JPS604608B2 - fm modulator - Google Patents
fm modulatorInfo
- Publication number
- JPS604608B2 JPS604608B2 JP17759181A JP17759181A JPS604608B2 JP S604608 B2 JPS604608 B2 JP S604608B2 JP 17759181 A JP17759181 A JP 17759181A JP 17759181 A JP17759181 A JP 17759181A JP S604608 B2 JPS604608 B2 JP S604608B2
- Authority
- JP
- Japan
- Prior art keywords
- variable capacitance
- temperature
- capacitance diode
- oscillation
- harmonics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C3/00—Angle modulation
- H03C3/10—Angle modulation by means of variable impedance
- H03C3/12—Angle modulation by means of variable impedance by means of a variable reactive element
- H03C3/22—Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode
- H03C3/222—Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode using bipolar transistors
Landscapes
- Amplitude Modulation (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
【発明の詳細な説明】
本発明は、発振周波数の基本波と高調波の振幅の比と位
相を制御して変調特性を直線化するとともに、温度によ
る変調特性の変化を補償したFM変調器に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an FM modulator that linearizes modulation characteristics by controlling the amplitude ratio and phase of the fundamental wave and harmonics of the oscillation frequency, and compensates for changes in modulation characteristics due to temperature. It is something.
可変容量ダイオードを用いたFM変調器において、その
変調器の入力電圧対発振周波数の変移の直線性(以下変
調器の直線性という)は、可変容量ダイオードの電圧対
容量特性に支配される。In an FM modulator using a variable capacitance diode, the linearity of the change in the input voltage of the modulator versus the oscillation frequency (hereinafter referred to as modulator linearity) is governed by the voltage versus capacitance characteristic of the variable capacitance diode.
いま可変容量ダイオードの電圧対容量特性をC=C。Now, the voltage vs. capacitance characteristic of a variable capacitance diode is C=C.
V。−n ‘1}ここにVo:動作電圧、Co=
動作点の容量n:動作点の容量変イゼ率で表わすと、こ
の可変容量ダイオードを変調器の共振回路の1部に使用
したとき、その発振周波数fは1 ■
f=布宿
ここに L:共振回路のィンダクタンス式‘1},‘2
1よりf=;方云v。V. -n '1} where Vo: operating voltage, Co=
Operating point capacitance n: When expressed as the capacitance change rate at the operating point, when this variable capacitance diode is used as part of the resonant circuit of a modulator, its oscillation frequency f is 1 ■ f=fusuku where L: Inductance formula of resonant circuit '1},'2
From 1, f=; direction v.
貴 職となり、n=2の条件を満たす範囲が広い程、変
調器の直線性は広帯域となる。The wider the range that satisfies the condition n=2, the wider the linearity of the modulator will be.
しかし従来この可変容量ダイオードを変調器に実装した
場合、変調器の直線性は、上式に示すように可変容量ダ
イオードの動作電圧Vo、動作点容量Coおよび動作点
の容量変化率nにより影響をうけ、n=2を広帯域に亘
つて満足させることはダイオード製作上困難であり、ま
たダイオード製作上の特性の不均一性があるため、大容
量FM変調器として使用するには、動作電圧の範囲を制
限するとか所要の発振周波数帯城に対し容量補償を行な
う等の方法が探られているが、いずれも広帯域に亘って
行うことは回路が複雑となり困難であった。これに対し
原発明である特許第1013758号では、前記変調器
の発振回路に発振周波数の高調波を発生する高調波発生
手段を具え、該発振周波数の基本波と高調波の振幅の比
と位相を、共振回路の一部に設けられた可変容量ダイオ
ードの容量変化率が2となるように制御して該基本波と
高調波を該可変容量ダィオード‘こ加えて、広帯域に亘
る直線性を得るFM変調器を提供している。However, when this variable capacitance diode is conventionally mounted in a modulator, the linearity of the modulator is affected by the operating voltage Vo, operating point capacitance Co, and capacitance change rate n of the variable capacitance diode, as shown in the above equation. However, it is difficult to satisfy n=2 over a wide band, and due to the non-uniformity of diode manufacturing characteristics, it is difficult to satisfy n = 2 over a wide band. Methods such as limiting the oscillation frequency band and performing capacitance compensation for the required oscillation frequency band have been explored, but it has been difficult to do so over a wide band because the circuit is complicated. On the other hand, in the original invention, Patent No. 1013758, the oscillation circuit of the modulator is provided with a harmonic generating means for generating harmonics of the oscillation frequency, and the amplitude ratio and phase of the fundamental wave and the harmonics of the oscillation frequency are is controlled so that the capacitance change rate of a variable capacitance diode provided in a part of the resonant circuit is 2, and the fundamental wave and harmonics are added to the variable capacitance diode to obtain linearity over a wide band. We offer FM modulators.
