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JPS6013966B2 - Manufacturing method of boron structural material - Google Patents
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JPS6013966B2 - Manufacturing method of boron structural material - Google Patents

Manufacturing method of boron structural material

Info

Publication number
JPS6013966B2
JPS6013966B2 JP5892981A JP5892981A JPS6013966B2 JP S6013966 B2 JPS6013966 B2 JP S6013966B2 JP 5892981 A JP5892981 A JP 5892981A JP 5892981 A JP5892981 A JP 5892981A JP S6013966 B2 JPS6013966 B2 JP S6013966B2
Authority
JP
Japan
Prior art keywords
base
structural material
abrasive
rolled
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5892981A
Other languages
Japanese (ja)
Other versions
JPS57175727A (en
Inventor
茂 吉田
正樹 青木
隆三 宮野
治之 植西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5892981A priority Critical patent/JPS6013966B2/en
Publication of JPS57175727A publication Critical patent/JPS57175727A/en
Publication of JPS6013966B2 publication Critical patent/JPS6013966B2/en
Expired legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 本発明は棚素礎造材の製造方法に関するもので、棚素機
造材を構成する棚素の膜質や機械的性質および製造上の
歩どまり向上をはかるとともに音響材料、特にすぐれた
音響特性を持つカートリッジ用カンチレバーに好適な材
料を提供せんとするものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a shelf base material, which aims to improve the film quality and mechanical properties of the shelf base material constituting the shelf base material, and to improve the production yield. The object of the present invention is to provide a material suitable for a cartridge cantilever having particularly excellent acoustic properties.

棚素はダイヤモンド‘こ次ぐ硬度を持ち、かつ、その耐
摩耗性は非常に大きいものであるため、切削工具や摺動
機核部品、軸受けなどに有用な材料であるとともに、比
弾性率(弾性率/密度)が現在知られている物質中で最
大であるという優れた特徴をもっている。
Shelf elements have a hardness second only to that of diamond, and their wear resistance is extremely high, making them useful materials for cutting tools, slider core parts, bearings, etc. /density) is the highest among currently known substances.

この性質は音波の伝播速度が既存の物質中で最大である
ということを意味し、音響材料、特にカートリッジ用カ
ンチレバーとして有用である。従釆、カートリッジ用カ
ンチレバ−としては、例えば、アルミ合金あるいはチタ
ン合金などの金属が使用されているが、いずれも比弾性
率が棚素に比べて小さく、その周波数特性において、高
城共振周波数ら(通常1雌HZ〜40kHZ)以下の狐
HZ〜1皿日2の範囲でレスポンスの低下、いわゆる中
だるみ現象が生じ易く、平坦な周波数特性を得ることが
難しいという欠点があった。
This property means that the propagation velocity of sound waves is the highest among existing materials, making it useful as an acoustic material, particularly as a cantilever for cartridges. For example, metals such as aluminum alloys and titanium alloys are used as cantilevers for cartridges, but the specific elastic modulus of both of them is smaller than that of shelf elements, and their frequency characteristics are lower than the Takagi resonance frequency ( In the range of 1 female HZ to 40 kHz (normally 1 female HZ to 40 kHz) or less, the response tends to decrease, a so-called middle sag phenomenon, tends to occur, and it has the disadvantage that it is difficult to obtain a flat frequency characteristic.

さらにはピックアップカートリッジの追従性を左右する
過渡特性も良好なものが得られないという欠点があった
。これら公知の材料における欠点を解消するものとして
棚素を用いたカートリッジ用カンチレバーの出現がまた
れていた。中でもとりわけ棚素テーパ−パイプのカート
リッジ用カンチレバーはフラットな棚素パイプのカート
リッジ用カンチレバーに比べて4雌HZ以上の高域にお
ける周波数特性の平坦化に大きく寄与するとされ、出現
が切望されているが、棚素応用製品を鋳造や圧延といっ
た方法によって、繊密な構造物の状態で得ることは困難
であり、このために極々の棚素応用製品の製作にあたっ
ては、ほとんどの場合、棚素以外の材料からなる基体上
に蒸着法やスパッタリング法、CVD法などによって棚
素被膜を形成した複合体として用いられる。上記、従来
の棚素被膜形成法のうちでも、CVD法が最も良質な被
膜を得ることができると考えられている。
Furthermore, there is a drawback that good transient characteristics, which affect the followability of the pickup cartridge, cannot be obtained. In order to overcome the drawbacks of these known materials, a cantilever for cartridges using shelf elements has appeared. Among them, the cantilever for cartridges with tapered pipes is said to greatly contribute to flattening the frequency characteristics in the high range of 4 HZ or more, compared to the cantilever for cartridges with flat pipes, and its appearance is eagerly awaited. It is difficult to obtain products using shelving elements in a delicate structure by methods such as casting or rolling, and for this reason, in most cases, when producing products using shelving elements, materials other than shelving elements are used. It is used as a composite in which a shelving film is formed on a substrate made of a material by vapor deposition, sputtering, CVD, or the like. Among the above-mentioned conventional methods for forming a shelving film, the CVD method is considered to be able to obtain the highest quality film.

