JPS6010450B2 - Analog-digital converter - Google Patents
Analog-digital converterInfo
- Publication number
- JPS6010450B2 JPS6010450B2 JP11893782A JP11893782A JPS6010450B2 JP S6010450 B2 JPS6010450 B2 JP S6010450B2 JP 11893782 A JP11893782 A JP 11893782A JP 11893782 A JP11893782 A JP 11893782A JP S6010450 B2 JPS6010450 B2 JP S6010450B2
- Authority
- JP
- Japan
- Prior art keywords
- analog
- digital converter
- isolation transformer
- fet
- signals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
- H03M1/08—Continuously compensating for, or preventing, undesired influence of physical parameters of noise
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Analogue/Digital Conversion (AREA)
- Electronic Switches (AREA)
Description
【発明の詳細な説明】
この発明はアナログーデイジタル変換装置に係り、詳し
くは制御用計算機および計測用デ−タ収集システム等に
おいてアナログ入力信号をディジタル信号に変換してデ
ータ処理装置に導入させる入力装置の改良に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an analog-to-digital conversion device, and more specifically, an input device that converts an analog input signal into a digital signal in a control computer, measurement data collection system, etc. and introduces it into a data processing device. This relates to improvements in equipment.
一般にこの種のアナログーディジタル変換装置(以下A
−D変換装置という。Generally, this type of analog-to-digital converter (hereinafter referred to as A
- It is called a D conversion device.
)はフルスケールがlowV〜10V程度の多数のアナ
ログ入力信号を逐次選択走査し、さらに前記アナログ入
力信号をディジタル信号に変換し、そしてそのディジタ
ル信号を時分割によって逐次データ処理装置へ導入させ
るものであり、変換桁数としては2進数8ビット〜16
ビット、通常は12ビット程度を使用し、総合的には約
0.1%程度の変換精度を要求されることが多いoまず
従来のA−D変換装置を第1図に基づいて説明する。) is a device that sequentially selects and scans a large number of analog input signals with a full scale of about low V to 10 V, further converts the analog input signals into digital signals, and then sequentially introduces the digital signals to a data processing device by time division. Yes, the number of digits to be converted is 8 bits to 16 binary numbers.
Bits, usually about 12 bits, are used, and a total conversion accuracy of about 0.1% is often required. First, a conventional A/D converter will be explained based on FIG. 1.
第1図においてA,〜Anは外部からのアナログ入力信
号であり、1はリレーあるいは半導体スイッチ等で構成
され、前記アナログ入力信号A,〜Anを時分割的にt
,〜tnの時間間隔で順次送出させるスキャナ回路、2
は直線性にすぐれ利得が安定し、直流ドリフトの少ない
演算増幅器、3は保持性能のすぐれたサンプル・ホール
ド増幅器(以下S/日増幅器という)、4は前記スキヤ
ナ回路1によって時分割的に逐次送出されたアナログ入
力信号を上記増幅器2,3を介して入力し、それぞれを
ディジタル信号に変換するアナログーディジタル変換器
(以下A一D変換器という。In FIG. 1, A, ~An are analog input signals from the outside, and 1 is composed of a relay or a semiconductor switch, etc., which inputs the analog input signals A, ~An in a time-division manner t.
, ~tn scanner circuit that sequentially transmits data at time intervals of 2
numeral 3 is an operational amplifier with excellent linearity, stable gain, and low DC drift; numeral 3 is a sample-and-hold amplifier (hereinafter referred to as S/day amplifier) with excellent holding performance; and numeral 4 is a time-divisionally sequential transmission of signals by the scanner circuit 1. An analog-to-digital converter (hereinafter referred to as an A-D converter) inputs the analog input signals obtained through the amplifiers 2 and 3 and converts them into digital signals.
