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JPS596086B2 - Power loss reduction circuit for semiconductor switching elements - Google Patents
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JPS596086B2 - Power loss reduction circuit for semiconductor switching elements - Google Patents

Power loss reduction circuit for semiconductor switching elements

Info

Publication number
JPS596086B2
JPS596086B2 JP2263678A JP2263678A JPS596086B2 JP S596086 B2 JPS596086 B2 JP S596086B2 JP 2263678 A JP2263678 A JP 2263678A JP 2263678 A JP2263678 A JP 2263678A JP S596086 B2 JPS596086 B2 JP S596086B2
Authority
JP
Japan
Prior art keywords
diode
capacitor
loss reduction
anode
reduction circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2263678A
Other languages
Japanese (ja)
Other versions
JPS54114166A (en
Inventor
信穂 柴田
力 瀬里
博保 北山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2263678A priority Critical patent/JPS596086B2/en
Publication of JPS54114166A publication Critical patent/JPS54114166A/en
Publication of JPS596086B2 publication Critical patent/JPS596086B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption

Landscapes

  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)

Description

【発明の詳細な説明】 本発明は半導体スイッチング素子による電力制御回路に
おいて、スイッチング素子のオフ時の電力損失低減回路
の改良に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a power loss reduction circuit when a switching element is turned off in a power control circuit using semiconductor switching elements.

第1図は従来の半導体スイッチング素子の電力制御回路
における損失低減回路の一例である。第1図において、
1は直流電源、2はスイッチング素子、3は還流ダイオ
ード、4は平滑リアクトル5は負荷、6はスイッチング
損失低減回路で、コンデンサT、ダイオード8および抵
抗9によつて構成されている。第2図は、スイッチング
素子がオフするときの素子電流ICおよび素子電圧VC
Eを示す。
FIG. 1 is an example of a loss reduction circuit in a conventional power control circuit for a semiconductor switching element. In Figure 1,
1 is a DC power supply, 2 is a switching element, 3 is a free-wheeling diode, 4 is a smoothing reactor 5 as a load, and 6 is a switching loss reduction circuit, which is composed of a capacitor T, a diode 8, and a resistor 9. Figure 2 shows the element current IC and element voltage VC when the switching element is turned off.
Indicates E.

もし損失低減回路6がなければ、素子電流ICに対して
素子電圧VCEは第2図aに示すようになり、オフ時の
電力損失が大きい。これを改善するため従来では第1図
に示すような損失低減回路6が用いられていた。この回
路が接続された場合の動作について説明する。まずスイ
ッチング素子2が電圧を回復しはじめると同時に、素子
電流ICはコンデンサ7およびダイオード8の直列回路
へ移る。コンデンサ7はそれ以前に抵抗9を介して電源
電圧まで充電されているので、素子電流ICがコンデン
サTへ移ることにより放電し、その端子電圧と電源電圧
との差が素子電圧VCEとなり、第2図のbに示すよう
になる。したがつてコンデン升7の容量が大きくなれば
、素子電圧VCEは第2図cの場合には、第2図aに示
すような素子電圧VCEに比較して電力損失が低減し、
第2図cの場合にはさらにその効果が大きい。しかし、
この回路においてはコンデンサTの充電電流が抵抗9に
損失を生じさせる。スイッチング周波数が高い場合には
この損失が犬きくなり、抵抗器の発熱が大きくなると共
に制御回路の効率が低下する欠点ある。またスイッチン
グ損失抵抗効果を高めるためにコンデンサTの容量を大
きくすると、上記欠点が著しくなる。本発明は上記従来
の欠点である抵抗損失をなくし、制御回路の効率を向上
させることを目的とする。
If the loss reduction circuit 6 were not provided, the element voltage VCE would be as shown in FIG. 2a with respect to the element current IC, and the power loss during off-state would be large. In order to improve this problem, a loss reduction circuit 6 as shown in FIG. 1 has conventionally been used. The operation when this circuit is connected will be explained. First, as soon as the switching element 2 begins to recover its voltage, the element current IC transfers to the series circuit of the capacitor 7 and the diode 8. Since the capacitor 7 has previously been charged to the power supply voltage via the resistor 9, the element current IC transfers to the capacitor T, discharging it, and the difference between its terminal voltage and the power supply voltage becomes the element voltage VCE, and the second The result is as shown in b of the figure. Therefore, if the capacitance of the capacitor 7 becomes larger, the element voltage VCE shown in FIG. 2c will have a lower power loss than the element voltage VCE shown in FIG. 2a,
The effect is even greater in the case of FIG. 2c. but,
In this circuit, the charging current of the capacitor T causes a loss in the resistor 9. When the switching frequency is high, this loss increases, resulting in an increase in heat generation from the resistor and a decrease in the efficiency of the control circuit. Furthermore, if the capacitance of the capacitor T is increased in order to enhance the switching loss resistance effect, the above-mentioned drawback becomes more significant. It is an object of the present invention to eliminate the resistance loss, which is the drawback of the conventional method, and to improve the efficiency of the control circuit.

