Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS604609B2 - fm modulator - Google Patents
[go: Go Back, main page]

JPS604609B2 - fm modulator - Google Patents

fm modulator

Info

Publication number
JPS604609B2
JPS604609B2 JP17759281A JP17759281A JPS604609B2 JP S604609 B2 JPS604609 B2 JP S604609B2 JP 17759281 A JP17759281 A JP 17759281A JP 17759281 A JP17759281 A JP 17759281A JP S604609 B2 JPS604609 B2 JP S604609B2
Authority
JP
Japan
Prior art keywords
temperature
variable capacitance
diode
capacitance diode
modulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17759281A
Other languages
Japanese (ja)
Other versions
JPS57107613A (en
Inventor
勇夫 中沢
敦 楳田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17759281A priority Critical patent/JPS604609B2/en
Publication of JPS57107613A publication Critical patent/JPS57107613A/en
Publication of JPS604609B2 publication Critical patent/JPS604609B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03CMODULATION
    • H03C3/00Angle modulation
    • H03C3/10Angle modulation by means of variable impedance
    • H03C3/12Angle modulation by means of variable impedance by means of a variable reactive element
    • H03C3/22Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode
    • H03C3/222Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode using bipolar transistors

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Transmitters (AREA)

Description

【発明の詳細な説明】 本発明は、発振周波数の基本波と高周波の振幅の比と位
相を制御して変調特性を直線化するとともに、温度によ
る変調特性の変化を補償したFM変調器に関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an FM modulator that linearizes modulation characteristics by controlling the amplitude ratio and phase of the fundamental wave and high frequency of the oscillation frequency, and compensates for changes in modulation characteristics due to temperature. It is.

可変容量ダイオードを用いたFM変調器において、その
変調器の入力電圧対発振周波数の変移の直線性(以下変
調器の直線性という)は、可変容量ダイオードの電圧対
容量特性に支配されている。
In an FM modulator using a variable capacitance diode, the linearity of the change in the input voltage of the modulator versus the oscillation frequency (hereinafter referred to as modulator linearity) is governed by the voltage versus capacitance characteristic of the variable capacitance diode.

いま可変容量ダイオードの電圧対容量特性をC=C。V
。‐n ‘11ここに
Vo:動作電圧Co:動作点の容量 n:動作点の容量変化率 で表わすと、この可変容量ダイオードを変調器の共振回
路の1部に使用したとき、その発振周波数fは1
【2} f=宏力云 ここにL:共振回路のインダクタンス 式‘11,■より f=点V。
Now, the voltage vs. capacitance characteristic of a variable capacitance diode is C=C. V
. -n '11 where Vo: operating voltage Co: capacitance at operating point n: rate of change in capacitance at operating point When this variable capacitance diode is used as part of the resonant circuit of a modulator, its oscillation frequency f is 1
[2} f = Hiroki where L: Inductance of the resonant circuit From formula '11, ■, f = point V.

蓑 ‘3’となり、n=2の条件を満たす範囲が広い程
、変調器の直線性は広帯域となる。
The value becomes '3', and the wider the range that satisfies the condition of n=2, the wider the linearity of the modulator becomes.

しかし従来この可変容量ダイオードを変調器に実装した
場合、変調器の直線曲ま、上式に示すように可変容量ダ
イオードの動作電圧Vo、動作点容量Coおよび動作点
の容量変化率nにより影響をうけ、n=2を広帯域に亘
って満足させることはダイオード製作上困難であり、ま
たダイオード製作上の特性の不均一性があるため、大容
量FM変調器として使用するには、動作電圧の範囲を制
限するとか所要の発振周波数帯城に対し容量補償を行な
う等の方法が探られているが、いずれも広帯域に亘つて
行なうことは回路が複雑となり困難であった。これに対
し原発明である特許第1013758号では、前記変調
器の発振回路に発振周波数の高調波を発生する手段と、
該発振周波数の基本波と高調波の振幅の比と位相を変化
する手段を具え、該発振周波数の変移に対応して、該発
振周波数の基本波と高周波の振幅の比と位相を、共振回
路の1部に設けられた可変容量ダイオードの容量変化率
が2となるように制御して該基本波と高調波を該可変容
量ダィオード‘こ加えて、広帯域に亘る直線性を得るF
M変調器を提供している。
However, when this variable capacitance diode is conventionally mounted in a modulator, the linear curve of the modulator is affected by the variable capacitance diode's operating voltage Vo, operating point capacitance Co, and operating point capacitance change rate n, as shown in the above equation. However, it is difficult to satisfy n=2 over a wide band in terms of diode fabrication, and due to the non-uniformity of diode fabrication characteristics, it is difficult to satisfy n = 2 over a wide band. Methods such as limiting the oscillation frequency band or performing capacitance compensation for the required oscillation frequency band have been explored, but it has been difficult to do so over a wide band because the circuit is complicated. On the other hand, the original invention, Japanese Patent No. 1013758, includes means for generating harmonics of the oscillation frequency in the oscillation circuit of the modulator;
a resonant circuit, comprising means for changing the amplitude ratio and phase of the fundamental wave and harmonics of the oscillation frequency; By controlling the capacitance change rate of the variable capacitance diode provided in a part of the variable capacitance diode to be 2, and adding the fundamental wave and harmonics to the variable capacitance diode', linearity over a wide band is obtained.
We offer M modulators.

