JPS5949696B2 - Sealing method for semiconductor elements - Google Patents
Sealing method for semiconductor elementsInfo
- Publication number
- JPS5949696B2 JPS5949696B2 JP54140301A JP14030179A JPS5949696B2 JP S5949696 B2 JPS5949696 B2 JP S5949696B2 JP 54140301 A JP54140301 A JP 54140301A JP 14030179 A JP14030179 A JP 14030179A JP S5949696 B2 JPS5949696 B2 JP S5949696B2
- Authority
- JP
- Japan
- Prior art keywords
- sealing
- substrate
- pressure
- lid
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Measuring Fluid Pressure (AREA)
Description
【発明の詳細な説明】 この発明は半導体素子の封着方法に関する。[Detailed description of the invention] The present invention relates to a method for sealing semiconductor elements.
一般に固体撮像素子のような感光性半導体素子は、集積
回路技術によるシリコンMOS型を基礎としているが、
この特性の維持のためには容器の気密性が要求される。
この場合、半導体素子は、チップと、このチップを取付
けた基板と、この基板を覆う蓋部とからなり、基板と蓋
部がいわゆる容器となつている。そして、容器の一部は
ガラスであり、基板の材料であるセラミックとの封着に
はチップの耐熱性を考慮して低温封着が要求され、有機
接着剤例えばエポキシ系樹脂又は低融点半田ガラスが使
用されている。これらの封着には150℃〜400℃の
加熱が必要であるが、温度上昇とともに容器内の圧力は
上昇し、接着剤又は封着剤を押し出すために内部のガス
が部分的にガスの逃げ口をつくり、封着の信頼性を劣化
させ、極端な場合は完全なリークバスを形成するに至る
。この欠点は接着面の平面度向上、接着圧力の増加によ
り多少向上するが、歩留の低下は避けられない上に高価
となる。この発明は上記従来の欠点を解決したもので、
封着加熱時の容器の内圧を外圧と等しく保つようにした
半導体素子の封着方法を提供することを目的とする。Generally, photosensitive semiconductor devices such as solid-state image sensors are based on silicon MOS type integrated circuit technology.
In order to maintain this property, the container must be airtight.
In this case, the semiconductor element consists of a chip, a substrate on which the chip is attached, and a lid that covers the substrate, and the substrate and the lid form a so-called container. A part of the container is made of glass, and low-temperature sealing is required in consideration of the heat resistance of the chip in order to seal it with the ceramic that is the substrate material.Organic adhesive such as epoxy resin or low melting point solder glass is used. These seals require heating between 150°C and 400°C, but as the temperature rises, the pressure inside the container increases, and the internal gas partially escapes to push out the adhesive or sealant. This creates a gap, deteriorates the reliability of the seal, and in extreme cases leads to the formation of a complete leak bath. Although this drawback can be alleviated to some extent by improving the flatness of the bonding surface and increasing the bonding pressure, a decrease in yield is unavoidable and it becomes expensive. This invention solves the above-mentioned conventional drawbacks.
It is an object of the present invention to provide a method for sealing semiconductor elements in which the internal pressure of a container during sealing heating is kept equal to the external pressure.
以下、図面を参照してこの発明の一実施例を詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
一般に半導体素子例えば固体撮像素子である電荷転送素
子は図からも明らかなように、セラミックからなる基板
(ステム)1の一面にチップ(図では省略)が取付けら
れ、このチップを覆うように基板1上にガラスからなる
蓋部2がエポキシ系樹脂のような接着剤3を介して気密
封着されている。そして、前記基板1と蓋部2がいわゆ
る容器となつている。さて、上記のような電荷転送素子
の封着に当つては、先ず基板1の一面にチップをボンデ
ィングした後、封着面側に接着剤3を塗布した蓋部2を
所定の寸法に配置し適当な加圧治具により、約2〜3に
9/(−77fの圧力を加える。Generally speaking, in a semiconductor device such as a charge transfer device, which is a solid-state image sensor, as is clear from the figure, a chip (not shown in the figure) is attached to one surface of a substrate (stem) 1 made of ceramic, and a substrate 1 is attached to cover the chip. A lid part 2 made of glass is hermetically sealed on top with an adhesive 3 such as epoxy resin. The substrate 1 and the lid 2 form a so-called container. Now, when sealing the charge transfer device as described above, first, the chip is bonded to one side of the substrate 1, and then the lid part 2 coated with adhesive 3 is placed on the sealing surface side to a predetermined size. Apply a pressure of about 2 to 3 to 9/(-77f) using a suitable pressure jig.
