JPS6012969B2 - Manufacturing method of boron structural material - Google Patents
Manufacturing method of boron structural materialInfo
- Publication number
- JPS6012969B2 JPS6012969B2 JP7042880A JP7042880A JPS6012969B2 JP S6012969 B2 JPS6012969 B2 JP S6012969B2 JP 7042880 A JP7042880 A JP 7042880A JP 7042880 A JP7042880 A JP 7042880A JP S6012969 B2 JPS6012969 B2 JP S6012969B2
- Authority
- JP
- Japan
- Prior art keywords
- structural material
- tantalum
- chromium
- boron
- shelf
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims 6
- 229910052796 boron Inorganic materials 0.000 title claims 6
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 229910052715 tantalum Inorganic materials 0.000 claims description 17
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 241000282373 Panthera pardus Species 0.000 description 1
- 241000282887 Suidae Species 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012814 acoustic material Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Diaphragms For Electromechanical Transducers (AREA)
Description
【発明の詳細な説明】
本発明は棚素構造材の製造方法に関するもので、棚素構
造材を構成する棚素の膜質や機械的性質および製造上の
歩どまりの向上をはかり、音響材料、特にカートリッジ
用カンチレバーとして好適な棚素横造村を提供するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a shelf element structural material, and aims to improve the film quality and mechanical properties of the shelf element constituting the shelf element structural material, as well as the manufacturing yield. In particular, the present invention provides a shelved horizontal structure suitable as a cantilever for cartridges.
棚素はダイヤモンド‘こ次ぐ硬質をもち、かつ、その耐
摩耗性を非常に大きいものであるため、切削工具や摺動
機織部品、軸受けなどに有用な材料であると共に、また
、比弾性率(弾性率/密度)が現在知られている物質中
では最大という優れた特徴をもっている。Shelf elements have a hardness second only to that of diamond, and have extremely high wear resistance, so they are useful materials for cutting tools, sliding machine parts, bearings, etc., and also have a high specific modulus ( It has the excellent characteristic of having the highest elastic modulus/density among currently known materials.
この性質は音波の伝播速度が既存の物質中で最大である
ということを意味し、音響材料、特にカートリッジ用カ
ンチレバーとして有用である。従来、カートリッジ用カ
ンチレバーとしてはたとえばアルミ合金あるいはチタン
合金などの金属が使用されているがいずれも比弾性率が
棚素に比べて小さく、その周波数特性において、高城共
振周波数fo(通常10kHz〜40kHz)以下の水
批〜10k位の範囲でレスポンスの低下いわゆる中だる
み現象が生じ易く、平坦な周波数特性を得ることが簸か
しいと云う欠点があった。This property means that the propagation velocity of sound waves is the highest among existing materials, making it useful as an acoustic material, particularly as a cantilever for cartridges. Conventionally, metals such as aluminum alloys and titanium alloys have been used as cantilevers for cartridges, but both have a lower specific elastic modulus than that of shelf elements, and their frequency characteristics have a Takagi resonance frequency fo (usually 10 kHz to 40 kHz). There is a drawback that a drop in response, a so-called sagging phenomenon, tends to occur in the range of about 10K to about 10K, and it is difficult to obtain flat frequency characteristics.