第1図は原発明のFM変調器の構成を示す説明図である
FIG. 1 is an explanatory diagram showing the configuration of the FM modulator of the original invention.

第1図はハートレー形発振器の共振回路のキャパシタン
スを可変容量ダイオードとし、その動作電圧として変調
入力を与えたFM変調器である。
FIG. 1 shows an FM modulator in which the capacitance of the resonant circuit of a Hartley type oscillator is a variable capacitance diode, and a modulation input is applied as the operating voltage.

すなわち、トランジスタ2の電源(十10V)を供給し
たコレクタとべ‐ス間に、コンデンサ7と接地を介して
可変容量ダイオード3とコンデンサ4の直列回路とィン
ダクタンス6の並列共振回路を接続し、このィンダクタ
ンス6を介してバイアス(一10V)を供給したェミッ
タに帰還させ、可変容量ダイオード3とコンデンサ4の
間に変調入力1を入れ、可変容量ダイオード3の電圧対
容量特性によりFM変調を行なう。以上の従来のFM変
調器の構成に対し、原発明の変調器は、ブロックで示す
ように共振回路に並列に高調波発生器8を挿入し、変調
入力1を分岐し直流増幅器9を経て高調波発生器8を制
御する。
That is, a series circuit of a variable capacitance diode 3 and a capacitor 4 and a parallel resonant circuit of an inductance 6 are connected between the collector of the transistor 2, which is supplied with power (110 V), and the base via the capacitor 7 and ground. A bias (-10V) is fed back to the emitter via an inductance 6, and a modulation input 1 is inserted between a variable capacitance diode 3 and a capacitor 4, and FM modulation is performed by the voltage versus capacitance characteristic of the variable capacitance diode 3. In contrast to the configuration of the conventional FM modulator described above, the modulator of the original invention inserts a harmonic generator 8 in parallel to the resonant circuit as shown in the block, and branches the modulation input 1 and passes it through the DC amplifier 9 to generate harmonics. The wave generator 8 is controlled.

さらにィンダクタンス6からェミツタへの帰還回路に振
幅制御回路10を挿入するとともに、ヱミッタのバイア
ス電源回路にェミツタ電流制御回路11を挿入する。こ
のような構成により、変調入力1より分岐した直流増幅
器9の出力レベルにより、高調波発生器8の発生するた
とえば第2次高調波成分の振幅と正負の位相を制御し、
これをィンダクタンス6を介して振幅制御回路101こ
送り、一方ェミッタ電流制御回路11により発振周波数
の振幅を制御し、前記振幅制御回路10‘こおいてさら
に基本波に対する高調波の振幅の比を制御することによ
り、広帯域に亘る直線性を確保することができるもので
ある。
Furthermore, an amplitude control circuit 10 is inserted into the feedback circuit from the inductance 6 to the emitter, and an emitter current control circuit 11 is inserted into the bias power supply circuit of the emitter. With such a configuration, the amplitude and positive/negative phase of, for example, the second harmonic component generated by the harmonic generator 8 are controlled by the output level of the DC amplifier 9 branched from the modulation input 1,
This is sent to the amplitude control circuit 101 via the inductance 6, while the emitter current control circuit 11 controls the amplitude of the oscillation frequency, and the amplitude control circuit 10' further controls the ratio of the amplitude of the harmonic to the fundamental wave. By controlling this, linearity over a wide band can be ensured.