第1図は原発明のFM変調器の構成を示す説明図である
。第1図はハートレー形発振器の共振回路のキャパシタ
ンスを可変容量ダイオードとし、その動作電圧として変
調入力を与えたFM変調器である。FIG. 1 is an explanatory diagram showing the configuration of the FM modulator of the original invention. FIG. 1 shows an FM modulator in which the capacitance of the resonant circuit of a Hartley type oscillator is a variable capacitance diode, and a modulation input is applied as the operating voltage.
すなわち、トランジスタ2の電源(十10V)を供給し
たコレクタとべ−ス間に、コンデンサ7と接地を介して
可変容量ダイオード3とコンデンサ4の直列回路とィン
ダクタンス6の並列共振回路を接続し、このインダクタ
ンス6を介してバイアス(−1肌)を供給したェミッタ
に帰還させ、可変容量ダイオード3とコンデンサ4の間
に変調入力1を入れ、可変容量ダィオ−ド3の電圧対容
量特性によりFM変調を行なう。以上の従釆のFM変調
器の構成に対し、原発明の変調器は、ブロックで示すよ
うに共振回路に並列に高調波発生器8を挿入し、変調入
力1を分岐し直流増幅器9を経て高調波発生器8を制御
する。That is, a series circuit of a variable capacitance diode 3 and a capacitor 4 and a parallel resonant circuit of an inductance 6 are connected between the collector of the transistor 2, which is supplied with power (110V), and the base via the capacitor 7 and ground. A bias (-1 skin) is fed back to the emitter via an inductance 6, a modulation input 1 is inserted between a variable capacitance diode 3 and a capacitor 4, and FM modulation is performed by the voltage vs. capacitance characteristic of the variable capacitance diode 3. Let's do it. In contrast to the configuration of the above-mentioned secondary FM modulator, the modulator of the original invention inserts a harmonic generator 8 in parallel to the resonant circuit as shown in the block, and branches the modulation input 1 through the DC amplifier 9. Controls the harmonic generator 8.
さらにィンダクタンス6からェミツタへの帰還回路に振
幅制御回路IDを挿入するとともに、ェミッタのバイア
ス電源回路にェミッタ電流制御回路11を挿入する。こ
のような構成により、変調入力1より分岐した直流増幅
器9の出力レベルにより、高調波発生器8の発生するた
とえば第2次高調波成分の振幅と正負の位相を制御し、
これをィンダクタンス6を介して振幅制御回路1川こ送
りさらに第2次高調波の振幅を制御し、一方ェミッタ電
流制御回路11により発振周波数の振幅を制御すること
により、広帯域に亘る直線性を確保することができるも
のである以上の原発明のFM変調器においては、可変容
量ダイオード3の容量は変調入力電圧により変化するも
のとし、温度に対する補償が行なわれていない。Further, an amplitude control circuit ID is inserted into the feedback circuit from the inductance 6 to the emitter, and an emitter current control circuit 11 is inserted into the bias power supply circuit of the emitter. With such a configuration, the amplitude and positive/negative phase of, for example, the second harmonic component generated by the harmonic generator 8 are controlled by the output level of the DC amplifier 9 branched from the modulation input 1,
This is sent to the amplitude control circuit 1 via the inductance 6, which further controls the amplitude of the second harmonic, while the emitter current control circuit 11 controls the amplitude of the oscillation frequency, thereby achieving linearity over a wide band. In the FM modulator of the original invention described above, the capacitance of the variable capacitance diode 3 is assumed to change depending on the modulation input voltage, and compensation for temperature is not performed.
