JPS6022482B2 - Manufacturing method of oxide semiconductor for thermistor - Google Patents
Manufacturing method of oxide semiconductor for thermistorInfo
- Publication number
- JPS6022482B2 JPS6022482B2 JP4937280A JP4937280A JPS6022482B2 JP S6022482 B2 JPS6022482 B2 JP S6022482B2 JP 4937280 A JP4937280 A JP 4937280A JP 4937280 A JP4937280 A JP 4937280A JP S6022482 B2 JPS6022482 B2 JP S6022482B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- copper
- manufacturing
- oxide semiconductor
- manganese
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明は、クロムを固溶させたマンガンーニツケルスピ
ネルに銅を容易にドーピングし、特性範囲の広いサーミ
ス夕を供給する事を特徴とした負の抵抗温度係数を有す
るサーミスタ用酸化物半導体の製造方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a thermistor with a negative temperature coefficient of resistance characterized by easily doping copper into manganese nickel spinel containing chromium as a solid solution and providing a thermistor with a wide range of properties. The present invention relates to a method of manufacturing an oxide semiconductor for a thermistor.
従来、負の抵抗温度係数を有する市販の汎用サーミスタ
の製造方法は、他のセラミックスの製造工程と同様、目
的組成の酸化物を配合し、これを湿式混合・仮競・湿式
粉砕・造粒・成形・焼成という工程を経るのが一般的で
ある。Conventionally, the manufacturing method for commercially available general-purpose thermistors with a negative temperature coefficient of resistance is similar to the manufacturing process of other ceramics, in which oxides with the desired composition are blended, and this is mixed, mixed, mixed, wet-pulverized, granulated, etc. It is common to go through a process of molding and firing.
また、酸化マンガン・酸化ニッケル・酸化鋼の3成分か
らなるサーミスタ用酸化物組成は既に広く知られ〔(株
)日立製作所 中央研究所創立二十周年記念論文集、P
30〜46、昭和37年〕、これに酸化クロムを加えた
4成分系については本件出願人より先に提案されている
。In addition, the oxide composition for thermistors, which consists of three components of manganese oxide, nickel oxide, and oxidized steel, is already widely known [Hitachi, Ltd. Central Research Laboratory 20th Anniversary Collection, p.
30-46, 1960], and a four-component system in which chromium oxide was added thereto was proposed earlier by the present applicant.
本発明は、上記マンガン・ニッケル・クロムおよび銅の
4成分系サーミスタの製造方法で、クロム固溶マンガン
ーニツケルスピネル素子を銅−ボリカルボン酸鍵塩溶液
に含浸させることにより、銅をドーピングさせてマンガ
ン、ニッケル、クロムおよび銅の4成分系サーミスタを
得ることを特徴とする。The present invention is a method for manufacturing the above four-component thermistor of manganese, nickel, chromium, and copper, in which a chromium solid solution manganese nickel spinel element is impregnated with a copper-bolycarboxylic acid key salt solution, thereby doping copper with manganese. The present invention is characterized by obtaining a four-component thermistor of nickel, chromium, and copper.
以下、実施例を挙げて本発明を説明する。The present invention will be explained below with reference to Examples.
市販の原料M芯03,Ni0およびCr203をMh:
Ni:Cr=80:17.5:2.5原子%になるよう
配合し、これをボールミルで2畑時間混合し、このスラ
リ−を乾燥後800qoで仮擁し、さらにボールミルで
粉砕・乾燥を行い、造粒・成形工程を経て、成形体を得
る。Commercially available raw materials M core 03, Ni0 and Cr203 were used as Mh:
Ni:Cr=80:17.5:2.5 atomic% was mixed, mixed in a ball mill for 2 hours, dried, temporarily held at 800 qo, and further ground and dried in a ball mill. , a molded body is obtained through a granulation and molding process.
この成形体を800〜100ぴ0の低温で焼成し非常に
多孔質な素子を得る。この素子を銅−エチレンジアミン
四酢酸溶液(以下EDTAと略記)に含浸させた後20
0℃で乾燥後、1200℃で2時間空気中で焼成した。
ここで、銅−EDTN溶液の濃度あるし、は浸簿時間を
変えることによりドーピング鋼含有量を変化させること
ができる。すなわち、IM溶液を用いて1の砂浸潰した
ものの最終組成比はMn:Ni:Cu:Cr:79.6
:17.4:0.5:2.5原子%,8 M鋼−EDT
A溶液を用いて1の砂浸潰したものは、Mm:Ni:C
u:Cr=78.2:17.1:2.3:2.4原子%
であった。従釆のように配合時に組成が決定されている
場合には、多様な特性範囲をカバーするのは機能的では
ない。すなわち、一特性一組成比と限定される。ところ
が本発明の製造方法を用いれば、基本的なクロム固溶マ
ンガンーニッケルスピネルを製造しておけば、素子特性
の要望に対して、容易に広範囲に対処することができる
点で産業上の効果は大きい。特に、マンガンとニッケル
は全組成でスピネルを構成し安定であり、クロムを固溶
することにより高温負荷特性(DCIOV負荷、150
午0中)にも優れ、さらに銅をドーピングする事により
特性範囲の広い、マンガンーニツケルークロム−銅系組
成の特徴を容易に得ることができるのも大きな利点であ
る。また、請求範囲の中で限定したサーミスタ組成の限
定理由は、既に市販されている汎用サーミスタの特性値
(比抵抗100肌〜IMO肌,B定数は100ぴKから
60000Kの範囲)からくるものである。This molded body is fired at a low temperature of 800 to 100 mm to obtain a highly porous element. After impregnating this element with a copper-ethylenediaminetetraacetic acid solution (hereinafter abbreviated as EDTA),
After drying at 0°C, it was fired in air at 1200°C for 2 hours.