この圧力の調整は重要ではない。加圧治具として最も簡
単なものはスプリング又はバネ4である。勿論、加熱温
度が高い場合は、バネ4は耐熱弾性材料を使用する必要
がある。このような基板1と蓋部2とを加圧した状態で
、いよいよ封着を行なうが、このときに使用する封着冶
具としては最も簡単な構造のものは図示のようにフラン
ジ式のものである。Adjustment of this pressure is not critical. The simplest pressing jig is a spring or spring 4. Of course, if the heating temperature is high, it is necessary to use a heat-resistant elastic material for the spring 4. With the substrate 1 and the lid part 2 under pressure, sealing is finally performed.The simplest structure of the sealing jig used at this time is the flange type as shown in the figure. be.
即ち、着脱自在の2個のフランジ5,6の内部に、封着
すべき容器つまりバネ4により加圧した基板1及び蓋部
2を必要な数量だけ収納し、フランジ5,6の両面間に
銅製パツキングTを挾んで周辺のボルト8を締め、約2
気圧に耐える強さに保持する。この圧力は加熱温度によ
り調整する必要がある。次に所定の温度に加熱保持され
た炉に、この封着冶具即ちフランジ5,6を入れ、所定
の時間加熱する。That is, the container to be sealed, that is, the substrate 1 and the lid part 2 pressurized by the spring 4, are housed in the required quantity inside the two removable flanges 5 and 6, and between both sides of the flanges 5 and 6. Hold the copper packing T and tighten the bolts 8 around it, about 2
Maintain strength to withstand atmospheric pressure. This pressure needs to be adjusted depending on the heating temperature. Next, the sealing jig, that is, the flanges 5 and 6, is placed in a furnace heated and maintained at a predetermined temperature, and heated for a predetermined time.
この間、フランジ5,6の温度を測定することが望まし
い。加熱工程の後、炉外に出し、常温に下つてからフラ
ンジ5,6をはずす。上記工程において容器内部の圧力
P1と封着治具内部の圧力P,は、PV−RT(Pは圧
力、Vは容積、Tは温度、Rは常数)できめられるが、
Vは一定であるから下に対してPは比例し、P1とP2
は常に等しく保たれる。このため容器内のガスが外部に
出ることはない。この発明の封着方法は上記説明及び図
示のように構成され、封着加熱時の容器の内圧を外圧と
等しく保つようにしているので、この方法によれば封着
面の平面度は必要ではなく、歩留は100%であり、封
着における問題は解決した。During this time, it is desirable to measure the temperature of the flanges 5 and 6. After the heating process, it is taken out of the furnace and the flanges 5 and 6 are removed after it has cooled down to room temperature. In the above process, the pressure P1 inside the container and the pressure P inside the sealing jig are determined by PV-RT (P is pressure, V is volume, T is temperature, and R is a constant).
Since V is constant, P is proportional to the bottom, and P1 and P2
are always kept equal. Therefore, the gas inside the container will not escape to the outside. The sealing method of the present invention is constructed as described above and illustrated, and the internal pressure of the container during sealing heating is kept equal to the external pressure, so according to this method, flatness of the sealing surface is not necessary. The yield was 100%, and the problem with sealing was solved.
又、封着後の容器内圧力は1気圧であり、従来法におけ
る内圧が減圧される危険性がなく、信頼性も一段と向上
する。尚、上記実施例では最も簡単な封着冶具について
説明したが、構造を更に複雑にし、例えば減圧弁(安全
弁)を設けるとか、締付法を操作の容易なネジゴミ方式
にするとか、形状を作業性のよいものにする等変形例は
いろいろ考えられる。Further, the internal pressure of the container after sealing is 1 atm, and there is no risk of the internal pressure being reduced in the conventional method, and reliability is further improved. In the above example, the simplest sealing jig was explained, but the structure could be made even more complicated, such as by providing a pressure reducing valve (safety valve), or by using an easy-to-operate screw thread tightening method, or by modifying the shape. Various modifications can be considered, such as making it more attractive.
