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JPS6023430B2 - magnetic bubble memory device - Google Patents
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JPS6023430B2 - magnetic bubble memory device - Google Patents

magnetic bubble memory device

Info

Publication number
JPS6023430B2
JPS6023430B2 JP52049962A JP4996277A JPS6023430B2 JP S6023430 B2 JPS6023430 B2 JP S6023430B2 JP 52049962 A JP52049962 A JP 52049962A JP 4996277 A JP4996277 A JP 4996277A JP S6023430 B2 JPS6023430 B2 JP S6023430B2
Authority
JP
Japan
Prior art keywords
bubble memory
magnetic bubble
output signal
memory device
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52049962A
Other languages
Japanese (ja)
Other versions
JPS53136443A (en
Inventor
庄治 吉本
利男 二見
博文 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52049962A priority Critical patent/JPS6023430B2/en
Publication of JPS53136443A publication Critical patent/JPS53136443A/en
Publication of JPS6023430B2 publication Critical patent/JPS6023430B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は磁気バブルメモリデバイス、特に静電結合雑音
を低減させた磁気バブルメモリデバイスに関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic bubble memory device, and more particularly to a magnetic bubble memory device with reduced capacitive coupling noise.

一般に、磁気バブルメモリデバイスは、磁性薄膜および
この磁性薄膜上に形成された軟強磁性体薄膜のパタンよ
りなる磁気バブルメモリチップと、上記チップと外部回
路間との信号伝搬を行なうリード線と、上記チップに対
して水平な回転磁界を与えるコイルブロックと、上記チ
ップに対して垂直なバイアス磁界を与える磁石ブロック
とから主に構成されており、上記軟強磁性体薄膜のパタ
ンに磁気バブルを発生、転送および分割させることによ
って所望の情報を書込み、記憶、議出しを行なっている
Generally, a magnetic bubble memory device includes a magnetic bubble memory chip consisting of a magnetic thin film and a pattern of a soft ferromagnetic thin film formed on the magnetic thin film, and lead wires for transmitting signals between the chip and an external circuit. It mainly consists of a coil block that applies a horizontal rotating magnetic field to the chip, and a magnet block that applies a bias magnetic field perpendicular to the chip, and generates magnetic bubbles in the pattern of the soft ferromagnetic thin film. , transfer, and divide the desired information to write, store, and issue information.

第1図a,bは従来の磁気バブルメモリデバイスの一例
を示す要部破砕平面図、そのA−A′断面図である。
FIGS. 1a and 1b are a fragmentary plan view of a main part showing an example of a conventional magnetic bubble memory device, and a sectional view thereof taken along line A-A'.

同図において、1はセラミックなどによって形成された
絶縁基板であり、この絶縁基板1のほぼ中央部には、磁
気バブルメモリ素子2が埋設して固定配置されている。
そして、この磁気バブルメモリ素子2内の図示しない磁
気バブル検出器の出力信号は、上記絶縁基板1上に導電
部材を印刷塗布などの方法によって被着形成された配線
パタンからなる出力信号配線3a,3bを介して絶縁基
板1の端部に設けられた出力信号端子4a,4bにそれ
ぞれ接続されている。また、上記磁気バブルメモリ素子
2が収納された絶縁基板1は、その外周面側にそれぞれ
×軸万向にXコイル5aおよびY軸方向にYコイル5b
が互いに直交して巻回され、上記磁気バブルメモリ素子
2に回転磁界を供給している。このように構成された磁
気バブルメモリデバイスにおいて、磁気バブルメモリ素
子2内の磁気バブル検出器によって検出された微小な磁
気バブル検出信号は、出力信号配線3a,3bおよび出
力端子4a,4bを介して図示しない外部の差動増幅器
に供給され、増幅されるとともに、検出信号の蓋信号に
よって約4mVの磁気バブルメモリ出力信号を得ている
In the figure, reference numeral 1 denotes an insulating substrate made of ceramic or the like, and a magnetic bubble memory element 2 is embedded and fixed approximately in the center of the insulating substrate 1.
Output signals from a magnetic bubble detector (not shown) in the magnetic bubble memory element 2 are transmitted through output signal wiring 3a, which is formed by a wiring pattern formed by coating a conductive member on the insulating substrate 1 by a method such as printing and coating. The terminals 3b are connected to output signal terminals 4a and 4b provided at the ends of the insulating substrate 1, respectively. Further, the insulating substrate 1 in which the magnetic bubble memory element 2 is housed has an X coil 5a in all directions of the x-axis and a Y coil 5b in the Y-axis direction on its outer peripheral surface side.
are wound perpendicularly to each other and supply a rotating magnetic field to the magnetic bubble memory element 2. In the magnetic bubble memory device configured in this way, minute magnetic bubble detection signals detected by the magnetic bubble detector in the magnetic bubble memory element 2 are transmitted via the output signal wirings 3a, 3b and the output terminals 4a, 4b. The signal is supplied to an external differential amplifier (not shown) and amplified, and a magnetic bubble memory output signal of about 4 mV is obtained by using the lid signal of the detection signal.

