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JPS5947381B2 - magnetic bubble storage device - Google Patents
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JPS5947381B2 - magnetic bubble storage device - Google Patents

magnetic bubble storage device

Info

Publication number
JPS5947381B2
JPS5947381B2 JP6595277A JP6595277A JPS5947381B2 JP S5947381 B2 JPS5947381 B2 JP S5947381B2 JP 6595277 A JP6595277 A JP 6595277A JP 6595277 A JP6595277 A JP 6595277A JP S5947381 B2 JPS5947381 B2 JP S5947381B2
Authority
JP
Japan
Prior art keywords
internal address
memory
plane
address
internal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6595277A
Other languages
Japanese (ja)
Other versions
JPS54831A (en
Inventor
八郎 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP6595277A priority Critical patent/JPS5947381B2/en
Publication of JPS54831A publication Critical patent/JPS54831A/en
Publication of JPS5947381B2 publication Critical patent/JPS5947381B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明はファイル記憶装置として実用化されつつある磁
気バブル記憶装置に係る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic bubble storage device that is being put into practical use as a file storage device.

磁気バブル記憶装置は大容量化、小型化、低コスト化と
ともに小消費電力化が望まれている。
Magnetic bubble storage devices are desired to have larger capacity, smaller size, lower cost, and lower power consumption.

このような要求を満たす1つの方法として、多数のバブ
ル・メモリ・チップを複数個のメモリ・プレーンに区分
して実装し、チップの駆動に必要な面内磁界(大電力消
費源)をメモリプレーン単位に選択的に供給する方法が
とられている。このような磁気バブル記憶装置ではプレ
ーン選択アドレスに従つて選択されたメモリプレーンヘ
の、駆動タイミングは、そのプレーン内のバブル・メモ
リ・゛チップの記憶ループの内部アドレスとアクセス要
求に応じた外部アドレスとからアクセス要求の都度決定
されねばならない。
One way to meet these demands is to divide a large number of bubble memory chips into multiple memory planes and implement the in-plane magnetic field (a large power consumption source) required to drive the chips. A method is used to selectively supply units. In such a magnetic bubble storage device, the driving timing for the memory plane selected according to the plane selection address is determined by the internal address of the memory loop of the bubble memory chip in that plane and the external address according to the access request. must be determined for each access request.

そのためには、各メモリ・プレーンに対応しで、各メモ
リ・プレーン内のバブル・メモリ・チップの記憶ループ
の内部アドレスを管理する手段が必要である。従来は面
内磁界の駆動ステップ数に応じで内部アドレスを更新す
る必要から、この手段としでアドレス計数手段を用いた
。しかしながら、各メモリ・プレーン毎に設けたアドレ
ス計数手段は高価であつてメモリ・プレーンの個数が増
大すると、装置コストヘの影響が顕著になる。すなわち
、従来の磁気バブル記憶装置は高価なアドレス計数手段
を多数個必要とするため、装置コストを著しく増大さノ
せる欠陥を有していた。本発明は上記の欠陥を容易に解
決するものであつで、本発明の磁気バブル記憶装置は、
図に示されるように、バブル・メモリ・チップ1を含む
複数個のメモリ・プレーン2と、プレーン選択アト・
レスに応答する各メモリ・プレーン2への面内磁界の選
択的駆動手段6と、バブル・メモリ・チップ1の内部ア
ドレスを各メモリ・プレーン2に対応して記憶する内部
アドレス記憶手段(BAM)3と、この内部アドレス記
憶手段3から前記選択的駆動手段6により選択されたメ
モリ・プレーン2の内部アドレス情報を受け取り、前記
選択的駆動手段6に同期して増減し前記内部アドレス記
憶手段3に接続された内部アドレス計数手段(BAC)
4と、外部アドレス(BA)と前記内部アドレスとに基
ずいて、メモリ・プレーン2への駆動タイミングを与え
るタイミング発生手段(CMP)5とを含んでいる。
This requires a means for managing the internal addresses of the memory loops of the bubble memory chips within each memory plane, corresponding to each memory plane. Conventionally, since it is necessary to update the internal address according to the number of driving steps of the in-plane magnetic field, address counting means has been used as this means. However, the address counting means provided for each memory plane is expensive, and as the number of memory planes increases, the impact on device cost becomes significant. That is, the conventional magnetic bubble storage device requires a large number of expensive address counting means, and therefore has a defect that significantly increases the device cost. The present invention easily solves the above-mentioned deficiencies, and the magnetic bubble storage device of the present invention has the following features:
As shown in the figure, there are a plurality of memory planes 2 including bubble memory chips 1 and a plane selection attenuator.
means 6 for selectively driving an in-plane magnetic field to each memory plane 2 in response to a memory plane 2; and internal address storage means (BAM) for storing an internal address of the bubble memory chip 1 corresponding to each memory plane 2. 3, receives the internal address information of the memory plane 2 selected by the selective driving means 6 from the internal address storage means 3, increases and decreases it in synchronization with the selective driving means 6, and stores it in the internal address storage means 3. Connected internal address counting means (BAC)
4, and timing generating means (CMP) 5 for providing drive timing to the memory plane 2 based on the external address (BA) and the internal address.