又、封着後の内圧が1気圧より若干高めであることは、
容器外からの湿度の侵入に対し有利であるから、封着冶
具内圧力を例えば1気圧より1.1気圧の間に調整でき
る加圧弁を設けることも、封着信頼性を高める手段とし
て有効であり、上記実施例において説明した効果は全く
同様に維持できる。更に上記実施例では、半導体素子と
して電荷転送素子を例にあげたが、この発明は電荷転送
素子に限らず、半導体素子一般に適用できることは言う
迄もない。以上説明したようにこの発明によれば、実用
的価値大なる半導体素子の封着方法を提供することがで
きる。Also, the internal pressure after sealing is slightly higher than 1 atm.
Providing a pressure valve that can adjust the pressure inside the sealing jig, for example between 1 atm and 1.1 atm, is also effective as a means of increasing sealing reliability, since it is advantageous against moisture intrusion from outside the container. Therefore, the effects described in the above embodiments can be maintained in exactly the same way. Further, in the above embodiments, a charge transfer device was used as an example of a semiconductor device, but it goes without saying that the present invention is applicable not only to charge transfer devices but also to semiconductor devices in general. As explained above, according to the present invention, it is possible to provide a method for sealing semiconductor elements with great practical value.
図はこの発明の一実施例に係る半導体素子の封着方法を
示す断面図である。
1 ・・・・・・基板、2・・・・・一蓋部、3・・・
・・・接着剤、4・・・・・・バネ、5,6・・・・・
・フランジ、1・・・・・・パツキング、8 ・・・・
・・ボルト。The figure is a sectional view showing a method for sealing a semiconductor element according to an embodiment of the present invention. 1...Substrate, 2...One lid, 3...
...Adhesive, 4...Spring, 5,6...
・Flange, 1... Packing, 8...
··bolt.
Claims (1)
記チップを覆い接着剤により加熱封着される蓋部とで半
導体チップ内蔵気密容器を構成してなる半導体素子の封
着方法において、前記基板の封着すべき面に接着剤を介
して蓋部を配置するとともにこれら基板及び蓋部を加圧
治具で押えた状態とし、次にこれを、密封しうる封着治
具の内部に収納して該封着治具を密封し、次にこの封着
治具を加熱炉内に入れて前記接着剤により基板及び蓋部
が気密接合される所定温度まで加熱したうえ常温まで冷
やして半導体チップ内蔵気密容器を得ることを特徴とす
る半導体素子の封着方法。1. In a method for sealing a semiconductor element, the airtight container with a built-in semiconductor chip is constituted by a substrate on which a semiconductor chip is attached, and a lid part that covers the chip and is heat-sealed to the substrate with an adhesive. A lid is placed on the surface to be sealed via an adhesive, and the substrate and lid are pressed with a pressure jig, and then this is stored inside a sealing jig that can be sealed. Then, the sealing jig is placed in a heating furnace and heated to a predetermined temperature at which the substrate and lid are hermetically sealed with the adhesive, and then cooled to room temperature to embed the semiconductor chip. A method for sealing semiconductor elements, characterized by obtaining an airtight container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54140301A JPS5949696B2 (en) | 1979-10-30 | 1979-10-30 | Sealing method for semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54140301A JPS5949696B2 (en) | 1979-10-30 | 1979-10-30 | Sealing method for semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5664456A JPS5664456A (en) | 1981-06-01 |
| JPS5949696B2 true JPS5949696B2 (en) | 1984-12-04 |
Family
ID=15265594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54140301A Expired JPS5949696B2 (en) | 1979-10-30 | 1979-10-30 | Sealing method for semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5949696B2 (en) |
-
1979
- 1979-10-30 JP JP54140301A patent/JPS5949696B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5664456A (en) | 1981-06-01 |
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