Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS6046557B2 - Manufacturing method of piezoelectric ceramics - Google Patents
[go: Go Back, main page]

JPS6046557B2 - Manufacturing method of piezoelectric ceramics - Google Patents

Manufacturing method of piezoelectric ceramics

Info

Publication number
JPS6046557B2
JPS6046557B2 JP53103024A JP10302478A JPS6046557B2 JP S6046557 B2 JPS6046557 B2 JP S6046557B2 JP 53103024 A JP53103024 A JP 53103024A JP 10302478 A JP10302478 A JP 10302478A JP S6046557 B2 JPS6046557 B2 JP S6046557B2
Authority
JP
Japan
Prior art keywords
thickness
sintering
pressure
piezoelectric ceramics
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53103024A
Other languages
Japanese (ja)
Other versions
JPS5529167A (en
Inventor
正光 西田
俊一郎 河島
一朗 上田
宏 大内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP53103024A priority Critical patent/JPS6046557B2/en
Priority to GB7928900A priority patent/GB2028791B/en
Priority to US06/067,681 priority patent/US4226827A/en
Priority to DE19792933978 priority patent/DE2933978A1/en
Publication of JPS5529167A publication Critical patent/JPS5529167A/en
Publication of JPS6046557B2 publication Critical patent/JPS6046557B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】 本発明は圧電磁器材料の製造方法に関するものであり
、厚みたて振動に関するエネルギーとじ込め共振子を構
成することがてき、機械的質係数QMおよび電気機械結
合係数に、、に。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a piezoelectric ceramic material, which can configure an energy confinement resonator related to vertical vibration, and has a mechanical quality coefficient QM and an electromechanical coupling coefficient. , to.

。が大きく、薄板に加工することのできる高周波共振子
用等に適する圧電磁器材料を提供するものてある。 テ
レビジョン受像機などの高周波回路のIC化が進むにつ
れて、IC回路の周辺部品、特にリアクタンス回路の固
体化、無調整、高性能化が強く要望されている。
. The present invention provides a piezoelectric ceramic material suitable for use in high-frequency resonators, etc., which has a large surface area and can be processed into a thin plate. As the use of ICs in high-frequency circuits in television receivers and the like progresses, there is a strong demand for peripheral components of IC circuits, especially reactance circuits, to be solid-state, non-adjustable, and high-performance.

圧電磁器共振子はこの要望を満すことのできるものとし
て期待されている。 圧電磁器を高周波共振子として用
いる場合、共振周波数が厚さで決まる厚み振動、特に厚
みたて振動を用いるのが有利である。厚みたて振動の周
波数定数は2000H2−m程度であるから、もし50
MH2の共振周波数を得ようとすると、磁器共振子の厚
さは40μm程度という非常に薄い板にまで加工しなけ
ればならない。さらに、厚みたて振動を共振子やフィル
タに使用するときに重要なことは不要共振の除去てある
。不要振動の除去には、エネルギとじ込め法が有効であ
る。厚みたて振動の基本波共振に、このエネルギーとじ
込め法が適用できる条件としては、(2−C旨a−S牙
。)/(2一2Cg。・S牙。)で与えられるポアソン
比σが113より大きいことが必要である。ただし、C
No、は厚みたて振動に関連した弾性ステイフネス、S
〒。は厚みすベリ振動に関連した弾性コンプライアンス
である。また、高周波領域で低損失の共振子を得ようと
すると、機械的質係数QMが20哨度以上てあることが
必要である。 従来の焼成法では機械的に弱い材料しか
得られず、200μm程度の厚さまでにしかできないた
めに厚みたて振動によつても約10MH2景上の共振子
を得ることは困難であつた。
Piezoelectric ceramic resonators are expected to be able to meet this demand. When using a piezoelectric ceramic as a high-frequency resonator, it is advantageous to use thickness vibration, particularly thickness vertical vibration, in which the resonant frequency is determined by the thickness. The frequency constant of thickness vibration is about 2000H2-m, so if 50
In order to obtain the resonant frequency of MH2, the magnetic resonator must be processed into a very thin plate with a thickness of approximately 40 μm. Furthermore, when using thick vertical vibration in a resonator or filter, it is important to eliminate unnecessary resonance. The energy confinement method is effective in removing unnecessary vibrations. The conditions under which this energy confinement method can be applied to the fundamental wave resonance of thick vertical vibration are the Poisson's ratio σ given by (2-C g a- S g.)/(2-2 Cg. S g.) must be greater than 113. However, C
No. is elastic stiffness related to thickness vibration, S
〒. is the elastic compliance associated with thickness-beam vibration. Further, in order to obtain a resonator with low loss in a high frequency region, it is necessary that the mechanical quality factor QM is 20 degrees or more. With the conventional firing method, only a mechanically weak material can be obtained, and only a thickness of about 200 μm can be obtained, so it has been difficult to obtain a resonator with a diameter of about 10 MH 2 even by vertical vibration.