以上の原発明のFM変調器においては、可変容量ダイオ
ード3の容量は変調入力電圧により変化するものとし、
温度に対する補償が行なわれていない。
In the FM modulator of the original invention described above, the capacitance of the variable capacitance diode 3 is assumed to change depending on the modulation input voltage,
No compensation for temperature.

実際には第2図に示すように変調特性は周囲温度により
大幅に変化する。同図は横軸に周波数、たとえば14の
MHZ士20MHZにとり、縦軸に変調特性を傭分特性
で表示したもので、温度の変化をパラメータとして低温
時−500、常温時+25℃、高温時+55qoをプロ
ットしたものである。すなわち原発明における高調波成
分による改善を施した結果、250C付近においてはほ
ぼ平坦な特性を示すのに対し、一5℃では120MHZ
付近の微分利得は高くなり傾斜は下降特性を示し、逆に
十55午○では120MHz付近の微分利得は低下する
が傾斜は上昇得性に転ずる。この変調器の温度による変
調特性の直線性の劣化は「可変容量ダイオードたとえば
バラクタの温度特性が支配的である。すなわち低温では
バラクタのQの増加による発振振幅の増大によるもので
あり、高温ではそのQの低下による発振振幅の低下によ
るものである。本発明の目的は基本波と高調波の振幅の
比と位相を制御して変調特性を直線化するとともに、温
度による変調特性を補償したFM変調器を提供すること
である。前記目的を達成するため、本発明のFM変調器
は、発振回路の共振回路の1部に可変容量ダイオードを
設け該可変容量ダイオードの容量を外部電圧により変化
させ発振周波数を変移させるFM変調器において、前記
発振回路の共振回路を含む帰還ループ内に前記発振周波
数の高調波を発生する高調波発生器と該基本波と高調波
の振幅の比と位相を制御する振幅制御回路を具え、前記
発振周波数の基本波と高調波の振幅の比と位相を前記可
変容量ダイオードの容量変化率が2となるように制御し
て該基本波と高調波を前記可変容量ダイオードに加える
とともに、前記振幅制御回路が温度により変化するバイ
アス電圧によりそれぞれ動作するダイオードと可変容量
ダイオードより成る温度補償部を具えたことを特徴とす
るものである。
In reality, as shown in FIG. 2, the modulation characteristics vary significantly depending on the ambient temperature. In this figure, the horizontal axis shows the frequency, for example, 14 MHZ - 20 MHZ, and the vertical axis shows the modulation characteristics as a proportional characteristic.The temperature change is used as a parameter, -500 at low temperature, +25 °C at normal temperature, and +55 qo at high temperature. is plotted. In other words, as a result of the improvement by the harmonic component in the original invention, it shows almost flat characteristics near 250C, but at -5℃ it shows a characteristic of 120MHZ.
The differential gain near 120 MHz becomes high and the slope shows a descending characteristic, and conversely, at 155 pm, the differential gain near 120 MHz decreases but the slope changes to a rising characteristic. This deterioration in the linearity of the modulation characteristics due to temperature is dominated by the temperature characteristics of a variable capacitance diode, such as a varactor.In other words, at low temperatures, the oscillation amplitude increases due to an increase in the Q of the varactor; This is due to a decrease in the oscillation amplitude due to a decrease in Q.The purpose of the present invention is to linearize the modulation characteristics by controlling the amplitude ratio and phase of the fundamental wave and harmonics, and to achieve FM modulation that compensates for the modulation characteristics due to temperature. In order to achieve the above object, the FM modulator of the present invention includes a variable capacitance diode in a part of the resonant circuit of the oscillation circuit, and changes the capacitance of the variable capacitance diode by an external voltage to generate oscillation. In an FM modulator that shifts the frequency, a harmonic generator that generates harmonics of the oscillation frequency in a feedback loop including a resonant circuit of the oscillation circuit, and a ratio and phase of the amplitude of the fundamental wave and the harmonics are controlled. an amplitude control circuit, controlling the amplitude ratio and phase of the fundamental wave and harmonics of the oscillation frequency so that the capacitance change rate of the variable capacitance diode is 2, and controlling the fundamental wave and the harmonics to the variable capacitance diode. In addition to this, the amplitude control circuit is characterized in that it includes a temperature compensator comprising a diode and a variable capacitance diode, each of which is operated by a bias voltage that changes with temperature.