すなわち、本来なら多数必要とするアドレス計数手段を
1個だけに減らし、代りに低価格の内部アドレス記憶手
段3を導入した。
That is, the number of address counting means, which would normally be required in large numbers, was reduced to just one, and a low-cost internal address storage means 3 was introduced instead.

図に示した装置では例えば面内磁界の駆動ステツプ数を
選択的駆動手段6に同期して内部アドレス計数手段4で
計数して選択されたメモリ・プレーンの内部アドレスを
管理し、プレーン選択の新旧切換え時に、内部アドレス
計数手段4の内容を内部アドレス記憶手段3の旧プレー
ンに対応した番地に書き込み、新プレーンに対応した番
地の内容を内部アドレス5計数手段4に初期値として設
定する。あるいは面内磁界の駆動ステツプ数を選択的駆
動手段6に同期して内部アドレス計数手段4で計数する
と同時に、内部アドレス記憶手段3の選択されているメ
モリ・プレーンに対応する番地の内:容を逐次書き換え
て行くようにしてもよい。
In the device shown in the figure, for example, the number of driving steps of the in-plane magnetic field is counted by the internal address counting means 4 in synchronization with the selective driving means 6 to manage the internal address of the selected memory plane. At the time of switching, the contents of the internal address counting means 4 are written to the address corresponding to the old plane of the internal address storage means 3, and the contents of the address corresponding to the new plane are set to the internal address 5 counting means 4 as an initial value. Alternatively, the number of driving steps of the in-plane magnetic field is counted by the internal address counting means 4 in synchronization with the selective driving means 6, and at the same time, the contents of the address corresponding to the selected memory plane in the internal address storage means 3 are counted. It is also possible to rewrite it sequentially.

この場合でもメモリ・プレーン選択の切換え時には、新
メモリ・プレーンに対応する内部アドレス記憶手段3の
番地の内容が内部アドレス計数手段4の初期値として設
定される。このように磁気バブル記憶装置を構成すると
、非選択メモリプレーンのチツプ内記憶ループの内部ア
ドレスが全て内部アドレス記憶手段3に残り、選択され
ているメモリプレーンの内部アドレスのみが内部アドレ
ス計数手段4上に置かれて、駆動.手段6と同期しで増
減する。
Even in this case, when switching memory plane selection, the contents of the address in the internal address storage means 3 corresponding to the new memory plane are set as the initial value of the internal address counting means 4. When the magnetic bubble storage device is configured in this way, all the internal addresses of the internal memory loops in the chip of non-selected memory planes remain in the internal address storage means 3, and only the internal addresses of the selected memory plane are stored in the internal address counting means 4. Placed in and driven. It increases and decreases in synchronization with means 6.

このように内部アドレス計数手段4をメモリ・プレーン
の個数分だけ必要とした従来の構成を図示したように1
個の内部アドレス計数手段と1個の内部アドレス記憶手
段3とで構成することによりプレーン数が増えても装置
コストは増大しなくなる。装置コストに占めるアドレス
制御回路部分の割合はそう大きくないとしても、内部ア
ドレスのビツト数がたとえば8ビツトになり、プレーン
数が32程度になると、32個の内部アドレス計数手段
すなわち256ビツト分の内部アドレス計数手段が必要
になり、コスト的に無視できない。
A conventional configuration in which internal address counting means 4 are required as many as the number of memory planes is shown in FIG.
By comprising two internal address counting means and one internal address storage means 3, the device cost does not increase even if the number of planes increases. Although the proportion of the address control circuit portion in the device cost is not so large, if the number of internal address bits becomes, for example, 8 bits and the number of planes becomes about 32, 32 internal address counting means, or 256 bits of internal Address counting means is required, which cannot be ignored in terms of cost.

これらを、8ビツト程度の内部アドレス計数手段1個と
、256ビツトの内部アドレス記憶手段1個に置きかえ
ると、総合的には内部アドレス計数手段4の1ビツトの
コストとランダム・アクセス・メモリ(RAM)からな
る内部アドレス記憶手段の1ビツトのコストの比較にな
り、少なくとも現状のIC技術で見るかぎり、後者が圧
倒的に安価になる。以上に述べた如く、本発明によれば
、高価なアドレス計数手段を多数用いるために装置コス
トが増大していた従来の磁気バブル記憶装置の欠陥を容
易に解決することができる。
If these are replaced with one internal address counting means of about 8 bits and one internal address storage means of 256 bits, the overall cost will be the cost of 1 bit of internal address counting means 4 and the cost of random access memory (RAM). ), the latter is overwhelmingly cheaper, at least as far as current IC technology is concerned. As described above, according to the present invention, it is possible to easily solve the defects of the conventional magnetic bubble storage device, which increases the device cost due to the use of a large number of expensive address counting means.