さらにはピックアップカートリッジの追従性を左右する
過渡特性も良好なものが得られないと云う欠点があった
。これら公知の材料における欠点を解消するものとして
棚素を用いた力−トリツジ用カンチレバーの出現が待た
れていた。中でもとりわけ棚素テーパーパイプのカート
リッジ用カンチレバーはフラットな棚素パイプのカート
リッジ用カンチレバーに比べて4肌舷以上の高域におけ
る周波数特性の平坦化における寄与度は大きいとされ、
出現が切望されているが、棚素応用製品を、鋳造や圧延
といった方法によって、繊密な構造物の状態で得ること
は困難であり、このために、種々の棚素応用製品に当っ
ては、ほとんどの場合、棚素以外の材料からなる基体上
に蒸着法やスパッタリング法、化学蒸着法(CVD)な
どによって、棚素皮膜を形成した複合体として用いられ
る。上記、従来の棚素皮膜形成法のうちでもCVD法が
最も良質な被膜を得ることができると考えられている。
CVD法では結晶質(8−ロンポヘドラル、Q−ロンボ
ヘドラル、テトラゴナル)の棚素や非晶質(アモルファ
ス)の棚素、あるいはこれらの混在した棚素を生成条件
を変えることにより得ることができるが、一般的には主
としてアモルファスからなる棚素が抗張力等の機械的性
質の点から優れていると評価されている。しかしながら
一般的に棚素を生成するCVD法は熱分解反応を利用す
るため基体に角錘および円錘形状のテーパを設けて、通
電による加熱をおこなった場合、基体の発熱にむらが生
じ、該基体に析出する生成膜は発熱むらに比例あるいは
反比例して性質の異なる膜が析出し、外観ならびに機械
的強度を著しく損なうものである。また、従来一般的に
基体上に析出させた棚素は内在的な歪、マイクロクラッ
ク等により機械的性質が劣弱である場合がいまし‘まで
ある。また発明者らは適当な方法で基体を除去した場合
、これら従来法による棚素は、基体の除去の過程で例外
なく破壊された。これは内在的な歪の大きさを物語るも
のである。発明者らは、基体に適当な処理をほどこすと
ともに相対向しかつ頂点を共有する2ケの角錘もしくは
円錘状に成型し、かつその頂点近傍に放熱体を設けるこ
とによりこれら従来例の問題点を解決したものである。Furthermore, there is a drawback that good transient characteristics, which affect the followability of the pickup cartridge, cannot be obtained. The appearance of a force-torage cantilever using shelving elements has been awaited as a solution to the drawbacks of these known materials. Among them, it is said that the cartridge cantilever of the tapered pipe has a greater contribution to flattening the frequency characteristics in the high range of 4 skinboards or more, compared to the cartridge cantilever of the flat shelf pipe.
However, it is difficult to obtain shelving element applied products in a delicate structure by methods such as casting or rolling, and for this reason, various shelving element applied products are In most cases, it is used as a composite in which a shelf element film is formed on a substrate made of a material other than shelf elements by vapor deposition, sputtering, chemical vapor deposition (CVD), or the like. Among the above-mentioned conventional shelf-base film forming methods, the CVD method is considered to be able to obtain the highest quality film.
In the CVD method, crystalline (8-rombohedral, Q-rombohedral, tetragonal) shelf elements, amorphous (amorphous) shelf elements, or a mixture of these can be obtained by changing the production conditions. In general, shelving elements mainly composed of amorphous materials are considered to be superior in terms of mechanical properties such as tensile strength. However, since the CVD method that generates shelf elements generally utilizes a thermal decomposition reaction, when the substrate is provided with a pyramidal or conical taper and heated by electricity, the heat generation of the substrate becomes uneven. The resulting film deposited on the substrate has different properties in proportion or inverse proportion to the unevenness of heat generation, which significantly impairs the appearance and mechanical strength. Furthermore, the mechanical properties of shelf elements conventionally deposited on a substrate are often poor due to inherent strain, microcracks, etc. Furthermore, when the inventors removed the substrate using an appropriate method, the shelf elements produced by these conventional methods were destroyed without exception during the process of removing the substrate. This shows the magnitude of the inherent distortion. The inventors solved these conventional examples by applying appropriate treatment to the base, molding it into two pyramids or cones that face each other and share a vertex, and providing a heat sink near the vertex. This solves the problem.
本発明の方法により従来のように棚素横造材の破壊もな
く、優れた機械的性質を示し、かつ、外観もよい柵素単
独からなるテーパーパィプ構造材を提供するものである
。また該棚素単独からなるテーパーパィプ構造材はカー
トリッジ用カンチレバーとして優れたものであった。以
下に本発明の方法について具体的に説明する。まず、タ
ンタル、ニオブ、チタン、タングステン、モリブデン、
ニッケルの合金よりなる基板を相対向し、かつ頂点を共
有する2つの角錘もしくは円錘形状に成型する。By the method of the present invention, it is possible to provide a tapered pipe structural material consisting of only fence elements, which exhibits excellent mechanical properties and has a good appearance, without the destruction of horizontal shelf elements as in the past. Moreover, the tapered pipe structure material consisting of the shelf element alone was excellent as a cantilever for a cartridge. The method of the present invention will be specifically explained below. First, tantalum, niobium, titanium, tungsten, molybdenum,
Substrates made of a nickel alloy are formed into two pyramid or cone shapes that face each other and share a vertex.