以下本発明の原理と実施例につき詳述する。いま、可変
容量ダイオードの電圧対容量特性が{1)式で表される
ものとし、この関係式をバラクタの動作点電圧Voから
の変位電圧vによって多項式で表示するとC=C。
The principle and embodiments of the present invention will be explained in detail below. Assume that the voltage vs. capacitance characteristic of the variable capacitance diode is expressed by the equation {1), and when this relational expression is expressed as a polynomial by the displacement voltage v from the operating point voltage Vo of the varactor, C=C.

(V。十v)一o=Cow−n+OW−n−1(−n〉
V+Cow−。
(V. 10v) 1o=Cow-n+OW-n-1(-n〉
V+Cow-.

‐2n(n+,)V22!十‐‐‐‐‐‐+COW−n
−k(−・)k(n苛k)!Vk(4)k!となる。
-2n(n+,)V22! 10------+COW-n
-k(-・)k(nirak)! Vk(4)k! becomes.

この変容量ダイオードにvなる変位電圧が印加されたと
き流れる電流iはi=誌(VC) 【51 容量Cが一定、v=a,cosのtであるときは電流i
はi=−Ca,■sinwt
側(C一定)容量値は C=−」−
′dtとなる。
When a displacement voltage of v is applied to this variable capacitance diode, the current i that flows is i = magazine (VC) [51 When the capacitance C is constant and v = a, cos t, the current i
is i=-Ca, ■sinwt
The side (C constant) capacitance value is C=-”-
'dt.

次に容量Cが一定でない場合は式■を式【5}‘こ代入
し※i=群(C十V砦)‘7} i=群k≧。
Next, if the capacitance C is not constant, substitute the formula ■ into the formula [5}' *i=group (C1V fort)'7} i=group k≧.

C。V。−n−k(−州n−1十k)!比! )(n−
1)!(1十k)vk 側 式{6}′より C=卓。
C. V. -n-k (-state n-10k)! ratio! )(n-
1)! (10k) vk From the side formula {6}', C = table.

机‐n−ku小1十k)!水! )(n−1)k (1十k)vk (9r 変位電圧vが高調波を含み q v=p≧lapcospのt ‘10 ここにapこP次高調波振幅 であるときの電流は式皿を式‘9}に代入すれば得られ
る。
Desk-n-ku elementary school 10k)! water! )(n-1)k (10k)vk (9r Displacement voltage v includes harmonics q v=p≧lapcosp t '10 where ap is the P-order harmonic amplitude, the current is expressed as can be obtained by substituting into equation '9}.

いま、簡単に式■を2次高調波までを考慮してVニal
■Sのt+a2COS2のt (11)とし
たときの電流を計算すると‘9’式より−I;6;=を
(Sinのt)X〔1−M2V。
Now, we can easily convert the equation (■) to V by considering up to the second harmonic.
(2) Calculating the current when t of S+a2t of COS2 (11) From formula '9', -I;6;=(t of Sin)X[1-M2V.

→十善くa亭+冴室)V。}n(n十1)−壱(傘亭a
2十粉茎)V。ぷn(n+1)(n+2)〕十2(Si
nのt)X〔a2一芸・a≧‐V。」n+善(2≧を十
a墓)V。ゼn(n+1)−宏雌十泌≧)V。−3nく
n+1)(n+2)〕十3Ginのt)X〔−a・もV
。一n+さ(a葦十粉.a参)V。)n(n+.)−量
(aを2十をa茎)V。−3n(n十1)(n+2)〕 (12) 式(12)において基本波のみに着目すれば基本波に対
する容量値C,は式■′からC=Cyan{1一肌2V
→ Juzenkua-tei + Saemuro) V. }n (n11) - 1 (Kasa-tei a
20 powder stalks) V. pn(n+1)(n+2)]12(Si
n's t)X [a2 one trick・a≧-V. ” n + good (2 ≧ 10a grave) V. Zenn(n+1)-Hiroshimejuku≧)V. -3nkun+1)(n+2)] 13Gin t)X[-a・alsoV
. 1n+sa (a reed ten powder. a reference) V. ) n (n+.) - quantity (a to 20 to a stalk) V. -3n(n11)(n+2)] (12) In formula (12), if we focus only on the fundamental wave, the capacitance value C for the fundamental wave is calculated from the formula
.