ただCVD法の場合、析出被膜は支持基体に極めて忠実
に析出するため、該支持基体の表面粗さ状態ならびに形
状によって内存的な歪あるいは機械的性質の優劣に大き
な差が生じる結果となる。また、一般的には適当な方法
で基体を除去した場合、その多くは基体の除去の過程で
破壊ないしは保形されたとしても機械的性質の劣弱なも
のとなつた。
However, in the case of the CVD method, since the deposited film is deposited extremely faithfully on the supporting substrate, the inherent strain or mechanical properties vary greatly depending on the surface roughness and shape of the supporting substrate. Furthermore, in general, when a substrate is removed by an appropriate method, most of the substrates are destroyed or have poor mechanical properties even if their shape is preserved during the removal process.

本発明者は、これら従来例の問題点を、基体形状を頂点
を共有するテーパー形状に形成することと、同時に表面
を一定粗さに研磨することによって解決したものである
The present inventor solved the problems of these conventional examples by forming the base body into a tapered shape that shares a common vertex, and at the same time polishing the surface to a certain roughness.

本発明の方法により従来のように棚素構造材の破壊もな
く、優れた機械的性質を示し、かつ、外観も良い棚素テ
ーパーバィプ構造材を提供することができるものである
。以下に本発明の方法について具体的に説明する。まず
、第1図に示すように頂点を共有するテーパー形状を形
成し得る形状の上下対称をなした一対の転造用金型1,
2の間にタンタル、ニオブ、チタン、タングステン、モ
リブデンもしくはニッケルの金属よりなる線材3をはさ
みこみ、粒径が1〜10仏の研磨剤を適量添加する。こ
の場合、研磨剤は適当な液体に混合分散させて添加する
のが望ましい。しかる後に一定加重を負荷し、線材に対
して垂直方向に前後スライドさせることにより第2図に
示すような一定寸法の頂点を共有するテーパー形状をも
つた基体4に転造形成する。この場合負荷加重ならびに
スライドさせるスピードは綾材の硬度および抗張率、糠
径等によって適正値は舞ってくる。次に、これを支持基
体となして棚素をCVD法によって形成する。前述の方
法にて形成した頂点を共有するテ−パー形状をなし、表
面に一定粗さをもった支持基体上に、棚素を形成する方
法は赤外線加熱方式、抵抗加熱方式、高周波加熱方式等
の外部加熱により、前記の支持基体を均一に加熱、発熱
させて、次式に示すごとく還元分解反応により棚素を析
出させる。波X3(十)斑2一が(十)餌X(但し、X
はCI,軌,1等のハロゲン元素)CVD法に使用され
る原料ガスとしては、BX3の他に水素化物等がある。
By the method of the present invention, it is possible to provide a shelf element tapered vipe structural material that exhibits excellent mechanical properties and has a good appearance without causing destruction of the shelf element structural material as in the past. The method of the present invention will be specifically explained below. First, as shown in Fig. 1, a pair of rolling molds 1 are vertically symmetrical and have a shape capable of forming a tapered shape sharing a common vertex.
A wire rod 3 made of tantalum, niobium, titanium, tungsten, molybdenum, or nickel is sandwiched between the wires 2 and 2, and an appropriate amount of abrasive having a particle size of 1 to 10 mm is added thereto. In this case, it is desirable to add the abrasive after mixing and dispersing it in a suitable liquid. Thereafter, by applying a constant load and sliding the wire back and forth in a direction perpendicular to the wire, the base body 4 is rolled into a tapered shape sharing a vertex of a constant size as shown in FIG. In this case, the appropriate values for the load and sliding speed will vary depending on the hardness and tensile modulus of the twill material, the diameter of the bran, etc. Next, using this as a support base, a shelf element is formed by CVD method. Infrared heating, resistance heating, high frequency heating, etc. are used to form shelf elements on a supporting base that has a tapered shape that shares the apex formed by the above method and has a certain surface roughness. By external heating, the support substrate is uniformly heated and generates heat, and shelf elements are precipitated by a reductive decomposition reaction as shown in the following equation. Wave X3 (10) Spot 21 is (10) Bait X (However,
is a halogen element such as CI, orbital, 1, etc.) In addition to BX3, there are hydrides and the like as raw material gases used in the CVD method.