)10はアナログーディジタル変換装置である。しかし
、制御用計算機等ではアナログ入力信号は工場あるいは
発電尻所などの電気的ノイズの多い環境の中を長距離に
亘る配線を経由して取込まれるため、各種の妨害ノイズ
が含まれとくに電力線からの商用周波数同相雑音(コモ
ン・モード・ノィズ)が大きい。) 10 is an analog-to-digital converter. However, analog input signals for control computers, etc. are taken in through long-distance wiring in electrically noisy environments such as factories or power generation stations, so they contain various types of interference noise, especially on power lines. The commercial frequency in-phase noise (common mode noise) from
このためスキャナ回路1および演算増幅器21ま同相雑
音抑圧比が大きくかつ大蟹圧の同相雑音が入っても支障
なく動作できることが必要であるが「できれば各チャン
ネルのアナログ入力線と電子計算機あるいはアナログー
ディジタル変換装置の内部回路とは直流的に絶縁されて
いることがのぞましい。これは直流的につながっている
と構成回路部品の故障等が発生した場合1つのチャンネ
ルの故障が全体の動作を護まちせたり或いは事故につな
がる恐れがあるからである。第2図は上記のスキャナ部
分を絶縁トランスおよび電界効果トランジスタ(Fie
ldEffectTra船istor.以下FETと略
す)によって直流的に分離した例であり「あるチャンネ
ルが選択される時間だけトランジスタを導通させて演算
増幅器2に送り込むものである。FETを導通させるの
には具体的には第3図のようにゲート電極とソース電極
の間に別のパルストランスT,.によって直流的に絶縁
を保ちながらゲ−ト導通パルスを与えるのが普通である
。For this reason, it is necessary that the scanner circuit 1 and the operational amplifier 21 have a large common-mode noise suppression ratio and can operate without any problem even if a large amount of common-mode noise is introduced. It is preferable that the internal circuits of the digital converter be isolated in terms of DC.This is because if they are connected in DC, a failure in one channel will protect the entire operation in the event of a failure in a component circuit. This is because there is a risk that the above-mentioned scanner section is connected to an isolation transformer and a field effect transistor (Field Effect Transistor).
ldEffectTra ship istor. This is an example of DC separation using a FET (hereinafter abbreviated as "FET"), and "the transistor is made conductive only for the time when a certain channel is selected, and the transistor is sent to the operational amplifier 2. Specifically, to make the FET conductive, a third As shown in the figure, it is usual to apply a gate conduction pulse while maintaining DC insulation between the gate electrode and the source electrode by another pulse transformer T,.
この場合FETは非選択時に導通しないよう常時オフ特
性ェンハンスメント形MOS形のものが適当である。バ
ィポーラ形トランジスタでも常時オフ特性は得られるが
導適時の内部電圧降下が非直線的であるので高精度を要
するアナログスキヤナ用としては適当ではない。第3図
の場合FETXがNチャンネル形の場合入力信号Aの極
性が様子iが正の高電位、Uが低電位ならば支障ないが
、逆に端子iが低電位、五が高電位となるとェンハンス
メント形MOBであってもゲート電圧OVにおいてソー
ス。In this case, it is appropriate that the FET be of the normally-off characteristic enhancement type MOS type so that it does not conduct when not selected. Bipolar transistors can also provide always-off characteristics, but the internal voltage drop during conduction is nonlinear, so they are not suitable for use in analog scanners that require high precision. In the case of Figure 3, if the FETX is an N-channel type, there is no problem if the polarity of the input signal A is such that i is a positive high potential and U is a low potential, but conversely, if terminal i is a low potential and terminal 5 is a high potential, then Even in an enhancement type MOB, the source at the gate voltage OV.
ドレイン間逆電圧が2〜3V以上になると導適状態にな
るので比較的大きい電圧入力では正負両極性入力には使
用できない。なお、第3図aは絶縁トランスT,入力の
片側にFETスイッチを挿入したものLbは絶縁トラン
スT2巻線の中点に挿入したものである。アナログ入力
が正負両極性信号である場合には第4図のごとく対称形
すなわち逆犠牲に直列接続された2個のFETを各アナ
ログ入力チャンネルに使用すればよいことが考えられる
。When the reverse voltage between the drains is 2 to 3 V or more, the conductive state is reached, so a relatively large voltage input cannot be used for positive and negative polarity inputs. Note that FIG. 3a shows an isolation transformer T with an FET switch inserted on one side of the input, and Lb with an isolation transformer T inserted at the midpoint of the winding. If the analog input is a bipolar signal, it may be possible to use two FETs connected in series in a symmetrical manner, that is, inversely sacrificial, as shown in FIG. 4, for each analog input channel.