一十善(a字+松琴)V。−2nくh十1)−毒(傘亭
‐a2十$茎)V。ゴn+(n+1)くn十2)} (
13)すなわち可変容量ダィオード‘こかかる電圧が基
本波のみである場合の動作電圧に対する容量値は式{9
}′で示され、変容量ダィオード‘こかかる電圧が基本
波のほかに2次高調波を含む場合の動作電圧に対する容
量値は式(13)で示される。一般に容量変イG率nは
と表現できる。
10 good (a character + pine) V. -2nkuh11)-Poison (Kasa-tei-a20$ stem)V. Go n + (n + 1) ku n 12)} (
13) In other words, when the voltage applied to a variable capacitance diode is only the fundamental wave, the capacitance value for the operating voltage is expressed by the formula {9
}', and when the voltage applied to the variable capacitance diode includes a second harmonic in addition to the fundamental wave, the capacitance value with respect to the operating voltage is shown by equation (13). Generally, the capacitance change G rate n can be expressed as follows.

このときC=CoVmで* n′:n
(15)となり、(14)式が妥当であ
ることがわかる。
At this time, C=CoVm and *n':n
(15), and it can be seen that equation (14) is valid.

式(13)を式(14)に代入すれば可変容量ダイオー
ドに基本波と高調波の合成波が印放された場合の容量変
化率n′が求められる。すなわちd=nXI−(n+1
)は2Vo−1十(。十,)(n+2)さぜ十2。季)
W‐21‐nQ2W‐1十n(n+・)すめ+2べ)昨
2・くn−.)(n+2)(n+3)台(4Q≧。2十
3&)仇−3 0句‐n(n十・)(n+2)も(4Q
≧Q2十30室)W‐3いま2次高調波に対するn′の
変化をみるため、バラクタの特性をn=2,a,/Vo
=1/3として、a2/Voを変化した場合のn′の変
化の1例を示すと第3図のごとくなる。
By substituting equation (13) into equation (14), the capacitance change rate n' when a composite wave of the fundamental wave and harmonics is applied to the variable capacitance diode can be obtained. That is, d=nXI−(n+1
) is 2Vo-1 ten (. ten,) (n+2) saze ten two. Season)
W-21-nQ2W-10n (n+・) recommendation+2be) last year 2・kun−. )(n+2)(n+3) units (4Q≧.2ju3&)en-3 0 phrase-n(nten・)(n+2) also (4Q
≧Q2130) W-3 Now, in order to see the change in n' with respect to the second harmonic, the characteristics of the varactor are set to n=2, a, /Vo
An example of how n' changes when a2/Vo is changed is shown in FIG. 3, assuming that =1/3.

第3図より a2>0のときはげ<nvo a2<0のときはげ>nvo ここでnvoは、可変容量ダィオードーこ高調波が印加
されていない場合の動作電圧Vo点での容量変化率を示
す。
From FIG. 3, when a2>0, baldness<nvo When a2<0, baldness>nvo Here, nvo represents the capacitance change rate at the operating voltage Vo point when no harmonics are applied to the variable capacitance diode.

すなわち、2次高調波の振幅が正ならば容量変化率は減
少し、負ならば容量変化率は増加する。従って2次高調
波成分の振幅と位相により容量変化率は増減することが
わかる。従ってこの原理を利用し、温度によるnの変化
を、斧すなわち基柵と2次高調波の振幅の比と正負の位
相を制御することにより、原発明の場合と同様に変調特
性を直線化することができる。本発明においては、原発
明の回路に付加して温度に応動して前記制御を行なう回
路を設ければよい。温度による変調特性(微分利得)の
変化は、第2図に示すように、低温においては下降特性
を高温においては上昇特性を示す1次傾斜の変化と、各
特性の両側部における曲率の変化に分けられる。
That is, if the amplitude of the second harmonic is positive, the capacitance change rate decreases, and if it is negative, the capacitance change rate increases. Therefore, it can be seen that the capacitance change rate increases or decreases depending on the amplitude and phase of the second harmonic component. Therefore, by utilizing this principle and controlling the change in n due to temperature, the ratio of the amplitude of the base fence and the second harmonic, and the positive/negative phase, the modulation characteristics can be linearized as in the case of the original invention. be able to. In the present invention, a circuit that performs the control in response to temperature may be provided in addition to the circuit of the original invention. As shown in Figure 2, changes in modulation characteristics (differential gain) due to temperature are caused by changes in the primary slope, which shows a decreasing characteristic at low temperatures and an increasing characteristic at high temperatures, and changes in the curvature on both sides of each characteristic. Can be divided.