その方法としては、例えば強酸などによる化学的エッチ
ングによってテーパを形成してもよく、また他の方法と
しては所望形状の金型を作成し、加重あるいは、たたき
出しによって形成する方法、又は研摩によって所望の形
状を形成する方法など種々の方法がある。次に上記の方
法により得られたテーパー状の基体にク。ム、クロムの
棚化物、クロムと鉄からなる合金あるいはこの合金から
なる棚化物を被覆する。この棚化物被膜の厚みは0.2
〜10山肌が望ましい。被覆の方法は種々の方法すなわ
ちメッキや浸棚処理、スパッタ一法、蒸着法、CVD法
がとられるが、制御のしやすさからはスパッタ法が最も
すぐれている。For example, the taper may be formed by chemical etching using strong acid, or other methods include creating a mold with the desired shape and forming it by applying weight or tapping, or by polishing the desired shape. There are various methods for forming shapes. Next, the tapered substrate obtained by the above method was coated. chromium, shelving of chromium, alloys of chromium and iron, or shelving made of these alloys. The thickness of this shelving film is 0.2
~10 mountain surface is desirable. Various coating methods can be used, including plating, immersion plate treatment, sputtering, vapor deposition, and CVD, but the sputtering method is the best in terms of ease of control.
次に、第1図に示すように被覆されたテーパー状基体A
の前記頂点近傍に融点650℃以上の金属からなる放熱
板Bを設置し、これを支持基板となしCVDを行なうも
のである。Next, as shown in FIG. 1, the coated tapered substrate A
A heat radiating plate B made of a metal having a melting point of 650° C. or higher is installed near the apex of , and CVD is performed using this as a supporting substrate.
なお、該放熱板の材料の選択にあたっては、CVDが8
00午○〜125000でおこなわれることから決めら
れるものであるが、放熱板の形状あるいは大きさにより
放熱度が異なるため、標準的なものより実計測されたも
のであり、この融点以下の金属も不可能とは断定できな
い。棚素をCVD法により基体上に形成する方法は、電
熱通電の方式により加熱し、次式に示すごとく還元分解
反応により棚素を析出させる。波X3(十)汎2一$(
十)俳皮(ただし、XはCI、Br、1等のハロゲン元
素)、CVD法に使用される原料ガスとしては、BX3
の他に水素化物等がある。次に上記の如く反応槽内で支
持基体の表面にCVD法により析出させたテーパー状棚
素被膜を有する試料を反応槽内より取り出し、放熱板を
除去し所望の長さに切断したのち、基体を除去して棚素
単独からなるテーパーパィプ構造材を製造するものであ
る。本発明の目的は外観に優れ、機械的性質の優れた棚
素単独からなるテーパ−パイプ構造材を得ることであり
、また本発明において棚素を析出させる方法として、C
VD法に限定した理由は、真空蒸着法では析出速度が遅
くコスト的に問題があるためであり、また、上言己製造
方法は減圧下のCVDであっても、あるいは常圧下のC
VDであっても有効である。In addition, when selecting the material of the heat sink, CVD is 8.
This is determined by the fact that it is carried out between 00:00 and 125,000, but since the degree of heat dissipation varies depending on the shape or size of the heat sink, it is actually measured rather than the standard one, and metals below this melting point are also I can't say for sure that it's impossible. In the method of forming shelf elements on a substrate by the CVD method, heating is performed using an electric heating method, and shelf elements are precipitated by a reductive decomposition reaction as shown in the following formula. Wave X3 (10) Pan 21 $ (
10) BX3 as a raw material gas used in the CVD method (where X is a halogen element such as CI, Br, or 1)
In addition, there are hydrides, etc. Next, the sample having the tapered shelf element film deposited on the surface of the supporting substrate by CVD method in the reaction tank as described above was taken out from the reaction tank, the heat sink was removed, and the sample was cut to a desired length. A tapered pipe structural material consisting of only shelf elements is manufactured by removing the above. The purpose of the present invention is to obtain a tapered pipe structural material made of a single shelf element that has excellent appearance and excellent mechanical properties.
The reason for limiting the method to the VD method is that the vacuum evaporation method has a slow deposition rate and is problematic in terms of cost.
This is valid even for VD.
なお、製造された棚素単独からあるテーパーパィプ構造
材そのものの機械的性質の評価や、音響特性の評価のた
めに、基体を除去することをいよいよ行なったが、それ
には主として化学的な方法によつた。In addition, in order to evaluate the mechanical properties and acoustic characteristics of the tapered pipe structural material itself, which is made from the manufactured shelf element alone, we finally removed the base material, but mainly by chemical methods. Ivy.
