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JPS6012181B2 - Substrate polishing equipment - Google Patents
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JPS6012181B2 - Substrate polishing equipment - Google Patents

Substrate polishing equipment

Info

Publication number
JPS6012181B2
JPS6012181B2 JP6516982A JP6516982A JPS6012181B2 JP S6012181 B2 JPS6012181 B2 JP S6012181B2 JP 6516982 A JP6516982 A JP 6516982A JP 6516982 A JP6516982 A JP 6516982A JP S6012181 B2 JPS6012181 B2 JP S6012181B2
Authority
JP
Japan
Prior art keywords
substrate
holding
polishing
centering
attachment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6516982A
Other languages
Japanese (ja)
Other versions
JPS58181553A (en
Inventor
俊郎 唐木
純二 渡辺
淳平 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6516982A priority Critical patent/JPS6012181B2/en
Publication of JPS58181553A publication Critical patent/JPS58181553A/en
Publication of JPS6012181B2 publication Critical patent/JPS6012181B2/en
Expired legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/005Feeding or manipulating devices specially adapted to grinding machines

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

【発明の詳細な説明】 本発明は半導体ウェハなどの基板の片面に成長又は付着
した異種もしくは同種材料が他の片面に飛散したりまわ
り込み不要な付着物となったとき、この他の片面の付着
物のみを除去するための基板研摩装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for removing or removing material from a substrate, such as a semiconductor wafer, when a different or similar material that has grown or adhered to one side of the substrate scatters or wraps around the other side and becomes an unnecessary deposit. The present invention relates to a substrate polishing device for removing only deposits.

第1図はシリコンなど半導体ゥェハ1の片面に異種材料
を成長させた場合の断面を示すものである。
FIG. 1 shows a cross section when a different material is grown on one side of a semiconductor wafer 1 such as silicon.

半導体ウェハ1の表面上には異種材料の堆積層2が成長
もしくは付着される。この堆積層2の形成が半導体ウェ
ハ1の表面のみに形成されれば問題はないのであるが、
製造上半導体ウェハ1の裏面にまで異種材料がまわり込
み周辺部の付着物3が形成され、また裏面中央に飛散し
て付着物4が形成してしまう問題が生じていた。この付
着物3および4の除去の必要性は「堆積層2の面鰍ま1
増数Am以上の凹凸があってしかも堆積層2自体の厚さ
も均一でなくloAm前後の厚さむらが生ずるのが一般
的であるが〜堆積層2の面Bを半導体ウェハ亀の裏面A
を基準として平行かつ平坦に研摩する場合には半導体ウ
ェハ亀の形状を損わずに裏面Aの付着物3および4のみ
を除去し半導体ウェハの処女面と再生することが重要で
あることによる。従来「 この付着物3および蟹を除去
する方法としては「ハンドラップによる方法あるいは堆
積層2の面Bを被覆してエッチングする方法があるが、
これらの方法では長時間を要するばかりでなく工程が煩
雑で手作業で行なうため再現性が低く、半導体ゥヱル量
の裏面Aをも不均一に加工してしまいも基準面としての
再性加工は困難であった。
A deposited layer 2 of a different material is grown or deposited on the surface of the semiconductor wafer 1 . There is no problem if this deposited layer 2 is formed only on the surface of the semiconductor wafer 1, but
During manufacturing, there has been a problem in that foreign materials wrap around the back surface of the semiconductor wafer 1, forming deposits 3 on the periphery, and are also scattered to form deposits 4 at the center of the back surface. The need to remove these deposits 3 and 4 is
It is common for the deposited layer 2 to have irregularities of more than Am and the thickness of the deposited layer 2 itself is not uniform, resulting in uneven thickness around loAm.
This is because when polishing is performed parallel and flat with reference to , it is important to remove only the deposits 3 and 4 on the back surface A without damaging the shape of the semiconductor wafer turtle, and regenerate it as the virgin surface of the semiconductor wafer. Conventionally, methods for removing the deposits 3 and crabs include a hand-wrapping method or a method of covering the surface B of the deposited layer 2 and etching it.
These methods not only take a long time, but also have complicated processes and low reproducibility because they are performed manually, and even if the back side A of the semiconductor layer is processed unevenly, it is difficult to reprocess it as a reference surface. Met.