この1次傾斜の変化に対しては、第1図の振幅制御回路
10に直列に温度補償用のダイオードを接続し、その両
端に感温可変抵抗素子を通してバイアス電圧を印加する
ことにより、たとえば共振回路の可変容量ダイオードを
常温に保持した場合の変調特性を、第4図のごとく第2
図の1次煩斜と逆の傾斜をもたせることができる。たと
えば低温−5℃では高いバイアス抵抗(440)で上昇
特性を、常温十25こ0では中間バイアス抵抗(330
)で平坦特性を、高温+55qoでは低いバイアス抵抗
(220)で下降特性をもたせることが可能である。一
方曲率の変化もこれと同様に、振幅制御回路10‘こ直
列に可変容量ダイオードたとえばバラクタを接続し、そ
の両端に感温可変抵抗素子を通してバイアス電圧を加え
て補償が行なわれる。
This change in the primary slope can be controlled by connecting a temperature compensation diode in series with the amplitude control circuit 10 shown in FIG. The modulation characteristics when the variable capacitance diode in the circuit is kept at room temperature are shown in the second diagram as shown in Figure 4.
It is possible to have an inclination that is opposite to the primary obliquity shown in the figure. For example, at a low temperature of -5°C, a high bias resistance (440) will increase the characteristic, and at a room temperature of 125°C, an intermediate bias resistance (330
), it is possible to have a flat characteristic, and at a high temperature of +55 qo, it is possible to have a falling characteristic with a low bias resistance (220). On the other hand, the change in curvature is similarly compensated by connecting a variable capacitance diode, such as a varactor, in series with the amplitude control circuit 10', and applying a bias voltage to both ends of the variable capacitance diode through a temperature-sensitive variable resistance element.

すなわち第5図に示すように、常温25℃では平坦特性
を示し低温−5℃では両側の曲率が大きくなり、高温+
5500では両側の曲率は小さく現われる。この曲率を
前述の一次傾斜とともに合成すれば第2図の変調特性の
温度による変化に対し十分良好な補償を行なうことがで
きる。第6図は、上記の原理に従った本発明の実施例の
構成を示す説明図である。
In other words, as shown in Figure 5, it exhibits a flat characteristic at room temperature of 25°C, and the curvature on both sides becomes large at low temperature of -5°C.
At 5500, the curvature on both sides appears small. If this curvature is combined with the above-mentioned primary slope, it is possible to sufficiently compensate for the change in the modulation characteristics shown in FIG. 2 due to temperature. FIG. 6 is an explanatory diagram showing the configuration of an embodiment of the present invention according to the above principle.

同図において第1図と異なる点は、振幅制御回路10に
温度補償部21を付加したことであり、他の構成は第1
図のとおりである。第1図の原発班のFM変調器におけ
る振幅制御回路10は、たとえば可変容量ダイオードと
ダイオードを直列に接続し、それぞれ所定のバイアス電
圧で動作させたものである。
The difference between this figure and FIG. 1 is that a temperature compensator 21 is added to the amplitude control circuit 10, and the other configuration is
As shown in the figure. The amplitude control circuit 10 in the FM modulator of the nuclear power plant team shown in FIG. 1 has, for example, a variable capacitance diode and a diode connected in series, each of which is operated at a predetermined bias voltage.

これに対し本発明の温度補償部21は直列に接続したも
ので、たとえば第7図に1例を示すように、両端をコン
デンサで結合したダイオード31と可変容量ダイオ−ド
32を直列に接続し、ダイオード31の両端よりチョー
クコイル33,,332を介し、温度可変抵抗素子たと
えばサーミスタ35を通して端子37よりバイアス電圧
が与えられ、同様に可変容量ダイオード32の両端より
チョークコイル34,,342を介し、サーミスタ36
を通し端子38よりバイアス電圧が与えられる。このよ
うにしてダイオード31および可変容量ダイオード32
による変調特性に与える効果を、それぞれ第4図および
第5図に示す特性のようにすれば、第2図における温度
による変調特性の変化、すなわち1次傾斜の変化と曲率
の変化をそれぞれ有効に補償することが可能となる。
On the other hand, the temperature compensator 21 of the present invention is connected in series, for example, as shown in FIG. A bias voltage is applied from both ends of the diode 31 via the choke coils 33, 332 and a temperature variable resistance element such as the thermistor 35 from the terminal 37, and similarly from both ends of the variable capacitance diode 32 via the choke coils 34, 342. thermistor 36
A bias voltage is applied from the terminal 38 through the terminal 38. In this way, the diode 31 and the variable capacitance diode 32
If the effects on the modulation characteristics due to temperature are made as shown in Figures 4 and 5, respectively, the changes in the modulation characteristics due to temperature in Figure 2, that is, the changes in the primary slope and the changes in curvature, will be effectively It becomes possible to compensate.

