JPS6113324B2 - - Google Patents
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- Publication number
- JPS6113324B2 JPS6113324B2 JP4944782A JP4944782A JPS6113324B2 JP S6113324 B2 JPS6113324 B2 JP S6113324B2 JP 4944782 A JP4944782 A JP 4944782A JP 4944782 A JP4944782 A JP 4944782A JP S6113324 B2 JPS6113324 B2 JP S6113324B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- mol
- pbo
- bao
- tio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000000919 ceramic Substances 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims description 21
- 239000003989 dielectric material Substances 0.000 claims description 12
- 239000002861 polymer material Substances 0.000 claims description 12
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 11
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 5
- 150000002602 lanthanoids Chemical class 0.000 claims description 5
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 5
- 229920001577 copolymer Polymers 0.000 claims description 4
- 239000000843 powder Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- -1 polyethylene Polymers 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- DHJQWWDBLHCMLL-UHFFFAOYSA-N 1,3,4,4,8-pentafluoro-5-methyl-3-(trifluoromethyl)oct-1-ene Chemical compound C(CCC(C)C(C(C(F)(F)F)(C=CF)F)(F)F)F DHJQWWDBLHCMLL-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Inorganic Insulating Materials (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Waveguides (AREA)
Description
この発明は、複合誘電体に関し、更に詳しくは
BaO−TiO2−（MeNd）O33/2−PbO系誘電体セ
ラミツク粉末と絶縁性高分子材料とからなるマイ
クロ波用複合誘電体や微少容量コンデンサ−材料
に用いることができる複合誘電体に関するもので
ある。
近年、マイクロ波領域における通信の発達に伴
ない、マイクロ波回路の集積化が図られている。
従来、集積化用の基板、いわゆるマイクロ波用基
板（MIC基板）には、誘電体材料として四フツ化
エチレン樹脂、ポリスチレン樹脂などの両面に銅
張りしたものが用いられ、この銅板にエツチング
加工などを行なつて回路を形成していた。そして
回路構成の一部として樹脂の誘電率を利用するケ
ースがある。しかしながら本来樹脂の誘電率が２
〜３であるため、たとえば共振回路を形成するよ
うな場合、樹脂に誘電率が小さいと導電パターン
の形状を大きくしなければならず、小形化への障
害となつていた。したがつて、さらに大きな誘電
率を有するマイクロ波基板の出現が要求されてい
た。
一方、誘電体セラミツクのマイクロ波通信機器
への応用展開が進み、マイクロ波帯で高いＱ値を
持ち、かつ温度安定性のすぐれた材料の開発が行
われている。しかしながら、セラミツクを穿孔し
たり、切断したりするような加工を施こそうとす
ると、セラミツクがもともと硬いため加工が難か
しく、また欠けたり、割れたりするという欠点が
ある。
したがつて、本発明は樹脂が有する柔軟性とマ
イクロ波誘電体セラミツクのすぐれた電気特性を
利用した複合誘電体を提供せんとするものであ
る。
また本発明は、マイクロ波領域で高いＱ値を持
ち、比誘電率の温度特性が安定で、比誘電率が一
般の高分子材料にくらべて大きい複合誘電体を提
供せんとするものである。
さらに本発明は、マイクロ波誘電体セラミツク
にくらべ柔軟性にすぐれ、加工容易性を有する複
合誘電体を提供せんとするものである。
