JPS6040189B2 - Resin-encapsulated semiconductor device - Google Patents
Resin-encapsulated semiconductor deviceInfo
- Publication number
- JPS6040189B2 JPS6040189B2 JP54120770A JP12077079A JPS6040189B2 JP S6040189 B2 JPS6040189 B2 JP S6040189B2 JP 54120770 A JP54120770 A JP 54120770A JP 12077079 A JP12077079 A JP 12077079A JP S6040189 B2 JPS6040189 B2 JP S6040189B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- silicone resin
- silica powder
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
- H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
本発明は樹脂封止型半導体装置に係り、特に封止用のシ
リコーン樹脂を補強充填剤としてのシリカ粉末と共に用
いた樹脂封止型半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resin-sealed semiconductor device, and more particularly to a resin-sealed semiconductor device using a silicone resin for sealing together with silica powder as a reinforcing filler.
シリコーン樹脂封止材料はシリコーンベースポリマ一に
珪藻土、シリカ微粉末ガラス繊維、酸化アルミニウムな
どの補強充填剤そして硬化促進剤、離型剤、顔料などを
混合して作られる。Silicone resin sealing materials are made by mixing a silicone base polymer with reinforcing fillers such as diatomaceous earth, silica fine powder glass fiber, aluminum oxide, hardening accelerators, mold release agents, pigments, etc.
シリコーン樹脂封止材料はフェノール樹脂、ェポキシ樹
脂、ジアリルフタレート樹脂などと比較して、耐熱性、
耐炎性、電気特性、耐水性など諸性質にすぐれているた
め半導体装置を封止する樹脂として適用されている。し
かし樹脂封止型半導体装置は初期特性は良好であるが、
信頼性が劣る欠点がある。Silicone resin encapsulant materials have higher heat resistance,
Because it has excellent properties such as flame resistance, electrical properties, and water resistance, it is used as a resin for sealing semiconductor devices. However, although resin-sealed semiconductor devices have good initial characteristics,
It has the disadvantage of poor reliability.
特に高温電圧印加寿命試験や高温高温試験において、リ
ーク電流の増加や逆耐圧劣化が起き、信頼性が低い。一
例としてシリコーン樹脂封止材料を用いた500V級プ
レーナ型サィリスタの高湿電圧EO力ロ試験の結果の曲
型的な例を第1図に示す。第1図は30M固の供試サィ
リスタに12500の温度下でDC500Vの電圧を印
加して100脚寺間後にそれらのリーク電流の増加を測
定した場合の曲線であり、グラフの横瀬は試験時間T(
時間)は縦軸はリークIL(仏A)を夫々示している。
これら300個のサィリスタ中、100餌時間後のりー
ク電流が初期値の2倍以上になるものが3川固認められ
、明らかに不良品の発生率が高く信頼性に欠けていた(
グラフでは代表的な曲線を選択して示した)。先に、本
発明者等は、上記信頼性に欠ける原因としてシリコーン
樹脂封止材料中に含まれる水分が悪影響を与えているこ
とをつきとめた。そして、乾燥雰囲気中に放置しておく
か、または60〜100ooで加熱することにより充分
乾燥したシリコーン樹脂封止材料を用いて封止した半導
体装置では前記の高温電圧印加寿命試験における不良率
が低減することを見出した。しかしながら、シリコーン
樹脂封止材料を乾燥雰囲気中に放置しておいたり、60
〜10000で加熱した乾燥状態で半導体装置を樹脂封
止すると、スパイラルフローの低下や成形後にバリが多
く出るなどで成形作業性が悪し、。また、上述した従来
の欠点を改善するために、補強充填剤や雛型剤などを替
えたり、成形後湿気が入らないようオーバコーテイング
したり、ポストキュア(硬化)方法を改善したりしてい
るが、信頼性の向上はできなかった。In particular, in high-temperature voltage application life tests and high-temperature high-temperature tests, leakage current increases and reverse breakdown voltage deteriorates, resulting in low reliability. As an example, FIG. 1 shows a curved example of the results of a high humidity voltage EO power test of a 500V class planar thyristor using a silicone resin sealing material. Figure 1 is a curve obtained by applying a voltage of 500V DC to a 30M test thyristor at a temperature of 12500C and measuring the increase in leakage current after 100 cycles. (
time), and the vertical axis shows the leak IL (France A), respectively.
