Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS6019603B2 - composite dielectric - Google Patents
[go: Go Back, main page]

JPS6019603B2 - composite dielectric - Google Patents

composite dielectric

Info

Publication number
JPS6019603B2
JPS6019603B2 JP4944582A JP4944582A JPS6019603B2 JP S6019603 B2 JPS6019603 B2 JP S6019603B2 JP 4944582 A JP4944582 A JP 4944582A JP 4944582 A JP4944582 A JP 4944582A JP S6019603 B2 JPS6019603 B2 JP S6019603B2
Authority
JP
Japan
Prior art keywords
dielectric
composite dielectric
composite
ceramic
mgtio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4944582A
Other languages
Japanese (ja)
Other versions
JPS58166605A (en
Inventor
博 田村
純一 佐古
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Daikin Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd, Daikin Kogyo Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP4944582A priority Critical patent/JPS6019603B2/en
Publication of JPS58166605A publication Critical patent/JPS58166605A/en
Publication of JPS6019603B2 publication Critical patent/JPS6019603B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Waveguides (AREA)
  • Inorganic Insulating Materials (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Description

【発明の詳細な説明】 本発明は、複合誘電体に関し、更に詳しくはMgTi0
3−CaTi03系誘電体セラミック粉末と絶縁性高分
子材料とからなるマイクロ波用複合誘電体や微少容量コ
ンデンサー材料に用いることのできる複合誘電体に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a composite dielectric material, and more particularly to a composite dielectric material made of MgTi0
The present invention relates to a composite dielectric that can be used as a microwave composite dielectric or a microcapacitance capacitor material, which is made of a 3-CaTi03-based dielectric ceramic powder and an insulating polymer material.

近年、マイクロ波領域における通信の発達に伴ない、マ
イクロ波回路の集積化が図られている。
In recent years, with the development of communication in the microwave region, efforts have been made to integrate microwave circuits.

従来、集積化用の基板、いわゆるマイクロ波用基板(M
IC基板)には、誘電体材料として四フッ化エチレン樹
脂、ポリスチレン樹脂などの両面に銅張りしたものが用
いられ、この鋼板にエッチング加工などを行なって回路
を形成していた。そして回路構成の一部として樹脂の誘
電率を利用するケースがある。しかしながら本釆樹脂の
誘電率が2〜3であるため、たとえば共振回路を形成す
るような場合、樹脂の誘電率が小さいと導電パターンの
形状を大きくしなければならす、小形化への障害となっ
ていた。したがって、さらに大きな誘電率を有するマイ
クロ波基板の出現が要求されていた。一方、誘電体セラ
ミックのマイクロ波通信機器への応用展開が進み、マイ
クロ波帯で高いQ値を持ち、かつ温度安定性のすぐれた
材料の開発が行われている。
Conventionally, a substrate for integration, a so-called microwave substrate (M
The dielectric material (IC board) used was a dielectric material such as tetrafluoroethylene resin or polystyrene resin coated with copper on both sides, and circuits were formed by etching the steel plate. There are cases where the dielectric constant of resin is used as part of the circuit configuration. However, since the dielectric constant of this resin is 2 to 3, for example, when forming a resonant circuit, if the dielectric constant of the resin is small, the shape of the conductive pattern must be enlarged, which becomes an obstacle to miniaturization. was. Therefore, there has been a demand for a microwave substrate with an even higher dielectric constant. On the other hand, the application of dielectric ceramics to microwave communication equipment is progressing, and materials with high Q values in the microwave band and excellent temperature stability are being developed.

しかしながら、セラミックを穿孔したり、切断したりす
るような加工を施こそうとすると、セラミックがもとも
と硬いため加工が難かしく、また欠けたり、割れさりす
るという欠点がある。したがって、本発明は、樹脂が有
する柔軟性とマイクロ波誘電体セラミックのすぐれた電
気特性を利用した複合誘電体を提供せんとするものであ
る。
However, when attempting to perform processing such as drilling or cutting on ceramic, it is difficult to process because ceramic is inherently hard, and it also has the drawback of chipping and cracking. Therefore, the present invention aims to provide a composite dielectric material that utilizes the flexibility of resin and the excellent electrical properties of microwave dielectric ceramic.