さらに、これまではσについての測定例がほとんどな
く、113以上のσを持つ組成範囲は明らかにされてい
なかつた。
Furthermore, until now there have been few examples of measurement of σ, and the composition range with σ of 113 or more has not been clarified.

そして、QMが20曜度以上・で、しかもσが113以
上で200μm以下の薄板にまで加工することのてきる
材料はこれまでに得られていなかつた。 本発明は、1
13以上のσと200景上のQMをもち、30μm程度
の薄板に加工することができる結・合係数Ktの大きな
高周波用の圧電磁器材料を得る方法に関するもので、(
1−w)(PbTll−ZZrzO3)+WMnO2(
ただし、0.48≦z≦0.64,0.004≦w≦0
.06)の組成のものを限られた条件で加熱加圧焼結す
ることによつて得られることを見出したことに基くもの
である。
Until now, no material has been obtained that has a QM of 20 degrees or more, a σ of 113 or more, and which can be processed into a thin plate of 200 μm or less. The present invention includes 1
It relates to a method of obtaining a piezoelectric ceramic material for high frequency use that has a σ of 13 or more and a QM of 200 degrees, and a large coupling coefficient Kt that can be processed into a thin plate of about 30 μm.
1-w)(PbTll-ZZrzO3)+WMnO2(
However, 0.48≦z≦0.64, 0.004≦w≦0
.. This is based on the discovery that it can be obtained by heat-pressing sintering of composition 06) under limited conditions.

以下、実施例をあげて説明する。PbO,TiO2,Z
rO2,MnO2の原料を下表の組成になるように秤量
し、ボールミルで17時間湿式混合した。
Examples will be described below. PbO, TiO2, Z
Raw materials for rO2 and MnO2 were weighed to have the compositions shown in the table below, and wet mixed in a ball mill for 17 hours.

スラリーをろ過、乾燥させてから、約850′Cで2時
間仮焼したのち、再びボールミルで湿式粉砕した。粉砕
したものを乾燥させたのち、直径30W$L1厚さ17
蒜の円板を圧力500k9/dで成形し、それを下表に
示した条件で加熱加圧焼結した。その後、900′Cで
4時間焼鈍処理を行なつた。比較のため、同じ条件で作
つた粉体を成形し普通焼成した。これらの焼成した試料
から直径6順の円板を切り出し、それを最低30μmの
厚みになるまで研摩した。機械的に弱い試料は30μm
の厚さになるまでに割れてしまい、所望の薄板素子を得
ることができなかつた。なお、圧電的性質は厚さ0.3
TgfLの円板試料に金電極を設けて、それを1600
Cのシリコンオイル中で5KV/TWLの直流電界を印
加した試料について測定した。K33は1×1×5Tr
$13の試料で測定した。焼成条件と研摩限界との関係
を第1表に示す。
The slurry was filtered, dried, calcined at about 850'C for 2 hours, and wet milled again using a ball mill. After drying the crushed material, diameter 30W$L1 thickness 17
A disk of garlic was molded at a pressure of 500 k9/d, and then sintered under heat and pressure under the conditions shown in the table below. Thereafter, annealing treatment was performed at 900'C for 4 hours. For comparison, powder made under the same conditions was molded and fired normally. Disks of 6 diameters were cut from these fired samples and polished to a minimum thickness of 30 μm. 30 μm for mechanically weak samples
The thin plate element was cracked by the time it reached a thickness of 100 mm, making it impossible to obtain the desired thin plate element. In addition, the piezoelectric property is determined by the thickness of 0.3
A gold electrode was provided on the disk sample of TgfL, and it was
Measurements were made on a sample in which a DC electric field of 5 KV/TWL was applied in silicone oil of C. K33 is 1x1x5Tr
Measured using a $13 sample. Table 1 shows the relationship between firing conditions and polishing limits.