第亀図aはFETのソース電極に入力信号を加えるもの
で、i端子が高電位の場合「X,のFETが導通しても
X2がオフ状態であり、五端子側が高電位の場合にはX
2が導通してもX,がオフ状態を継続する。第4図bは
FETのドレイン側に入力信号を加えるもので、i端子
が高電位の場合X,がオフ状態「 ii端子が高電位な
らばX2がオフ状態を確保する。第4図cは絶縁トラン
スT2の巻線中性点にFETスイッチを挿入したもので
直列2素子によりオフ状態を確保する点bの場合と同様
である。しかしながら前述したようにこの種装置の実用
状況では各種ノイズ特に商用周波数の大きい同相数音が
重畳されることが多い。Figure a shows how to apply an input signal to the source electrode of the FET. X
Even if 2 becomes conductive, X continues to be off. Figure 4b shows an input signal applied to the drain side of the FET, and when the i terminal is at a high potential, X is in the off state.If the ii terminal is at a high potential, X2 is in the off state. This is similar to the case of point b, where an FET switch is inserted into the winding neutral point of the isolation transformer T2, and the off state is ensured by two elements in series.However, as mentioned above, in the practical situation of this type of device, various noises, especially In-phase multiple tones with large commercial frequencies are often superimposed.
今例えば第4図aにおいて入力端子i,iiに同相で正
方向に高電圧が加わるとFETX,? X2のソース電
極はドレィン電極に比して正電圧が加わり、導適状態と
なって絶縁トランスT,の1次巻線の電位を持ち上げる
。次に入力様子i,U‘こ同相で負電圧が加わるとX,
軒 X2のソースはドレィンに比し負電位となるのでゲ
ート電極に正電位が加わらない限りFETX,?X2は
オフ状態を継続するが、絶縁トランスT,の1次巻線に
蓄えられた正電荷との間にFETのソース、ドレイン間
で高電圧が加わり、入力の同相雑音の大きさによっては
FETX,,X2の最大ソース、ドレィン間耐圧を超過
し、FETを破壊するに至る。第卑図bの場合はi,山
こ加わる同相雑音が負の場合、X,,X2は導通しト同
相雑音が正の場合、X,,X2はオフ状態であるが同相
雑音の大きさによってはFETX,? X2が破壊する
に至る。第4図cでもbの場合と全く同様であるがFE
T導適時の電荷は絶縁トランスT2の巻線ではなく、パ
ルストランスT,3を含む回路に蓄積される。なお以上
にFETがNチャンネル素子の場合について説明したが
Pチャンネル素子では正負の関係が逆になるだけで同機
の不都合が発生する。この発明は正負両方向アナ。For example, in Fig. 4a, if a high voltage is applied to input terminals i and ii in the positive direction in the same phase, FETX, ? A positive voltage is applied to the source electrode of X2 compared to the drain electrode, and it becomes conductive, raising the potential of the primary winding of the isolation transformer T. Next, when a negative voltage is applied in the same phase to the input state i, U',
Since the source of X2 has a negative potential compared to the drain, unless a positive potential is applied to the gate electrode, FETX, ? X2 continues to be off, but a high voltage is applied between the source and drain of the FET and the positive charge stored in the primary winding of the isolation transformer T, and depending on the magnitude of the input common mode noise, the FET ,, the maximum source-drain breakdown voltage of X2 is exceeded and the FET is destroyed. In the case of Fig. b, if the common-mode noise added is negative, X,, X2 are conductive, and when the common-mode noise is positive, X,, X2 are off, but depending on the magnitude of the common-mode noise. is FETX,? X2 ends up destroying it. In Fig. 4c, it is exactly the same as in case b, but FE
When T conduction is appropriate, the charge is accumulated not in the winding of the isolation transformer T2 but in the circuit including the pulse transformer T,3. Although the case where the FET is an N-channel device has been described above, if the FET is a P-channel device, the same problem will occur if the positive/negative relationship is reversed. This invention can be used in both positive and negative directions.