また本発明は、マイクロ波領域で高いQ値を持ち、比誘
電率の温度特性が安定で、比誘電率が−般の高分子材料
にくらべて大きい複合誘電体を提供せんとするものであ
る。
Further, the present invention aims to provide a composite dielectric material that has a high Q value in the microwave region, has stable temperature characteristics of relative permittivity, and has a relative permittivity larger than that of general polymer materials. .

さらに本発明は、マイクロ波誘電体セラミックにくらべ
て柔軟性にすぐれ、加工容易性を有する複合誘電体を提
供せんとするものである。
Furthermore, it is an object of the present invention to provide a composite dielectric material that is more flexible and easier to process than microwave dielectric ceramics.

すなわち、本発明の要旨とするところは、MgTi03
−CaTi03系誘電体セラミック10〜70容量%、
好ましくは30〜5坤容量%および絶縁性高分子材料9
0〜3咳容量%、好ましくは70〜5笹容量%からなる
複合誘電体である。
That is, the gist of the present invention is that MgTi03
-CaTi03-based dielectric ceramic 10-70% by capacity,
Preferably 30-5 kon capacity% and insulating polymeric material 9
It is a composite dielectric material having a capacity of 0 to 3%, preferably 70 to 5%.

本発明の複合譲露体を構成するもののうち、MgTi0
3一CaTi03系材料は、その成分比がMgTi03
80〜100モル%およびCaTi030〜20モル%
のものからなり、7GHzにおけるQが3000〜20
000、比誘電率が17〜27、比誘電率の温度特性が
−100〜十100ppm/00のものである。
Among those constituting the composite object of the present invention, MgTi0
3-CaTi03-based material has a component ratio of MgTi03
80-100 mol% and CaTi030-20 mol%
with a Q of 3000 to 20 at 7GHz.
000, a relative dielectric constant of 17 to 27, and a temperature characteristic of the relative permittivity of -100 to 1100 ppm/00.

このほか、Ti02を添加してさらに比誘電率を上昇さ
せることも許される。また、絶縁性高分子材料としては
、四フッ化エチレンの単独または共重合体などの含フッ
素系重合体が特に好ましいが、その他ポリエチレンある
いはポリオレフィン系重合体のような誘電損の4・さし
、重合体を用いることができる。
In addition, it is also permissible to add Ti02 to further increase the dielectric constant. In addition, as the insulating polymer material, fluorine-containing polymers such as single or copolymers of tetrafluoroethylene are particularly preferable, but other dielectric loss polymers such as polyethylene or polyolefin polymers, Polymers can be used.

これらのうちでは、特に四フツ化エチレンの単独重合体
が好ましい。また使用できる共重合体としては、四フツ
化エチレンとエチレン、プロピレン、6フツ化プロピレ
ン、フッ化ビニル、フツ化ビニリデン、3フッ化エチレ
ンなどとの共重合体を例示できる。謙蟹体セラミックと
絶縁性高分子材料の混合比は、一般に10:90〜70
:30の容量比の範囲から選択されるが、かかる範囲が
好ましい理由は次のとおりである。つまり、誘電体セラ
ミックが1伍容量%未満、絶縁性高分子材料が9咳容量
%を越えると、比誘電率の増加が見られず複合化した効
果が得られなくなる。また誘電体セラミックが7餌容量
%を越え、絶縁性高分子材料が3筋容量%未満になると
、誘電体セラミックの量が多くなるため、絶縁性高分子
材料と混合しても均質な複合誘電体が得られなくなる。
したがって柔軟性がなくなり、加工性も悪くなる。本発
明の複合誘電体を製造するには、前記絶縁性高分子材料
および誘電体セラミックをいずれも粉末状で均一に混合
した上、高分子材料の成形条件下で成形する。
Among these, homopolymers of tetrafluoroethylene are particularly preferred. Examples of copolymers that can be used include copolymers of ethylene tetrafluoride and ethylene, propylene, propylene hexafluoride, vinyl fluoride, vinylidene fluoride, ethylene trifluoride, and the like. The mixing ratio of the crab body ceramic and the insulating polymer material is generally 10:90 to 70.
:30, and the reason why this range is preferable is as follows. In other words, if the dielectric ceramic has a capacity of less than 1.5% and the insulating polymer material has a capacity of more than 9.0%, no increase in the relative dielectric constant is observed and a composite effect cannot be obtained. Furthermore, if the dielectric ceramic exceeds 7% by weight and the insulating polymer material becomes less than 3% by capacity, the amount of dielectric ceramic increases, so even if mixed with the insulating polymer material, a homogeneous composite dielectric You won't be able to get a body.
Therefore, flexibility is lost and workability is also deteriorated. To manufacture the composite dielectric of the present invention, the insulating polymer material and dielectric ceramic are uniformly mixed in powder form, and then molded under polymer material molding conditions.

