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JPS5936740B2 - Mask production method - Google Patents
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JPS5936740B2 - Mask production method - Google Patents

Mask production method

Info

Publication number
JPS5936740B2
JPS5936740B2 JP49112154A JP11215474A JPS5936740B2 JP S5936740 B2 JPS5936740 B2 JP S5936740B2 JP 49112154 A JP49112154 A JP 49112154A JP 11215474 A JP11215474 A JP 11215474A JP S5936740 B2 JPS5936740 B2 JP S5936740B2
Authority
JP
Japan
Prior art keywords
mask
exposure
original optical
pitch
optical mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49112154A
Other languages
Japanese (ja)
Other versions
JPS5138878A (en
Inventor
勇 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP49112154A priority Critical patent/JPS5936740B2/en
Publication of JPS5138878A publication Critical patent/JPS5138878A/ja
Publication of JPS5936740B2 publication Critical patent/JPS5936740B2/en
Expired legal-status Critical Current

Links

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • ing And Chemical Polishing (AREA)

Description

【発明の詳細な説明】 本発明は、微細パターン特にストライプ状の微細パター
ンを有する光学的なマスクの作製法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing an optical mask having a fine pattern, particularly a striped fine pattern.

例えば蓄積管のターゲットに於ては、第1図に示すよう
に管体のフェースプレート1の内面に例えばシリコン5
1層より成る電極2を配し、その表面を酸化させて形成
したSiO2より成る絶縁体層3を形成し、この絶縁体
層3をフォトエッチングによつて電極2の一部が露出す
るようにストライプ状(ビーム走査線方向と交わる方向
に平行に延長される)に形成して構成されるものがある
For example, in the target of a storage tube, silicon 5, for example, is coated on the inner surface of the face plate 1 of the tube as shown in FIG.
An electrode 2 made of one layer is disposed, an insulating layer 3 made of SiO2 is formed by oxidizing the surface of the electrode 2, and this insulating layer 3 is photo-etched so that a part of the electrode 2 is exposed. Some are formed in a stripe shape (extended in parallel to the direction intersecting the beam scanning line direction).

又、図示せざるも、フェースプレートの内面に全面的に
被着された導電層よりなるターゲット電極上に全面的に
SiO2の如き絶縁層を介してビーム走査線方向に交わ
る方向に平行に延長する複数のストライプ状電極を櫛歯
状に形成した第1及び第2の電極群を被着して構成され
るターゲットもある。かかるストライプ状の絶縁体層3
又はストライプ状の電極群はいずれもフォトエッチング
技術を用いて形成するものであるが、そのストライプの
線巾及びピッチが極めて微細であるため、即ち1例とし
てストライプの線巾が5μ、ピッチが10μと極めて細
かく、為に之をフォトエッチングによつて形成する際の
フォトマスクの作製は困難を極めている。
Although not shown in the drawings, a target electrode made of a conductive layer is entirely deposited on the inner surface of the face plate, and is extended in parallel to the direction intersecting the beam scanning line direction through an insulating layer such as SiO2. There is also a target constructed by depositing first and second electrode groups each having a plurality of striped electrodes formed in a comb-teeth shape. Such a striped insulator layer 3
Alternatively, the striped electrode groups are all formed using photo-etching technology, but the line width and pitch of the stripes are extremely fine; for example, the line width of the stripes is 5μ and the pitch is 10μ. Because of the extremely fine details, it is extremely difficult to create a photomask when forming these by photoetching.

一方、ストライプパターンのマスクの作製法として、例
えば第1図に示す反復露光装置4を利用した作製法が提
案されている。
On the other hand, as a method for manufacturing a mask having a stripe pattern, a manufacturing method using, for example, a repetitive exposure apparatus 4 shown in FIG. 1 has been proposed.