普通焼成では、表の焼成条件で最大の密度の磁器一が得
られるが200pm以下の厚さにまで研摩することはで
きなかつた。しかし、本発明の加熱加圧焼結によれは、
きわめて薄い磁器素体を得ることがてきる。加熱加圧焼
結の温度が1050〜1300゜Cの場合に30pmま
で研摩することができた。焼結時.の加圧力が100k
g/Cltより小さいと、焼結不足で不均一な試料とな
り、磁器を200pm以下の厚さにまて研摩することが
困難であつた。圧力が100〜500k9/cイの範囲
て加熱加圧焼結することにより、30μmの厚さまで研
摩可能な磁器が得られ!た。加熱時間については、0.
時間以下では焼結が不均一であり、100μm以下の薄
板に研摩加工に耐える材料が得られない。また、2橢間
以上の焼結は、磁器の強度の低下と生産性の低下が大き
くなるため、好ましくない。したがつて、本発明くの方
法における加熱加圧焼結の条件の範囲は、温度1050
〜1300℃、圧力100〜500kg/Cltl時間
0.5〜24TII間の範囲である。第1図に1250
℃、200kg/Clt、4時間の条件で加熱加圧焼結
した磁器試料(w=0.008)のzに対するσの変化
の様子を示す。
In normal firing, porcelain with the maximum density was obtained under the firing conditions shown in the table, but it was not possible to polish it to a thickness of 200 pm or less. However, due to the heat and pressure sintering of the present invention,
An extremely thin porcelain body can be obtained. When the heating and pressure sintering temperature was 1050 to 1300°C, polishing up to 30 pm was possible. During sintering. The pressing force is 100k
If it was smaller than g/Clt, the sample would be non-uniform due to insufficient sintering, and it would be difficult to polish the porcelain to a thickness of 200 pm or less. By heating and pressurizing sintering at a pressure in the range of 100 to 500 k9/c, porcelain that can be polished to a thickness of 30 μm can be obtained! Ta. Regarding heating time, 0.
If the sintering time is shorter than that, the sintering will be non-uniform and it will not be possible to obtain a material that can withstand polishing into a thin plate of 100 μm or less. Further, sintering of 2 or more diameters is not preferable because it greatly reduces the strength of the porcelain and the productivity. Therefore, the range of conditions for heating and pressure sintering in the method of the present invention is a temperature of 1050°C.
-1300°C, pressure 100-500 kg/Cltl time range between 0.5-24TII. 1250 in Figure 1
The figure shows how σ changes with respect to z for a ceramic sample (w=0.008) that was heat-pressure sintered at ℃, 200 kg/Clt, and 4 hours.

第1図から明らかなように、σはzの値が0.55のと
き最大を示した。その場合のKtとK33はそれぞれ0
.54および、0.68で大きな値を示した。zの変化
によるσの変化の傾向は、wの値および加熱加圧条件に
よつてはほとんど変わらない。厚みたて振動の基本波の
エネルギーとじ込め条件、すなわちσ〉113の条件を
満たす範囲はw=0.008の場合には0.48≦z≦
0.64の組成範囲である。なお、wが0.004〜0
.06の場合にも、上記のzの範囲内ではσ〉113の
条件は満たされた。第2図に温度1250℃、圧力20
0kg/Cltで4時間加熱加圧焼結した試料(z=0
.60)のwによるQ9の変化を示した。
As is clear from FIG. 1, σ was maximum when the value of z was 0.55. In that case, Kt and K33 are each 0
.. It showed large values at 54 and 0.68. The tendency of the change in σ due to the change in z hardly changes depending on the value of w and the heating and pressurizing conditions. The range that satisfies the energy confinement condition of the fundamental wave of the thickness vertical vibration, that is, the condition of σ〉113, is 0.48≦z≦ when w=0.008.
The composition range is 0.64. In addition, w is 0.004 to 0
.. In the case of 06 as well, the condition of σ>113 was satisfied within the above range of z. Figure 2 shows a temperature of 1250℃ and a pressure of 20℃.
Sample sintered under heat and pressure at 0 kg/Clt for 4 hours (z=0
.. 60) shows the change in Q9 due to w.