Among these 300 thyristors, there were three thyristors whose leakage current was more than twice the initial value after 100 feeding hours, clearly indicating a high incidence of defective products and a lack of reliability (
In the graph, representative curves are selected and shown). Previously, the present inventors have found that the cause of the lack of reliability is that moisture contained in the silicone resin sealing material has an adverse effect. In addition, semiconductor devices encapsulated using a silicone resin encapsulating material that has been sufficiently dried by leaving it in a dry atmosphere or heating at 60 to 100 oo have a lower defective rate in the above-mentioned high-temperature voltage application life test. I found out what to do. However, if the silicone resin sealing material is left in a dry atmosphere,
If a semiconductor device is sealed with resin in a dry state heated at ~10,000 ℃, molding workability is poor due to a decrease in spiral flow and a large number of burrs appearing after molding. In addition, in order to improve the conventional drawbacks mentioned above, we have changed the reinforcing filler and template agent, applied overcoating to prevent moisture from entering after molding, and improved the post-cure method. However, reliability could not be improved.
本発明の目的は、前記従来技術の欠点をなくし、信頼性
が高くかつ作業性が良好な樹脂封止型半導体装置を提供
することにある。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the prior art and provide a resin-sealed semiconductor device that is highly reliable and easy to work with.
本発明は、シリコーンベースポリマーと混合される補強
充填剤のシリカ微粉末中に含まれる水分含有量を12重
量%以下としたシリコーン樹脂封止材料を用いるこを特
徴としている。The present invention is characterized by using a silicone resin sealing material in which the water content contained in the fine silica powder as a reinforcing filler mixed with a silicone base polymer is 12% by weight or less.
本発明者等は、シリコーン樹脂封止材料を製造する際、
シリコーンベースポリマーと混合される補強充填剤のシ
リカ微粉末の吸湿性が高いことに着目した。The present inventors, when manufacturing a silicone resin sealing material,
We focused on the high hygroscopicity of fine silica powder, which is a reinforcing filler mixed with a silicone base polymer.
すなわち、シリカ粉末から吸着水分を除くためにこれを
45000に加熱したところ、シリカ粉末の重量が次第
に減少し、5時間の加熱で約28重量%の減少を示した
後略一定となった。That is, when the silica powder was heated to 45,000 ℃ to remove the adsorbed moisture from the silica powder, the weight of the silica powder gradually decreased, and after 5 hours of heating showed a decrease of about 28% by weight, it became approximately constant.
第2図は横軸に加熱時間TH(時間)を縦軸に重量減少
率Rw(重量%)をとってこの状態を示すグラフであり
、シリカ粉末には約26重量%の吸着水の含まれている
ことが判明した。そこで充分乾燥したシリカを用いてシ
リコーン樹脂封止材料を製造した。Figure 2 is a graph showing this state by plotting the heating time TH (hours) on the horizontal axis and the weight loss rate Rw (wt%) on the vertical axis.The silica powder contains approximately 26% by weight of adsorbed water. It turned out that Therefore, a silicone resin sealing material was manufactured using sufficiently dried silica.
このシリコーン樹脂封止材料を用いて半導体装置を樹脂
封止したところ、高温電圧印加寿命試験で安定な高信頼
性の半導体装置が得られることが判った。なお、本発明
で充分乾燥させたシリカ微粉末としては、非晶形シリカ
と、溶解石英粉、ヒュームシリカなどがある。When a semiconductor device was resin-sealed using this silicone resin sealing material, it was found that a stable and highly reliable semiconductor device could be obtained in a high-temperature voltage application life test. Incidentally, the silica fine powder sufficiently dried in the present invention includes amorphous silica, fused quartz powder, fume silica, and the like.
以下実施例により詳細に説明する。This will be explained in detail below using examples.
シリコーンベースポリマー10峠部、補強充填剤のシリ
カ微粉末18$部とガラス繊維12の部、それにわずか
の硬化促進剤、離型剤、顔料を加えて熱ロールミル上で
鹿練配合して、シリコーン樹脂封止材料を製造した。10 parts of silicone base polymer, 18 parts of silica fine powder as a reinforcing filler, 12 parts of glass fiber, and a small amount of hardening accelerator, mold release agent, and pigment are added and blended on a hot roll mill to make silicone. A resin sealing material was manufactured.
シリカ微粉末の前処理として、乾燥窒素ガス中で250
00で0〜4餌時間加熱し、重量減少量から測定した水
分含有量を0〜27%とした。これらのシリコーン樹脂
はスパイラルフローが34〜40インチ(成型条件17
5oo、56k9/c杉、3minの場合)で、いずれ
も良好に成形できた。上記方法で製造したシリコーン樹
脂封止材料を用いて、500V級プレーナ型サイリスタ
を樹脂封止し、信頼性を調べるため高温電圧印加寿命試
験した。従来例と同様に12500、DC500V、1
000時間の試験で、リーク電流の増加が初期値の2倍
以上のものを不良とした。第3図は機軸に充填剤として
のシリカ微粉末の水分含有量W(重量%)を縦軸に前記
定義の不良品の発生率Y(%)を夫々とって前記試験の
結果を示すグラフである。As a pretreatment of silica fine powder, 250
00 for 0 to 4 feeding hours, and the water content measured from the amount of weight loss was 0 to 27%. These silicone resins have a spiral flow of 34 to 40 inches (molding condition 17).