実際には第2図に示すように変調特性は周囲温度により
大幅に変化する。同図は穣鞠に周波数、たとえば14山
MHZ士20MHZにとり、縦軸に変調特性を微分特性
で示したもので、温度の変化をパラメータとして低温時
−500、常温時+2yo、高温時+55qCをプロッ
トしたものである。すなわち原発明における高調波成分
による改善を施した結果、25℃付近においてはほぼ平
坦な特性を示すのに対し、一500では120MHZ付
近の微分利得は高くなり傾斜は下降特性を示し、逆に十
55ooは120MH2付近の微分利得は低下するが煩
斜は上昇特性に転ずる。この変調器の温度による変調特
性の直線性の劣化は、可変容量ダイオードたとえばパラ
クタの温度特性が支配的である。すなわち低温ではパラ
クタのQの増加による発振振幅の増大によるものであり
、高温ではそのQの低下による発振振幅の低下によるも
のである。本発明の目的は発振周波数の基本波と高調波
の振幅の比と位相を制御して変調特性を直線化するとと
もに温度による変調特性の変化を補償したFM変調器を
提供することである。In reality, as shown in FIG. 2, the modulation characteristics vary significantly depending on the ambient temperature. The figure shows the modulation characteristic as a differential characteristic on the vertical axis, taking the frequency, for example, 14 MHZ and 20 MHZ, and plots -500 at low temperature, +2yo at normal temperature, and +55qC at high temperature with temperature change as a parameter. This is what I did. In other words, as a result of the improvement by the harmonic component in the original invention, the characteristic is almost flat near 25°C, whereas at -500, the differential gain near 120 MHz is high and the slope shows a falling characteristic, and conversely, the characteristic is not sufficiently high. For 55oo, the differential gain near 120MH2 decreases, but the slope changes to an increasing characteristic. The linearity deterioration of the modulation characteristics of the modulator due to temperature is dominated by the temperature characteristics of a variable capacitance diode, such as a paractor. That is, at low temperatures, the oscillation amplitude increases due to an increase in the Q of the parameter, and at high temperatures, the oscillation amplitude decreases due to a decrease in Q. An object of the present invention is to provide an FM modulator that linearizes modulation characteristics by controlling the amplitude ratio and phase of the fundamental wave and harmonics of the oscillation frequency and compensates for changes in the modulation characteristics due to temperature.
前記目的を達成するため、本発明のFM変調器は、発振
回路の共振回路の1部に可変容量ダイオードを設け該可
変容量ダイオードの容量を外部電圧により変化させ発振
周波数を変移させるFM変調器において、前記発振回路
の共振回路を含む帰還ループ内に前記発振周波数の高調
波を発生する高調波発生器、該発振周波数の基本波と高
調波の振幅の比と位相を制御する振幅制御回路を具え、
該発振周波数の基本波と高調波の振幅の比と位相を前記
可変容量ダイオードの容量変化率が2となるように制御
して該基本波と高調波を前記可変容量ダィオード}こ加
えるとともに、前記発振回路の発振素子への帰還点のバ
イアス電圧を温度に対応して変化させるバイアス制御回
路を具えたことを特徴とするものであり、さらに前記振
幅制御回路が温度により変化するバイアス電圧で動作す
る可変容量ダイオードより成る温度補償部を具えたこと
を特徴とするものである。In order to achieve the above object, the FM modulator of the present invention includes a variable capacitance diode in a part of the resonant circuit of the oscillation circuit, and the capacitance of the variable capacitance diode is changed by an external voltage to shift the oscillation frequency. , a harmonic generator that generates harmonics of the oscillation frequency in a feedback loop including a resonant circuit of the oscillation circuit, and an amplitude control circuit that controls the amplitude ratio and phase of the fundamental wave and the harmonics of the oscillation frequency. ,
The fundamental wave and the harmonics are added to the variable capacitance diode by controlling the amplitude ratio and phase of the fundamental wave and harmonics of the oscillation frequency so that the capacitance change rate of the variable capacitance diode is 2, and The device is characterized by comprising a bias control circuit that changes a bias voltage at a feedback point to an oscillation element of an oscillation circuit in accordance with temperature, and further, the amplitude control circuit operates with a bias voltage that changes depending on temperature. The device is characterized in that it includes a temperature compensator made of a variable capacitance diode.