しかしながら、上記構成による磁気バブルメモリデバィ
スにおいて、回転磁界を発生するXコイル5aおよびY
コイル5bは、第2図aに示したように、そのコイルの
軸0方向(L方向)に対しての電圧VLの分布は第2図
bに示したように一様増加あるいは一様減少の関数を有
している。
However, in the magnetic bubble memory device with the above configuration, the X coil 5a and Y coil 5a that generate the rotating magnetic field are
As shown in Fig. 2a, the distribution of voltage VL of the coil 5b with respect to the axis 0 direction (L direction) of the coil is uniformly increasing or uniformly decreasing as shown in Fig. 2b. It has a function.

一方、このように、端子電圧の電位分布が異なったXコ
イル5a,Yコイル5bは、X軸方向およびY軸方向に
それぞれ直交して組合され、上記出力信号配線3a,3
bがこのXコイル5aおよびYコイル5bの開口端側か
ら引き出されている構成となっている。このため、X,
Yコイル5a,5bと出力信号配線3a間と、X,Yコ
イル5a,5bと出力信号配線3b間との間にわずかな
静電容量差(容量結合のアンバランス)があると、出力
端子4aと出力端子4bとの間ではそれぞれ振幅の異な
った静電結合雑音が検出信号に重畳し、差敷増幅器で検
出信号を増幅する際、その静電結合雑音の差分(アンバ
ランス分)が増幅され、磁気バブルメモリ出力信号のS
/N比を著しく低下させてしまい、磁気バブルメモリ出
力の判別を極めて困難なものにしてしまうなどの欠点を
有している。したがって、本発明の目的は、上記の欠点
を改善するためになされたものであり、静電結合雑音を
低減させ、磁気バブルメモリ出力信号のSノN比を大幅
に向上させた磁気バブルメモリデバイスを提供すること
にある。
On the other hand, the X coil 5a and Y coil 5b having different terminal voltage potential distributions are combined orthogonally in the X-axis direction and the Y-axis direction, respectively, and the output signal wirings 3a, 3
b is drawn out from the open end side of the X coil 5a and Y coil 5b. For this reason, X,
If there is a slight capacitance difference (imbalance of capacitive coupling) between the Y coils 5a, 5b and the output signal wiring 3a and between the X, Y coils 5a, 5b and the output signal wiring 3b, the output terminal 4a Capacitive coupling noise with different amplitudes is superimposed on the detection signal between the output terminal 4b and the output terminal 4b, and when the detection signal is amplified by the differential amplifier, the difference (unbalanced portion) of the capacitive coupling noise is amplified. , S of the magnetic bubble memory output signal
This method has disadvantages such as significantly lowering the /N ratio and making it extremely difficult to discriminate the output of the magnetic bubble memory. Therefore, an object of the present invention was to improve the above-mentioned drawbacks, and to provide a magnetic bubble memory device that reduces capacitive coupling noise and significantly improves the S/N ratio of the magnetic bubble memory output signal. Our goal is to provide the following.