さらには、損失低減回路のコンデンサの充電時には等価
的にコンデンサ容量を半減し、充電電流のピーク値を低
くすると同時に充電時間を短縮しまた、コンデンサの放
電時には等価的にコンデンサ容量を2倍にすることによ
り損失低減効果を高めることを目的としている。
Furthermore, when charging the capacitor in the loss reduction circuit, the capacitor capacity is equivalently halved, reducing the peak value of the charging current and at the same time shortening the charging time, and when discharging the capacitor, the capacitor capacity is equivalently doubled. The purpose of this is to increase the loss reduction effect.

第3図は本発明の実施例であり、1〜5は第1図と同一
構成である。
FIG. 3 shows an embodiment of the present invention, and numerals 1 to 5 have the same configuration as in FIG. 1.

6は損失低減回路で、10,13はコンデンサ、12,
14,15はダイオード、11はリアクトルである。
6 is a loss reduction circuit, 10, 13 are capacitors, 12,
14 and 15 are diodes, and 11 is a reactor.

スイツチング素子2のオン時には電源1、負荷5、リア
クトル4によつて主回路が構成されると同時に損失低減
回路6において、第1コンデンサ10、リアクトル11
、第3ダイオード12、第2コンデンサ13から成る直
列共振回路が形成され、コンデンサ10および13はそ
れぞれ電源電圧まで充電される。このように直列共振回
路において、コンデンサを2分割し、それぞれを電源電
圧まで充電させることは本発明の一つの特徴である。コ
ンデンサ10および13のキヤパシタンスをCCF〕、
リアクトル11のインダクタンスをL〔H〕とすると、
直列共振回路においてコンデンサ容量は1/2となり、
共振電源のピーク値1pは、電源電圧をVとするとIP
=V/普〔A]となり、共振時間tはt=π/QI′S
ec〕 となり、共振電流は抑制さへ また共振時間も
短縮される。
When the switching element 2 is turned on, the power supply 1, the load 5, and the reactor 4 constitute a main circuit, and at the same time, in the loss reduction circuit 6, the first capacitor 10, the reactor
, a third diode 12, and a second capacitor 13, a series resonant circuit is formed, and the capacitors 10 and 13 are each charged to the power supply voltage. One of the features of the present invention is that in the series resonant circuit, the capacitor is divided into two parts and each part is charged up to the power supply voltage. The capacitance of capacitors 10 and 13 is CCF],
If the inductance of the reactor 11 is L[H],
In a series resonant circuit, the capacitor capacity becomes 1/2,
The peak value 1p of the resonant power supply is IP when the power supply voltage is V.
=V/P[A], and the resonance time t is t=π/QI'S
ec], the resonance current is suppressed, and the resonance time is also shortened.

この共振電流はスイツチング素子2が導通した後に流れ
る電流であり素子の損失はほとんど増加しない。さらに
望ましいことは、従来例のコンデンサ7の充電電流波形
に対して、本発明の共振電流波形は正弦波であり、スイ
ツチング素子のオン時の電流は少なく、したがつてオン
時のスイツチング損失が減少することである。また、共
振回路では従来例のような抵抗損失がない。次にオフ時
に(人第1コンデンサ10および第1ダイオード14な
らびに第2コンデンサ13および第2ダイオード15に
より従来例と同様な動作となるが、コンデンサの容量は
等価的に2倍となり、損失低減効果が高められる。
This resonant current is a current that flows after the switching element 2 becomes conductive, and the loss of the element hardly increases. What is more desirable is that the resonant current waveform of the present invention is a sine wave compared to the charging current waveform of the capacitor 7 in the conventional example, so that the current when the switching element is on is small, and therefore the switching loss when the switching element is on is reduced. It is to be. Furthermore, the resonant circuit does not have resistance loss unlike the conventional example. Next, when off (the first capacitor 10 and first diode 14 and the second capacitor 13 and second diode 15 operate in the same way as the conventional example, the capacitance of the capacitor is equivalently doubled, and the loss reduction effect is is enhanced.