以下本発明の原理と実施例につき詳述する。The principle and embodiments of the present invention will be explained in detail below.
いま、可変容量ダイオードの電圧対容量特性が{1)式
で表されるものとし、この関係式をバラクタの動作点電
圧Voから変位電圧vによって多項式で表示するととな
る。Now, it is assumed that the voltage versus capacitance characteristic of the variable capacitance diode is expressed by the equation {1), and this relational expression is expressed by a polynomial from the operating point voltage Vo of the varactor to the displacement voltage v.
この可変容量ダィオ一日こvなる変位電圧が印加された
とき流れる電流iはi=最(VC)【51
容量Cが一定、v=a,cos のtであるときは電流
iはiニ−CalのSin のt
{6)(C一定)容量値は
となる。When a displacement voltage of v is applied to this variable capacitor diode, the current i that flows is i = maximum (VC) [51 When the capacitance C is constant and v = a, cos t, the current i is i - Cal Sin t
{6) (C constant) The capacitance value is.
次に容量Cが一定でない場合は式‘4}を式【5}‘こ
代入し式‘6rより
変位電圧vが高調波を含み
ここにap:p次高調波振幅
であるときの電流は式■を式■に代入すれば得られる。Next, if the capacitance C is not constant, substitute formula '4} into formula [5}', and from formula '6r, when the displacement voltage v includes harmonics and the ap:p harmonic amplitude is here, the current is calculated by the formula It can be obtained by substituting ■ into formula ■.
いま、簡単に式‘10を2次高調波までを考慮してVニ
alCOS のt十a2COS2のt (11
)としたときの電流を計算すると{91式より一I;a
;FalGin■t)X〔1一肌2V。Now, by simply using Equation '10 and considering up to the second harmonic, we can calculate the equation t (11
), the current is calculated as {from formula 91, I; a
;FalGin■t)X [1 one skin 2V.
・−1十善(a字+勿蓬)V。−2n(n+・)一合2
雌a2舷茎)V;3n(n+1)(n十2)〕十2(S
inのt)XG2−享a字‐V61n+暮(泌事を十a
茎)V62n(n+・)−夏(勿三十a亭a妻)V63
n(n十1)(n+2)〕十3(Sinのt)X〔一a
・をV61n+きくa字十$雛)V62nくn+.)−
量(a字a2十a・a茎)V53nくn十1)(n+2
)〕 (12)式(12)において基本波のみに着目す
れば基本波 に対する容量値CIは式【61′からC
=Cy6n{・一na2V6・十責(a字十ぞ≧)V;
2n(n十1)−壱(傘亭‐a2十$茎)V63n(n
+1)(n+2)} (13)すなわち可変容量ダィオ
ード‘こかかる電圧が基本波のみである場合の動作電圧
に対する容量値は式‘9)′で示され、可変容量ダイオ
ードにかかる電圧が基本波のほかに2次高調波を含む場
合の動作電圧に対する容量値は式(13)で示される。
一般に容量変化率n′はと表現できる。・-1 ten good (a character + muyo) V. -2n(n+・)1go2
female a2 stern) V; 3n (n+1) (n 12)] 12 (S
in's t)
Stem) V62n (n+・)-Summer (Natsusantoa-tei a wife) V63
n(n11)(n+2)]13(t of Sin)X[1a
・V61n+Kiku a character ten dollar doll) V62nkun+. )−
Amount (a character a20a・a stalk) V53n x n1) (n+2
)] (12) If we focus only on the fundamental wave in equation (12), the capacitance value CI for the fundamental wave can be calculated from equation [61' to C
=Cy6n{・One na2V6・Jusaku (a character Juzo ≧) V;
2n (n11) - 1 (Kasa-tei - a20 $ stem) V63n (n
+1)(n+2)} (13) In other words, the capacitance value for the operating voltage when the voltage applied to the variable capacitance diode is only the fundamental wave is shown by equation 9), and the voltage applied to the variable capacitance diode is equal to the fundamental wave. The capacitance value with respect to the operating voltage when second harmonics are also included is shown by equation (13).
Generally, the capacitance change rate n' can be expressed as follows.