5oo, 56k9/c cedar, 3 min), all were successfully molded. A 500V class planar thyristor was resin-sealed using the silicone resin sealing material produced by the above method, and a high-temperature voltage application life test was conducted to examine reliability. 12500, DC500V, 1 as in the conventional example
In the 000-hour test, those whose leakage current increased by more than twice the initial value were judged to be defective. Figure 3 is a graph showing the results of the above test, with the water content W (wt%) of fine silica powder as a filler on the axis and the incidence Y (%) of defective products as defined above on the vertical axis. be.
図から明らかなように、シリカ微粉末の水分含有量がl
a重量%以上になると不良品の発生率が急増し、水分含
有量約15重量%では発生率は8%に達する。一方、水
分含有量12重量%以下では不良品の発生率は2%以下
である。以上のようにシリコ−ン樹脂封止材料中のシリ
カ粉末の水分含有量がブレーナ型サィリタの信頼性に大
きく影響し、本実施例に示すようにこのシリカ微粉末の
水分含有量をIZ重量%とすることによって不良品の発
生率を著しく低下させ得られた素子の信頼性を大幅に向
上させることができる。As is clear from the figure, the water content of fine silica powder is l
When the water content exceeds a weight %, the incidence of defective products increases rapidly, and when the water content is about 15 weight %, the incidence reaches 8%. On the other hand, when the water content is 12% by weight or less, the incidence of defective products is 2% or less. As mentioned above, the moisture content of the silica powder in the silicone resin sealing material greatly affects the reliability of the Brehner-type silitor, and as shown in this example, the moisture content of the fine silica powder is By doing so, it is possible to significantly reduce the incidence of defective products and significantly improve the reliability of the obtained device.
尚本実施例においては500V級プレーナ型サィリスタ
の樹脂封止の場合について説明したが、本発明はシリコ
ーン樹脂封止型の各種の半導体装置に一般的に適用する
ことができる。叙上のように本発明によれば信頼性の高
いシリコーン樹脂封止型半導体装置を得ることができる
。In this embodiment, a case where a 500V class planar type thyristor is resin-sealed has been described, but the present invention can be generally applied to various silicone resin-sealed semiconductor devices. As described above, according to the present invention, a highly reliable silicone resin-encapsulated semiconductor device can be obtained.
第1図は従来樹脂封止型半導体装置の高温電圧印加試験
による特性を示す図、第2図はシリカ微粉末中の水分含
有量の測定試験結果を示す図、第3図は本発明実施例に
おける高温電圧印加試験による特性を示す図である。
※’図
舞2図
第3図Figure 1 is a diagram showing the characteristics of a conventional resin-sealed semiconductor device obtained by a high-temperature voltage application test, Figure 2 is a diagram showing the results of a measurement test of water content in fine silica powder, and Figure 3 is an example of the present invention. FIG. 3 is a diagram showing characteristics obtained by a high temperature voltage application test. *'Zumai Figure 2 Figure 3
Claims (1)
填剤としてのシリカ粉末を用いて封止した樹脂封止型半
導体装置において、水分含有量12重量%以下の前記シ
リカ粉末を用いて封止したことを特徴とする前記樹脂封
止型半導体装置。1. In a resin-sealed semiconductor device sealed using a silicone resin as a sealing substrate material and a silica powder as a reinforcing filler, the sealing is performed using the silica powder with a water content of 12% by weight or less. The resin-sealed semiconductor device is characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54120770A JPS6040189B2 (en) | 1979-09-21 | 1979-09-21 | Resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54120770A JPS6040189B2 (en) | 1979-09-21 | 1979-09-21 | Resin-encapsulated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5645058A JPS5645058A (en) | 1981-04-24 |
| JPS6040189B2 true JPS6040189B2 (en) | 1985-09-10 |
Family
ID=14794565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54120770A Expired JPS6040189B2 (en) | 1979-09-21 | 1979-09-21 | Resin-encapsulated semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6040189B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2858166B2 (en) * | 1990-10-08 | 1999-02-17 | 株式会社日立製作所 | Semiconductor rectifier and full-wave rectifier using the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3759867A (en) * | 1972-03-02 | 1973-09-18 | Gen Electric | Molding compositions containing silanol free resins |
| JPS5137175B2 (en) * | 1973-05-09 | 1976-10-14 |
-
1979
- 1979-09-21 JP JP54120770A patent/JPS6040189B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5645058A (en) | 1981-04-24 |
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