JPS6038865B2 - Water washing equipment - Google Patents
Water washing equipmentInfo
- Publication number
- JPS6038865B2 JPS6038865B2 JP7013377A JP7013377A JPS6038865B2 JP S6038865 B2 JPS6038865 B2 JP S6038865B2 JP 7013377 A JP7013377 A JP 7013377A JP 7013377 A JP7013377 A JP 7013377A JP S6038865 B2 JPS6038865 B2 JP S6038865B2
- Authority
- JP
- Japan
- Prior art keywords
- washing
- water
- tank
- water washing
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005406 washing Methods 0.000 title claims description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title description 33
- 239000002351 wastewater Substances 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 4
- 238000011010 flushing procedure Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 239000008213 purified water Substances 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 101100537937 Caenorhabditis elegans arc-1 gene Proteins 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は薬品による表面処理等を行なう工程において、
処理後の水洗を行なう水洗装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a process for performing surface treatment with chemicals, etc.
The present invention relates to a water washing device that performs water washing after processing.
従来、薬品による表面処理は多くの製造業において用い
られているが、半導体装置の製造にも、各種の薬品によ
る基板の表面処理が何回もくり返して行なわれる。Conventionally, surface treatment with chemicals has been used in many manufacturing industries, and in the manufacture of semiconductor devices, surface treatment of substrates with various chemicals is repeatedly performed many times.
この場合、処理後の水洗は一般に捌け○抑‐１程度の純
水を使用した２段あるいは３段のカスケード水洗である
。カスケード水洗において、上段から中段、下段へと純
水の比抵抗が下がり、上段で捌け○肌−１の比抵抗の場
合、中、下段では５〜１０ＭＱ弧−１になる。In this case, the washing after treatment is generally a two- or three-stage cascade washing using pure water with a resolution of about -1. In cascade water washing, the resistivity of pure water decreases from the upper stage to the middle stage and the lower stage, and if the resistivity of pure water is 1 in the upper stage, it becomes 5 to 10 MQ arc-1 in the middle and lower stages.
純水の流量が一定の場合、この比抵抗は一定に保たれる
が、汚れあるいは処理液の水洗槽内への持ち込みによる
大きな変化に対しては、同一流量では比抵抗の回復が遅
い欠点を持っている。例えば、２％の弗化水素酸を含む
表面処理液で処理を行なった半導体基板をそのままカス
ケード水洗槽に入れた場合、純水の比抵抗は０．１ＭＱ
仇‐１以下に下がり、流量を情以上に増加しても容易に
元の比抵抗に回復しない。特に基板がアルミニウム等の
活性金属薄膜を有する場合には、水洗槽内においてきわ
めて薄い酸によるエッチング反応が起り、水洗中にアル
ミ等が溶解する。このように従来の水洗装置は水の比抵
抗の回復が遅く、また比抵抗回復には多量の水を必要と
する欠点があつた。本発明は上記欠点を除き、高価な純
水を大量消費する事ないこ短時間で最大の水洗効果を得
る水洗装置を提供するものである。If the flow rate of pure water is constant, this resistivity will remain constant, but if there is a large change due to dirt or processing liquid brought into the washing tank, the resistivity will not recover slowly at the same flow rate. have. For example, if a semiconductor substrate treated with a surface treatment solution containing 2% hydrofluoric acid is placed directly into a cascade washing tank, the specific resistance of pure water is 0.1MQ.
Even if the resistivity drops to below -1 and the flow rate is increased beyond that, it will not easily recover to the original resistivity. Particularly when the substrate has a thin film of active metal such as aluminum, an etching reaction occurs in the washing tank with very dilute acid, and the aluminum etc. dissolves during washing. As described above, conventional water washing devices have the disadvantage that the specific resistance of water is slow to recover, and that a large amount of water is required to recover the specific resistance. The present invention eliminates the above-mentioned drawbacks and provides a water washing device that achieves the maximum washing effect in a short period of time without consuming a large amount of expensive pure water.
本発明の水洗装置は、カスケード水洗槽と、前記水洗槽
の排水を一時貯蔵するタンクと、前記貯蔵された排水を
加圧するポンプと、前記加圧された排水をスプレィする
ノズルを上部に備え底部には開閉バルブを備えた大型排
出口を有する水洗槽とを含むことを特徴とする。The washing device of the present invention includes a cascade washing tank, a tank for temporarily storing wastewater from the washing tank, a pump for pressurizing the stored wastewater, and a nozzle for spraying the pressurized wastewater at the top, and a bottom part for spraying the pressurized wastewater. It is characterized by including a washing tank having a large discharge port equipped with an on-off valve.
本発明によれば水洗時間を短縮し、水洗に要する水量を
最小に押えられる効果がある。According to the present invention, the washing time can be shortened and the amount of water required for washing can be kept to a minimum.
本発明を実施例により説明する。The present invention will be explained by examples.
第１図は本発明の水洗装置の１実施例の断面図、第２図
は、第１図の部分拡大断面図である。FIG. 1 is a sectional view of one embodiment of the water washing device of the present invention, and FIG. 2 is a partially enlarged sectional view of FIG. 1.