このときC=Cy心でn′=n
(15)となり、(14)式が妥当であることが
わかる。In this case, C=Cy center and n'=n
(15), and it can be seen that equation (14) is valid.
式(13)を式(14)に代入すれば可変容量ダイオー
ド基本波と高調波の合成波が印加された場合の容量変化
率n′が求められる。すなわちいま2次高調波に対する
n′の変化をみるため、バラクタの特性をn=2,al
/Vo=1/3としてa2/Voを変化した場合のn′
の変化の1例を示すと第3図のごとくなる。By substituting equation (13) into equation (14), the capacitance change rate n' when a composite wave of the variable capacitance diode fundamental wave and harmonics is applied can be obtained. In other words, in order to see the change in n' with respect to the second harmonic, the characteristics of the varactor are set to n=2, al
n' when changing a2/Vo with /Vo=1/3
An example of the change in is shown in Fig. 3.
第3図より a2>0のときはn′<nvo a2<0のときはn′>nv。From Figure 3 When a2>0, n'<nvo When a2<0, n'>nv.
ここでnvoは可変容量ダイオードに高調波が印加され
ていない場合の動作電圧Vo点での容量変化率を示す。Here, nvo indicates the rate of change in capacitance at the operating voltage Vo point when no harmonics are applied to the variable capacitance diode.
すなわち、2次高調波の振幅が正ならば容量変化率は減
少し、負ならば容量変化率は増加する。従って2次高調
波成分の振幅と位相により容量変化率が増減することが
わかる。従ってこの原理を利用し、温度によるnの変化
を、a2′Voすなわち基本波と2次高周波の振幅の比
あるいはさらに正負の位相を制御することにより、原発
明の場合と同様に変調特性を直線化することができる。That is, if the amplitude of the second harmonic is positive, the capacitance change rate decreases, and if it is negative, the capacitance change rate increases. Therefore, it can be seen that the capacitance change rate increases or decreases depending on the amplitude and phase of the second harmonic component. Therefore, by utilizing this principle and controlling the change in n due to temperature by controlling a2'Vo, that is, the ratio of the amplitudes of the fundamental wave and the secondary high frequency, or even the positive and negative phases, the modulation characteristics can be made linear as in the case of the original invention. can be converted into
本発明においては、原発明の回路に付加して温度に応動
して前記制御を行なう回路を設ければよい。温度による
変調特性(微分特性)の変化は、第2図に示すように、
低温においては下降特性を高温においては上昇特性を示
す1次額斜の変化と、各特性の両側部における曲率の変
化に分けられる。In the present invention, a circuit that performs the control in response to temperature may be provided in addition to the circuit of the original invention. The change in modulation characteristics (differential characteristics) due to temperature is as shown in Figure 2.
It can be divided into a change in the primary forehead slope, which shows a downward characteristic at low temperatures and an upward characteristic at high temperatures, and a change in curvature on both sides of each characteristic.
1次傾斜の変化に対しては、第1図の発振回路の発振素
子の工ミツタバィアス回路に、サー‐ミスタのような半
導体感温可変抵抗素子を用いることにより、第4図に示
すように、発振回路の発振素子への帰還点のバイアス電
圧をパラメータとした場合、温度の高低に対応して第2
図の変調特性、すなわち周波数−微分特性の傾斜と逆の
傾斜をもたせることができる。To deal with changes in the primary slope, as shown in FIG. 4, by using a semiconductor temperature-sensitive variable resistance element such as a thermistor in the bias circuit of the oscillation element of the oscillation circuit shown in FIG. When the bias voltage at the feedback point to the oscillation element of the oscillation circuit is used as a parameter, the second
It is possible to provide a slope opposite to that of the modulation characteristic shown in the figure, that is, the frequency-differential characteristic.
たとえば低温−5℃では低いバイアス電圧(1.5Vr
ms)で上昇特性を、常温十25qoでは中間バイアス
電圧(2.1Vてms)で平坦特性を、高温+55qo
では高いバイアス電圧(2.則皿s)で下降特性をもた
せることが可能である。この場合に共振回路の可変容量
ダイオードは、ほぼ常温に保持した場合の効果を示した
ものである。一方曲率の変化は、帰還回路に挿入した第
1図の振幅制御回路101こ直列に温度補償用の可変容
量ダイオードたとえばバラクタを新たに設け、その両端
に前述したような感温可変抵抗素子を介してバイアス電
圧を加えて補償が行なわれる。For example, at a low temperature of -5℃, a low bias voltage (1.5Vr
ms), a rising characteristic at room temperature 125 qo, a flat characteristic at intermediate bias voltage (2.1 V ms), and a high temperature +55 qo.