この再生加工を好適に行なうものとして従来提案された
技術としては、弾性フレキシブル薄形磁石を回転させつ
つ堆積層2を有する半導体ウェハ竃(以下基板と称する
)に押しつける研摩処理方法が存在するが〜 この研摩
処理は未だ基板の連続加工にまで発展したものでなく装
置による自動研摩、連続加工は実現されておらず、実用
上問題がある。
As a technique that has been proposed in the past to suitably carry out this reprocessing process, there is a polishing method in which an elastic thin thin magnet is rotated and pressed against a semiconductor wafer furnace (hereinafter referred to as a substrate) having a deposited layer 2. This polishing process has not yet been developed to the extent of continuous processing of substrates, and automatic polishing and continuous processing using equipment has not been realized, which poses a practical problem.

そこで、本発明は上述の欠点に鑑み「手作業の再生加工
は除去することばもちろん〜研摩処理を連続加工でき自
動化してし処理前の基板収納カセットから処理後の基板
収熱カセットまでの研摩処理を連続工程により自動化し
得るいわゆるカセット・ッウ・カセットの自動研摩の実
現を可能とした基板研摩装置の提供を目的とする。
Therefore, in view of the above-mentioned drawbacks, the present invention aims to eliminate the need for manual reprocessing, as well as to automate the polishing process in a continuous manner, from the substrate storage cassette before processing to the substrate heat absorption cassette after processing. The object of the present invention is to provide a substrate polishing device that can realize automatic polishing of so-called cassettes, which can be automated in a continuous process.

かかる目的を達成するため本発明としてはち カセット
内に収納された研摩処理前の基板を着脱り移送する着脱
機構と「 この着脱機構にて移送された上記基板を位置
決め・芯出しする芯出し機構とし この芯出し機構にお
ける上記基板を保持し回転させる保持回転機構と、この
保持回転機構における上記基板を研摩処理する弾性フレ
キシブル薄形砥石工具を駆動する工具駆動機構とt上記
保持回転機構における研摩処理された基板を着脱すると
共に別のカセット内に移送する上記着脱機構とを有する
ことを特徴とする。
In order to achieve such an object, the present invention includes a mounting/detachment mechanism for attaching/detaching a substrate before polishing stored in a cassette, and a centering mechanism for positioning and centering the substrate transferred by the mounting/detachment mechanism. A holding and rotating mechanism that holds and rotates the substrate in this centering mechanism, a tool drive mechanism that drives an elastic thin grindstone tool that polishes the substrate in this holding and rotating mechanism, and a tool drive mechanism that drives an elastic thin grindstone tool that polishes the substrate in the holding and rotating mechanism. The present invention is characterized in that it has the above-mentioned attachment/detachment mechanism for attaching/detaching the substrate and transferring it into another cassette.

ここで「第2図を参照して本発明の基板研摩装層の実施
例を説明する。
An embodiment of the substrate polishing layer of the present invention will now be described with reference to FIG.

キャリ一台5には研摩処理前の基板6aを収納するカセ
ット?と研摩処理後の基板6bを収納するカセットSと
が並置され、このキャリ一台5は基板6a「又は6bの
ピッチに相当して定寸移動するものである。キャlj一
合別こ対して基板63を並行移動できる位置に芯出し機
構部9が存在する。
Is each carrier 5 a cassette for storing the substrate 6a before polishing? and a cassette S for storing the substrate 6b after polishing are juxtaposed, and this single carrier 5 moves by a fixed distance corresponding to the pitch of the substrate 6a or 6b. A centering mechanism section 9 exists at a position where the substrate 63 can be moved in parallel.

この芯出し機構部9は少なくとも3個(例えば6個)の
カムより構成され、このカムの回転によって基板6aの
外周を均一にはさみ込み位置決めと芯出しを行なうもの
である。芯出し機構部gと同一軸心上にあって芯出し機
構部9間に織部が位置できるように移送部亀Dが配題さ
れ「 この移送部竃8では芯世し機構部鶴亀こてはさみ
込まれた基板6aを真空吸着して保持すると共に前方に
基板6aを移送する機能を有する。芯出し機構部gおよ
び移送部軍8と対向してこれらと同一轍心上には1仇岬
程度前進・後退できるワークヘッド翼亀が函層され「
このワークヘッド再1さま基板を真空吸引して保持する
とともに研摩時50〜30仇pmの範囲で無段階変速回
転できる保持回転機構官2と一体に構成されている。
This centering mechanism section 9 is composed of at least three (for example, six) cams, and the rotation of these cams uniformly sandwiches the outer periphery of the substrate 6a for positioning and centering. The transfer part turtle D is located on the same axis as the centering mechanism part g and so that the weaving part can be located between the centering mechanism parts 9. It has a function of holding the sandwiched substrate 6a by vacuum suction and transferring the substrate 6a forward.There is a cape 1 on the same track facing the centering mechanism part g and the transfer part 8. The work head winged turtle that can move forward and backward is mounted in a box.
The work head 1 is integrated with a holding rotation mechanism member 2 which holds the substrate by vacuum suction and can rotate at a stepless speed in the range of 50 to 30 pm during polishing.

