JPS6046540B2 - Electronic device manufacturing method - Google Patents
Electronic device manufacturing methodInfo
- Publication number
- JPS6046540B2 JPS6046540B2 JP53161516A JP16151678A JPS6046540B2 JP S6046540 B2 JPS6046540 B2 JP S6046540B2 JP 53161516 A JP53161516 A JP 53161516A JP 16151678 A JP16151678 A JP 16151678A JP S6046540 B2 JPS6046540 B2 JP S6046540B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- mold
- inlet
- upper mould
- mould
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
- H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9413—Dispositions of bond pads on encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/019—Manufacture or treatment using temporary auxiliary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は電子部品の回路基板の成形時に、電子部品を同
時に埋め込む様にし、生産性の向上をはかつた半導体装
置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device in which electronic components are simultaneously embedded during molding of a circuit board for electronic components, thereby improving productivity.
従来、電子部品、主として半導体チップを絶縁材料によ
り形成された回路基板に埋め込み、かつ、半導体チップ
の表面と、回路基板表面とをほぼ同一高さとし、その後
、半導体チップの電極を含む様に、配線パターンを形成
する場合第1図に示す如き方法が提案されていた。Conventionally, electronic components, mainly semiconductor chips, have been embedded in a circuit board made of an insulating material, and the surface of the semiconductor chip and the surface of the circuit board have been made approximately the same height, and then wiring has been installed to include the electrodes of the semiconductor chip. When forming a pattern, a method as shown in FIG. 1 has been proposed.
すなわち、第1図において、回路基板1に設けられた半
導体チップ2の埋込部3に、FEP等の樹脂を適量投入
し、半導体チップ2を投入し、平板で押圧する事により
、前記樹脂を成形し緩衝層4を形成する。That is, in FIG. 1, an appropriate amount of resin such as FEP is put into the embedded part 3 of the semiconductor chip 2 provided on the circuit board 1, and the semiconductor chip 2 is put in and pressed with a flat plate to remove the resin. The buffer layer 4 is formed by molding.
その後図示してない配線パターンを形成すれば電子装置
は完成する。この場合緩衝層4は埋込部3の形状誤差及
び半導体チップ2の形状誤差により、半導体チップ2と
埋込部3との間にスキマが生じ、通常用いられる蒸着法
等による薄膜配線が出来なくなる事を防ぐはたらきをす
る。この様なはたらきがある事から明らかな様に緩衝層
4は、半導体チップ2の表面5及び回路基板1の表面7
とほぼ同一高さの表面6を有さなければならない。この
ためには埋込部3及び半導体・チップ2各々の形状を高
精度にしなければならない他、FEP等の樹脂の定量供
給にも非常に高い精度を要する事から、以上の技術によ
つては各々の高さを一定レベルにする事は非常に困難で
ある。従つてこの様な方法での量産は難しく、又量・産
する場合歩留まりの低下と、製造工数の増大につながる
。以上を改善する手段として、FEP等の樹脂を多めに
埋込部3に投入し、半導体チップ2より盛り上がつたも
のについては、機械的、化学的研磨により除去する事が
提案されている。この場合、形状等は高精度なものは不
要となるが、反面、研磨は高度な技術が要求され少くと
も半導体チップへのダメージはあつてはならない。この
様な要求を満たす技術は前述した、形状精度を高めて埋
め込む場合に比べても高り技術レベルが要求され、生産
工数が多くかかつていた。本発明はかかる欠点を除去す
るためのもので、予じめ半導体チップを回路基板の成形
型中に投入し、その他樹脂を充填し回路基板を成形する
事により、生産工数を削減し、断線による信頼性の低下
を無くしたものである。After that, a wiring pattern (not shown) is formed to complete the electronic device. In this case, due to the shape error of the buried portion 3 and the shape error of the semiconductor chip 2, a gap is created between the semiconductor chip 2 and the buried portion 3 in the buffer layer 4, making it impossible to form thin film wiring using the commonly used vapor deposition method. It works to prevent things from happening. As it is clear from the fact that it has such a function, the buffer layer 4 is able to protect the surface 5 of the semiconductor chip 2 and the surface 7 of the circuit board 1.
It must have a surface 6 of approximately the same height as. For this purpose, the shapes of the embedded part 3 and the semiconductor/chip 2 must be made with high precision, and the quantitative supply of resin such as FEP also requires extremely high precision. It is very difficult to keep each height at a constant level. Therefore, mass production using such a method is difficult, and mass production leads to a decrease in yield and an increase in manufacturing man-hours. As a means to improve the above problem, it has been proposed to put a large amount of resin such as FEP into the embedded part 3 and to remove the resin that protrudes from the semiconductor chip 2 by mechanical or chemical polishing. In this case, it is not necessary to have a highly precise shape, etc., but on the other hand, polishing requires a sophisticated technique and at least damage to the semiconductor chip must be avoided. Techniques that meet these requirements require a higher level of technology than the aforementioned embedding with improved shape accuracy, and require a large number of production steps. The present invention is intended to eliminate such drawbacks, and by placing semiconductor chips in advance into a circuit board mold, filling the mold with other resin, and molding the circuit board, it is possible to reduce production man-hours and reduce wire breakage. This eliminates the drop in reliability.