たとえば、ポリ四フツ化エチレンの場合、混合粉末を約
100〜700k9/地に圧力下に圧縮成形した後、約
330〜420qCの温度で焼成して成形体とする。以
下にこの発明を実施例に従って詳細に説明する。
For example, in the case of polytetrafluoroethylene, the mixed powder is compression molded under pressure to about 100 to 700 k9/kg, and then fired at a temperature of about 330 to 420 qC to form a compact. The present invention will be explained in detail below according to examples.

実施例 MgTiQ95モル%、CaTi035モル%からなる
誘電体セラミック粉末(80メッシュパス)とポリ四フ
ッ化エチレン樹脂粉末を第1畢に示す比率で均一に混合
し、この混合原料を、400k9/地の圧力下で圧縮成
形後、滋0℃の温度で3時間加熱焼成して、直径56肋
、高さ8物岬の円柱状複合誘電体を得た。
Example Dielectric ceramic powder (80 mesh pass) consisting of 95 mol% MgTiQ and 35 mol% CaTi and polytetrafluoroethylene resin powder were mixed uniformly at the ratio shown in the first picture. After compression molding under pressure, it was heated and fired at a temperature of 0° C. for 3 hours to obtain a cylindrical composite dielectric material with a diameter of 56 ribs and a height of 8 capes.

得られた複合誘電体について、娘動法による誘電体共振
器法で8.&Hzにおける比誘電率、Q値を測定し、ま
たIMHzで比誘電率の温度特性を測定した。
The resulting composite dielectric was subjected to 8. dielectric resonator method using the daughter motion method. The relative permittivity and Q value at &Hz were measured, and the temperature characteristics of the relative permittivity were also measured at IMHz.

測定結果は第1表に合わせて示す。第1表第1表中、試
料番号1はこの発明範囲外のものであり、それ以外はす
べてこの発明範囲内のものである。
The measurement results are also shown in Table 1. Table 1 In Table 1, sample number 1 is outside the scope of this invention, and all others are within the scope of this invention.

第1表から明らかなように、本発明による複合誘電体は
マイクロ波で大きな比誘電率を有し、Qも高い値を示す
As is clear from Table 1, the composite dielectric material according to the present invention has a large dielectric constant under microwaves and also exhibits a high Q value.

また比誘電率の温度特性は収pm/。0を中心とした特
性を示し、温度変化に対して安定した特性を有している
In addition, the temperature characteristics of the relative dielectric constant are pm/. It exhibits characteristics centered around 0, and has stable characteristics against temperature changes.

また、本発明にかかる複合誘電体は柔軟性を有しており
、穿孔加工、切削加工が簡単であり、たとえばマイクロ
波用基板として用いた場合表面と裏面との導通処理も簡
単に行えるという利点を有する。
In addition, the composite dielectric material according to the present invention has flexibility and can be easily perforated and cut, and has the advantage that, for example, when used as a microwave substrate, conduction treatment between the front surface and the back surface can be easily performed. has.