ベッド葛3にはアーム母4が基板の移送方向と同様に移
動できるように取付けられもこのアーム量4にはモータ
貴5とこのモータ亀5によって駆動される弾性フレキシ
ブル簿形砥石工具のような付着物加工工具畳鰭(以下工
具亀6という)の工具駆動機構部亀7「および基板の着
脱母移送を行なう着脱機構部亀8が取付けられている。
An arm base 4 is attached to the bed gear 3 so as to be movable in the same direction as the board transfer direction.The arm base 4 is equipped with a motor 5 and an elastic flexible book-shaped grindstone tool driven by the motor turtle 5. A tool drive mechanism part turtle 7 for a deposit processing tool mat fin (hereinafter referred to as tool turtle 6) and a detachment mechanism part turtle 8 for attaching and detaching the substrate are attached.

この場合も工具翼6はその傾き8L押込み(功込み)量
8をそれぞれ一900〜90Qへ 0〜IQ肋の範囲で
可変調整できて付着物の量に対応できるようになってい
る。また「着脱機構部軍81ま研摩加工前の基板6aを
カセット?から芯出し機構部gへ移送すると共に研摩加
工後の基板6bをワークヘッド11からカセット8へ移
送する動きを同時に行なえる機能を有する。この着脱機
構部18の基板の保持は真空吸引によっている。なお、
第2図中省略してあるがアーム亀4‘こは工具翼6の近
くに加工液を供給するノズルが設けられ〜液ポンプによ
って加工液が供給される。
In this case as well, the inclination 8L of the tool blade 6 can be variably adjusted in the push-in amount 8 from 1900 to 90Q, respectively, in the range of 0 to IQ, so that it can correspond to the amount of deposits. In addition, the attachment/detachment mechanism unit 81 has a function that allows it to simultaneously transfer the substrate 6a before polishing from the cassette to the centering mechanism g, and simultaneously transfer the substrate 6b after polishing from the work head 11 to the cassette 8. The board of the attachment/detachment mechanism 18 is held by vacuum suction.
Although not shown in FIG. 2, a nozzle for supplying machining fluid is provided near the tool blade 6 on the arm turtle 4', and the machining fluid is supplied by a fluid pump.

ざらにト駆動系、真空系、加工液供給などはすべて制御
盤19の指令にもとづき実行される。以上本実施例の各
部分の説明をしたが、ついで動作と共に、更に詳細に説
明する。
All operations such as the rough drive system, vacuum system, and machining fluid supply are executed based on commands from the control panel 19. Each part of this embodiment has been described above, and will now be described in more detail along with its operation.