QMはwが0.02のとき最大になる。この傾向は、z
の値および加熱加圧焼結条件によつては変わらない。図
から明らかなように、QMが200以上になるwの範囲
は、0.004〜0.06である。
QM is maximum when w is 0.02. This tendency is
It does not change depending on the value of and the heating and pressure sintering conditions. As is clear from the figure, the range of w in which QM is 200 or more is 0.004 to 0.06.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明にかかる方法で作られた試料の組成とポ
アソン比σとの関係の一例を示す図、第2図は同じく組
成と機械的質係数QMとの関係の一例を示す図である。
FIG. 1 is a diagram showing an example of the relationship between the composition and Poisson's ratio σ of a sample made by the method according to the present invention, and FIG. 2 is a diagram showing an example of the relationship between the composition and the mechanical quality factor QM. be.

Claims (1)

【特許請求の範囲】 1(1−w)〔PbTi_1_−_zZr_zO_3+
wMnO_2で表わされる組成において、0.48≦z
≦0.64,0.004≦w≦0.006なる範囲内の
組成物を、温度1050〜1300℃および圧力100
〜500kg/cm^2で0.5〜24時間加熱加圧焼
結することを特徴とする圧電磁器の製造方法。
[Claims] 1 (1-w) [PbTi_1_-_zZr_zO_3+
In the composition represented by wMnO_2, 0.48≦z
≦0.64, 0.004≦w≦0.006 at a temperature of 1050 to 1300°C and a pressure of 100°C.
A method for producing piezoelectric ceramics, characterized by heating and pressurizing sintering at ~500 kg/cm^2 for 0.5 to 24 hours.
JP53103024A 1978-08-23 1978-08-23 Manufacturing method of piezoelectric ceramics Expired JPS6046557B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP53103024A JPS6046557B2 (en) 1978-08-23 1978-08-23 Manufacturing method of piezoelectric ceramics
GB7928900A GB2028791B (en) 1978-08-23 1979-08-20 Preparing piezoelectric ceramics
US06/067,681 US4226827A (en) 1978-08-23 1979-08-20 Method for preparing piezoelectric ceramics
DE19792933978 DE2933978A1 (en) 1978-08-23 1979-08-22 METHOD FOR PRODUCING PIEZOELECTRIC CERAMICS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53103024A JPS6046557B2 (en) 1978-08-23 1978-08-23 Manufacturing method of piezoelectric ceramics

Publications (2)

Publication Number Publication Date
JPS5529167A JPS5529167A (en) 1980-03-01
JPS6046557B2 true JPS6046557B2 (en) 1985-10-16

Family

ID=14343067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53103024A Expired JPS6046557B2 (en) 1978-08-23 1978-08-23 Manufacturing method of piezoelectric ceramics

Country Status (1)

Country Link
JP (1) JPS6046557B2 (en)

Also Published As

Publication number Publication date
JPS5529167A (en) 1980-03-01

Similar Documents

Publication Publication Date Title
JP3282576B2 (en) Piezoelectric ceramic composition
JPH11228225A (en) Piezoelectric ceramic composition
US20170275207A1 (en) Cordierite-based sintered body, method for producing the same, and composite substrate
CN112939596B (en) Microwave dielectric ceramic and preparation method thereof
JPS6046557B2 (en) Manufacturing method of piezoelectric ceramics
JPS6022513B2 (en) piezoelectric porcelain
JPS6046556B2 (en) Manufacturing method of piezoelectric ceramics
JP2017178773A (en) Cordierite sintered compact, method for producing the same and composite substrate
JPS5860582A (en) Piezo-electric ceramics
JPS5923048B2 (en) dielectric resonator
US4226827A (en) Method for preparing piezoelectric ceramics
KR100336426B1 (en) Method for manufacturing ceramics composition for electro-energy conversion
JPS6132838B2 (en)
JP2515437B2 (en) Method for manufacturing dielectric porcelain
JPS628960B2 (en)
JPS5943104B2 (en) piezoelectric ceramic material
JPS63182255A (en) Piezoelectric ceramic composition
JPS5949650B2 (en) Materials for dielectric resonators
JPH0745336B2 (en) Piezoelectric porcelain composition
Rhee et al. Investigation of high frequency (2.45 GHz, 30 GHz) processing of Pb-based piezoelectrics for ultrasound transducers
JP3111564B2 (en) Piezoelectric ceramic composition
JP3125590B2 (en) High frequency dielectric ceramic composition
JP3239778B2 (en) Piezoelectric ceramic composition
JPH03232755A (en) Production of piezoelectric porcelain
JP3239510B2 (en) Piezoelectric ceramic composition