Here, the doped steel content can be changed by changing the concentration of the copper-EDTN solution and the immersion time. That is, the final composition ratio of 1 sand immersed using IM solution is Mn:Ni:Cu:Cr:79.6
:17.4:0.5:2.5 atomic%, 8M steel-EDT
The sand soaked product of 1 using solution A is Mm:Ni:C
u:Cr=78.2:17.1:2.3:2.4 atomic%
Met. In cases where the composition is determined at the time of compounding, as in the case of a dependent product, it is not functional to cover a diverse range of properties. In other words, it is limited to one property and one composition ratio. However, if the manufacturing method of the present invention is used to manufacture basic chromium solid solution manganese-nickel spinel, it is industrially effective in that it is possible to easily meet a wide range of device characteristics requirements. is big. In particular, manganese and nickel constitute spinel in all compositions and are stable, and by solid solution of chromium, high temperature load characteristics (DCIOV load, 150
It is also a great advantage that by doping with copper, it is possible to easily obtain the characteristics of a manganese-nickel-chromium-copper composition with a wide range of properties. Furthermore, the reason for limiting the thermistor composition in the scope of claims is due to the characteristic values of general-purpose thermistors that are already commercially available (specific resistance 100 skin to IMO skin, B constant in the range 100 pK to 60000 K). be.
さらに、含浸用溶液として銅−ポリカルボン酸鍔塩に限
定するのは、金属とポリカルボン酸との篭形成能力が大
きく容易に置換反応をおこす事と、溶液pHが無機塩の
ように強酸性でなく素子を溶解せず中性での溶解度が大
きい事、さらに焼成途中で有機酸はC02およびN02
として分解する利点を持つ事による。Furthermore, the impregnation solution is limited to copper-polycarboxylic acid salt because the metal and polycarboxylic acid have a large cage-forming ability and easily cause a substitution reaction, and the solution pH is strongly acidic like inorganic salts. In addition, the organic acid does not dissolve the element and has high solubility in neutral conditions.
This is because it has the advantage of being decomposed as
・以上のように本発明は構成されているものであり、特
性範囲の広いサーミスタを容易に提供する事ができ、そ
の産業性は大なるものである。- The present invention is configured as described above, and it is possible to easily provide a thermistor with a wide range of characteristics, and its industrial efficiency is great.
Claims (1)
マンガン94.6〜30原子%、ニツケル5〜30原子
%、銅0.1〜15原子%およびクロム0.3〜40原
子%の4種を合計100原子%含有するサーミスタ用酸
化物半導体を得るために、マンガン、ニツケルおよびク
ロム成分系素子を銅−ポリカルボン酸溶液に含浸させた
後、乾燥、焼成させ銅をドーピングする事を特徴とする
サーミスタ用酸化物半導体の製造方法。1. In a sintered mixture of metal oxides, the metal elements are 94.6 to 30 at.% of manganese, 5 to 30 at.% of nickel, 0.1 to 15 at.% of copper, and 0.3 to 40 at.% of chromium. In order to obtain an oxide semiconductor for a thermistor containing a total of 100 atomic percent of seeds, the device is characterized by impregnating manganese, nickel, and chromium component-based elements in a copper-polycarboxylic acid solution, then drying and firing them to dope them with copper. A method for manufacturing an oxide semiconductor for a thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4937280A JPS6022482B2 (en) | 1980-04-14 | 1980-04-14 | Manufacturing method of oxide semiconductor for thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4937280A JPS6022482B2 (en) | 1980-04-14 | 1980-04-14 | Manufacturing method of oxide semiconductor for thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56146203A JPS56146203A (en) | 1981-11-13 |
| JPS6022482B2 true JPS6022482B2 (en) | 1985-06-03 |
Family
ID=12829192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4937280A Expired JPS6022482B2 (en) | 1980-04-14 | 1980-04-14 | Manufacturing method of oxide semiconductor for thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6022482B2 (en) |
-
1980
- 1980-04-14 JP JP4937280A patent/JPS6022482B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56146203A (en) | 1981-11-13 |
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