ワークヘッド11が後退している状態でアーム14がヘ
ッド13上をキャリー台5に向って移動しカセット7お
よび8間で停止すると同時に、キヤリー台5はカセット
7内の基板6a間のピッチ分だけ移動し着脱機構部18
は研摩処理前の基板6aを真空吸着する。この後、着脱
機構部18は基板6aを保持したまま芯出し機構部9に
移送され、この中央部にてワークヘッド1 1が前進し
て着脱機構部18を押しその端すなわち基板6aが芯出
し機構部9内に入り込むと同時に一時的に基板6aは自
由状態になるが直ちに6本のカムにより外周をはさみ込
んで基板6aの位置決めと芯出しが行なわれる。芯出し
後の基板6aは今度移送部1川こより真空吸着されて保
持され、同一軸上にある保持回転機構部12のワークヘ
ッド11に移送される。このとき、ワ−クヘツド11も
前進していて基板6aが到達した時点でワークヘッド1
1に基板6aが吸着される。その後、移送部10が元位
置に戻りまたワークヘッド11も後退する。続いて、着
脱機構部18から芯出し機構部9への基板6aの離脱後
、元位置にあったアーム14がワークヘッド11に向っ
て移動し事前にセットしてある所定の傾き0と押込み量
6による工具16の先端が基板6aの外周部に到ったと
きア−ム14が停止する。そして、ワークヘッド11が
前進して6をもって工具16が基板6aに接触する。こ
のときワークヘッド11は所定の回転数で回転を始め研
摩加工が始まる。基板外周部の付着物が多いときにはア
ーム14を数秒から数分厚満させることによって基板外
周の付着物を除去し「その後アーム14を0〜2仇蛇/
secの速度で後退させることによつて基板上を工具1
6が中央部まで走査して中央の付着物を除去する。加工
終了と同時にワークヘッド11が後退して基板から工具
16が離れ、アーム14が前進して着脱機構部18がワ
ークヘッド11の中央付近まで到達する。そして、ワー
クヘッド11の前進とともに加工後の基板6bをこの着
脱機構部18で真空吸着すると共に基板6bをワークヘ
ッド11の吸着盤から確実に離すため空気を吹き出させ
る。こうして、着脱機構部18による基板6bの保持後
ワークヘッド11を後退させてアーム14がベッド13
上を移動し、研摩処理後の基板6bをカセット8内に収
納する。このとき、カセット8および7の基板ピッチ分
だけキャリ一台5が動き、次に加工すべき基板6aが着
脱機構部18に保持されて前述の動作を繰返す。こうし
て基板は連続的に加工処理される。この工程中、各動作
は制御部19により事前に設定したデータにもとづき指
令伝達が行なわれる。以上説明したように本発明によれ
ば、各機構部の動作を基板の移動とともに自動制御する
ことができて、従来のように手作業によらず連続加工で
き、加工前の基板ほ収納したカセットを設置してお仇ま
、自動的に付着物のみを除去して基準面を再生でき能率
・歩留りが向上し無人の研摩処理が可能となった。
While the work head 11 is retracted, the arm 14 moves over the head 13 toward the carry stand 5 and stops between the cassettes 7 and 8, and at the same time, the carry stand 5 moves by the pitch between the substrates 6a in the cassette 7. Moving attachment/detachment mechanism section 18
vacuum adsorbs the substrate 6a before polishing. Thereafter, the attachment/detachment mechanism section 18 is transferred to the centering mechanism section 9 while holding the substrate 6a, and the work head 11 moves forward at the center of the attachment mechanism section 18 and pushes the attachment/detachment mechanism section 18 so that its end, that is, the substrate 6a, is centered. As soon as the substrate 6a enters the mechanism section 9, it becomes temporarily free, but the six cams immediately sandwich the outer periphery and position and center the substrate 6a. The substrate 6a after centering is then vacuum-adsorbed and held from the transfer section 1, and transferred to the work head 11 of the holding and rotating mechanism section 12 located on the same axis. At this time, the work head 11 is also moving forward, and when the substrate 6a arrives, the work head 11 moves forward.
The substrate 6a is attracted to the substrate 1. Thereafter, the transfer section 10 returns to its original position and the work head 11 also retreats. Subsequently, after the substrate 6a is removed from the attachment/detachment mechanism 18 to the centering mechanism 9, the arm 14 in its original position moves toward the work head 11 and reaches a predetermined inclination of 0 and pushing amount. When the tip of the tool 16 by 6 reaches the outer periphery of the substrate 6a, the arm 14 stops. Then, the work head 11 moves forward and the tool 16 comes into contact with the substrate 6a. At this time, the work head 11 starts rotating at a predetermined rotational speed and polishing begins. If there is a lot of deposits on the outer periphery of the substrate, remove the deposits on the outer periphery of the substrate by letting the arm 14 thicken for several seconds to several minutes.
The tool 1 is moved over the board by retracting at a speed of
6 scans to the center and removes the deposits in the center. Simultaneously with the completion of machining, the work head 11 retreats to separate the tool 16 from the substrate, and the arm 14 moves forward so that the attachment/detachment mechanism 18 reaches near the center of the work head 11. Then, as the work head 11 moves forward, the processed substrate 6b is vacuum-suctioned by the attachment/detachment mechanism 18, and air is blown out to ensure that the substrate 6b is separated from the suction cup of the work head 11. In this way, after the substrate 6b is held by the attachment/detachment mechanism 18, the work head 11 is moved backward, and the arm 14 is attached to the bed 13.
The polished substrate 6b is stored in the cassette 8. At this time, one carrier 5 moves by the substrate pitch of the cassettes 8 and 7, and the substrate 6a to be processed next is held by the attachment/detachment mechanism section 18, and the above-described operation is repeated. In this way, the substrate is processed continuously. During this process, commands are transmitted for each operation based on data set in advance by the control section 19. As explained above, according to the present invention, the operation of each mechanical part can be automatically controlled along with the movement of the substrate, and continuous processing can be performed without manual work as in the conventional method. By installing the machine, it is possible to automatically remove only the deposits and regenerate the reference surface, improving efficiency and yield, and making unattended polishing possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は基板の断面図、第2図は本発明による基板研摩
装置の一実施例の構成図である。 図面中、6a,6bは基板、7,8はカセット「 9は
芯出し機構部、12は保持回転機構部、16は工具、1
7は工具駆動機構部、18は着脱機構部である。 第1図 第2図
FIG. 1 is a sectional view of a substrate, and FIG. 2 is a configuration diagram of an embodiment of a substrate polishing apparatus according to the present invention. In the drawings, 6a and 6b are substrates, 7 and 8 are cassettes, 9 is a centering mechanism section, 12 is a holding rotation mechanism section, 16 is a tool, 1
7 is a tool drive mechanism section, and 18 is an attachment/detachment mechanism section. Figure 1 Figure 2