本発明を電子時計の回路ブロックに応用した、製造方式
の一実施例を第2図第3図について説明する。An embodiment of a manufacturing method in which the present invention is applied to a circuit block of an electronic timepiece will be described with reference to FIGS. 2 and 3.
第2図、第3図において、従来の方法で説明したのと同
様な半導体チップ2を、位置決めピン10を有する下型
11のフラット状の上面に、図示していない外部取出電
極の表面を下向きに密着載置する。In FIGS. 2 and 3, a semiconductor chip 2 similar to that described in the conventional method is placed on the flat upper surface of a lower mold 11 having positioning pins 10, with the surfaces of external electrodes (not shown) facing downward. Place it in close contact with the
この状態において半導体チップ2は、下型11に対し位
置決めされる(第2図a)。次に上型12をおおい、前
記チップ2の上面と各側面に空隙14aが形成されるよ
うに締め、注入口13より、樹脂Aを充填し、緩衝層1
4を形成する(第2図b)。その後、上型12を開放し
、不要部分、すなわち注入口13に固化した樹脂を取り
さり、その後、上型15を上型12と同様におおい、前
記緩衝層14の上面と各側面に空隙17aが形成される
ように上型15の下面が下型11の下面に密着するよう
に締め、樹脂Bを上型15の注入口16より充填し、回
路基板17を形成する.(第2図c)。次に上型15を
開放し、下型11より回路基板17を取り出し、注入口
16に固化した部分を除去する(第2図d)。20は位
置決めピン10により出来た空隙である。In this state, the semiconductor chip 2 is positioned with respect to the lower mold 11 (FIG. 2a). Next, the upper mold 12 is covered and tightened so that gaps 14a are formed on the upper surface and each side surface of the chip 2, and the resin A is filled through the injection port 13, and the buffer layer 1
4 (Figure 2b). After that, the upper mold 12 is opened, and the unnecessary part, that is, the solidified resin is removed from the injection port 13. Then, the upper mold 15 is covered in the same manner as the upper mold 12, and the upper surface and each side surface of the buffer layer 14 are covered with voids 17a. The lower surface of the upper mold 15 is tightly pressed against the lower surface of the lower mold 11 so that the upper mold 15 is formed, and the resin B is filled through the injection port 16 of the upper mold 15 to form the circuit board 17. (Figure 2c). Next, the upper mold 15 is opened, the circuit board 17 is taken out from the lower mold 11, and the solidified portion in the injection port 16 is removed (FIG. 2d). 20 is a gap created by the positioning pin 10.
しかる後、半導体チップ2の図示していない外部取出電
極を含.む配線パターン18をスクリーン印刷法を用い
、導電性ペーストを印刷する事により形成する。これに
より、半導体チップ2、緩衝層1牡回路基板17、配線
パターン18から成る回路ブロック19は完成する(第
2図e)。以上の説明から明らかな様に、半導体チップ
2は下型11に、表面を密着した状態で樹脂A及びBが
注入されるため、半導体チップ2、緩衝層14及び、回
路基板17の各々の表面は、高度な技術を用いず、各々
4〜5μm以下の段差に押える事ができる。Thereafter, the semiconductor chip 2 including external lead-out electrodes (not shown) is removed. The wiring pattern 18 is formed by printing conductive paste using a screen printing method. As a result, a circuit block 19 consisting of the semiconductor chip 2, the buffer layer 1 circuit board 17, and the wiring pattern 18 is completed (FIG. 2e). As is clear from the above explanation, since the semiconductor chip 2 is injected with the resins A and B into the lower mold 11 with the surfaces in close contact with each other, the surfaces of the semiconductor chip 2, the buffer layer 14, and the circuit board 17 are It is possible to suppress the height difference to 4 to 5 μm or less without using advanced technology.
一このために製造歩留まりが向上する他、配線パターン
18の断差部での断線が無くなり、信頼性が向上する。
本発明の説明においては、独立した、下型11、上型A
l2、上型Bl5の独立した3個の型により、緩衝層1
牡回路基板17を形成したが、緩衝層14をさらに一層
増加させる場合においては4ケの型が必要となる等これ
らは、回路ブ”ロック19の型状により種々選択できる
。This not only improves the manufacturing yield, but also eliminates disconnections at the difference portions of the wiring pattern 18, improving reliability.