以下、本発明の実施例について従来法を対比させてのべ
る。Examples of the present invention will be described below in comparison with conventional methods.
最大径250仏の、最小径150仏仇、長さ5肌の円銭
形状をなし、前述のように頂点を共有するテーパー形状
を有するタンタル並びにタングステンの基体を研磨法に
より作成し、縦3柵、横1肋、厚み0.3肋のタンタル
又はアルミの放熱板を前記頂点近傍に設置した。このよ
うにして作成した基体は次に通りであるすなわち1タン
タル、2タングステン、3クロムを被覆したタンタル、
4クロムを被覆したタングステン、5鉄ークロムの合金
を被覆したタンタル、6タンタル放熱板を設置したタン
タル、7アルミ放熱板を設置したタンタル、8タンタル
放熱板を設置したクロムを被覆したタンタル、9アルミ
放熱板を設置したクロム被覆したタンタル、11タンタ
ル放熱板を設置した鉄−クロム合金を被覆したタンタル
、10タンタル放熱板を設置したクロム被覆したタング
ステンの11種からなる線材を使用した。これらをそれ
ぞれ反応槽内に設置し、塩化側素(BC13)と水素(
日2)との混合ガスを前者については250M/分の割
合で、また後者については1夕/分の割合で給供した。
そして支持基体に通電して1150qoに加熱、発熱さ
せて、6明朗、間保持した支持基体表面に棚素を厚さ2
0ムの析出させた後、これを反応槽より取り出して、放
熱板を切断除去し、長さ5肌に切断した後、基体を除去
した。上記のようにして得られた試料について4肋スパ
ンの両端支持状態にして、中央に一点集中加重をかけ、
クラックを発生したときの荷重で、機械的強度を評価し
た。The tantalum and tungsten base, which has a coin shape with a maximum diameter of 250 cm, a minimum diameter of 150 cm, and a length of 5 cm, and has a tapered shape sharing the apex as described above, is created by a polishing method, and is made with 3 vertical bars. A tantalum or aluminum heat sink having one rib horizontally and 0.3 ribs in thickness was installed near the apex. The substrates thus prepared were: 1 tantalum, 2 tungsten, 3 chromium-coated tantalum,
4 Tungsten coated with chromium, 5 Tantalum coated with iron-chromium alloy, 6 Tantalum with tantalum heat sink, 7 Tantalum with aluminum heat sink, 8 Tantalum coated with chromium with tantalum heat sink, 9 Aluminum Wire rods made of 11 types were used: chromium-coated tantalum with a heat sink installed, tantalum coated with iron-chromium alloy with a 11 tantalum heat sink installed, and chromium-coated tungsten with a 10 tantalum heat sink installed. These were installed in a reaction tank, and hydrogen chloride (BC13) and hydrogen (
Day 2) was supplied at a rate of 250 M/min for the former, and at a rate of 1 pm/min for the latter.
Then, electricity was applied to the supporting substrate to heat it to 1150 qo, and the shelf elements were deposited to a thickness of 2 on the surface of the supporting substrate, which was held for 6 days.
After 0 μm was deposited, it was taken out from the reaction tank, the heat sink was cut off, the heat sink was cut into 5 pieces, and the substrate was removed. The sample obtained as above was supported at both ends of the 4-rib span, and a concentrated load was applied to the center.
Mechanical strength was evaluated based on the load at which cracks occurred.
試料数は各2止本とし、下表にはその平均値を示してい
る。なお、基体を除去し、棚素テーパーパィプ構造材を
得るときの収率についても下表に示した。※1)試料豚
K○印を記したものは本発明によるもの、その他のもの
は従来法である。The number of samples was 2 for each, and the average value is shown in the table below. The table below also shows the yield when removing the base and obtaining the shelf element tapered pipe structural material. *1) Sample pigs Those marked with K○ are those according to the present invention, and the others are those according to the conventional method.
上表の結果から明らかなように、本発明の方法によれば
、機械的強度、棚素テーパーパィプ構造材の収率並びに
外観状態が、従釆法による場合に比べて格段に優れてい
ることがわかる。As is clear from the results in the above table, according to the method of the present invention, the mechanical strength, yield, and appearance of the shelf element tapered pipe structural material are significantly superior to those using the conventional method. Recognize.