カスケード水洗槽１よりの比抵抗が５〜１００仇‐１の
排純水を落差によりタンク２に貯蔵する。水洗槽３には
最初タンク２の排純水が満たされた状態になっており、
表面処理後の物体、例えば半導体基板８を水洗槽３に入
れると同時に底部のバルブ４が開いて数秒で全排水する
と共に上部のスプレィノズル５よりタンク２の排純水が
ポンプ６により加圧されて基板に噴射される。一定時間
擬純水が噴射された後バルブ４が閉じると共にバイパス
７から排純水が檀内に注入され槽内が排純水で満たされ
、上部よりあふれるとポンプ６が停止する。しかる後に
基板８をカスケード水洗槽１に移し最終水洗を行なえば
水洗が完了する。スプレィの時間は糟の大きさ、基板の
大きさ等により異なるが、大体１〜２分前後で元の排純
水の比抵抗５〜１０ＭＱ弧‐１に回復し、基板をカスケ
ード水洗槽に入れた時にもはやその比抵抗を下げる事は
ない。水洗効果を確認するため、従来方法と本発明の水
洗方法で水洗したものの半導体基板上のアルミニウムの
熔解量を測定したところ、従釆方法では２０００〜４０
００△の厚さ分溶解されるのに対して、本発明の方法で
は２００〜５００Ａ厚さ分と、大幅な向上が認められた
。The purified water discharged from the cascade washing tank 1 and having a specific resistance of 5 to 100 -1 is stored in a tank 2 by a head. The washing tank 3 is initially filled with the purified water drained from the tank 2.
At the same time that a surface-treated object, for example, a semiconductor substrate 8, is placed in the washing tank 3, a valve 4 at the bottom is opened and all the water is drained in a few seconds, and the deionized water drained from the tank 2 is pressurized by the pump 6 through the spray nozzle 5 at the top. is sprayed onto the substrate. After the quasi-pure water is injected for a certain period of time, the valve 4 is closed and the drained purified water is injected into the tank from the bypass 7, filling the tank with the drained purified water, and when the tank overflows from the top, the pump 6 is stopped. Thereafter, the substrate 8 is transferred to the cascade washing tank 1 and a final washing is performed to complete the washing. The spraying time varies depending on the size of the waste, the size of the board, etc., but in about 1 to 2 minutes, the specific resistance of the original drained pure water will be restored to 5 to 10 MQ arc-1, and the board will be placed in the cascade washing tank. When this occurs, the resistivity no longer decreases. In order to confirm the effectiveness of water washing, we measured the amount of aluminum melted on semiconductor substrates after washing with water using the conventional method and the water washing method of the present invention.
In contrast, the method of the present invention melted a thickness of 200 to 500A, which was a significant improvement.
また、水洗時間も従来方法の半分程度で良い事も確認さ
れた。上記実施例は半導体基板を水洗する場合について
説明したが、他の物体の水洗にも本発明の水洗装置を使
用できることは勿論である。It was also confirmed that the washing time was about half that of the conventional method. Although the above embodiment describes the case of washing a semiconductor substrate with water, it goes without saying that the water washing apparatus of the present invention can also be used for washing other objects.
以上詳細に説明したように本発明によれば従来より短時
間に効果的な水洗を行なう事ができ、しかも高価な純水
を節約できる利点がある。As described above in detail, the present invention has the advantage that effective water washing can be carried out in a shorter time than in the past, and that expensive pure water can be saved.
第１図は本発明の水洗装置の１実施例の断面図、第２図
は第１図の部分拡大断面図である。
１・・・…カスケード水洗槽、２・・・・・・排純水貯
蔵タンク、３・…・・水洗槽、４・・・・・・ドレーン
バルプ、５……スプレイノズル、６…・・・加圧ポンプ
、７・・・・・・バイパス、８・・・・・・半導体基板
。
繁’図
多２図FIG. 1 is a sectional view of one embodiment of the water washing device of the present invention, and FIG. 2 is a partially enlarged sectional view of FIG. 1. 1... Cascade washing tank, 2... Drained pure water storage tank, 3... Washing tank, 4... Drain valve, 5... Spray nozzle, 6... - Pressure pump, 7... Bypass, 8... Semiconductor substrate. 2 traditional illustrations
Claims (1)
するタンクと、前記貯蔵された排水を加圧するポンプと
、前記加圧された排水をスプレイするノズルを上部に備
え底部には開閉バルブを備えた大型排出口を有する水洗
槽とを含むことを特徴とする水洗装置。1. A cascade washing tank, a tank for temporarily storing wastewater from the washing tank, a pump for pressurizing the stored wastewater, and a nozzle for spraying the pressurized wastewater at the top, and an on-off valve at the bottom. 1. A flushing device comprising: a flushing tank having a large discharge port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7013377A JPS6038865B2 (en) | 1977-06-13 | 1977-06-13 | Water washing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7013377A JPS6038865B2 (en) | 1977-06-13 | 1977-06-13 | Water washing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS544245A JPS544245A (en) | 1979-01-12 |
| JPS6038865B2 true JPS6038865B2 (en) | 1985-09-03 |
Family
ID=13422753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7013377A Expired JPS6038865B2 (en) | 1977-06-13 | 1977-06-13 | Water washing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6038865B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5787530U (en) * | 1980-11-17 | 1982-05-29 | ||
| JPS6054763A (en) * | 1983-09-05 | 1985-03-29 | Matsushita Electric Ind Co Ltd | Coating device |
-
1977
- 1977-06-13 JP JP7013377A patent/JPS6038865B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS544245A (en) | 1979-01-12 |
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