次に上記の如く反応槽内で支持基体の表面にCVD法に
よって析出させた頂点を共有するテーパー形状棚素破膜
を有する試料を反応室内より取り出して共有する頂点よ
り各所望の長さに切断したのち、基体を除去して棚素単
独からなるテーパーパィプ構造材を製造するものである
Next, a sample having a tapered shelf-like broken membrane that shares apex, which was deposited on the surface of a supporting substrate by CVD in a reaction chamber as described above, is taken out from the reaction chamber and cut into desired lengths from the shared apex. Thereafter, the base is removed to produce a tapered pipe structural material made of only shelf elements.

本発明によれば外観に優れ、機械的性質の優れた棚素単
独からなるテーパーパイプ構造材を得ることができる。
According to the present invention, it is possible to obtain a tapered pipe structural material consisting of only shelf elements, which has excellent appearance and excellent mechanical properties.

なお、本発明において頂点を共有するテーパ−形状をも
った基体の形成において、研磨転造法に限定した理由と
しては形成表面の粗さが一定の表面粒径に均一化される
ところにある。また他の方法も試みたが、化学的電界エ
ッチング法の場合、形状の再現性が極めて憲く、しかも
形成表面の凹凸が不均一で大きいという欠点がある。ま
た、たたき出し法の場合も、ほぼ同様の理由により好ま
しくない。また本発明において棚素を析出させる方法と
して、CVD法に限定した理由は真空蒸着法では析出速
度が遅くコスト的に問題があるためである。
In the present invention, the reason why the polishing and rolling method is used in forming a base having a tapered shape that shares a common vertex is that the roughness of the formed surface can be made uniform to a constant surface grain size. Other methods have also been tried, but the chemical electric field etching method has the disadvantage that the reproducibility of the shape is extremely poor, and the unevenness of the formed surface is uneven and large. Further, the knock-out method is also not preferred for almost the same reason. Further, in the present invention, the method for precipitating shelf elements is limited to the CVD method because the vacuum deposition method has a slow deposition rate and is problematic in terms of cost.

また上記製造法は減圧下のCVD法であっても、あるい
は常圧下のCVD法であっても有効である。なお、製造
された棚素単独からなるテ−パーパィブ構造材そのもの
を得るために基体を除去する必要があるが、それには王
としてイb学的方法を用いた。
Further, the above manufacturing method is effective regardless of whether it is a CVD method under reduced pressure or a CVD method under normal pressure. Incidentally, in order to obtain the tapered pipe structural material itself consisting of the manufactured shelf element alone, it was necessary to remove the base, and for this purpose, the Ibological method was used.

以下、本発明の実施例について従来法と対比させてのべ
る。
Examples of the present invention will be described below in comparison with conventional methods.

基体積線材としてタンタル線、タングステン線を用意し
、研磨剤は重量比1:1でオイルに混合分散させた粒径
1〆,5r,10〃のものをそれぞれ用意した、それら
用意した材料の各組合せ毎にそれぞれ転造形成用金型に
はさみこみ、負荷加重5k9を加えて、最大径250仏
、最4・径150ム、長さ5側のテーパ−で、頂点を共
有するテーパー形状の基体を各種形成した。
Tantalum wire and tungsten wire were prepared as the base wire materials, and abrasives with particle sizes of 1〆, 5R, and 10〃 mixed and dispersed in oil at a weight ratio of 1:1 were prepared. Each combination was inserted into a rolling mold, and a load of 5k9 was applied to form a tapered base with a maximum diameter of 250mm, a maximum diameter of 4mm, a diameter of 150mm, and a taper on the length 5 side, sharing the vertex. Various types were formed.

