JPS5936364B2 - Ceramic composition for electronic parts - Google Patents
Ceramic composition for electronic partsInfo
- Publication number
- JPS5936364B2 JPS5936364B2 JP52003381A JP338177A JPS5936364B2 JP S5936364 B2 JPS5936364 B2 JP S5936364B2 JP 52003381 A JP52003381 A JP 52003381A JP 338177 A JP338177 A JP 338177A JP S5936364 B2 JPS5936364 B2 JP S5936364B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- component
- ceramic composition
- electronic parts
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 title description 18
- 239000000203 mixture Substances 0.000 title description 12
- 229910002706 AlOOH Inorganic materials 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 229910052593 corundum Inorganic materials 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 241000975357 Salangichthys microdon Species 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- -1 steatite Chemical compound 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明は電子部品用セラミック組成物に関するものであ
り、特に絶縁材料として必要とされる性質をもち、かつ
耐熱性に優れたセラミックスを構成することのできる組
成物を提供しようとするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ceramic composition for electronic components, and particularly provides a composition that can constitute a ceramic having properties required as an insulating material and having excellent heat resistance. This is what I am trying to do.
集積回路などの支持基体や封止用部材に、セラミックス
が広く使用されている。Ceramics are widely used for supporting substrates and sealing members for integrated circuits and the like.
これらには耐熱性を必要とされることが多い。周知のよ
うに、耐熱性セラミック材料として、BeOやAl2O
3、フォルステライト、ステアタイト、ムライトなどが
ある。These often require heat resistance. As is well known, BeO and Al2O are used as heat-resistant ceramic materials.
3. There are forsterite, steatite, mullite, etc.
ところが、BeOは毒性があるため、その用途がきわめ
て限られている。他の材料についても一長一短があり、
特に耐熱性があまりよくないという欠点があつた。本発
明はこのような欠点を除去したセラミック組成物を提供
するものであり、さらに絶縁抵抗や高周波領域での誘電
体損失についても優れているセラミックスを実現するこ
とができるものである。本発明にかかるセラミック組成
物は、シラス成分1.5〜12重量%、Al2O3成分
もしくはAIOOH成分75〜94重量%、MIO成分
0.8〜3重量%、TiO2成分2.7〜7重量弊、お
よび陶石成分1〜3重量%からなることを特徴とする。
無論、セラミックスの特性をさらに改善するために、他
の成分を追加導入してもよい。これは、その主たる成分
のひとつとして、シラスを使用している。シラスは、周
知のように、南九州を中心にして広く分布する酸化火山
噴出物の1種で、灰白色の堆積物である。その推定理蔵
量は約6×1010トンであり、資源としてきわめて豊
富であり、また安価なものである。一般に、シラス成分
はほぼSiO2が7.5重量%、Al2O3成分が14
重量%、Na2Oが3重量%、に2Oが2重量%、水分
3.5重量%、CaOが1.5重量%、およびFe2O
3が1重量%とされている。これまで、シラスは中空微
小球体(バルーン)や研摩材、タイル用陶器などに応用
されてきている。発明者らは、シラスを電子部品用セラ
ミツク材料として使用することについて、研究を進めて
来た結果、上述の無機化合物と金属酸化物と混合し、焼
成すると、耐熱性にいちぢるしく優れ、絶縁性と誘電体
損失の良好なセラミツクスが得られることを見出した。
そして、従来のアルミナ磁器に比べて、焼結温度が低く
、セラミツクスを量差する上で非常に有利なものである
。ところで、本発明のセラミツク組成物における成分の
組成比率を、上述のように特定した理由は、次のとおり
である。However, since BeO is toxic, its uses are extremely limited. Other materials also have advantages and disadvantages.
In particular, it had a drawback of not having very good heat resistance. The present invention provides a ceramic composition that eliminates these drawbacks, and also makes it possible to realize ceramics that are excellent in insulation resistance and dielectric loss in a high frequency range. The ceramic composition according to the present invention has a shirasu component of 1.5 to 12% by weight, an Al2O3 component or AIOOH component of 75 to 94% by weight, a MIO component of 0.8 to 3% by weight, a TiO2 component of 2.7 to 7% by weight, and a chinastone component of 1 to 3% by weight.
Of course, other components may be additionally introduced to further improve the properties of the ceramic. This uses whitebait as one of its main ingredients. As is well known, shirasu is a type of oxidized volcanic ejecta widely distributed around southern Kyushu, and is a grayish-white deposit. Its estimated physical stock is approximately 6 x 1010 tons, making it an extremely abundant and inexpensive resource. Generally, the Shirasu component contains approximately 7.5% by weight of SiO2 and 14% by weight of Al2O3 component.