すなわち、本発明の要旨とするところは、BaO
−TiO2−（MeNd）O33/2−PbO系誘電体セラミ
ツク（ただし、MeはNdを除くランタニド系元素
の少なくとも１種を表わす。）10〜70容量％、好
ましくは30〜50容量％および絶縁性高分子材料90
〜30容量％、好ましくは70〜50容量％からなる複
合誘電体である。
本発明の複合誘電体を構成するもののうち、
BaO−TiO2−（MeNd）Ｏ3/2−PbO系材料は、そ
の成分比がBaO2〜20モル％、TiO240〜70モル
％、（MeNd）Ｏ3/210〜58モル％からなる主成分
に、添加物としてPbOを17重量％以下加えたもの
からなり、7GHzにおけるＱが2000〜5000、比誘
電率が50〜95、比誘電率の温度特性が−30〜＋
150ppm／℃のものである。ただし、MeはNdを
除くランタニド系元素の少なくとも１種のもので
あり、（MenN1-n）Ｏ3/2と表わしたとき、ｍは
0.01〜0.99の値をとる。Ndを除くランタニド系元
素のうち特にCeが好ましい。
また、絶縁性高分子材料としては、四フツ化エ
チレンの単独または共重合体などの含フツ素系重
合体が特に好ましいが、その他、ポリエチレンあ
るいはポリオレフイン系重合体のような誘電損の
小さい重合体を用いることができる。これらのう
ちでは、特に四フツ化エチレンの単独重合体が好
ましい。また使用できる共重合体としては、四フ
ツ化エチレンとエチレン、プロピレン、６フツ化
プロピレン、フツ化ビニル、フツ化ビニリデン、
３フツ化エチレンなどとの共重合体を例示でき
る。
誘電体セラミツクと絶縁性高分子材料の混合比
は、一般に10：90〜70：30の容量比の範囲から選
択されるが、かかる範囲が好ましい理由は次のと
おりである。つまり、誘電体セラミツクが10容量
％未満、絶縁性高分子材料が90容量％を越える
と、比誘電率の増加が見られず複合化した効果が
得られなくなる。また誘電体セラミツクが70容量
％を越え、絶縁性高分子材料が30容量％未満にな
ると、誘電体セラミツクの量が多くなるため、絶
縁性高分子材料と混合しても均質な複合誘電体が
得られなくなる。したがつて柔軟性がなくなり、
加工性も悪くなる。
本発明の複合誘電体を製造するには、前記絶縁
性高分子材料および誘電体セラミツクをいずれも
粉末状で均一に混合した上、高分子材料の成形条
件下で成形する。たとえば、ポリ四フツ化エチレ
ンの場合、混合粉末を約100〜700Kg／cm2の圧力下
に圧縮成形した後、約330〜420℃の温度で焼成し
て成形体とする。
以下にこの発明を実施例に従つて詳細に説明す
る。
実施例 １
BaO10モル％、TiO253モル％、（Ce0.05Nd0.
95）Ｏ3/227モル％からなる主成分にPbOを10重
量％加えた誘電体セラミツク粉末（80メツシユパ
ス）とポリ四フツ化エチレン樹脂粉末を第１表に
示す比率で均一に混合し、この混合原料を400
Kg／cm2の圧力下で圧縮成形後、380℃の温度で３
時間加熱焼成して、直径56mm、高さ80mmの円柱状
複合誘電体を得た。
得られた複合誘電体について、摂動法による誘
電体共振器法で8.5GHzにおける比誘電率、Ｑ値
を測定し、また、1MHzで比誘電率の温度特性を
測定した。測定結果は第１表に合わせて示す。
The present invention relates to a composite dielectric, and more particularly, to a composite dielectric.
Regarding composite dielectrics that can be used for microwave composite dielectrics and microcapacitance capacitor materials consisting of BaO−TiO 2 −(MeNd)O 33/2 −PbO-based dielectric ceramic powder and insulating polymer materials. It is. In recent years, with the development of communication in the microwave region, efforts have been made to integrate microwave circuits.
Conventionally, integration boards, so-called microwave boards (MIC boards), have been made of a dielectric material such as tetrafluoroethylene resin or polystyrene resin with copper clad on both sides. A circuit was formed by doing this. There are cases where the dielectric constant of resin is used as part of the circuit configuration. However, originally the dielectric constant of resin is 2.
