JPS597353B2 - Processing equipment for etching and deposition using gas plasma - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a processing apparatus for etching, deposition, etc. using gas plasma.

In the LSI manufacturing process, SiO2 film, Si3N
Microfabrication of 4 films, Al films, Poly-Si films, etc. is performed using photolithography technology, and this technology has become an extremely important technology for increasing the density of LSIs.

Microfabrication of these films is performed by selectively etching using a photoresist film pattern formed on the wafer as a mask. Conventionally, the mainstream of this etching technology has been wet etching using liquid chemicals, but there are problems with processing accuracy, work safety, waste liquid treatment, etc., so the development of plasma etching technology using gas plasma is actively underway. Some of the technologies have already been put into practical use. Further, the etching technique using the gas plasma described above is being applied to the deposition technique. Recently, a Si3N4 film produced by plasma CVD has been attracting attention as a passivation film on aluminum. The film formed by this method is deposited at a low temperature of 350°C or higher, and has the effect of blocking moisture and alkalis, so devices using this film are highly reliable even in inexpensive plastic packages. It is something that has a nature. Similar to CDE (chemical dry etching technology), N2 or O2 is activated by microwaves, transported, and introduced into the deposition chamber, and at the same time SiH4 (N2
It has been found that Si3N4 or SiO2 films are deposited on heated Si wafers when the base (base) is introduced without activation. Processing apparatuses for etching, deposition, etc. using plasma include coaxial electrostatic type, parallel plate type, and induction coil type.

In the above apparatus, a sample is placed in a gas plasma atmosphere.

When gas plasma is generated, the gas plasma has a uniform distribution. Therefore, the etching or deposition of the wafer is influenced by the uniformity of the gas plasma, resulting in a disadvantage that variations occur in the processing finish. Additionally, it had the drawback of not being able to process large quantities of samples.
The present invention aims to eliminate the above defects.

The configuration of the present invention will be described in detail below with reference to embodiments shown in the accompanying drawings.

Reference numerals 1 and 2 denote two tubes made of quartz or the like arranged vertically, and inside the tubes, that is, in the gas chamber, a disk-shaped anode electrode plate 3 and a disk-shaped cathode electrode plate 4 are arranged alternately. A large number of plates are arranged in parallel at appropriate intervals.

The electrode plates 3 and 4 are connected and supported by supports 5 and 6 made of insulators. Each of the anode electrode plates 3 is connected to a common conductor 7, and each of the cathode electrodes 4 is connected to a common conductor 8. 9 is a heater, 10 is a gas control unit, 11 and 12 are gas switching valves, 13 and 14 are main valves, 15 is a trap, 16 is a roots blower, and 17 is a vacuum pump, which are piped as shown in the figure. .

18 is a generator, and 19 is a changeover switch, one terminal of which is connected to the conductor 7, and the other terminal connected to the conductor 8.

Reference numeral 20 denotes a sample such as a silicon wafer placed between the anode electrode plate 3 and the cathode electrode plate 4.

22 is a vacuum gauge, and 23 is a temperature controller.

In the above configuration, the gas control unit 10
From there, gas such as CF4 is introduced into tubes 1 and 2,
When high frequency power is applied to the electrode plates 3 and 4 from the generator 18, gas plasma is generated between the electrodes 3 and 4, and the sample is etched or deposited. still,
In the case of a deposition process, it is sufficient to simply place the sample 20 between the anode electrode plate 3 and the cathode electrode plate 4, as shown in FIG. As shown, it is necessary to arrange insulators 21 and 22 above and below the sample 20 and to provide holes in the electrode plates 3 and 4.

Since the present invention is constructed as described above, it has the following effects. (1) Since the anode electrode plate and the cathode electrode plate face each other in parallel, the gas plasma has good uniformity and no deflection occurs in sample processing.

(2) Mass processing of samples becomes possible.

Conventionally, in order to obtain plasma uniformity, for example, 10 to 15 wafers each having a diameter of 100 mm are processed.

However, according to this apparatus, it is possible to process about 100 sheets.

[Brief explanation of the drawing]

The figures show a preferred embodiment of the present device, with FIG. 1 being an overall front explanatory view, FIG. 2 being an external view of the main parts, and FIG. 3 being an explanatory view.

Claims (1)

[Claims] 1 A large number of anode electrode plates 3 and cathode electrode plates 4,
The multi-tiered electrode plates arranged alternately and in parallel at appropriate intervals are placed in a gas chamber, and a sample is placed between the anode electrode plate 3 and cathode electrode plate 4. A processing device for etching, deposition, etc. using gas plasma, characterized in that it is configured as follows.