JPS6034196B2 - semiconductor integrated circuit - Google Patents
semiconductor integrated circuitInfo
- Publication number
- JPS6034196B2 JPS6034196B2 JP53083327A JP8332778A JPS6034196B2 JP S6034196 B2 JPS6034196 B2 JP S6034196B2 JP 53083327 A JP53083327 A JP 53083327A JP 8332778 A JP8332778 A JP 8332778A JP S6034196 B2 JPS6034196 B2 JP S6034196B2
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- input
- signal
- transistor
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 230000006870 function Effects 0.000 description 8
- 230000007257 malfunction Effects 0.000 description 7
- 230000001052 transient effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Landscapes
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Electronic Switches (AREA)
- Tests Of Electronic Circuits (AREA)
Description
【発明の詳細な説明】
本発明は半導体集積回路の改良に関し、更に詳述すれば
1個の入力端子に複数の信号を入力させる機能を有せし
め、且つそのうちの一つの機能については雑音信号又は
過渡電圧の入力による誤動作を回避し得るようにして信
頼性を高めた半導体集積回路の入力回路を提案したもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement of a semiconductor integrated circuit, and more specifically, it has a function of inputting a plurality of signals to one input terminal, and one of the functions has a function of inputting a plurality of signals to a single input terminal. This invention proposes an input circuit for a semiconductor integrated circuit that can avoid malfunctions due to input of transient voltages and has improved reliability.
半導体集積回路の入力信号の中には不揮発性メモリトラ
ンジスタへの書込み信号、あるいは半導体集積回路(以
下ICという)内部のロジックチェックや、誤動作時に
ICの論理状態を初期値にリセットするための信号のよ
うに使用頻度が極めて少し、信号が在る。斯かる信号は
一般に特殊な機能を有している場合が多く、そのためも
あって他の信号にも増して雑音信号等による誤動作を防
止する必要がある。一方、ICにおいては製造工程を簡
単化し、且つサイズの小型化を図るために端子数を可及
的に小とすることが望まれ、‐一般に前述の如き使用頻
度の極めて低い信号の為に特別の端子を設けることは無
駄なことであるとされている。このため従来にあっては
端子を時分割的に用いることとして、一つの端子に複数
の機能を有せしめるという方法が探られてきたが、この
ような方法は誤動作防止上の観点からは有効な方法であ
るとは言い難い。本発明は斯かる事情に鑑みてなされた
ものであって、信号入力端子に接続されたクランプトラ
ンジスタを付加し、低出力インピーダンスの信号源より
の信号のみがクランプ電圧を越える信号を後段の回路に
加え得るようにすることによって、入力端子に複数の機
能を持たせると共に、そのうちの一つの機能については
雑音信号、過度電圧による誤動作を回避して信頼性を高
めたICを提供することを目的とし、以下に本発明をそ
の実施例を示す図面に基いて詳述する。Some of the input signals for semiconductor integrated circuits include write signals to nonvolatile memory transistors, logic checks inside semiconductor integrated circuits (hereinafter referred to as ICs), and signals for resetting the logic state of an IC to its initial value in the event of a malfunction. There is a signal that is rarely used. Such signals generally have special functions in many cases, and for this reason, it is necessary to prevent malfunctions due to noise signals and the like more than other signals. On the other hand, in ICs, it is desirable to simplify the manufacturing process and reduce the number of terminals as much as possible in order to reduce the size. It is said that it is wasteful to provide terminals. For this reason, conventional methods have been explored in which a single terminal has multiple functions by using terminals in a time-sharing manner, but such methods are not effective from the perspective of preventing malfunctions. It is hard to say that it is a method. The present invention has been made in view of the above circumstances, and by adding a clamp transistor connected to the signal input terminal, only the signal from the signal source with low output impedance exceeds the clamp voltage is transmitted to the subsequent circuit. By making it possible to add multiple functions to the input terminal, the purpose of the present invention is to provide an IC with improved reliability by allowing the input terminal to have multiple functions, and by avoiding malfunctions caused by noise signals and transient voltages for one of the functions. DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to drawings showing embodiments thereof.
第1図は本発明に係るICにおける入力回路部分を示し
、第2図イ,口はその動作説明のための波形図である。FIG. 1 shows the input circuit portion of an IC according to the present invention, and FIG. 2A and 2B are waveform diagrams for explaining its operation.