Claims (1)

【特許請求の範囲】 1 カセツト内に収納された研摩処理前の基板を着脱・
移送する着脱機構にて移送された上記基板を位置決め・
芯出しする芯出し機構と、この芯出し機構における上記
基板を保持し回転させる保持回転機構と、この保持回転
機構における上記基板を研摩処理する弾性フレキシブル
薄形砥石工具を駆動する工具駆動機構と、上記保持回転
機構における研摩処理された基板を着脱すると共に別の
カセツト内に移送する上記着脱機構とを有する基板研摩
装置。 2 研摩処理前の基板を収納するカセツトと研摩処理後
の基板を収納する別のカセツトとを並置すると共に基板
間のピツチ分だけ定寸移動させ、着脱機構による上記両
カセツトの基板着脱及び移送を同一動作内にて行なう特
許請求の範囲第1項記載の基板研摩装置。 3 芯出し機構と保持回転機構とを対向して配置すると
共に同一軸心上に一致させ、芯出し後の基板を上記保持
回転機構に移送して保持する特許請求の範囲第1項記載
の基板研摩装置。 4 着脱機構、芯出し機構、保持回転機構及び工具駆動
機構それぞれを制御盤からの制御にて連続的に作動させ
た特許請求の範囲第1項記載の基板研摩装置。 5 保持回転工具における基板に弾性フレキシブル薄形
砥石工具を任意角度ならびに任意押込み量にて押付けて
研摩処理する特許請求の範囲第1項記載の基板研摩装置
[Claims] 1. Mounting/detachment of the substrate before polishing stored in the cassette.
The above-mentioned board transferred by the transferring attachment/detachment mechanism is positioned and
a centering mechanism for centering; a holding and rotating mechanism for holding and rotating the substrate in this centering mechanism; a tool driving mechanism for driving an elastic thin grindstone tool for polishing the substrate in this holding and rotating mechanism; A substrate polishing apparatus comprising the above-mentioned attachment/detachment mechanism for loading and unloading the polished substrate in the holding/rotating mechanism and transferring it into another cassette. 2. A cassette for storing substrates before polishing and another cassette for storing substrates after polishing are placed side by side and moved by a fixed distance by the pitch between the substrates, and the attachment/detachment mechanism allows the attachment/detachment mechanism to attach/detach the substrates and transfer the two cassettes. A substrate polishing apparatus according to claim 1, which performs the polishing within the same operation. 3. The substrate according to claim 1, wherein a centering mechanism and a holding/rotating mechanism are arranged opposite to each other and aligned on the same axis, and the substrate after centering is transferred to and held by the holding/rotating mechanism. Polishing equipment. 4. The substrate polishing apparatus according to claim 1, wherein the attachment/detachment mechanism, the centering mechanism, the holding/rotating mechanism, and the tool drive mechanism are each operated continuously under control from a control panel. 5. The substrate polishing apparatus according to claim 1, wherein the substrate in the holding rotary tool is polished by pressing an elastic flexible thin grindstone tool at an arbitrary angle and an arbitrary pushing amount.
JP6516982A 1982-04-19 1982-04-19 Substrate polishing equipment Expired JPS6012181B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6516982A JPS6012181B2 (en) 1982-04-19 1982-04-19 Substrate polishing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6516982A JPS6012181B2 (en) 1982-04-19 1982-04-19 Substrate polishing equipment

Publications (2)

Publication Number Publication Date
JPS58181553A JPS58181553A (en) 1983-10-24
JPS6012181B2 true JPS6012181B2 (en) 1985-03-30

Family

ID=13279114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6516982A Expired JPS6012181B2 (en) 1982-04-19 1982-04-19 Substrate polishing equipment

Country Status (1)

Country Link
JP (1) JPS6012181B2 (en)

Also Published As

Publication number Publication date
JPS58181553A (en) 1983-10-24

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