このようにして作成した基体は次の通りである。‘1汐
ンタル線から粒径1ムの研磨剤を用いて転造したもの、
■タンタル線から粒径5〆の研磨剤を用いて転造したも
の、‘3汐ンタル線から粒蓬10仏の研磨剤を用いて転
造したもの、‘41タングステン線から粒蓬1仏の研磨
剤を用いて転造したもの、【5汐ングステン線から粒蓬
5rの研磨剤を用いて転造したもの、‘61タングステ
ン線から粒径10山の研磨剤を用いて転造したもの、‘
7’ニオブ線から粒径5仏の研磨剤を用いて転進したも
の、‘81チタン線から粒径5ムの粒径の研磨剤を用い
て転造したもの、‘91モリブデン線から粒径5ムの研
磨剤を用いて転造したもの、00ニッケル線から粒径5
山の研磨剤を用いて転造したもの、(11)タンタル線
から研磨剤を用いずに転造したもの、(12)タングス
テン線から研磨剤を用いずに転造したもの、(13)タ
ンタル線から頂点を共有しないテーパー形状に粒径5〆
の研磨剤を用いて穣造したもの、(14)タンタル緩か
ら化学的エッチング法を用いて作成したもの、(15)
タンタル緩からたたき出し法を用いて作成したものの1
9蚤からなる支持基体を使用した。
The substrate thus produced is as follows. Rolled from 1-Shio inttal wire using an abrasive with a grain size of 1mm,
■Those rolled from tantalum wire using an abrasive with a grain size of 5, those rolled from '3 Shio tantalum wire using an abrasive with a grain size of 10, and those rolled from '41 tungsten wire with a grain size of 1 Buddha. Rolled using an abrasive, [5 tungsten wire rolled using a 5r grain abrasive, '61 tungsten wire rolled using a 10 grain abrasive, '
7' niobium wire rolled using an abrasive with a grain size of 5mm, '81 titanium wire rolled with a 5mm grain abrasive, and '91 molybdenum wire rolled with a grain size of 5mm. 00 nickel wire to particle size 5
(11) Rolled tantalum wire without using an abrasive; (12) Rolled tungsten wire without using an abrasive; (13) Tantalum. (14) A tapered shape that does not share a vertex from the line using an abrasive with a grain size of 5. (14) A chemical etching method made from tantalum, (15)
One made using the tapping method from loose tantalum
A support substrate consisting of 9 fleas was used.

これらをそれぞれ反応糟内に設置し、塩化棚素(BC1
3)と水素(日2)との混合ガスを前者については25
0の‘/分の割合で、また後者については1000の【
/分の割合で供給した。そして支持基体を赤外線加熱に
よって115ぴ0に加熱発熱させて6鼠彰間保持し、支
持基体表面に棚素を20〃析出させた後、これを反応椿
より取り出して共有する頂点より長さ5帆に切断した後
、基体を除去した。上記のようにして得られた各論料に
ついて4奴スパンの両端支持状態にして、中央に一点加
重をかけて、クラックを発生した時の荷重で機械的強度
を評価した。
Each of these was placed in a reaction chamber and
3) and hydrogen (2) and hydrogen (25) for the former.
at a rate of 0'/min, and for the latter at a rate of 1000/min.
was supplied at a rate of /min. Then, the supporting substrate was heated to 115 mm by infrared heating and held for 6 days, and 20 pieces of shelf elements were precipitated on the surface of the supporting substrate. After that, it was taken out from the reaction camellia and the length was 5 mm from the shared vertex. After cutting into the sail, the substrate was removed. Each of the materials obtained as described above was supported at both ends of the 4-strand span, and a load was applied to the center at one point, and the mechanical strength was evaluated based on the load at which a crack occurred.

試料数は各2広本とし、下表にはその平均値を示してい
る。なお、基体を除去し、棚素テーパーパイプ構造材を
得るときの収率についても下表に示した。※1)試料修
に〇印を記したものは本発明によるもの、その他は従来
法である。
The number of samples was 2 sheets each, and the average value is shown in the table below. The table below also shows the yield when removing the base and obtaining the shelf element tapered pipe structural material. *1) Sample modifications marked with a circle are those according to the present invention, and the others are conventional methods.

※2)試料修13以外の試料はすべて頂点を共有するテ
ーパー形状を形成した試料である。
*2) All samples other than Sample No. 13 are samples that have a tapered shape that shares a common vertex.

上表の結果から明らかなように、本発明の方法によれば
、機械的強度および棚素テーパーパィプ構造材の収率が
、従来法による場合と比べて格段に優れていることがわ
かる。
As is clear from the results in the table above, it can be seen that according to the method of the present invention, the mechanical strength and the yield of the shelf element tapered pipe structural material are significantly superior compared to the conventional method.