In this case, it is possible to provide a falling characteristic with a high bias voltage (2. law plate s). In this case, the effect when the variable capacitance diode of the resonant circuit is maintained at approximately room temperature is shown. On the other hand, the change in curvature can be controlled by adding a variable capacitance diode, for example a varactor, for temperature compensation in series with the amplitude control circuit 101 of FIG. Compensation is performed by applying a bias voltage.
すなわち第5図に示すように、たとえば常温+25oo
(容量3桝F)で平坦特性を示し、低温−5℃(容量3
3pF)では両側の曲率が大きくなり、高温+55℃(
容量47pF)では両側の曲率は小さく現われる。従っ
て前述の1次傾斜の補償と合成すれば、周囲温度の変化
に拘らず常に変調特性の直線性を確保することができる
。しかし変調特性の両側の曲率の変化が余り大きくない
場合には、1次額斜の補償のみで十分平坦な広帯域を確
保することができる。第6図は以上の原理に従った本発
明の実施例の構成を示す説明図である。That is, as shown in FIG. 5, for example, at room temperature +25 oo
(capacity: 3F), exhibits flat characteristics at low temperature -5℃ (capacity: 3F),
3pF), the curvature on both sides increases, and the temperature rises to +55℃ (
With a capacitance of 47 pF), the curvature on both sides appears small. Therefore, by combining this with the compensation of the above-mentioned first-order slope, it is possible to always ensure the linearity of the modulation characteristics regardless of changes in the ambient temperature. However, if the change in the curvature on both sides of the modulation characteristic is not very large, a sufficiently flat wide band can be ensured only by compensating for the primary forehead slope. FIG. 6 is an explanatory diagram showing the configuration of an embodiment of the present invention according to the above principle.
同図において第1図と異なる点は、ェミッ夕電流制御回
路11の代りに温度補償用のバイアス制御回路21を具
え、さらに振幅制御回路10に温度補償部22を付加し
たことである。バイアス制御回路21は前述のようにサ
ーミスタのような感温可変抵抗素子をェミッタバィァス
回路に直列に挿入したもので、共振回路の可変容量ダイ
オードを常温に保持した場合第4図のような変調特性を
有するものとすれば、第2図に示す温度の変化による1
次傾斜を補償することができる。原発明における振幅制
御回路10は、たとえば可変容量ダイオードとダイオー
ドを直列に接続し、それぞれに所定のバイアス電圧で動
作させたものが用いられる。This figure differs from FIG. 1 in that a bias control circuit 21 for temperature compensation is provided in place of the emitter current control circuit 11, and a temperature compensator 22 is added to the amplitude control circuit 10. As mentioned above, the bias control circuit 21 has a temperature-sensitive variable resistance element such as a thermistor inserted in series with the emitter bias circuit, and when the variable capacitance diode of the resonant circuit is kept at room temperature, it has the modulation characteristics as shown in Figure 4. 1 due to the temperature change shown in Figure 2.
Next, the slope can be compensated. The amplitude control circuit 10 in the original invention uses, for example, a variable capacitance diode and a diode connected in series, each of which is operated with a predetermined bias voltage.
