JPS6041014B2 - Manufacturing method of oxide semiconductor for thermistor - Google Patents
Manufacturing method of oxide semiconductor for thermistorInfo
- Publication number
- JPS6041014B2 JPS6041014B2 JP55014551A JP1455180A JPS6041014B2 JP S6041014 B2 JPS6041014 B2 JP S6041014B2 JP 55014551 A JP55014551 A JP 55014551A JP 1455180 A JP1455180 A JP 1455180A JP S6041014 B2 JPS6041014 B2 JP S6041014B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- copper
- oxide semiconductor
- manufacturing
- manganese
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
【発明の詳細な説明】
本発明は、マンガンーニツケルスピネルに銅を容易にド
ーピングし、特性範囲の広いサーミスタを供給する事を
特徴とした負の抵抗温度係数を有するサーミスタ用酸化
物半導体の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to manufacturing an oxide semiconductor for a thermistor having a negative temperature coefficient of resistance, which is characterized by easily doping manganese nickel spinel with copper and providing a thermistor with a wide range of characteristics. It is about the method.
従来、負の抵抗温度係数を有する市販の汎用サーミスタ
の製造方法は、他のセラミックスの製造工程と同様、目
的組成の酸化物を配合し、これを湿式混合・仮競・湿式
粉砕・造粒・成形・焼成という工程を経るのが一般的で
ある。Conventionally, the manufacturing method for commercially available general-purpose thermistors with a negative temperature coefficient of resistance is similar to the manufacturing process of other ceramics, in which oxides with the desired composition are blended, and this is mixed, mixed, mixed, wet-pulverized, granulated, etc. It is common to go through a process of molding and firing.
また、酸化マンガン、酸化ニッケル、酸化鋼の３成分か
らなるサーミスタ用酸化物組成は、既に広く知られてい
る（日立製作所■、中央研究所創立二十周年記念論文集
、ｐ３０〜４０昭和３７年）。In addition, the oxide composition for thermistors, which consists of three components of manganese oxide, nickel oxide, and oxidized steel, is already widely known (Hitachi, Ltd., Collection of papers commemorating the 20th anniversary of the founding of the Central Research Institute, p. 30-40, 1963). ).
本発明は、上記マンガン、ニッケルおよび銅の３成分系
サーミスタの製造方法で、マンガンーニッケルスピネル
素子に銅−有機酸錯塩溶液を含浸させることによりドー
ピングさせて得る事を特徴とする。以下、本発明を実施
例を挙げて説明する。The present invention is a method for producing the above three-component thermistor of manganese, nickel, and copper, characterized in that it is obtained by doping a manganese-nickel spinel element by impregnating it with a copper-organic acid complex solution. Hereinafter, the present invention will be explained by giving examples.
市販の原料ＭｎＣ０３およびＮｉ○をＭｎ：Ｎｉ＝８２
．５：１７．５原子％になるよう配合し、これをボール
ミルで混合し、このスラリーを乾燥後８００ｑｏで仮競
し、さらにボールミルで粉砕・乾燥を行い、造粒・成形
工程を経て、成形体を得る。Commercially available raw materials MnC03 and Ni○ were mixed with Mn:Ni=82
．． 5:17.5 atomic%, mixed in a ball mill, dried this slurry, preheated at 800 qo, further crushed and dried in a ball mill, went through the granulation and molding process, and made a molded object. get.
この成形体を８００〜９５０００の低温で焼成し、非常
に多孔質な素子を得る。この素子を銅−ＥＤＴＮ溶液に
含浸させた後、２００℃で乾燥後、１１００００で２時
間空気中で焼成した。これで、銅−ＥＤＴＡ（エチレン
ジアミン４酢酸）溶液の濃度あるし、は浸渡時間を変え
ることにより、ドーピング鋼含有量を変化させることが
できる。ＩＭ銅−ＥＤＴＡ溶液を用いて１０秒浸潰した
ものの最終組成比は、Ｍｎ：Ｎｉ：Ｃｕ＝８１．９：１
７．４：０．７原子％、８Ｍ銅−ＥＤＴＡ溶液を用いて
１０秒浸潰したものはＭｎ：Ｎｉ：Ｃｕ＝８０．３：１
７．０：２．７原子％であった。ここで、従来のように
配合時に組成が決定されている場合には、多様な特性範
囲をカバーするのは機械的ではない。This molded body is fired at a low temperature of 800 to 95,000 ℃ to obtain a highly porous element. This element was impregnated with a copper-EDTN solution, dried at 200°C, and then fired in air at 110,000°C for 2 hours. The doped steel content can now be varied by varying the concentration of the copper-EDTA (ethylenediaminetetraacetic acid) solution and the soaking time. The final composition ratio of the product soaked for 10 seconds using IM copper-EDTA solution is Mn:Ni:Cu=81.9:1
7.4:0.7 at%, 8M copper-EDTA solution soaked for 10 seconds is Mn:Ni:Cu=80.3:1
7.0:2.7 at%. Here, when the composition is determined at the time of compounding as in the past, it is not mechanically possible to cover a diverse range of properties.
