JPS6025025B2 - Manufacturing method of semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device, in which a semiconductor wafer substrate is bonded to a substrate and mechanically separated and cut into individual semiconductor devices.

Conventionally, when converting a semiconductor wafer substrate into individual devices, it is fixed by gluing it to a hard transparent material substrate such as a glass substrate or quartz substrate using adhesive or wax, and then using a dicing machine to separate each device into individual pieces. The device is cut to size, the electrode leads of the mounting board (lead frame) are bonded to predetermined external terminals, and the adhesive or wax on the connected individual devices is melted and removed to complete the mounting and assembly process.

However, the above-mentioned method has many drawbacks, resulting in a decrease in manufacturing yield and quality of semiconductor devices. For example, when a semiconductor wafer substrate is separated and cut into individual devices, cut chunks adhere to the main surface of the device, resulting in deterioration of characteristics. In order to prevent this, after the wafer substrate is attached to a fixed substrate and processed, a wax agent is evenly applied to the main surface side of the sub-chamber to prevent the cut lumps from directly adhering to the main surface of the substrate during separation and cutting. Preventing. However, the wax agent must be removed after separation and cutting, and when the wax material is removed, the adhesive that attaches the individual piece devices also melts, causing a rising phenomenon and easily causing contamination on the external terminal surface. Therefore, when the electrode lead of the mounting board is bonded to this part, the strength characteristics of the bonding surface are deteriorated, and furthermore, the adhesive on the back side of the singulation device is carbonized due to the high bonding temperature. safe removal becomes impossible;
Adhesion failure occurs during the soldering process to the back side of the device. The present invention eliminates the above-mentioned drawbacks and provides adhesive and photopolymerizable dry photosensitive resin films (
By attaching dry photo film) and fixing it to a fixed substrate, it improves the workability of separating and cutting semiconductor wafer substrates into individual pieces, eliminates the rising phenomenon of gluing agent, and maintains adhesion during bonding mounting. It is an object of the present invention to provide a manufacturing method that maintains the life of dicing teeth and prevents increases in product costs.

The present invention involves a step of attaching a dry photosensitive resin film to the main surface and back side of a semiconductor wafer substrate on which element electrodes and circuit wiring are formed, and thermocompression bonding a fixing substrate to the back surface, and dry photosensitive resin film on the main surface side. A process of selectively patterning the photosensitive resin film to expose the external connection terminal wiring area, and mechanically cutting along predetermined individual piece separation areas to remove the dry photosensitive resin from the entire thickness side of the semiconductor wafer. a step of cutting only a certain thickness from the surface of the film; a step of bonding and connecting the electrode lead of the mounting board to the external connection terminal of the semiconductor device which has been cut into individual pieces;
The device has a protective film of a dry photosensitive resin film on the main surface side, and is characterized by a step of separating the individual device from the dry photosensitive resin film surface on the back side by lifting the electrode leads of the communication board upward. This is a method for manufacturing a semiconductor device.

According to the present invention, since it is possible to use an insulating surface protection film that acts as a mechanical protection film on the main surface side of the semiconductor chipping device during the chipping process, it is possible to use the insulating surface protection film on the main surface side of the semiconductor chipping device during the manufacturing of the product. This has the effect of saving labor and reducing manufacturing costs.

In other words, it is possible to control the adhesion of cutting lumps to the surface during mechanical separation and cutting, and to simplify the operation for removing the slightly adhering cut lumps. Another effect is that even if the mounting board electrode lead is bonded while it is still attached to the fixed board, the wax agent melts and becomes liquid when heated as in the case of a bonding method, but the dry photosensitive resin film used here 200-30
Since the bonding of 000 does not become liquid at high temperature, but only slightly softens, the phenomenon of the gluing agent rising up on the side surface of the semiconductor chip device, which was a major drawback of conventional methods, has been eliminated. By solving this problem, it is possible to stabilize the bonding work and maintain a high level of product quality after mounting. Next, the present invention will be explained using the drawings.

For convenience of explanation, the element electrode region and circuit wiring region constituting the semiconductor device have been omitted, and the explanation has been made using the external terminal electrode region. 1 to 5 are cross-sectional views showing a manufacturing method for separating a bump-type semiconductor device into individual pieces according to an embodiment of the present invention.

First, a silicon substrate (
Bump terminal wiring 3 and singulation separation area 4 on wafer substrate) 1
The wafer substrate is attached to the quartz plate through the adhesive dry photosensitive resin film 6a using the quartz plate 5 as a fixed substrate, and as a simultaneous process, another dry photosensitive layer is applied to the main surface of the wafer substrate. The adhesive resin film 6b is attached (FIG. I). For example, as the dry photosensitive resin film, a Liston film manufactured by DuPont may be used.
It is best to use 20 to 30 mounds. At this time, the thickness t of the bump terminal wiring 3 is 30 to 50 mm. this is,
For example, it may be formed by electroplating, and may be made of Au, Cu, Ni, or a combination thereof, or may be made of other metal materials. The gluing method can be achieved by stacking and inserting the two types of dry photosensitive resin films, quartz plate, and wafer substrate between pressure rolls heated to about 100°C, and the wafer substrate is continuously processed. You can process multiple times with . The two types of dry photosensitive resin films 6a and 6b may be made of different materials.