第1図においてQ,はクラソプトランジスタたるnチヤ
ンネル・エンハンスメント型のMISトランジスタであ
って、そのしさし、値電圧をVmとする。Q2はIC内
部の論理回路の入力トランジスタである。トランジスタ
Q,のドレイン及びゲートに連なる端子P.はこのIC
の信号入力端子であり、トランジスタQ,のソースに連
なる端子P2はこのICの電源端子に接続され、電源電
圧Vooが印加されている。端子P,に連なるトランジ
スタQ,のゲート及びドレィンは前記トランジスタQ2
のゲート電極に接続され、また端子P3に連なっており
、この端子P3にはこのICを構成する不揮発性メモリ
トランジスタ又は電圧識別回路が接続されている。而し
て端子P,には2種類の信号が入力され、その第1種の
入力信号はこのICの基板電位とV血との間に信号電圧
の振幅を有し、第2種の入力信号はVoo+Vthより
も十分高い電圧の信号である。In FIG. 1, Q is an n-channel enhancement type MIS transistor, which is a Clasp transistor, and its measurement and value voltage are Vm. Q2 is an input transistor of the logic circuit inside the IC. A terminal P. connected to the drain and gate of the transistor Q. is this IC
A terminal P2, which is a signal input terminal of the IC and connected to the source of the transistor Q, is connected to a power supply terminal of this IC, and a power supply voltage Voo is applied thereto. The gate and drain of the transistor Q connected to the terminal P are connected to the transistor Q2.
It is connected to the gate electrode of the IC, and is connected to a terminal P3, and a nonvolatile memory transistor or a voltage identification circuit constituting this IC is connected to this terminal P3. Two types of signals are input to the terminal P, the first type of input signal has a signal voltage amplitude between the substrate potential of this IC and V blood, and the second type of input signal has a signal voltage amplitude between the substrate potential of this IC and V blood. is a signal with a voltage sufficiently higher than Voo+Vth.
第1種の入力信号の信号源の出力インピーダンスは高イ
ンピーダンスであってもよいのに対し、第2種の入力信
号の信号源の出力インピーダンスはトランジスタQ,導
適時の入力インピーダンスより十分低く定めている。換
言すればトランジスタQ,のオン抵抗を第2種の入力信
号の信号源の出力インピーダンスよりも十分高い値とな
るようにしている。次にこれらの入力信号を端子P.に
印加した場合における上記本発明回路の動作を説明する
。第2図イは端子P,に加えられる信号の電圧レベルを
示し、第2図口は端子P2に流入する電流のレベルをい
ずれも機軸に時間をとって示してあり、T,は無信号の
期間を、T2は端子P,に第1種の入力信号が、またT
3は第2種の信号が入力されている期間を示している。
さて、まず第1種の入力信号が端子P,に加えられた場
合(期間T2)はトランジスタQ,はオンすることなく
、この入力信号はそのままトランジスタQ2に伝えられ
、トランジスタQ2は所定の動作を行う。The output impedance of the signal source for the first type input signal may be high impedance, whereas the output impedance of the signal source for the second type input signal is set to be sufficiently lower than the input impedance of the transistor Q when conductive. There is. In other words, the on-resistance of the transistor Q is set to a value sufficiently higher than the output impedance of the signal source of the second type of input signal. These input signals are then connected to terminal P. The operation of the circuit of the present invention when the voltage is applied will be explained. Figure 2 A shows the voltage level of the signal applied to the terminal P, Figure 2 shows the level of the current flowing into the terminal P2 over time, and T shows the level of the current flowing into the terminal P2. T2 is the period when the first type input signal is at terminal P, and T2 is
3 indicates a period during which the second type signal is input.
Now, first, when the first type input signal is applied to the terminal P, (period T2), the transistor Q is not turned on, and this input signal is directly transmitted to the transistor Q2, and the transistor Q2 performs a predetermined operation. conduct.
このとき端子P,から流れ込む電流はトランジスタQ,
並びにQ2のゲ一ト及び接合の漏れ電流のみであり、第
2図口に示すように小さいので、前述の如くこの第1種
の入力信号の信号源は高出力インピーダンスであっても
良い。次に第2種の入力信号が端子P,に加えられた場
合(期間T3)は、トランジスタQ,はオンとなり、こ
のために端子P,から端子P2に向かって第2図口に示
す如き大きな電流が流れる。At this time, the current flowing from the terminal P is the transistor Q,
Also, since the leakage current is only from the gate and junction of Q2 and is small as shown at the beginning of FIG. 2, the signal source of this first type input signal may have a high output impedance as described above. Next, when the second type of input signal is applied to the terminal P, (period T3), the transistor Q is turned on, so that a large Current flows.
ところがこの第2種の入力信号の信号源の出力インピー
ダンスはトランジスタQ,のオン抵抗より十分低いので
端子P,はVoo+Vthより十分高い電圧に上昇し第
2種の入力信号が有効なものとなる。However, since the output impedance of the signal source of the second type input signal is sufficiently lower than the on-resistance of the transistor Q, the voltage at the terminal P rises to a voltage sufficiently higher than Voo+Vth, and the second type input signal becomes effective.