3. Therefore, when forming a resonant circuit, for example, if the resin has a small dielectric constant, the shape of the conductive pattern must be made large, which has been an obstacle to miniaturization. Therefore, there has been a demand for a microwave substrate with an even higher dielectric constant. On the other hand, the application of dielectric ceramics to microwave communication equipment is progressing, and materials with high Q values in the microwave band and excellent temperature stability are being developed. However, when attempting to perform processing such as drilling or cutting on ceramic, it is difficult to process because ceramic is inherently hard, and it also has the disadvantage of chipping or cracking. Therefore, it is an object of the present invention to provide a composite dielectric material that utilizes the flexibility of resin and the excellent electrical properties of microwave dielectric ceramic. Further, the present invention aims to provide a composite dielectric material that has a high Q value in the microwave region, stable temperature characteristics of relative permittivity, and has a relative permittivity larger than that of general polymer materials. Furthermore, it is an object of the present invention to provide a composite dielectric material that is more flexible and easier to process than microwave dielectric ceramics. That is, the gist of the present invention is that BaO
-TiO 2 -(MeNd)O 33/2 -PbO dielectric ceramic (Me represents at least one lanthanide element excluding Nd) 10 to 70% by volume, preferably 30 to 50% by volume and Insulating polymer material 90
~30% by volume, preferably 70-50% by volume. Among those constituting the composite dielectric of the present invention,
The BaO-TiO 2 -(MeNd)O 3/2 -PbO-based material has a component ratio of BaO2 to 20 mol%, TiO 2 40 to 70 mol%, and (MeNd)O 3/2 10 to 58 mol%. Consisting of the main component plus 17% by weight or less of PbO as an additive, Q at 7GHz is 2000 to 5000, relative dielectric constant is 50 to 95, and temperature characteristics of relative permittivity are -30 to +
150ppm/℃. However, Me is at least one type of lanthanide element excluding Nd, and when expressed as (Me n N 1-n ) O 3/2 , m is
Takes a value between 0.01 and 0.99. Among the lanthanide elements other than Nd, Ce is particularly preferred. In addition, as the insulating polymer material, fluorine-containing polymers such as single or copolymers of tetrafluoroethylene are particularly preferred, but other polymers with low dielectric loss such as polyethylene or polyolefin polymers are also preferred. can be used. Among these, homopolymers of tetrafluoroethylene are particularly preferred. Copolymers that can be used include tetrafluoroethylene and ethylene, propylene, hexafluoropropylene, vinyl fluoride, vinylidene fluoride,
Examples include copolymers with trifluoroethylene and the like. The mixing ratio of the dielectric ceramic and the insulating polymer material is generally selected from a range of capacitance ratios of 10:90 to 70:30, and the reason why such a range is preferable is as follows. In other words, if the dielectric ceramic is less than 10% by volume and the insulating polymer material is more than 90% by volume, no increase in relative dielectric constant will be observed and no composite effect will be obtained. Furthermore, if the dielectric ceramic exceeds 70% by volume and the insulating polymer material becomes less than 30% by volume, the amount of dielectric ceramic increases, and even if mixed with the insulating polymer material, a homogeneous composite dielectric will not be obtained. You won't be able to get it. Therefore, there is no flexibility,
Workability also deteriorates. To manufacture the composite dielectric of the present invention, the insulating polymer material and the dielectric ceramic are uniformly mixed in powder form, and then molded under conditions for molding the polymer material. For example, in the case of polytetrafluoroethylene, a mixed powder is compression molded under a pressure of about 100 to 700 kg/cm 2 and then fired at a temperature of about 330 to 420° C. to form a molded body. The present invention will be explained in detail below based on examples. Example 1 BaO 10 mol%, TiO 2 53 mol%, (Ce 0 . 05 Nd 0 .