この場合本発明の温度補償部21は振幅制御回路10と
同様の機能を有するが、後者はたとえば常温に対する特
性を直線化することを目的とするのに対し、前者は後者
の温度補償をすることが目的であり、そのために温度可
変抵抗素子を別に設けたものである。従って振幅制御回
路10と温度補償部21の可変容量ダイオードをそれぞ
れ共通にして、常温における変調特性の直線化のための
バイアス抵抗素子と、温度補償のための感温可変抵抗素
子とを直列接続して、適当なバイアス電圧を印放しても
よい。以上説明したように、本発明は原発頭における基
本波と高調波成分による変調特性の直線化に加えて、さ
らにその温度補償を可能としたものである。
In this case, the temperature compensator 21 of the present invention has the same function as the amplitude control circuit 10, but the purpose of the latter is, for example, to linearize the characteristics with respect to room temperature, whereas the purpose of the former is to compensate for the temperature of the latter. The purpose is to provide a temperature variable resistance element separately for this purpose. Therefore, the variable capacitance diodes of the amplitude control circuit 10 and the temperature compensation section 21 are made common, and a bias resistance element for linearizing the modulation characteristics at room temperature and a temperature-sensitive variable resistance element for temperature compensation are connected in series. Then, an appropriate bias voltage may be applied or released. As explained above, the present invention not only linearizes the modulation characteristics of the fundamental wave and harmonic components at the head of a nuclear power plant, but also enables temperature compensation thereof.

すなわち温度変化に基づく変調特性の1次傾斜と曲率の
変化を、それぞれ感溢可変抵抗素子を含むダイオードお
よび可変ダイオードより成る温度補償部により、有効に
補償することができるものである。追加の関係 本発明は、特許第1013758号55一5283の追
加発明である。
In other words, changes in the primary slope and curvature of the modulation characteristic due to temperature changes can be effectively compensated for by the temperature compensating section each comprising a diode including a sensitive variable resistance element and a variable diode. Additional Relationship The present invention is an additional invention of Japanese Patent No. 1013758-55-5283.

原発明における発振周波数の基本波と高調波の振幅の比
を制御する手段に、温度により変化するバイアス電圧に
よりそれぞれ動作するダイオードと可変容量ダイオード
より成る温度補償部を設け、温度変化に基づく変調特性
の1次煩斜と曲率の変化を有効に補償する。
In the original invention, the means for controlling the ratio of the amplitude of the fundamental wave and the harmonics of the oscillation frequency is provided with a temperature compensation section consisting of a diode and a variable capacitance diode each operated by a bias voltage that changes with temperature, and modulation characteristics based on temperature changes are provided. This effectively compensates for changes in primary slope and curvature.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は原発明におけるFM変調器の説明図、第2図は
温度に対する変調特性の変化の説明図、第3図〜第5図
は本発明の原理説明図、第6図は本発明の実施例の構成
を示す説明図、第7図は第6図の実施例の要部詳細図で
あり、図中、1は変調入力、2はトランジスタ、3は可
変容量ダイオード、4,7はコンデンサ、6はインダク
タソス、8は高調波発生器、9は直流増幅器、10は振
幅制御回路、11はェミッタ電流制御回路、21は温度
補償部を示す。 汁1図 汁2図 、3図 オ4図 オ5図 オ6図 オフ図
Fig. 1 is an explanatory diagram of the FM modulator in the original invention, Fig. 2 is an explanatory diagram of changes in modulation characteristics with respect to temperature, Figs. An explanatory diagram showing the configuration of the embodiment. FIG. 7 is a detailed view of the main parts of the embodiment of FIG. , 6 is an inductor, 8 is a harmonic generator, 9 is a DC amplifier, 10 is an amplitude control circuit, 11 is an emitter current control circuit, and 21 is a temperature compensation section. Juice 1 figure Juice 2 figure, 3 figure O 4 figure O figure 5 O figure 6 off figure

Claims (1)