In the description of the present invention, independent lower mold 11, upper mold A
Buffer layer 1 is formed by three independent molds including upper mold Bl2 and
Although a single circuit board 17 is formed, if the number of buffer layers 14 is to be further increased, four molds will be required, and these can be variously selected depending on the shape of the circuit block 19.
もち論、前述した型及び動作をメカ的に結合し機械化し
てもよい。この場合においては、通常行なわれる射出成
形と同様に考えられ、製造に要する工数は減少する等、
機械化、自動化しやすい、製造方式である事はいうまで
もない。本発明の説明においては、樹脂A及びBを各々
、緩衝層14、回路基板17として形成したが、樹脂ば
かりでなく、無機物質、セラミック等、絶縁材料であり
、機械的、電気的特性を満足するものであればどの様な
ものでもよい。Of course, the above-described types and operations may be mechanically combined and mechanized. In this case, it is considered to be similar to ordinary injection molding, and the number of man-hours required for manufacturing is reduced, etc.
Needless to say, it is a manufacturing method that is easy to mechanize and automate. In the description of the present invention, resins A and B are used to form the buffer layer 14 and the circuit board 17, respectively. It can be anything as long as it does.
本発明の説明については電子時計の回路ブロックに応用
した例について説明したが、電卓、カメラ、ラジオ等、
電子部品を用いる機器であれば、同様に応用できる。The present invention has been explained with reference to an example in which it is applied to a circuit block of an electronic watch, but it can also be applied to calculators, cameras, radios, etc.
The same applies to any device that uses electronic components.
又回路構成により半導体チップ2を1個ばかりてなく、
複数個同時に埋め込む事も可能であり、抵抗、コンデン
サー等他の電子部品も複合させて埋込む事も可能である
。本発明の説明においては、位置決めピン10は、L字
型のものを2ケ用いたが、第4図に示す如く複数個の丸
ピン21を用いてもよく、配線パターン18を防げない
様な構成であれば種々考えられる。又真空等による位置
決めを採用する事によりピンを用いない事も可能である
。さらに、形状精度が不要の場合においては、第5図に
示す如く下型22に半導体チップ2をその図示してない
外部電極取出し部を下側にし固定し、上方から樹脂を充
填し回路基板23を形成しても良い。本発明の説明にお
いては配線パターン形成は、導電性ペーストをスクリー
ン印刷により行なつたが、真空蒸着法により全面に金属
膜を形成した後、写真法により形成しても良い。Also, due to the circuit configuration, there is not only one semiconductor chip 2,
It is possible to embed multiple pieces at the same time, and it is also possible to embed other electronic parts such as resistors and capacitors in combination. In the description of the present invention, two L-shaped positioning pins 10 are used, but a plurality of round pins 21 may be used as shown in FIG. Various configurations are possible. It is also possible to eliminate the use of pins by employing positioning using vacuum or the like. Furthermore, if shape accuracy is not required, the semiconductor chip 2 is fixed to the lower mold 22 with its external electrode extraction portion (not shown) facing downward, as shown in FIG. may be formed. In the description of the present invention, the wiring pattern was formed by screen printing a conductive paste, but it may also be formed by a photographic method after forming a metal film on the entire surface by vacuum evaporation.
以上の如く本発明は、回路基板の成形型中に電子部品を
投入した後、樹脂を充填する事により、断線による信頼
性の低下を無くしたものである。As described above, the present invention eliminates the reduction in reliability due to wire breakage by filling the mold with resin after electronic components are placed in the mold for the circuit board.
第1図は従来の方法による半導体装置の断面図、第2図
は本発明の工程の一実施例を示す工程図、第3図は下型
の平面図、第4図は下型のその他の一例を示す平面図、
第5図は他の製造方法を示す断面図。
2・・・・・・半導体チップ、11・・・・・・下型、
12・・上型All4・・・・・緩衝層、15・・・・
・・上型Bll7・・・・・回路基板、18・・・・・
・配線パターン、19・・回路ブロック。FIG. 1 is a sectional view of a semiconductor device according to a conventional method, FIG. 2 is a process diagram showing an example of the process of the present invention, FIG. 3 is a plan view of a lower mold, and FIG. A plan view showing an example,
FIG. 5 is a sectional view showing another manufacturing method. 2... Semiconductor chip, 11... Lower mold,
12...Top mold All4...Buffer layer, 15...
...Upper Bll7...Circuit board, 18...
・Wiring pattern, 19...Circuit block.