グ電圧が入力され、しかも高電圧の同相雑音が加わるよ
うな厳しい状況においても前述の不都合を生ぜず「正常
且つ高信頼性のアナログーディジタル変換装置を得るべ
く各種の具体的対策を提供するもので、以下図面につい
て詳細に説明する。第5図はこの発明の一実施例を示す
回路図で、丸は1次側巻線が2分割された絶縁トランス
で、この絶縁トランスT2の1次巻線に接続するのをF
ETのドレィンでなくソース電極とした点に特長を有す
る。This invention provides various concrete measures to obtain a normal and highly reliable analog-to-digital converter that does not cause the above-mentioned disadvantages even under severe conditions such as input of analog voltage and high voltage common mode noise. The drawings will be explained in detail below. Fig. 5 is a circuit diagram showing an embodiment of the present invention. The circle is an isolation transformer whose primary winding is divided into two parts, and the primary winding of this isolation transformer T2 is F to connect to the line
The feature is that the source electrode is used instead of the drain of the ET.
FETは第6図に示すようにその構造上ゲートGに対し
てソースSとドレインDは対称的で同様な構造をしてい
るものが多いが、導適時のゲート電圧を与えるパルスト
ランス巻線の池端を接続する側をソース電極と考えるも
のとする。この様に接続することにより2個のFETの
直列接続はドレィン電極同志となり、この間に配線以外
とくに静電荷を蓄積すべき対地静電容量や導体体積を持
たないため、とくに定電圧ダイオードを挿入しなくても
同相雑音によりFETを破壊しない構成とすることが可
能である。とくに2個のFETを集積回路技術により1
個のシリコンチップ上に機成すれば好都合である。但し
この構成ではパルストランスを1個ですませることはで
きないので第5図aの如く2個のパルストランスT,.
,T,2を使用するか、第5図bの如く1個のパルスト
ランスT,3に2個の2次巻線を設けてもよい。以上の
ように、この発明によれば簡単な構成で同相雑音を除去
できる。As shown in Figure 6, many FETs have similar structures, with the source S and drain D being symmetrical with respect to the gate G. The side to which the pond end is connected is considered to be the source electrode. By connecting in this way, the series connection of two FETs becomes a pair of drain electrodes, and since there is no ground capacitance or conductor volume between which to accumulate static charge other than the wiring, it is necessary to insert a constant voltage diode between them. Even without this, it is possible to create a configuration in which the FET is not destroyed by common mode noise. In particular, two FETs can be combined into one using integrated circuit technology.
It is advantageous if the structure is formed on a single silicon chip. However, in this configuration, it is not possible to use only one pulse transformer, so two pulse transformers T, .
, T,2, or one pulse transformer T,3 may be provided with two secondary windings as shown in FIG. 5b. As described above, according to the present invention, common mode noise can be removed with a simple configuration.
図面の簡単な説鯛
第1図は従来のアナログーディジタル変換装置のブロッ
ク図、第2図はスキャナ回路を絶縁トランスおよびFE
Tで構成した公知の回路例を示すブロック図、第3図a
,bはFETによるスイッチの具体例を示す回路図、第
4図a,b,cはアナログ入力信号が2線式正負両方向
信号の場合のスイッチとして公洋的または容易に類推で
きる回路図、第5図a,bはこの発明の一実施例を示す
回路構成図、第6図はこの発明を説明するためのNチャ
ンネルェンハンスメント形MOS−FETの構造を示す
図である。Brief explanation of the drawings Figure 1 is a block diagram of a conventional analog-to-digital converter, and Figure 2 shows a scanner circuit using an isolation transformer and an FE.