以上のように、本発明によれば、従来比較して抵抗によ
る損失を生ずることなくスイツチング素子のオフ時のス
イツチング損失を低減することができ、制御回路の効率
を向上させることができる利点がある。
As described above, according to the present invention, it is possible to reduce the switching loss when the switching element is turned off without causing loss due to resistance, compared to the conventional method, and there is an advantage that the efficiency of the control circuit can be improved. .

また、コンデンサの充電および放電時の等価容量が異な
るため、充電時には充電電流のピーク値が抑えられると
ともに共振時間が短縮され、放電時には損失低減効果が
大きい利点がある。
Further, since the equivalent capacitance of the capacitor is different during charging and discharging, there is an advantage that the peak value of the charging current is suppressed and the resonance time is shortened during charging, and the loss reduction effect is large during discharging.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(人従来の半導体スイツチング素子の電力損失低
減回路の一例を示す回路図、第2図は従来例における動
作説明図、第3図は本発明の一実施例を示す回路図であ
る。 2・・・・・・スイツチング素子、3・・・・・・還流
ダイオード、6・・・・・・スイツ千ング損失低減回路
、10・・・・・・第1コンデンサ、11・・・・・・
リアクトル、12・・・・・・第3ダイオード、13・
・・・・・第2コンデンサ、14・・・・・・第1ダイ
オ一に 15・・・・・・第2ダイオード。
FIG. 1 is a circuit diagram showing an example of a conventional power loss reduction circuit for a semiconductor switching element, FIG. 2 is a diagram illustrating the operation of the conventional example, and FIG. 3 is a circuit diagram showing an embodiment of the present invention. 2... Switching element, 3... Freewheeling diode, 6... Switching loss reduction circuit, 10... First capacitor, 11...・・・
Reactor, 12...Third diode, 13.
...Second capacitor, 14...First diode 15...Second diode.

Claims (1)

【特許請求の範囲】[Claims] 1 スイッチング制御される半導体素子と、還流ダイオ
ードによつて構成される電力制御回路において、前記還
流ダイオードのカソードに第1コンデンサを介して第1
ダイオードのカソードを接続し前記第1ダイオードのア
ノードを前記還流ダイオードのアノードに接続し、前記
還流ダイオードのカソードに第2ダイオードのカソード
を接続し、前記第2ダイオードのアノードを第2コンデ
ンサを介して前記還流ダイオードのアノードに接続し前
記第1コンデンサと第1ダイオードの接続点にリアクト
ルを介して第3ダイオードのアノードを接続し、前記第
3ダイオードのカソードを前記第2ダイオードと前記第
2コンデンサの接続点に接続して成る半導体スイッチン
グ素子の電力損失低減回路。
1. In a power control circuit composed of a semiconductor element whose switching is controlled and a free-wheeling diode, a first capacitor is connected to the cathode of the free-wheeling diode through a first capacitor.
The cathodes of the diodes are connected, the anode of the first diode is connected to the anode of the freewheeling diode, the cathode of the second diode is connected to the cathode of the freewheeling diode, and the anode of the second diode is connected to the anode of the second diode through a second capacitor. The anode of the third diode is connected to the anode of the free-wheeling diode, the anode of the third diode is connected to the connection point of the first capacitor and the first diode via a reactor, and the cathode of the third diode is connected to the connection point of the first capacitor and the first diode. A power loss reduction circuit consisting of a semiconductor switching element connected to a connection point.
JP2263678A 1978-02-27 1978-02-27 Power loss reduction circuit for semiconductor switching elements Expired JPS596086B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2263678A JPS596086B2 (en) 1978-02-27 1978-02-27 Power loss reduction circuit for semiconductor switching elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2263678A JPS596086B2 (en) 1978-02-27 1978-02-27 Power loss reduction circuit for semiconductor switching elements

Publications (2)

Publication Number Publication Date
JPS54114166A JPS54114166A (en) 1979-09-06
JPS596086B2 true JPS596086B2 (en) 1984-02-09

Family

ID=12088312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2263678A Expired JPS596086B2 (en) 1978-02-27 1978-02-27 Power loss reduction circuit for semiconductor switching elements

Country Status (1)

Country Link
JP (1) JPS596086B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0956150A (en) * 1995-08-11 1997-02-25 Nippon Steel Corp Switching power supply
KR0177873B1 (en) * 1995-12-02 1999-05-15 변승봉 Cyclic Current-Free High-Frequency Soft-Switching FB (Full Bridge) DC-DC Converter
JP2013135570A (en) * 2011-12-27 2013-07-08 Denso Corp Dc-dc converter

Also Published As

Publication number Publication date
JPS54114166A (en) 1979-09-06

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