Claims (1)
造方法。 (1)電子部品2を、その外部取出電極を有する面を下
向きにして下型11のフラット状の上面に密着載置する
第1の工程。 (2)前記電子部品2の上面と各側面に空隙14aが設
けられるように上型12が前記電子部品2をおおい、上
型12の下面を前記下型11の上面に密着載置し、前記
上型12の注入口13より前記空隙14aに緩衝用絶縁
材料14を充填する第2の工程。 (3)前記上型12を取り外し、前記注入口13に固化
した前記絶縁材料14を取り除く第3の工程。 (4)前記絶縁材料14の上面と各側面に空隙17aが
設けられるように上型15がおおい、上型15の下面が
前記下型11の前記上面に密着載置し、前記上型15の
注入口16より回路基板用絶縁材料17を充填する第4
の工程。 (5)前記第4の工程により得られた電子装置から前記
下型11を取り除く第5の工程。 (6)前記電子部品2の外部取出電極に配線パターン1
8を接続形成する第6の工程。[Scope of Claims] 1. A method for manufacturing an electronic device, characterized by comprising the following steps. (1) A first step of closely mounting the electronic component 2 on the flat upper surface of the lower mold 11 with the surface having the external electrode facing downward. (2) The upper mold 12 covers the electronic component 2 so that gaps 14a are provided on the upper surface and each side surface of the electronic component 2, and the lower surface of the upper mold 12 is placed closely on the upper surface of the lower mold 11, and the A second step of filling the gap 14a with the buffer insulating material 14 through the injection port 13 of the upper mold 12. (3) A third step of removing the upper mold 12 and removing the insulating material 14 solidified in the injection port 13. (4) The upper mold 15 is covered so that gaps 17a are provided on the upper surface and each side surface of the insulating material 14, the lower surface of the upper mold 15 is placed closely on the upper surface of the lower mold 11, and the upper mold 15 is The fourth step is to fill the circuit board insulating material 17 through the injection port 16.
process. (5) A fifth step of removing the lower mold 11 from the electronic device obtained in the fourth step. (6) Wiring pattern 1 on the external electrode of the electronic component 2
The sixth step is to connect and form 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53161516A JPS6046540B2 (en) | 1978-12-26 | 1978-12-26 | Electronic device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53161516A JPS6046540B2 (en) | 1978-12-26 | 1978-12-26 | Electronic device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5587450A JPS5587450A (en) | 1980-07-02 |
| JPS6046540B2 true JPS6046540B2 (en) | 1985-10-16 |
Family
ID=15736548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53161516A Expired JPS6046540B2 (en) | 1978-12-26 | 1978-12-26 | Electronic device manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6046540B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240169829A (en) * | 2023-05-25 | 2024-12-03 | 인하대학교 산학협력단 | A latent curing agent compound and an epoxy resin composition comprising the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136641A (en) * | 1986-11-28 | 1988-06-08 | Toppan Printing Co Ltd | Integrated circuit chip mount and mounting method for integrated circuit chip |
-
1978
- 1978-12-26 JP JP53161516A patent/JPS6046540B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240169829A (en) * | 2023-05-25 | 2024-12-03 | 인하대학교 산학협력단 | A latent curing agent compound and an epoxy resin composition comprising the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5587450A (en) | 1980-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2515086B2 (en) | Flat structure electronic module | |
| JP2702012B2 (en) | IC chip support | |
| JP2778539B2 (en) | Case where ball grids formed by injection molding are arranged | |
| JP3304705B2 (en) | Manufacturing method of chip carrier | |
| US5216806A (en) | Method of forming a chip package and package interconnects | |
| US3773628A (en) | Method of making a lead assembly | |
| JPS62244139A (en) | Resin sealed type pin grid array and manufacture thereof | |
| JP3332654B2 (en) | Semiconductor device substrate, semiconductor device, and method of manufacturing semiconductor device | |
| CN109545768B (en) | Package having lead frame with improved lead design and fabrication thereof | |
| JPS6139741B2 (en) | ||
| US5736789A (en) | Ball grid array casing for integrated circuits | |
| US10461044B2 (en) | Wafer level fan-out package and method of manufacturing the same | |
| JP2001320150A (en) | Wiring board by stamper and manufacturing method thereof | |
| JPS624351A (en) | Manufacture of semiconductor carrier | |
| JPS6314455A (en) | Semiconductor device | |
| JPS6235693A (en) | Circuit board | |
| US20190393654A1 (en) | Unitary molded usb device | |
| JPS6046540B2 (en) | Electronic device manufacturing method | |
| CN112117202B (en) | Manufacturing method of chip packaging structure | |
| CN112712153B (en) | Memory card structure and manufacturing method thereof | |
| JPH01198351A (en) | Method of fixing electron element and contact thereof onto substrate | |
| JPH11111738A (en) | COB, COB manufacturing method, semiconductor device, and semiconductor device manufacturing method | |
| JPH0418399A (en) | Ic module | |
| CN114883201A (en) | AQFN production method | |
| CN114430627B (en) | Manufacturing method of composite sensor packaging support plate and laser radar sensor |