これは、ストライプパターンが微細な場合、原図を高倍
率(1000〜2000倍)で作成し、この原図から縮
写して第2図に示すような数本〜数十本のストライプ状
の光透過部6〔A、B、C、D〕を有する原光学マスク
(マスターレテイクル)5を設ける。この原光学マスク
5を第1図の装置4に固定し、又原光学マスク5に対向
して配されたテーブルT上に写真乾板8を載置し、写真
乾板8を第3図の原光学マスク5の光透過部6の長手方
向即ちX方向に一軸連続移動させその間はシャッター9
を開放にして光量を一定にしたランプ10より露光を与
える。11はレンズである。
When the stripe pattern is minute, the original image is created at high magnification (1,000 to 2,000 times), and the original image is scaled down to form several to dozens of striped light-transmitting areas as shown in Figure 2. An original optical mask (master reticle) 5 having 6 [A, B, C, D] is provided. This original optical mask 5 is fixed to the apparatus 4 shown in FIG. 1, and a photographic plate 8 is placed on a table T placed opposite to the original optical mask 5. The light transmitting part 6 of the mask 5 is continuously moved uniaxially in the longitudinal direction, that is, in the X direction, and the shutter 9 is moved continuously during that time.
Exposure is applied from a lamp 10 which is kept open and the amount of light is constant. 11 is a lens.

次にX方向の一軸露光が終る毎に、写真乾板8を原光学
マスク5の光透過部6の延長方向と直交する方向即ちY
方向に原光学マスク5の寸法(光透過部6の全体の巾a
に相当)づつ移動し再びX方向の露光を行う。(第4図
参照)全露光工程が終つた後現像処理すれば多数のスト
ライプ状の光透過部及び遮光部からなるパターンのマス
クが得られる。然るに、この場合原光学マスク5を相対
的にY方向に移動して露光したときの継目部分で生ずる
パターンの不一致を防止するために、原光学マスク5と
しては第3図に示すように中間の光透過部6〔B、C〕
の線巾を11としたとき、上下端の光透過部6〔A,D
〕の線巾12を1/21,+α(αは継目部分でのオー
バラツプ分、蓄積管ターゲツトの場合1,二5μ,α=
1μ)として構成される。
Next, every time the uniaxial exposure in the X direction is completed, the photographic plate 8 is
Dimensions of the original optical mask 5 in the direction (total width a of the light transmitting section 6)
) and perform exposure in the X direction again. (See FIG. 4) After all the exposure steps are completed, development is performed to obtain a mask with a pattern consisting of a large number of striped light-transmitting parts and light-blocking parts. However, in this case, in order to prevent pattern mismatch that occurs at the seam portion when the original optical mask 5 is relatively moved in the Y direction and exposed, the original optical mask 5 is moved in the intermediate direction as shown in FIG. Light transmitting part 6 [B, C]
When the line width is 11, the light transmitting parts 6 [A, D
) line width 12 is 1/21, +α (α is the overlap at the joint, 1.25μ in the case of a storage tube target, α=
1μ).

これが為に第4図に示すように写真乾板8の露光部12
の継目部分12aにおいては露光されるべき線巾1,に
於て1/21,+αの巾で2回露光され露光量が多くな
ることによつて線巾の寸法変化が起きる。この線巾の変
化はピツチむらとなつて現われ,このような露光によつ
て作製したマスクを用いて例えば蓄積管のターゲツトを
形成しテレビ画像を得たとき、継目部分が縞状になつて
現われ画質が劣下する。本発明は、斯る点に鑑み第2図
の反復露光装置4を利用するも露光むらによる線巾変化
の全く生じないストライプパターンのマスク作製法を提
供するものである。
For this reason, as shown in FIG.
At the joint portion 12a, the line width 1 to be exposed is exposed twice with a width of 1/21 +α, and as the amount of exposure increases, a dimensional change in line width occurs. This change in line width appears as uneven pitch, and when a television image is obtained by forming, for example, a storage tube target using a mask made by such exposure, the seam appears as stripes. Image quality deteriorates. In view of this, the present invention provides a method for manufacturing a mask with a stripe pattern that does not cause any change in line width due to exposure unevenness even though the repetitive exposure device 4 shown in FIG. 2 is used.