% by weight, 3% by weight of Na2O, 2% by weight of 2O, 3.5% by weight of water, 1.5% by weight of CaO, and 2% by weight of Fe2O.
3 is considered to be 1% by weight. Until now, Shirasu has been used in hollow microspheres (balloons), abrasive materials, ceramic tiles, etc. The inventors have been conducting research on the use of shirasu as a ceramic material for electronic components. As a result, when mixed with the above-mentioned inorganic compounds and metal oxides and fired, it has extremely excellent heat resistance. It was discovered that ceramics with good insulation properties and dielectric loss can be obtained.
Furthermore, compared to conventional alumina porcelain, the sintering temperature is lower, making it extremely advantageous for weighing ceramics. By the way, the reason why the composition ratio of the components in the ceramic composition of the present invention is specified as described above is as follows.
シラス成分が1.5重量弊より少ないと、焼成温度が1
500℃以上になり、セラミツクスの量産化に適したも
のとは言えなくなる。If the whitebait component is less than 1.5% by weight, the firing temperature will be 1.
The temperature exceeds 500°C, making it unsuitable for mass production of ceramics.
これが12重量%より多くなると、焼成温度は低くても
よいが、焼成によつてガラス化しやすくなり、熱伝導性
がよく、緻密なセラミツクスを得ることが困難になる。
Al2O3成分が75重量%より少なくなると、高周波
領域での誘電体損失が増大し、機械的強度も低下するた
め、好ましくない。If this amount exceeds 12% by weight, the firing temperature may be low, but the firing tends to cause vitrification, making it difficult to obtain dense ceramics with good thermal conductivity.
If the Al2O3 component is less than 75% by weight, dielectric loss in the high frequency range increases and mechanical strength also decreases, which is not preferable.
また、それが94重量%より多くなると、焼成温度が1
400℃以上になつて焼結が困難になるばかりでなく、
誘電特性をはじめとする諸特性が低下してしまう。M9
O成分が0.8重量%より少ないと、高周波領域での誘
電体損失が低下するばかりでなく、耐熱特性も悪くなる
。それが3.0重量%より多くなると、緻密なセラミツ
クスが得られなくなり、吸水性が大きくなる。TiO2
成分が2.7重量%より少なくなると、誘電体損失が大
きくなり、また7重量%より多くなると、耐熱特性が劣
化する。Moreover, when it exceeds 94% by weight, the firing temperature is increased to 1.
Not only does sintering become difficult when the temperature exceeds 400℃,
Various properties including dielectric properties deteriorate. M9
When the O component is less than 0.8% by weight, not only the dielectric loss in the high frequency region decreases, but also the heat resistance characteristics deteriorate. When it exceeds 3.0% by weight, dense ceramics cannot be obtained and water absorption increases. TiO2
When the content of the component is less than 2.7% by weight, dielectric loss increases, and when the content is more than 7% by weight, the heat resistance properties deteriorate.
陶石成分が1重量%より少ないと、焼結温度を低下させ
る効果が乏しくなり、また3重量弊より多いと、誘電体
損失が増大するばかりでなく、耐熱特性も劣化する。If the chinastone component is less than 1% by weight, the effect of lowering the sintering temperature will be poor, and if it is more than 3% by weight, not only will the dielectric loss increase, but the heat resistance properties will also deteriorate.
以下、その実施例をあげて、具体的に説明する。Hereinafter, it will be specifically explained by giving examples.
まず、粒径1〜3μ前後のシラス粉末と、Al2O3も
しくはAIOOH,TiO2,MfIO,陶石の粉末を
準備し、第1表に示す組成比率になるよう調合した。First, whitebait powder with a particle size of about 1 to 3 μm, and powders of Al2O3 or AIOOH, TiO2, MfIO, and chinastone were prepared and mixed to have the composition ratios shown in Table 1.
上記各配合物を、それぞれウレタン内張りポツトミルを
用いて、湿式混合し、水分を蒸発させてから、長さ40
n)巾20n)厚さ3mmの角板状に成型した。Each of the above formulations was wet-mixed using a urethane-lined pot mill, the water was evaporated, and a length of 40 mm was mixed.
It was molded into a rectangular plate shape with a width of 20n) and a thickness of 3mm.
成型のための圧力は、約700〜1000kg/Cdと
した。各成型体をSiC発熱体をそなえた電気炉に入れ
、昇温速度150℃/時間で1300〜1400℃の範
囲内の温度まで高め、2時間保持して、焼成した。なお
、試料17については、焼成温度をそれより20〜30
℃低い温度とした。得られたセラミツクスに、一般に行
なわれている方法で、それぞれ銀電極を焼付けた。この
ようにして作つた試料それぞれについて、諸特性を調べ
、その結果を第2表に示す。The pressure for molding was approximately 700 to 1000 kg/Cd. Each molded body was placed in an electric furnace equipped with a SiC heating element, raised to a temperature within the range of 1300 to 1400°C at a heating rate of 150°C/hour, and held for 2 hours to be fired. For sample 17, the firing temperature was 20 to 30 degrees higher than that.
