vth, which was actually manufactured in the same process as the impurity diffusion of this P-Well. The dimensions of the resistor mask pattern are 20μ×200μ and the diffusion depth is 10μ. As can be seen from the graph of FIG. 3, as the threshold voltage increases, the value of the resistor R decreases, and as the threshold voltage decreases, the value of the resistor R increases. This result is much better than when a resistor with no change is connected.
This is because when the threshold voltage of an N-channel MOST is small and the amplification degree is large, a large resistance value increases the voltage drop to limit the current flowing through the MOST. This is because when it is small, the resistance value is small, the voltage drop is small, and the current to the MOST is not so restricted. In this way, they
By complementing each other, CMOS can be used even with low power consumption.
The IC is configured to operate. As explained above, by adding the diffused resistor fabricated at the same time as the P-Well impurity region to the electronic circuit through the battery in series, the power consumption can be stably reduced even if the threshold voltage varies. It can be reduced by 30 to 40%, and the effect is very large.
なお電圧振幅が異なり、電圧小から電圧大への電子回路
部の接続には、必要ならばレベル調整回路がつけられる
のは当然のことである。It should be noted that the voltage amplitudes are different, and it is a matter of course that a level adjustment circuit is attached to the connection of the electronic circuit section from a low voltage to a high voltage, if necessary.
第1図は従来の水晶発振式電子時計のプロツクダイアグ
ラム、第2図はP−Wellと同時工程で製作した拡散
抵抗とNチヤネルMOSトランジスタのしきい値電圧の
関係を実測したグラフ、第3図は本発明の水晶発振式電
子時計のプロツクダイアグラムである。
1 ・・・・・・発振部、2・・・・・・分周部、3・
・・・・・表示駆動部、4・・・・・・時刻表示装置、
101・・・・・・ P − Wellと同時工程で製
作した拡散抵抗。Figure 1 is a process diagram of a conventional crystal oscillation electronic watch, Figure 2 is a graph showing the relationship between the threshold voltage of an N-channel MOS transistor and the diffused resistor fabricated in the same process as the P-well. The figure is a block diagram of a crystal oscillation type electronic timepiece according to the present invention. 1... Oscillation section, 2... Frequency division section, 3.
...Display drive unit, 4...Time display device,
101... Diffused resistor manufactured in the same process as P-Well.
Claims (1)
を時刻表示装置まで分周する手段を有するコンプリメン
タリーMOSトランジスタの論理回路を用いた水晶発振
式電子時計において、N型基板を用いたコンプリメンタ
リーMOSトランジスタでのNチャネルMOSトランジ
スタの領域となる薄いP型不純物領域いわゆるP−We
llと同時拡散してできた抵抗を直列に介して電源電圧
を供給し、電池電圧より低い電圧で、コンプリメンタリ
ーMOS集積回路等の電子回路を動作させることを特徴
とする電子時計。 2 特許請求の範囲1において、表示駆動部は電池電圧
そのままで動作させることを特徴とする電子時計。 3 特許請求の範囲1において、表示駆動部および分周
部の一部は、電池電圧そのままで動作させることを特徴
とする電子時計。[Claims] 1. A crystal oscillation electronic timepiece using a complementary MOS transistor logic circuit that uses a crystal oscillator or the like as a time reference source and has means for dividing the frequency of the oscillator to a time display device, Thin P-type impurity region, so-called P-We, which becomes the N-channel MOS transistor region in a complementary MOS transistor using an N-type substrate
An electronic timepiece characterized in that a power supply voltage is supplied through a resistor formed by co-diffusion with ll in series, and an electronic circuit such as a complementary MOS integrated circuit is operated at a voltage lower than a battery voltage. 2. The electronic timepiece according to claim 1, characterized in that the display drive section is operated using battery voltage as is. 3. The electronic timepiece according to claim 1, characterized in that a part of the display driving section and the frequency dividing section are operated using battery voltage as is.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50081575A JPS5936234B2 (en) | 1975-07-02 | 1975-07-02 | electronic clock |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50081575A JPS5936234B2 (en) | 1975-07-02 | 1975-07-02 | electronic clock |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS525567A JPS525567A (en) | 1977-01-17 |
| JPS5936234B2 true JPS5936234B2 (en) | 1984-09-03 |
Family
ID=13750093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50081575A Expired JPS5936234B2 (en) | 1975-07-02 | 1975-07-02 | electronic clock |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5936234B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5363057A (en) * | 1976-11-18 | 1978-06-06 | Seiko Epson Corp | Electronic wristwatch |
| JPS5826176Y2 (en) * | 1979-08-13 | 1983-06-06 | 共和産業株式会社 | Structure of bearing support part of automobile sun visor |
| JP2733360B2 (en) * | 1990-02-22 | 1998-03-30 | 松下電工株式会社 | Wood material coating method |
-
1975
- 1975-07-02 JP JP50081575A patent/JPS5936234B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS525567A (en) | 1977-01-17 |
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