本発明は、先づ第5図に示す如く互に等しい線巾1,を
有する複数本、本例では3本の光透過部13〔A,B,
C〕を等しいピツチで配夕1ルて成る原光学マスク14
を設ける。
First, as shown in FIG.
Original optical mask 14 consisting of one pattern of C] with equal pitch.
will be established.

この原光学マスク14を第2図の反復露光装置4に固定
すると共に之と対向するテーブル7上に最終的にマスク
となる被露光体例えば写真乾板8を載置する。次いで例
えば長いストライプパターンであれば写真乾板をX方向
に一軸連続移動させ、その間シヤツタを開放させて露光
する。次にX方向の露光が終つた毎に写真乾板8をY方
向にある条件の送りピツチで移動し再びX方向の露光を
行い,この操作を繰返す。即ちこの送リピツチは,原光
学マスク14の光透過部6のピツチPを基準とする所定
ピツチをもつて、即ち本例においては第6図の点線(原
光学マスク14に相当)にて示すように1ピツチづつと
する。なお、この送リピツチは光透過部6の全巾aより
小なる所定ピツチに選定される。従つてY方向に関して
は第6図に示すように夫々同一露光部12に於て複数回
、即ち本例では光透過部A,B,Cを通して3回の多重
露光を行うようになす。全露光工程が終つた後、現像す
れば第6図の露光部12が光透過部として成る目的のマ
スクが得られる。
This original optical mask 14 is fixed to the repetitive exposure device 4 shown in FIG. 2, and an object to be exposed, such as a photographic plate 8, which will eventually become a mask, is placed on the table 7 opposite thereto. Next, for example, in the case of a long stripe pattern, the photographic plate is continuously moved uniaxially in the X direction, while the shutter is opened for exposure. Next, each time the exposure in the X direction is completed, the photographic plate 8 is moved in the Y direction at a certain feed pitch and exposure in the X direction is performed again, and this operation is repeated. That is, this feed lip pitch has a predetermined pitch based on the pitch P of the light transmitting portion 6 of the original optical mask 14, that is, in this example, as shown by the dotted line in FIG. 6 (corresponding to the original optical mask 14). 1 pitch at a time. Note that this feed lip pitch is selected to be a predetermined pitch smaller than the total width a of the light transmitting section 6. Therefore, in the Y direction, as shown in FIG. 6, multiple exposure is performed multiple times in the same exposure section 12, that is, in this example, three times through the light transmitting sections A, B, and C. After all the exposure steps are completed, development is performed to obtain the intended mask in which the exposed portions 12 of FIG. 6 are light-transmitting portions.

なお、このようにして得たマスクをマスターマスクとし
て、周知の技術(例えばフオトエツチング技術、等)を
用いてさらに同一パターンのマスクを作製することもで
きる。上述せる本発明によれば、乾板8と原光学マスク
14とを相対的に移動させて順次所定パターンに露光す
る場合、全露光部に対し全て同一回数の多重露光が行な
われることによつて全露光部に対し各部平均した露光量
を与えることが出来、露光むらを解消して全面にわたつ
て均一な線巾を有するストライプ群が得られる。
Further, using the mask thus obtained as a master mask, further masks with the same pattern can be manufactured using a well-known technique (for example, photoetching technique, etc.). According to the present invention described above, when the dry plate 8 and the original optical mask 14 are moved relative to each other to sequentially expose a predetermined pattern, multiple exposures are performed the same number of times for all exposed areas, so that all It is possible to apply an average exposure amount to each exposed area, eliminate uneven exposure, and obtain a group of stripes having a uniform line width over the entire surface.