このような目的を達成するために、本発明による磁気バ
ブルメモリデバイスは、回転磁界発生コイルの電位分布
の低圧側から磁気バブルメモリ素子の出力信号配線を引
き出すようにしたものである。
In order to achieve such an object, the magnetic bubble memory device according to the present invention is configured such that the output signal wiring of the magnetic bubble memory element is drawn out from the low voltage side of the potential distribution of the rotating magnetic field generating coil.

以下図面を用いて本発明による磁気バブルメモリデバイ
スについて詳細に説明する。第3図は本発明による磁気
バブルメモリデバイスの一例を示す要部平面図であり、
第1図a,bと同記号は同一要素となるのでその説明は
省略する。
The magnetic bubble memory device according to the present invention will be described in detail below with reference to the drawings. FIG. 3 is a plan view of essential parts showing an example of a magnetic bubble memory device according to the present invention,
Since the same symbols as in FIGS. 1a and 1b represent the same elements, their explanation will be omitted.

同図において、5a,は回転磁界発生Xコイル5aの電
位分布の低圧側であり、5a2はその高圧側である。ま
た、50は回転磁界発生Yコイル5bの電位分布の低圧
側であり、5Qはその高圧側である。このように構成さ
れた回転磁界発生用X,Yコイル5a,5bにおいて、
このX,Yコイル5a,5bの端子電圧の電位分布が低
い低圧側5a,と5b,とによって構成された関口部5
c側から上記磁気バブルメモリ素子2の出力信号配線3
c,3dを引き出し、出力端子4c,4dに接続されて
いる。つまり、回転磁界発生Xコイル5a,Yコイル5
bの電位分布の低い開□部側に配線パタンからなる出力
信号配線3c,3dを絶縁基板1上に被看形成したもの
である。このように構成された磁気バブルメモリデバイ
スにおいて、回転磁界発生用×コイル5a,Yコイル5
bの電位分布の低い低圧側5a,,5b,の開□部5c
側から出力信号配線3c,3dを引き出したことによっ
て、出力信号配線3c,3dに華畳される静電結合雑音
は従釆に比べて約1/10以下となるとともに、静電結
合のアンバランス分の雑音が従来の1.3mVに比べて
0.5mV以下に低減させることができた。
In the figure, 5a is the low voltage side of the potential distribution of the rotating magnetic field generating X coil 5a, and 5a2 is the high voltage side. Further, 50 is the low voltage side of the potential distribution of the rotating magnetic field generating Y coil 5b, and 5Q is the high voltage side. In the rotating magnetic field generating X and Y coils 5a and 5b configured in this way,
Sekiguchi section 5 constituted by low voltage sides 5a and 5b where the potential distribution of the terminal voltage of the X and Y coils 5a and 5b is low.
Output signal wiring 3 of the magnetic bubble memory element 2 from the c side
c and 3d are pulled out and connected to output terminals 4c and 4d. In other words, the rotating magnetic field generating X coil 5a, Y coil 5
Output signal wirings 3c and 3d consisting of a wiring pattern are formed on the insulating substrate 1 under observation on the opening side where the potential distribution of b is low. In the magnetic bubble memory device configured in this way, the × coil 5a and the Y coil 5 for generating a rotating magnetic field are used.
The opening □ part 5c of the low voltage side 5a, 5b, where the potential distribution of b is low
By pulling out the output signal wirings 3c and 3d from the side, the capacitive coupling noise generated on the output signal wirings 3c and 3d is reduced to about 1/10 or less compared to the secondary one, and the unbalance of the capacitive coupling is reduced. The noise level was reduced to 0.5 mV or less compared to the conventional 1.3 mV.