本発明の温度補償部22はこれに直列に接したものであ
り、その1例を第7図に示すように、両端をコンデンサ
で結合した可変容量ダオード31たとえばバラクタの両
端に、チョークコイル321,322を介し、サーミス
タのような感温可変抵抗素子33を通し端子34よりバ
イアス電圧が与えられ、第4図と同条件で第5図に示す
ような特性をもたせることにより、変調特性の両側の曲
率を補償することができる。この場合、本発明の温度補
償部22の可変容量ダイオード31は、振幅制御回路1
0内の可変容量ダイオードと同様の機能を有し、かつ温
度補償機能をもたせたものであるから、これらの可変容
量ダイオードを共通にして、常温における変調特性の直
線化のためのバイアス抵抗素子と、温度補償のための感
温可変抵抗素子とを直列接続して適当なバイアス電圧を
印加してもよい。以上説明したように、本発明は原発明
における、発振周波数の基本波と高調波の振幅の比を制
御することによる変調特性の直線化に加えて、さらにそ
の温度補償を可能としたものである。The temperature compensator 22 of the present invention is connected in series with this, and an example thereof is shown in FIG. 322, a bias voltage is applied from the terminal 34 through the temperature-sensitive variable resistance element 33 such as a thermistor, and by providing the characteristics shown in FIG. 5 under the same conditions as in FIG. 4, both sides of the modulation characteristic are Curvature can be compensated. In this case, the variable capacitance diode 31 of the temperature compensator 22 of the present invention is connected to the amplitude control circuit 1.
These variable capacitance diodes have the same function as the variable capacitance diodes in 0, and also have a temperature compensation function, so these variable capacitance diodes can be used as a bias resistance element for linearizing the modulation characteristics at room temperature. , and a temperature-sensitive variable resistance element for temperature compensation may be connected in series to apply an appropriate bias voltage. As explained above, the present invention not only linearizes the modulation characteristics by controlling the amplitude ratio of the fundamental wave and harmonics of the oscillation frequency in the original invention, but also makes it possible to perform temperature compensation. .
すなわち温度変化に基づく変調特性の1次額斜の変化を
、感温可変抵抗素子を含むバイアス制御回路により、曲
率の変化を、感温可変抵抗素子を含む振幅制御回路の温
度補償織こより補償することができるものであり、温度
変化における変調特性の変化の程度によって、1次額斜
の補償のみ十分な場合がある。追加の関係
本発明は、特許第1013758号555283の追加
発明である。In other words, changes in the primary slope of the modulation characteristic due to temperature changes are compensated for by a bias control circuit including a temperature-sensitive variable resistance element, and changes in curvature are compensated for by a temperature compensation fabric of an amplitude control circuit including a temperature-sensitive variable resistance element. Depending on the degree of change in modulation characteristics due to temperature change, only compensation for the primary forehead slope may be sufficient. Additional Relationship The present invention is an additional invention of Japanese Patent No. 1013758 No. 555283.
原発明の主要部を構成する発振周波数の基本波と高調波
を発生する手段、該発振周波数の基本波と高調波の振幅
の比を制御する手段とを具え、該発振周波数の基本波と
高周波の振幅の比を可変容量ダイオードの容量変化率が
2となるように制御して該基本波と高調波を前記可変容
量ダィオード‘こ加えるとともに、本発明では発振回路
の発振素子への帰還点のバイアス電圧を温度に対応して
変化させるバイアス制御回路を設けた。The invention comprises means for generating a fundamental wave and harmonics of an oscillation frequency, and means for controlling the amplitude ratio of the fundamental wave and harmonics of the oscillation frequency, which constitute the main part of the original invention. The fundamental wave and harmonics are added to the variable capacitance diode by controlling the amplitude ratio of the variable capacitance diode so that the capacitance change rate of the variable capacitance diode is 2. In addition, in the present invention, the feedback point to the oscillation element of the oscillation circuit is A bias control circuit was provided to change the bias voltage in response to temperature.