そして端子P3に不揮発性メモリトランジスタが接続さ
れている場合において、その書込みしきい値がV。。よ
りも高いときは、この第2種の入力信号が加えられた時
にのみ書込みが行われることになり、また端子P3に電
圧識別回路が接続されている場合において、そのしさし
、値がV。Dであるときは、この第2種の入力信号が検
出されることになる。なお第2種の入力信号はトランジ
スタQ2にも伝えられるので第2種の信号の入力は前記
第1種の信号と第2種の信号とを共に入力したことにな
る。さて一方、端子P,に雑音信号、過渡電圧が入力さ
れた場合は、これらの信号源の出力ィンピ−ダンスは一
般に高いので、これらの入力によりトランジスタQ,が
オンとなり、端子P,,P2間がその導通抵抗で短縮さ
れると、雑音信号、過渡電圧は減衰し、端子P,がVD
D+Vthより十分高い電圧とはなり得ず、これら雑音
信号等が第2種の入力信号として端子3に連なる回路に
誤動作を惹起することがない。When a nonvolatile memory transistor is connected to terminal P3, its write threshold is V. . When it is higher than , writing is performed only when this second type of input signal is applied, and when a voltage identification circuit is connected to terminal P3, its measure and value is V. D, this second type of input signal will be detected. Note that since the second type input signal is also transmitted to the transistor Q2, the input of the second type signal means that the first type signal and the second type signal are input together. On the other hand, when a noise signal or a transient voltage is input to terminal P, since the output impedance of these signal sources is generally high, these inputs turn on transistor Q, and the voltage between terminals P, P2 is turned on. is shortened by its conduction resistance, the noise signal, the transient voltage, is attenuated and the terminal P, becomes VD
The voltage cannot be sufficiently higher than D+Vth, and these noise signals and the like will not cause malfunction in the circuit connected to the terminal 3 as a second type input signal.
以上のように本発明による場合はICの一つの端子P,
に複数の信号を入力せしめることが可能になり、且つ前
記第2種の入力信号については雑音信号、過渡電圧の入
力による誤動作を回避し得ることになり、製造工程が簡
単であり、小型化された高信榎度のICを提供すること
が可能となる。As described above, according to the present invention, one terminal P of the IC,
It is now possible to input a plurality of signals to the second type of input signal, and it is possible to avoid malfunctions due to the input of noise signals and transient voltages, and the manufacturing process is simple and can be miniaturized. This makes it possible to provide ICs with high reliability.
なお、上記説明ではトランジスタQ,をnチャネルとし
たが、pチャネルのものを用いる場合にも極性が反転す
るのみであり本発明を適用し得ることは言うまでもない
。また第1種の入力信号として時分割信号を用い得るこ
とも勿論である。In the above description, the transistor Q is an n-channel transistor, but it goes without saying that the present invention can also be applied to the case where a p-channel transistor is used since the polarity is simply reversed. It goes without saying that a time-division signal can also be used as the first type of input signal.
図面は本発明の実施例を示すものであって、第1図は本
発明に係るICの入力回路部分を略示する回路図、第2
図イ,口は本発明回路の動作を説明するための波形図で
ある。
Q,,Q2・…”トランジスタ、P,,P2,P3・…
“端子。
第1図
第2図The drawings show embodiments of the present invention, and FIG. 1 is a circuit diagram schematically showing an input circuit portion of an IC according to the present invention, and FIG.
Figures A and B are waveform diagrams for explaining the operation of the circuit of the present invention. Q,,Q2・…”Transistor, P,,P2,P3・…
“Terminal. Figure 1 Figure 2
Claims (1)
半導体集積回路において、そのゲート及びドレインを前
記端子に接続し、そのソースを所定の電圧としたエンハ
ンスメント型のトランジスタを付加し、該トランジスタ
のオン抵抗を、前記入力信号のうち前記ソースの電圧よ
りも十分高いレベルを有する入力信号の信号源の出力イ
ンピーダンスよりも十分高い値としたことを特徴とする
半導体集積回路。1. In a semiconductor integrated circuit equipped with a terminal to which at least two types of input signals are input, an enhancement type transistor is added whose gate and drain are connected to the terminal and whose source is set to a predetermined voltage, and the transistor is An on-resistance of the semiconductor integrated circuit is set to a value sufficiently higher than an output impedance of a signal source of an input signal having a sufficiently higher level than a voltage of the source among the input signals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53083327A JPS6034196B2 (en) | 1978-07-07 | 1978-07-07 | semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53083327A JPS6034196B2 (en) | 1978-07-07 | 1978-07-07 | semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5512515A JPS5512515A (en) | 1980-01-29 |
| JPS6034196B2 true JPS6034196B2 (en) | 1985-08-07 |
Family
ID=13799325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53083327A Expired JPS6034196B2 (en) | 1978-07-07 | 1978-07-07 | semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6034196B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61140000A (en) * | 1984-12-10 | 1986-06-27 | Nec Corp | Programmable read-only memory |
-
1978
- 1978-07-07 JP JP53083327A patent/JPS6034196B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5512515A (en) | 1980-01-29 |
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