したがって、磁気バブルメモリ出力信号のS/N比が大
幅に改善され、磁気バブルメモリ出力の判別を容易に行
なうことができる。以上説明したように、本発明による
磁気バブルメモリデバイスによれば、回転磁界発生コイ
ルの結合によって生ずる静電結合雑音を著しく低減させ
、磁気バブルメモリ出力信号のS/N比を大幅に向上さ
せることができ、磁気バブルメモリデバイスとしての品
質、性質等を大幅に高めることができるなどの優れた効
果を有する。
Therefore, the S/N ratio of the magnetic bubble memory output signal is greatly improved, and the output of the magnetic bubble memory can be easily determined. As explained above, according to the magnetic bubble memory device according to the present invention, the capacitive coupling noise caused by the coupling of the rotating magnetic field generating coils can be significantly reduced, and the S/N ratio of the magnetic bubble memory output signal can be significantly improved. It has excellent effects such as being able to significantly improve the quality and properties of a magnetic bubble memory device.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a,bは従来の磁気バブルメモリデバイスの一例
を示す要部破砕平面図、そのA−A′断面図、第2図a
,bは回転磁界発生コイルの要部斜視図、その電位分布
特性図、第3図は本発明による磁気バブルメモリデバイ
スの一例を示す要部破砕平面図である。 1・・・・・・絶縁基板、2・・・…磁気バブルメモリ
素子、3a,3b,3c,3d・・・・・・出力信号配
線、4a,4b,4c,4d・・・・・・出力端子、5
a・…・・×コイル、5a.・・・・・・低圧側、5a
2・・・・・・高圧側、5b・・…・Yコイル、5q・
・・・・・低圧側、5Q・・・・・・高圧側、5c……
関口部。 第1図 第2図 第3図
Figures 1a and b are a fragmented plan view of essential parts showing an example of a conventional magnetic bubble memory device, a sectional view taken along line A-A', and Figure 2a.
, b is a perspective view of a main part of a rotating magnetic field generating coil, and a potential distribution characteristic diagram thereof, and FIG. 3 is a fragmentary plan view of a main part showing an example of a magnetic bubble memory device according to the present invention. 1...Insulating substrate, 2...Magnetic bubble memory element, 3a, 3b, 3c, 3d...Output signal wiring, 4a, 4b, 4c, 4d... Output terminal, 5
a...×Coil, 5a.・・・・・・Low pressure side, 5a
2...High voltage side, 5b...Y coil, 5q.
...Low pressure side, 5Q...High pressure side, 5c...
Sekiguchi section. Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 1 絶縁基板と、前記絶縁基板上に配置された磁気バブ
ルメモリ素子と、前記絶縁基板上に被着形成されかつ前
記磁気バブルメモリ素子の微少出力信号を伝送する出力
信号配線と、前記磁気バブルメモリ素子の外周に巻回さ
れかつ前記磁気バブルメモリ素子に回転磁界を供給する
回転磁界発生コイルとを少なくとも有する磁気バブルメ
モリデバイスにおいて、前記出力信号配線を前記回転磁
界発生コイルの電位分布の低圧側に形成し、前記回転磁
界発生コイルから該出力信号配線に結合される静電結合
雑音を低減させたことを特徴とする磁気バブルメモリデ
バイス。
1. an insulating substrate, a magnetic bubble memory element disposed on the insulating substrate, an output signal wiring formed on the insulating substrate and transmitting a minute output signal of the magnetic bubble memory element, and the magnetic bubble memory. In a magnetic bubble memory device having at least a rotating magnetic field generating coil wound around the outer periphery of the element and supplying a rotating magnetic field to the magnetic bubble memory element, the output signal wiring is placed on the low voltage side of the potential distribution of the rotating magnetic field generating coil. 1. A magnetic bubble memory device characterized in that the capacitive coupling noise coupled from the rotating magnetic field generating coil to the output signal wiring is reduced.
JP52049962A 1977-05-02 1977-05-02 magnetic bubble memory device Expired JPS6023430B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52049962A JPS6023430B2 (en) 1977-05-02 1977-05-02 magnetic bubble memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52049962A JPS6023430B2 (en) 1977-05-02 1977-05-02 magnetic bubble memory device

Publications (2)

Publication Number Publication Date
JPS53136443A JPS53136443A (en) 1978-11-29
JPS6023430B2 true JPS6023430B2 (en) 1985-06-07

Family

ID=12845641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52049962A Expired JPS6023430B2 (en) 1977-05-02 1977-05-02 magnetic bubble memory device

Country Status (1)

Country Link
JP (1) JPS6023430B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239988A (en) * 1984-05-14 1985-11-28 Fujitsu Ltd Magnetic bubble memory controller

Also Published As

Publication number Publication date
JPS53136443A (en) 1978-11-29

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