また本発明による棚素テーパーパィプ構造材の音響的性
質を評価するために得られた棚素テーパーパイプ構造材
を加工して、カートリッジ用カンチレバーとなし、その
特性を評価した。その結果、第2図のように従来公知の
材料、例えばアルミ合金などで欠点とされていた周波数
特性におけるいわゆる中だるみ現象、さらには追従性を
左右する過渡特性等も数段と向上していた。また歪やマ
イクロクラックのない、高弾性率の棚素被膜は機械的部
材としても用途が広い。In addition, in order to evaluate the acoustic properties of the shelved element tapered pipe structural material according to the present invention, the obtained shelved element tapered pipe structural material was processed into a cantilever for a cartridge, and its characteristics were evaluated. As a result, as shown in Figure 2, the so-called mid-sagging phenomenon in frequency characteristics, which had been considered a drawback with conventionally known materials such as aluminum alloys, as well as the transient characteristics that affect followability, etc., were significantly improved. In addition, the shelving film, which has a high elastic modulus and is free from distortion and microcracks, has a wide range of uses as a mechanical component.
第1図は本発明の製造方法の一工程を示す側面図、第2
図は本発明にかかる棚素テーパーパィプ構造材をカート
リッジ用カンチレバーとなした時の周波数特性を従来の
材料と比較して説明する図である。
A・・・・・・基体、B・・・・・・放熱板。
節1図豹2図FIG. 1 is a side view showing one step of the manufacturing method of the present invention, and FIG.
The figure is a diagram illustrating the frequency characteristics when the shelf element tapered pipe structural material according to the present invention is used as a cantilever for a cartridge in comparison with a conventional material. A: Base, B: Heat sink. Section 1 figure leopard 2 figure
Claims (1)
び円錘形状のテーパ状に成型し、かつ上記基体の頂点近
傍に放熱機能を有する金属からなる放熱体を設置し、し
かるのちに通電によつて加熱し、該支持基体上に化学蒸
着法によつて硼素を形成することを特徴とする硼素構造
材の製造方法。 2 支持基体がタンタル、ニオブ、チタン、タングステ
ン、モリブデンあるいはニツケルよりなる金属から形成
されることを特徴とする特許請求の範囲第1項記載の硼
素構造材の製造方法。 3 放熱体が融点650℃以上の金属よりなることを特
徴とする特許請求の範囲第1項記載の硼素構造材の製造
方法。 4 支持基体がタンタル、ニオブ、チタン、タングステ
ン、モリブデンもしくはニツケルをクロム、クロムの硼
化物、クロムと鉄からなる合金もしくはこの合金の硼化
物を被覆してなるものであることを特徴とする特許請求
の範囲第1項記載の硼素構造材の製造方法。[Scope of Claims] 1 Support substrates are formed into tapered shapes of a pyramid and a cone that face each other and share a vertex, and a heat radiator made of a metal having a heat radiating function is installed near the apex of the base body. A method for producing a boron structural material, which comprises: heating the supporting substrate by applying an electric current to form boron on the supporting substrate by a chemical vapor deposition method. 2. The method for producing a boron structural material according to claim 1, wherein the supporting base is made of a metal such as tantalum, niobium, titanium, tungsten, molybdenum, or nickel. 3. The method for manufacturing a boron structural material according to claim 1, wherein the heat sink is made of a metal having a melting point of 650° C. or higher. 4. A patent claim characterized in that the supporting substrate is made of tantalum, niobium, titanium, tungsten, molybdenum, or nickel coated with chromium, a boride of chromium, an alloy of chromium and iron, or a boride of this alloy. A method for producing a boron structural material according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7042880A JPS6012969B2 (en) | 1980-05-26 | 1980-05-26 | Manufacturing method of boron structural material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7042880A JPS6012969B2 (en) | 1980-05-26 | 1980-05-26 | Manufacturing method of boron structural material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56169123A JPS56169123A (en) | 1981-12-25 |
| JPS6012969B2 true JPS6012969B2 (en) | 1985-04-04 |
Family
ID=13431193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7042880A Expired JPS6012969B2 (en) | 1980-05-26 | 1980-05-26 | Manufacturing method of boron structural material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6012969B2 (en) |
-
1980
- 1980-05-26 JP JP7042880A patent/JPS6012969B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56169123A (en) | 1981-12-25 |
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