95 ) A dielectric ceramic powder (80 mesh passes) consisting of 27 mol% O 3/2 as a main component plus 10% by weight of PbO and a polytetrafluoroethylene resin powder were uniformly mixed in the ratio shown in Table 1. 400% of this mixed raw material
After compression molding under the pressure of Kg/ cm2 , the temperature of 380℃
A cylindrical composite dielectric material having a diameter of 56 mm and a height of 80 mm was obtained by heating and baking for a period of time. Regarding the obtained composite dielectric, the dielectric constant and Q value at 8.5 GHz were measured using the dielectric resonator method using the perturbation method, and the temperature characteristics of the relative permittivity were also measured at 1 MHz. The measurement results are also shown in Table 1.
【表】
第１表中、試料番号１はこの発明範囲外のもの
であり、それ以外はすべてこの発明範囲内のもの
である。
第１表から明らかなように、本発明による複合
誘電体はマイクロ波で大きな比誘電率を有し、Ｑ
も高い値を示す。また比誘電率の温度特性は
0ppm／℃を中心とした特性を示し、温度変化に
対して安定した特性を有している。
また、本発明にかかる複合誘電体は柔軟性を有
しており、穿孔加工、切削加工が簡単であり、た
とえばマイクロ波用基板として用いた場合表面と
裏面との導通処理も簡単に行えるという利点を有
する。また、上記の特性を利用して、本発明の複
合誘電体は、微少容量コンデンサ−材料に用いる
こともできる。
実施例 ２
BaO11モル％、TiO259モル％、
（Pr0.15Nd0.85）Ｏ3/230モル％からなる主成分
にPbOを10重量％加えた誘電体セラミツク粉末
（80メツシユパス）とポリ四フツ化エチレン樹脂
粉末を第２表に示す比率で均一に混合し、実施例
１と同様に処理して円柱状複合誘電体を得た。
得られた複合誘電体につき、実施例１と同様の
方法により測定した。その結果を第２表に合わせ
て示す。[Table] In Table 1, sample number 1 is outside the scope of this invention, and all others are within the scope of this invention. As is clear from Table 1, the composite dielectric material according to the present invention has a large dielectric constant in microwaves, and has a Q
also shows high values. Also, the temperature characteristics of the relative permittivity are
It exhibits characteristics centered around 0ppm/℃, and has stable characteristics against temperature changes. In addition, the composite dielectric material according to the present invention has flexibility and can be easily perforated and cut, and has the advantage that, for example, when used as a microwave substrate, conduction treatment between the front surface and the back surface can be easily performed. has. Further, by utilizing the above characteristics, the composite dielectric of the present invention can also be used as a material for a microcapacitance capacitor. Example 2 BaO 11 mol%, TiO 2 59 mol%,
(Pr 0.15 Nd 0.85 ) Dielectric ceramic powder (80 mesh passes) consisting of 30 mol% O 3/2 as a main component plus 10% by weight of PbO and polytetrafluoroethylene resin powder were uniformly mixed in the ratio shown in Table 2. and treated in the same manner as in Example 1 to obtain a cylindrical composite dielectric. The obtained composite dielectric was measured in the same manner as in Example 1. The results are also shown in Table 2.
【表】
実施例 ３
次に示す組成の誘電体セラミツク粉末（80メツ
シユパス）とポリ四フツ化エチレン樹脂を第３表
に示す比率で均一に混合し、実施例１と同様に処
理すると共に実施例１と同様の方法により測定し
た。その結果を第２表に合わせて示す。
誘電体セラミツク粉末−BaO11モル％、
TiO259モル％、（Sm0.15Nd0.85）Ｏ3/230モル
％からなる主成分にPbOを10重量％加えたもの[Table] Example 3 Dielectric ceramic powder (80 mesh passes) having the composition shown below and polytetrafluoroethylene resin were mixed uniformly in the ratio shown in Table 3, and treated in the same manner as in Example 1. It was measured by the same method as in 1. The results are also shown in Table 2. Dielectric ceramic powder - BaO 11 mol%,
Main components consisting of 59 mol% TiO 2 and 30 mol% (Sm 0.15 Nd 0.85 )O 3/2 with 10% by weight of PbO added.