第1図は原発明におけるFM変調器の説明図、第2図は
温度に対する変調特性の変化の説明図、第3図〜第5図
は本発明の原理説明図、第6図は本発明の実施例の構成
を示す説明図、第7図は第6図の実施例の要部詳細図で
あり、図中、1は変調入力、2はトランジスタ、3は可
変容量ダイオード、4,7はコンデンサ、6はインダク
タンス、8は高調波発生器、9は直流増幅器、10‘ょ
振幅制御回路、21はバイアス制御回路、22は温度補
償部を示す。
オー図
オ2図
オ3図
オ4図
オ5図
オ6図
オフ図Fig. 1 is an explanatory diagram of the FM modulator in the original invention, Fig. 2 is an explanatory diagram of changes in modulation characteristics with respect to temperature, Figs. An explanatory diagram showing the configuration of the embodiment. FIG. 7 is a detailed view of the main parts of the embodiment of FIG. , 6 is an inductance, 8 is a harmonic generator, 9 is a DC amplifier, 10' is an amplitude control circuit, 21 is a bias control circuit, and 22 is a temperature compensator. O figure O figure O 2 figure O figure 3 figure O figure O 4 figure O figure 5 figure O figure 6 off figure
Claims (1)
設け該可変容量ダイオードの容量を外部電圧により変化
させ発振周波数を変移させるFM変調器において、前記
発振回路の共振回路を含む帰還ループ内に前記発振周波
数の高調波を発生する高調波発生器、該発振周波数の基
本波と高調波の振幅の比と位相を制御する振幅制御回路
を具え、該発振周波数の基本波と高調波の振幅の比と位
相を前記可変容量ダイオードの容量変化率が2となるよ
うに制御して該基本波と高調波を前記可変容量ダイオー
ドに加えるとともに、前記発振回路の発振素子への帰還
点のバイアス電圧を温度に対応して変化させるバイアス
制御回路を具えたことを特徴とするFM変調器。 2 発振回路の共振回路の1部に可変容量ダイオードを
設け該可変容量ダイオードの容量を外部電圧により変化
させ発振周波数を変移させるFM変調器において、前記
発振回路の共振回路を含む帰還ループ内に前記発振周波
数の高調波を発生する高調波発生器、該発振周波数の基
本波と高調波の振幅の比と位相を制御する振幅制御回路
を具え、該発振周波数の基本波と高調波の振幅の比と位
相を前記可変容量ダイオードの容量変化率が2となるよ
うに制御して該基本波と高調波を前記可変容量ダイオー
ドに加えるとともに、前記発振回路の発振素子への帰還
点のバイアス電圧を温度に対応して変化させるバイアス
制御回路を具え、かつ前記振幅制御回路が温度により変
化するバイアス電圧で動作する可変容量ダイオードより
成る温度補償部を具えたことを特徴とするFM変調器。[Scope of Claims] 1. In an FM modulator in which a variable capacitance diode is provided in a part of a resonant circuit of an oscillation circuit and the capacitance of the variable capacitance diode is changed by an external voltage to shift the oscillation frequency, the resonant circuit of the oscillation circuit is a harmonic generator that generates harmonics of the oscillation frequency; an amplitude control circuit that controls the amplitude ratio and phase of the fundamental wave and the harmonics of the oscillation frequency; The fundamental wave and harmonics are added to the variable capacitance diode by controlling the amplitude ratio and phase of the harmonics so that the capacitance change rate of the variable capacitance diode is 2, and the feedback to the oscillation element of the oscillation circuit is An FM modulator comprising a bias control circuit that changes a bias voltage at a point in accordance with temperature. 2. In an FM modulator in which a variable capacitance diode is provided in a part of the resonant circuit of the oscillation circuit and the capacitance of the variable capacitance diode is changed by an external voltage to shift the oscillation frequency, the above-mentioned a harmonic generator that generates harmonics of an oscillation frequency; an amplitude control circuit that controls the ratio and phase of the amplitudes of the fundamental wave and harmonics of the oscillation frequency; The fundamental wave and harmonics are controlled to the variable capacitance diode so that the rate of change in capacitance of the variable capacitance diode is 2, and the bias voltage at the feedback point to the oscillation element of the oscillation circuit is controlled by changing the temperature. 1. An FM modulator, comprising: a bias control circuit that changes the bias voltage in accordance with the amplitude control circuit; and wherein the amplitude control circuit comprises a temperature compensator made of a variable capacitance diode that operates with a bias voltage that changes depending on temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17759181A JPS604608B2 (en) | 1981-11-05 | 1981-11-05 | fm modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17759181A JPS604608B2 (en) | 1981-11-05 | 1981-11-05 | fm modulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57107612A JPS57107612A (en) | 1982-07-05 |
| JPS604608B2 true JPS604608B2 (en) | 1985-02-05 |
Family
ID=16033663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17759181A Expired JPS604608B2 (en) | 1981-11-05 | 1981-11-05 | fm modulator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS604608B2 (en) |
-
1981
- 1981-11-05 JP JP17759181A patent/JPS604608B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57107612A (en) | 1982-07-05 |
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