A block diagram showing an example of a known circuit configured with T, FIG. 3a
, b are circuit diagrams showing specific examples of switches using FETs, Figures 4 a, b, and c are circuit diagrams that can be easily analogized to switches when the analog input signal is a two-wire positive and negative signal. Figures a and b are circuit configuration diagrams showing one embodiment of the present invention, and Fig. 6 is a diagram showing the structure of an N-channel enhancement type MOS-FET for explaining the present invention.
図中同一符号は同一あるいは相当部分を示しており、A
,〜Anはアナログ入力信号、1はスキャナ回路、2は
演算増幅器、3はサンプル・ホールド増幅器、4はアナ
ログーディジタル変換器、5はアナログーデイジタル変
換装置、Xは電界効果トランジスタ、T,〜Tnは絶縁
トランス、T,.〜T,3はFET駆動用パルストラン
ス、Zはッェナーダイオード、Dは通常のダイオード、
Rは抵抗、Cはコンデンサである。The same reference numerals in the figures indicate the same or corresponding parts, and A
, ~An is an analog input signal, 1 is a scanner circuit, 2 is an operational amplifier, 3 is a sample-and-hold amplifier, 4 is an analog-to-digital converter, 5 is an analog-to-digital converter, X is a field effect transistor, T, ~ Tn is an isolation transformer, T, . ~T, 3 is a pulse transformer for FET driving, Z is a Jenner diode, D is a normal diode,
R is a resistor and C is a capacitor.
豹1図 館2鎚 繁3図 第4図 鍵5図 簾翁図Leopard 1 Hall 2 hammers Traditional 3 illustrations Figure 4 key 5 diagram Sadao figure
Claims (1)
号を各チヤンネルごとに設けられた絶縁トランスと電子
スイツチにより逐次時分割的に取込むスキヤナ回路と、
逐次取込まれたアナログ信号をデイジタル信号に変換す
るアナログ−デイジタル変換器をそなえたアナログ−デ
イジタル変換装置において、上記絶縁トランスの1次側
巻線を2分割し、これを電界効果トランジスタ2個を経
由して直列接続するが、その際巻線と電界効果トランジ
スタのソース電極を夫々接続するとともに、ドレイン電
極は互に接続するようになし、かつ両トランジスタのソ
ース電極とゲート電極の間に導通用パルス入力を与える
ための別の絶縁トランスを接続したことを特徴とするア
ナログ−デイジタル変換装置。1. A scanner circuit that sequentially receives multiple channels of two-wire positive and negative polarity analog input signals in a time-sharing manner using an isolation transformer and an electronic switch provided for each channel;
In an analog-to-digital converter equipped with an analog-to-digital converter that converts sequentially captured analog signals into digital signals, the primary winding of the isolation transformer is divided into two, and two field-effect transistors are connected to the primary winding of the isolation transformer. In this case, the windings and the source electrodes of the field effect transistors are connected to each other, the drain electrodes are connected to each other, and a conductive wire is connected between the source electrode and the gate electrode of both transistors. An analog-to-digital converter characterized in that another isolation transformer is connected to provide a pulse input.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11893782A JPS6010450B2 (en) | 1982-07-08 | 1982-07-08 | Analog-digital converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11893782A JPS6010450B2 (en) | 1982-07-08 | 1982-07-08 | Analog-digital converter |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50108331A Division JPS5818679B2 (en) | 1975-09-05 | 1975-09-05 | Analog-Digital Henkan Souchi |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5824233A JPS5824233A (en) | 1983-02-14 |
| JPS6010450B2 true JPS6010450B2 (en) | 1985-03-18 |
Family
ID=14748915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11893782A Expired JPS6010450B2 (en) | 1982-07-08 | 1982-07-08 | Analog-digital converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6010450B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4694524B2 (en) * | 2007-03-22 | 2011-06-08 | 三菱電機株式会社 | Isolated analog input device |
| JP7764291B2 (en) * | 2022-03-24 | 2025-11-05 | 株式会社東芝 | Semiconductor device and motor drive system |
-
1982
- 1982-07-08 JP JP11893782A patent/JPS6010450B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5824233A (en) | 1983-02-14 |
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