【表】
実施例 ４
次に示す組成の誘電体セラミツク粉末（80メツ
シユパス）とポリ四フツ化エチレン樹脂を第４表
に示す比率で均一に混合し、実施例１と同様に処
理するとともに、実施例１と同様の方法により測
定した。その結果を第４表に合わせて示す。
誘電体セラミツク粉末−BaO11モル％、
TiO259モル％、（La0.08Ce0.07Nd0.85）Ｏ3/2
30モル％からなる主成分にPbOを10重量％加えた
もの[Table] Example 4 Dielectric ceramic powder (80 mesh passes) having the composition shown below and polytetrafluoroethylene resin were uniformly mixed in the ratio shown in Table 4, treated in the same manner as in Example 1, and carried out. It was measured by the same method as in Example 1. The results are also shown in Table 4. Dielectric ceramic powder - BaO 11 mol%,
TiO2 59 mol%, (La 0.08 Ce 0.07 Nd 0.85 )O 3/2
10% by weight of PbO added to the main component consisting of 30% by mole
【表】
なお、その他のランタニド系元素についても同
程度の特性が得られる。[Table] Similar characteristics can be obtained for other lanthanide elements.
Claims (1)
セラミツク（ただし、MeはNdを除くランタニド
系元素の少なくとも１種を表わす。）10〜70容量
％と絶縁性高分子材料90〜30容量％とからなる複
合誘電体。 ２ BaO−TiO2−（MeNd）O33/2PbO系誘電体
セラミツクがBaO2〜20モル％、TiO240〜70モル
％ならびに（MeNd）Ｏ3/210〜58モル％の主成
分100〜83重量％およびPbO0〜17重量％からなる
特許請求の範囲第１項記載の複合誘電体。 ３ BaO−TiO2−（MeNd）O33/2−PbO系誘電
体セラミツクの7GHzにおけるＱが2000〜5000、
比誘電率が50〜95、比誘電率の温度特性が−30〜
＋150ppm／℃である特許請求の範囲第１項また
は第２記載の複合誘電体。 ４ 絶縁性高分子材料が四フツ化エチレンの単独
または共重合体である特許請求の範囲第１項記載
の複合誘電体。[Claims] 1 BaO-TiO 2 -(MeNd)O 3/2 -PbO-based dielectric ceramic (Me represents at least one lanthanide element excluding Nd) with 10 to 70% by volume. Composite dielectric material consisting of 90-30% capacitance of insulating polymer material. 2 BaO-TiO 2 -(MeNd)O 33/2 PbO-based dielectric ceramic has main components of BaO 2 to 20 mol%, TiO 2 40 to 70 mol%, and (MeNd)O 3/2 10 to 58 mol% 100 83% by weight and 0 to 17% by weight of PbO. 3 Q of BaO−TiO 2 −(MeNd)O 33/2 −PbO dielectric ceramic at 7 GHz is 2000 to 5000,
The relative permittivity is 50 to 95, and the temperature characteristic of the relative permittivity is -30 to
The composite dielectric material according to claim 1 or 2, which has a temperature of +150 ppm/°C. 4. The composite dielectric material according to claim 1, wherein the insulating polymer material is a monopolymer or a copolymer of tetrafluoroethylene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4944782A JPS58166607A (en) | 1982-03-27 | 1982-03-27 | Composite dielectric |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4944782A JPS58166607A (en) | 1982-03-27 | 1982-03-27 | Composite dielectric |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58166607A JPS58166607A (en) | 1983-10-01 |
| JPS6113324B2 true JPS6113324B2 (en) | 1986-04-12 |
Family
ID=12831381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4944782A Granted JPS58166607A (en) | 1982-03-27 | 1982-03-27 | Composite dielectric |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58166607A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7374704B2 (en) * | 2001-07-27 | 2008-05-20 | Tdk Corporation | Method of producing spherical oxide powder |
-
1982
- 1982-03-27 JP JP4944782A patent/JPS58166607A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58166607A (en) | 1983-10-01 |
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