なお露光開始と露光終了とにおいて多重露光が行なわれ
ない部分が生ずるも、この部分は不要部分として有効領
域から削除すればよい。このような多重露光を経て微細
なストライプパターンのマスクを作製したところ、露光
むらによる周期的な線巾変化は全く発生せず、良好なマ
スクが得られるを認めた。
Note that even if there is a portion where multiple exposure is not performed between the start and end of exposure, this portion may be deleted from the effective area as an unnecessary portion. When a mask with a fine stripe pattern was produced through such multiple exposure, it was found that no periodic line width changes due to exposure unevenness occurred, and a good mask was obtained.

従つて、本発明によるマスク作製法は、例えば蓄積管の
ターゲツトの形成用マスクの作成に適用できる他、同様
のストライプパターンを必要とする各種のマスクの作製
に適用して好適ならしめるものである。
Therefore, the mask manufacturing method according to the present invention can be applied to, for example, manufacturing a mask for forming a target of a storage tube, and can also be suitably applied to manufacturing various masks that require a similar striped pattern. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の説明に供する蓄積管のターゲツトの一
例を示す断面図、第2図は本発明の説明に供する反復露
光装置の一例を示す配置図、第3図は従来のマスク作製
法で用いた原光学マスクを示す平面図、第4図は従来の
マスク作製法による露光状態を示す平面図、第5図は本
発明に用いられる原光学マスクの平面図、第6図は本発
明のマスク作製法による露光状態を示す平面図である。 4は反復露光装置、7はテーブル、8は写真乾板、9は
シヤツタ、10はランプ、13〔A,B,C〕はストラ
イプ状の光透過部、14は原光学マスク、12は露光部
分である。
FIG. 1 is a cross-sectional view showing an example of a target of a storage tube to explain the present invention, FIG. 2 is a layout diagram showing an example of a repetitive exposure device to explain the present invention, and FIG. 3 is a conventional mask manufacturing method. 4 is a plan view showing the exposure state by the conventional mask manufacturing method. FIG. 5 is a plan view of the original optical mask used in the present invention. FIG. 6 is a plan view showing the original optical mask used in the present invention. FIG. 3 is a plan view showing an exposure state according to the mask manufacturing method of FIG. 4 is a repetitive exposure device, 7 is a table, 8 is a photographic plate, 9 is a shutter, 10 is a lamp, 13 [A, B, C] is a striped light transmitting part, 14 is an original optical mask, and 12 is an exposed part. be.

Claims (1)

【特許請求の範囲】[Claims] 1 複数の光透過部を互に等しいピッチで配列して成る
原光学マスクと最終的にマスクとなる被露光体とを互に
対向し、原光学マスクと被露光体とを上記ピッチを基準
とする所定ピッチをもつて相対的に移動して同一露光部
を多重露光せしめるようにして成るマスク作製法。
1. An original optical mask consisting of a plurality of light transmitting parts arranged at equal pitches and an exposed object that will eventually become a mask are placed opposite each other, and the original optical mask and the exposed object are aligned with the above pitch as a reference. A method of manufacturing a mask in which the same exposure area is exposed multiple times by relatively moving at a predetermined pitch.
JP49112154A 1974-09-27 1974-09-27 Mask production method Expired JPS5936740B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49112154A JPS5936740B2 (en) 1974-09-27 1974-09-27 Mask production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49112154A JPS5936740B2 (en) 1974-09-27 1974-09-27 Mask production method

Publications (2)

Publication Number Publication Date
JPS5138878A JPS5138878A (en) 1976-03-31
JPS5936740B2 true JPS5936740B2 (en) 1984-09-05

Family

ID=14579575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49112154A Expired JPS5936740B2 (en) 1974-09-27 1974-09-27 Mask production method

Country Status (1)

Country Link
JP (1) JPS5936740B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198861A (en) * 1986-02-27 1987-09-02 Hoya Corp Reticle

Also Published As

Publication number Publication date
JPS5138878A (en) 1976-03-31

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