Next, the dry photosensitive resin film 6b provided on the main surface side of the wafer substrate is subjected to photosensitive treatment and predetermined phenomenon treatment by aligning the bump terminal wiring area 3 and the singulation separation area 4 with a mask pattern. and remove the dry photosensitive resin film 6b on the bump terminal surface and separation region surface to expose each (second
figure).

Subsequently, a dicing device is used to mechanically cut the wafer substrate 1 along the singulation separation region 4 to cut the wafer substrate 1 into widths WI.

At this time, the cutting groove 7 is controlled so as not to cut the entire thickness of the gluing resin film 6a, but to stop at the thickness ta' in the middle thereof. That is, when ta > ta and ta is 100 to 100, it is best to treat the skin to 70 to 80. In this case, if silicon lumps generated during cutting adhere to the wafer substrate surface, even if the removal operation is performed by chemical corrosion, the characteristics of the two types of dry photosensitive resin films 6a and 6b will not change. No (Figure 3). Next, the electrode leads extending from the mounting board 8 are bonded to the bump terminals 3 (fourth
figure).

Normally, a heat treatment is performed during the bonding process. For example, when the bonding agent is heated to 250 to 30,000 ℃, the bonding agent used in the conventional method was wax, etc., so it melts into a liquid state, rises up the side of the silicon substrate 1, and forms the bump terminal. However, in this method, the dry photosensitive resin film 6a,
6b progresses into polymerization through photopolymerization and thermal polymerization, hardens without melting, and exists in solid form, allowing normal bonding and mounting. Finally, when the bonded singulation device is pulled upward, the mounted product is completed without any resin film stains on the back side of the device because the adhesiveness of the polymerized dry photosensitive resin film has weakened. (Figure 5).

By repeating the above method, all of the predetermined singulation devices on the silicon wafer substrate can be mounted. According to the above embodiment, since the dry photosensitive resin film with a thick adhesive layer can be continuously glued and fixed in the form of a sheet, the productivity of the semiconductor product is greatly improved, and the wafer substrate can be cut into individual pieces. The dicing groove is controlled in the middle of the thickness of the thick dry photosensitive resin film made of a polymer when the dicing groove is separated and cut into the oxidizing device, thereby preventing the dicing teeth from reaching the hard fixed substrate. The life of the seed tooth material can be maintained and production costs can be reduced.

In addition, since the phenomenon of gluing agent rising, which is seen with wax agents, etc., does not occur during bonding mounting that involves heat treatment, the bonding surface can be mounted while maintaining its cleanliness, and the mechanical strength of the contact interface is improved. It can be fully controlled and improves quality. On the other hand, after bonding and mounting, there is no melting and adhesion of wax, etc., to the back side of the individual device as in the past, so it is possible to easily attach a solder metal film during the soldering process on the back side, improving product production yield. This has a great effect on maintaining quality. Furthermore, a dry photosensitive resin film installed on the main surface of the device at the same time prevents the cut silicon chunks from directly adhering to the circuit wiring during dicing, and prevents chemical corrosion when removing the silicon cut chunks. The resin film can be treated without affecting the resin film even if it is carried out, and it can be left in the facility until the final process, so it has the great advantage of being able to be used as a surface protective film for the final product. The present invention has been explained above using a simple example, but
The type of dry photosensitive resin film, fixed adhesion conditions, bonding conditions, type of backside soldering material, fixed substrate material, etc. are not limited to the above examples, and the present invention may change these as appropriate. This method can be widely implemented in the manufacture of semiconductor devices.

Note that the circuit wiring structure of the semiconductor device may be a multilayer wiring structure with an insulating film interposed therebetween.

[Brief explanation of the drawing]

1 to 5 are cross-sectional views of an embodiment of the method for manufacturing a bump-type semiconductor device of the present invention. 1...Silicon substrate, 2...Silicon oxide film, 3...Bump terminal wiring, 4...
・Device singulation separation area, 5...Quartz substrate, 6a
, 6b...Dry photosensitive resin film, 7...
Singulation separation cutting groove, 8... Mounting board, 9...
...electrode lead. Figure 3 Leopard Figure 4 Younger brother

Claims (1)

[Claims] 1. A step of applying a dry photosensitive resin film to both the front and back surfaces of a semiconductor wafer substrate on which a plurality of semiconductor devices are formed, and a step of preliminarily fixing the semiconductor wafer substrate to a fixing substrate using the dry photosensitive resin film on the back surface. , patterning the dry photosensitive resin film on the front side to expose external connection terminals, and machining the entire thickness of the semiconductor wafer substrate and only a certain thickness from the surface of the dry photosensitive resin film. a step of separating the semiconductor device into individual pieces by cutting the semiconductor device into individual pieces; a step of connecting the electrode lead of the mounting board to the external connection terminal of the semiconductor device; and a step of pulling up the electrode lead to dry the semiconductor device on the back side. A method for manufacturing a semiconductor device, comprising a step of separating it from a photosensitive resin film.