℃ lower temperature. Silver electrodes were baked onto each of the obtained ceramics using a commonly used method. Various characteristics of each of the samples thus prepared were investigated, and the results are shown in Table 2.
誘電特性を調べ、その結果を第2表に示す。誘電特性と
して、1MHzで誘電率(ε)、誘電体損失(Tanδ
)を測定した。絶縁抵抗値については、500℃で直流
500Vを印加して測定した。耐熱衝撃性については、
500℃の溶融はんだに浸漬し、それから取出して厚さ
3nのアルミニウム板上に高さ40crnより落下させ
、各10個あたりの破損数で評価した。表中、たとえぱ
3/IOとは、10個のうち3個破損したことを表わし
ている。上表から明らかなように、本発明にかかる組成
物によれば、得られたセラミツクスの耐熱衝撃性はきわ
めてよく、500℃の溶融はんだに浸漬して急熱してか
ら、室温に保たれたアルミニウム板上に落下させても、
なんら破損を生じなかつた。The dielectric properties were investigated and the results are shown in Table 2. The dielectric properties include the dielectric constant (ε) and dielectric loss (Tanδ) at 1MHz.
) was measured. The insulation resistance value was measured by applying 500 V DC at 500°C. Regarding thermal shock resistance,
They were immersed in molten solder at 500°C, then taken out and dropped from a height of 40 crn onto an aluminum plate with a thickness of 3 nm, and evaluated by the number of breakages per 10 pieces. In the table, 3/IO means that 3 out of 10 were damaged. As is clear from the above table, according to the composition according to the present invention, the thermal shock resistance of the obtained ceramics is extremely good. Even if you drop it on the board,
No damage occurred.
ところが、本発明の範囲外の組成物によれば、耐熱衝撃
性があまりよくない。さらに、本発明の組成物によれば
、1MHzでの誘電特性がεで7.0〜 8.4,ta
nδで0.7〜 5.0であり、曲げ強度が1750〜
2420kg/Cd)絶縁抵抗値が4.7×109〜
7.0×101/Ω一儂である。これからも、電子部
品用セラミツクスとして優れた電気的特性を保有するも
のであることがわかる。また、試料17のように、アル
ミナ成分としてAIOOHを用いると、諸特性が良好で
ある上に、焼結温度をAl2O3を使用したときよりも
さらに20〜30℃低下させることができ、量産する上
でAIOOHを使用することは非常に有効である。However, compositions outside the scope of the present invention have poor thermal shock resistance. Further, according to the composition of the present invention, the dielectric property at 1 MHz is 7.0 to 8.4, ta
nδ is 0.7 to 5.0, and bending strength is 1750 to 5.0.
2420kg/Cd) Insulation resistance value is 4.7 x 109 ~
It is 7.0×101/Ω. It can be seen from this that it has excellent electrical properties as a ceramic for electronic components. In addition, when AIOOH is used as the alumina component as in sample 17, not only the various properties are good, but the sintering temperature can be further lowered by 20 to 30 degrees Celsius than when Al2O3 is used, which makes it easier for mass production. It is very effective to use AIOOH in
Claims (1)
分もしくはAlOOH成分75〜94重量%、MgO成
分0.8〜3重量%、TiO_2成分2.7〜7重量%
、および陶石成分1〜3重量%からなることを特徴とす
る電子部品用セラミック組成物。1 Shirasu component 1.5-12% by weight, Al_2O_3 component or AlOOH component 75-94% by weight, MgO component 0.8-3% by weight, TiO_2 component 2.7-7% by weight
, and 1 to 3% by weight of a chinastone component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52003381A JPS5936364B2 (en) | 1977-01-13 | 1977-01-13 | Ceramic composition for electronic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52003381A JPS5936364B2 (en) | 1977-01-13 | 1977-01-13 | Ceramic composition for electronic parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5388200A JPS5388200A (en) | 1978-08-03 |
| JPS5936364B2 true JPS5936364B2 (en) | 1984-09-03 |
Family
ID=11555764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52003381A Expired JPS5936364B2 (en) | 1977-01-13 | 1977-01-13 | Ceramic composition for electronic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5936364B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61276350A (en) * | 1985-05-29 | 1986-12-06 | クセラム | Alumina mutually connected substrate for electronic component and manufacture thereof |
-
1977
- 1977-01-13 JP JP52003381A patent/JPS5936364B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5388200A (en) | 1978-08-03 |
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