Claims (1)

【特許請求の範囲】 1 MgTiO_3−CaTiO_3系誘電体セラミツ
ク10〜70容量%と絶縁性高分子材料90〜30容量
%とからなる複合誘電体。 2 MgTiO_3−CaTiO_3系誘電体セラミツ
クがMgTiO_380〜100モル%およびCaTi
O_30〜20モル%からなる特許請求の範囲第1項記
載の複合誘電体。 3 MgTiO_3−CaTiO_3系誘電体セラミツ
クの7GHzにおけるQが3000〜20000、比誘
電率が17〜27、比誘電率の温度特性が−100〜+
100ppm/℃である特許請求の範囲第1項または第
2項記載の複合誘電体。 4 絶縁性高分子材料が四フツ化エチレンの単独または
共重合体である特許請求の範囲第1項記載の複合誘電体
[Scope of Claims] 1. A composite dielectric consisting of 10-70% by volume of MgTiO_3-CaTiO_3-based dielectric ceramic and 90-30% by volume of insulating polymer material. 2 MgTiO_3-CaTiO_3-based dielectric ceramic contains MgTiO_380 to 100 mol% and CaTi
The composite dielectric material according to claim 1, comprising O_30 to 20 mol%. 3 MgTiO_3-CaTiO_3-based dielectric ceramic has a Q of 3000 to 20000 at 7 GHz, a relative dielectric constant of 17 to 27, and a temperature characteristic of the relative permittivity of -100 to +
The composite dielectric material according to claim 1 or 2, which has a temperature of 100 ppm/°C. 4. The composite dielectric material according to claim 1, wherein the insulating polymer material is a monopolymer or a copolymer of tetrafluoroethylene.
JP4944582A 1982-03-27 1982-03-27 composite dielectric Expired JPS6019603B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4944582A JPS6019603B2 (en) 1982-03-27 1982-03-27 composite dielectric

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4944582A JPS6019603B2 (en) 1982-03-27 1982-03-27 composite dielectric

Publications (2)

Publication Number Publication Date
JPS58166605A JPS58166605A (en) 1983-10-01
JPS6019603B2 true JPS6019603B2 (en) 1985-05-17

Family

ID=12831321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4944582A Expired JPS6019603B2 (en) 1982-03-27 1982-03-27 composite dielectric

Country Status (1)

Country Link
JP (1) JPS6019603B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116207A (en) * 1983-11-28 1985-06-22 Matsushita Electric Ind Co Ltd hybrid circuit

Also Published As

Publication number Publication date
JPS58166605A (en) 1983-10-01

Similar Documents

Publication Publication Date Title
Chiang et al. Polymer composites with high dielectric constant
CA1223722A (en) Foamed polymers having low loss at microwave frequencies
CN100436517C (en) Mixed polytetrafluoroethylene powder, polytetrafluoroethylene porous molded body, method for producing the same, and product for high-frequency signal transmission
EP0423995B1 (en) Low dissipation-factor fluorocarbon resins and cables prepared therefrom
US4987274A (en) Coaxial cable insulation and coaxial cable made therewith
US7732531B2 (en) Molded object process for producing the same product for high-frequency signal transmission and high-frequency transmission cable
KR20070105973A (en) Fluoropolymer coated conductors, coaxial cables using the same, and methods of making them
JPS6019603B2 (en) composite dielectric
JPS58166609A (en) Composite dielectric
JPS6019604B2 (en) composite dielectric
JPH07240117A (en) Composite dielectric and its manufacture
JPS6113324B2 (en)
JPS6113323B2 (en)
JPS6386309A (en) dielectric material
JP2002043841A (en) Voltage controlled oscillator
JPH07272534A (en) Manufacture of compound dielectric
KR102616049B1 (en) wiring board
JPS6386311A (en) Dielectric material
JPS63119108A (en) Dielectric material
JPS6386310A (en) Dielectric material
JPH031261B2 (en)
JPS6357961B2 (en)
JPH05311010A (en) High-permittivity composite substrate
WO2009056154A1 (en) Dielectric resonator
JP2665104B2 (en) Composite dielectric and printed circuit board