【特許請求の範囲】[Claims] 1 発振回路の共振回路の1部に可変容量ダイオードを
設け該可変容量ダイオードの容量を外部電圧により変化
させ発振周波数を変移させるFM変調器において、前記
発振回路の共振回路を含む帰還ループ内に前記発振周波
数の高調波を発生する高調波発生器と該発振周波数の基
本波と高調波の振幅の比と位相を制御する振幅制御回路
を具え、前記発振周波数の基本波と高調波の振幅の比と
位相を前記可変容量ダイオードの容量変化率が2となる
ように制御して該基本波と高調波を前記可変容量ダイオ
ードに加えるとともに、前記振幅制御回路が温度により
変化するバイアス電圧を与えられて等価抵抗を変化する
ダイオードと温度により変化するバイアス電圧を与えら
れて等価容量を変化する可変容量ダイオードとを直列に
接続して成る温度補償部を具えたことを特徴とするFM
変調器。
1. In an FM modulator in which a variable capacitance diode is provided in a part of the resonant circuit of the oscillation circuit and the capacitance of the variable capacitance diode is changed by an external voltage to shift the oscillation frequency, the above-mentioned a harmonic generator that generates harmonics of an oscillation frequency; and an amplitude control circuit that controls the amplitude ratio and phase of the fundamental wave and harmonics of the oscillation frequency; and the phase thereof are controlled so that the capacitance change rate of the variable capacitance diode is 2, and the fundamental wave and harmonics are applied to the variable capacitance diode, and the amplitude control circuit is provided with a bias voltage that changes depending on temperature. FM characterized by comprising a temperature compensating section formed by connecting in series a diode that changes the equivalent resistance and a variable capacitance diode that changes the equivalent capacitance by applying a bias voltage that changes depending on the temperature.
modulator.
JP17759281A 1981-11-05 1981-11-05 fm modulator Expired JPS604609B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17759281A JPS604609B2 (en) 1981-11-05 1981-11-05 fm modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17759281A JPS604609B2 (en) 1981-11-05 1981-11-05 fm modulator

Publications (2)

Publication Number Publication Date
JPS57107613A JPS57107613A (en) 1982-07-05
JPS604609B2 true JPS604609B2 (en) 1985-02-05

Family

ID=16033682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17759281A Expired JPS604609B2 (en) 1981-11-05 1981-11-05 fm modulator

Country Status (1)

Country Link
JP (1) JPS604609B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6250211U (en) * 1985-09-12 1987-03-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6250211U (en) * 1985-09-12 1987-03-28

Also Published As

Publication number Publication date
JPS57107613A (en) 1982-07-05

Similar Documents

Publication Publication Date Title
US4560959A (en) Temperature controlled crystal oscillator arrangement
CA1134466A (en) Temperature-compensated crystal oscillator
JPH0316802B2 (en)
US3068427A (en) Frequency modulator including voltage sensitive capacitors for changing the effective capacitance and inductance of an oscillator circuit
GB2141299A (en) Variable frequency oscillator
KR940003189A (en) Low Gain, Programmable Range, Temperature-Compensated Oscillator
JPS604609B2 (en) fm modulator
US5034706A (en) Voltage-controlled variable oscillator, in particular for phase-lock loops
US5648741A (en) Circuit having overall transfer function providing temperature compensation
US4916412A (en) Voltage-controlled oscillator using a phase control loop for establishing an accurate idling frequency and temperature stabilized control sensitivity
US4607237A (en) Temperature-compensated crystal oscillator circuit
US3200349A (en) Crystal controlled oscillator with temperature compensation
US3360746A (en) Crystal controlled frequency modulated oscillator
JPS604608B2 (en) fm modulator
US3534295A (en) Linearized frequency modulated crystal oscillators compensated for ambient temperature variations
US2162520A (en) Constant frequency oscillation generator
JPS55125710A (en) Tone control circuit
JPS6029216Y2 (en) Temperature compensated piezoelectric oscillator
SU587595A1 (en) Quartz self-oscillator
JP4538913B2 (en) Temperature compensated piezoelectric oscillator
JPH08191214A (en) Voltage controlled oscillator
SU1092696A1 (en) Audio-frequency harmonic sinusoidal oscillator
Chung et al. A design of LC-tuned sinusoidal VCOs using OTA-C active inductors
JPH0441606Y2 (en)
JPH10126153A (en) Crystal oscillation circuit