即ち、一特性、一組成比と限定される。ところが、本発
明の製造方法を用いれば、基本的なマンガンーニツケル
スピネルを製造しておけば、素子特性の要望に対して容
易に広範囲に対処することができる点で産業上の効果は
大きい。特に、マンガンとニッケルは、全組成比でスピ
ネルを構成し安定であり、これに銅をドーピングする事
により、特性範囲の広いマンガンーニッケルー鋼系組成
の特徴を容易に得ることも大きな利点である。また、請
求の範囲の中で限定したサーミスタ組成の限定理由は、
既に市販されている汎用サーミスタの特性値（比抵抗１
００・仇〜ＩＭＯ・抑、Ｂ定数は１００ぴＫ〜６００び
Ｋの範囲）からくるものである。That is, it is limited to one characteristic and one composition ratio. However, the manufacturing method of the present invention has a great industrial effect in that once a basic manganese nickel spinel is manufactured, it is possible to easily meet a wide range of demands for device characteristics. In particular, manganese and nickel constitute spinel in all composition ratios and are stable, and by doping this with copper, it is a great advantage that the characteristics of a manganese-nickel steel composition with a wide range of properties can be easily obtained. be. In addition, the reason for limiting the thermistor composition within the scope of the claims is as follows:
Characteristic values of general-purpose thermistors already on the market (specific resistance 1
The B constant is in the range of 100 to 600 K).
さらに、含浸用溶液として銅−有機酸鉛塩に限定するの
は、金属と有機酸との鍔形成能力が大きく容易に置換方
法におこす事、溶液ｐＨが無機塩のように強酸性でなく
素子を溶解しない事、さらに焼成途中により有機酸はＮ
０２およびＣ０２として分解する利点を持つ事による。
以上のように本発明の製造方法は、マンガン−ニッケル
スピネルに銅を容易にドーピングし、特性範囲の広い負
の抵抗温度係数を有するサーミスタを容易に得る事がで
きる他、上述したような種々の利点を有するものであり
、その産業性は大なるものである。Furthermore, the impregnation solution is limited to copper-organic acid lead salt because it has a great ability to form a ridge between the metal and organic acid and can easily be used in the replacement method, and the solution pH is not strongly acidic like inorganic salts and is suitable for devices. The organic acid does not dissolve N, and also during baking, the organic acid
This is because it has the advantage of being decomposed as 02 and C02.
As described above, the manufacturing method of the present invention can easily dope manganese-nickel spinel with copper and easily obtain a thermistor having a negative temperature coefficient of resistance with a wide range of characteristics. It has advantages and its industrial potential is great.
Claims (1)
マンガン９４．９〜５５原子％、ニツケル５〜２５原子
％、銅０．１〜２０原子％の３種を合計１００原子％含
有するサーミスタ用酸化物半導体を得るために、マンガ
ンおよびニツケル２成分系素子に銅−有機酸錯塩溶液を
含浸させた後、乾燥、焼成させ、銅をドーピングする事
を特徴とするサーミスタ用酸化物半導体の製造方法。1. A thermistor in which a sintered mixture of metal oxides contains a total of 100 at% of three metal elements: 94.9 to 55 at% of manganese, 5 to 25 at% of nickel, and 0.1 to 20 at% of copper. Production of an oxide semiconductor for a thermistor, characterized in that a manganese and nickel two-component element is impregnated with a copper-organic acid complex solution, dried, fired, and doped with copper in order to obtain an oxide semiconductor for thermistor. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55014551A JPS6041014B2 (en) | 1980-02-07 | 1980-02-07 | Manufacturing method of oxide semiconductor for thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55014551A JPS6041014B2 (en) | 1980-02-07 | 1980-02-07 | Manufacturing method of oxide semiconductor for thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56114859A JPS56114859A (en) | 1981-09-09 |
| JPS6041014B2 true JPS6041014B2 (en) | 1985-09-13 |
Family
ID=11864280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55014551A Expired JPS6041014B2 (en) | 1980-02-07 | 1980-02-07 | Manufacturing method of oxide semiconductor for thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6041014B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019189668A1 (en) | 2018-03-30 | 2019-10-03 | ダイキン工業株式会社 | Refrigerant pipe, heat exchanger, and method for manufacturing refigerant pipe |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930005249B1 (en) * | 1990-08-16 | 1993-06-17 | 한국과학기술연구원 | Metal Oxide Thermistor Material |
| DE102010024863B4 (en) | 2010-06-24 | 2012-03-08 | Epcos Ag | Non-cobalt NTC ceramic, process for making a cobalt-free NTC ceramic and its use |
-
1980
- 1980-02-07 JP JP55014551A patent/JPS6041014B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019189668A1 (en) | 2018-03-30 | 2019-10-03 | ダイキン工業株式会社 | Refrigerant pipe, heat exchanger, and method for manufacturing refigerant pipe |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56114859A (en) | 1981-09-09 |
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