また、本発明による棚素テーパーパィプ構造材を加工し
て、カートリッジ用カンチレバーとなし、その特性を評
価した。その結果、第3図のように従来公知の材料、例
えばアルミ合金あるいはチタン合金などで欠点とされて
いた周波数特性における、いわゆる中だるみ現象、さら
には4肌HZ以上の高城における平坦性、また、追従性
を左右する過渡特性が数段に向上していた。また歪やマ
イクロクラックのない高弾性率の棚素被膜は機械的部品
としても広い用途に使用できる。
In addition, the shelf element tapered pipe structural material according to the present invention was processed into a cantilever for a cartridge, and its characteristics were evaluated. As a result, as shown in Figure 3, the so-called sagging phenomenon in the frequency characteristics, which has been considered a drawback with conventionally known materials such as aluminum alloys and titanium alloys, as well as flatness at high frequencies of 4 HZ or higher, and tracking. The transient characteristics, which affect performance, were significantly improved. Moreover, the shelving film with high elastic modulus without strain or microcracks can be used in a wide range of applications as mechanical parts.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明における支持基体の製造方法を示す斜視
図、第2図は同支持基体を示す側面図、第3図は本発明
にかかる棚素テーパーパィブ構造材をカートリッジとな
した時の周波数特性を従釆の材料と比較して説明する図
である。 1,2……金型、3……線材、4……支持基体。 第1図 第2図 第3図
Fig. 1 is a perspective view showing the method of manufacturing the supporting base according to the present invention, Fig. 2 is a side view showing the same supporting base, and Fig. 3 is the frequency when the tapered pipe structural material according to the present invention is used as a cartridge. FIG. 3 is a diagram illustrating characteristics in comparison with a subordinate material. 1, 2...Mold, 3...Wire rod, 4...Support base. Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】 1 円柱形状をなした線材を、上下対称をなした一対の
金型にはさみこみ、一定粒径の研磨剤を添加し、しかる
後に一定加重を負荷し、線材に対して垂直方向に前後ス
ライドさせて一定寸法の頂点を共有するテーパー形状を
持った基体を転造形成し、しかるのち、転造された基体
を支持基体となし、上記基体を加熱し、上記基体上に化
学蒸着法(CVD法)によって硼素を形成することを特
徴とする硼素構造材の製造方法。 2 支持基体がタンタル、ニオブ、チタン、タングステ
ン、モリブデン、ニツケルよりなるグループより選ばれ
た一種の金属からなることを特徴とする特許請求の範囲
第1項記載の硼素構造材の製造方法。 3 研磨剤の粒径が1〜10μであることを特徴とする
特許請求の範囲第1項記載の硼素構造材の製造方法。
[Claims] 1. A cylindrical wire rod is inserted into a pair of vertically symmetrical molds, an abrasive of a certain particle size is added thereto, and then a certain load is applied to the wire rod perpendicularly to the wire rod. A tapered base having a common apex of a certain size is rolled by sliding it back and forth in the direction, and then the rolled base is used as a support base, the base is heated, and a chemical is applied onto the base. A method for producing a boron structural material, characterized in that boron is formed by a vapor deposition method (CVD method). 2. The method for producing a boron structural material according to claim 1, wherein the supporting base is made of a metal selected from the group consisting of tantalum, niobium, titanium, tungsten, molybdenum, and nickel. 3. The method for producing a boron structural material according to claim 1, wherein the abrasive has a particle size of 1 to 10 μm.
JP5892981A 1981-04-17 1981-04-17 Manufacturing method of boron structural material Expired JPS6013966B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5892981A JPS6013966B2 (en) 1981-04-17 1981-04-17 Manufacturing method of boron structural material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5892981A JPS6013966B2 (en) 1981-04-17 1981-04-17 Manufacturing method of boron structural material

Publications (2)

Publication Number Publication Date
JPS57175727A JPS57175727A (en) 1982-10-28
JPS6013966B2 true JPS6013966B2 (en) 1985-04-10

Family

ID=13098518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5892981A Expired JPS6013966B2 (en) 1981-04-17 1981-04-17 Manufacturing method of boron structural material

Country Status (1)

Country Link
JP (1) JPS6013966B2 (en)

Also Published As

Publication number Publication date
JPS57175727A (en) 1982-10-28

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