なお、本発明で用いる内部アドレス記憶手段は時間的余
裕さえあれば、磁気バブルメモリチツプ内で実現するこ
ともできる。
It should be noted that the internal address storage means used in the present invention can be realized within a magnetic bubble memory chip if there is time.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明による磁気バブル記憶装置の構成の主要部を
示す概略図である。 図において、1はバブル・メモリ・チツプ、2なメモリ
・プレーン、3は内部アドレス記憶手段、4は内部アド
レス計数手段、5はタイミング発生手段、6は面内磁界
の選択的駆動手段、矢印は情報の流れる方向を表わす。
The figure is a schematic diagram showing the main parts of the configuration of a magnetic bubble storage device according to the present invention. In the figure, 1 is a bubble memory chip, 2 is a memory plane, 3 is an internal address storage means, 4 is an internal address counting means, 5 is a timing generation means, 6 is a selective driving means for an in-plane magnetic field, and the arrows are Represents the direction in which information flows.

Claims (1)

【特許請求の範囲】 1 バブル・メモリ・チップを含む複数個のメモリ・プ
レーンと、このメモリ・プレーンへの面内磁界の選択的
駆動手段と、前記バブル・メモリ・チップの記憶ループ
の内部アドレスを前記各メモリ・プレーンに対応して記
憶する内部アドレス記憶手段と、この内部アドレス記憶
手段から前記選択的駆動手段により選択されたメモリ・
プレーンの内部アドレス情報を受け取り前記選択的駆動
手段に同期して増減する内部アドレス計数手段と、外部
アドレスと前記内部アドレスに基ずいて前記メモリ・プ
レーンへ駆動タイミングを与えるタイミング発生手段と
を含むことを特徴とする磁気バブル記憶装置。 2 内部アドレス記憶手段への内部アドレス情報の記憶
は、選択されるメモリ・プレーンの新旧切換えの際に内
部アドレス計数手段に管理されている旧メモリ・プレー
ンの内部アドレスを対応する番地に書き込むことにより
行う特許請求の範囲第1項記載の磁気バブル記憶装置。 3 内部アドレス記憶手段への内部アドレス情報の記憶
は、選択されたメモリ・プレーンの面内磁界の駆動に伴
つてその選択されたメモリ・プレーンに対応する前記内
部アドレス記憶手段の番地の内容を逐次書き換えること
により行う特許請求の範囲第1項記載の磁気バブル記憶
装置。
[Scope of Claims] 1. A plurality of memory planes including bubble memory chips, means for selectively driving an in-plane magnetic field to the memory planes, and internal addresses of memory loops of the bubble memory chips. an internal address storage means for storing a memory plane corresponding to each memory plane; and a memory address selected from the internal address storage means by the selective driving means.
The memory plane includes internal address counting means that receives internal address information of the plane and increases or decreases in synchronization with the selective driving means, and timing generating means that provides driving timing to the memory plane based on the external address and the internal address. A magnetic bubble storage device featuring: 2 The internal address information is stored in the internal address storage means by writing the internal address of the old memory plane managed by the internal address counting means to the corresponding address when switching the selected memory plane between the new and old memory planes. A magnetic bubble storage device according to claim 1. 3. The internal address information is stored in the internal address storage means by sequentially storing the contents of the address of the internal address storage means corresponding to the selected memory plane as the in-plane magnetic field of the selected memory plane is driven. A magnetic bubble storage device according to claim 1, which is performed by rewriting.
JP6595277A 1977-06-03 1977-06-03 magnetic bubble storage device Expired JPS5947381B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6595277A JPS5947381B2 (en) 1977-06-03 1977-06-03 magnetic bubble storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6595277A JPS5947381B2 (en) 1977-06-03 1977-06-03 magnetic bubble storage device

Publications (2)

Publication Number Publication Date
JPS54831A JPS54831A (en) 1979-01-06
JPS5947381B2 true JPS5947381B2 (en) 1984-11-19

Family

ID=13301818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6595277A Expired JPS5947381B2 (en) 1977-06-03 1977-06-03 magnetic bubble storage device

Country Status (1)

Country Link
JP (1) JPS5947381B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127935A (en) * 1979-03-22 1980-10-03 Sanyou Concrete Kogyo Kk Fish bank block
JPH039151U (en) * 1988-06-30 1991-01-29

Also Published As

Publication number Publication date
JPS54831A (en) 1979-01-06

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