JPS6050006B2 - High dielectric constant porcelain composition - Google Patents
High dielectric constant porcelain compositionInfo
- Publication number
- JPS6050006B2 JPS6050006B2 JP57097932A JP9793282A JPS6050006B2 JP S6050006 B2 JPS6050006 B2 JP S6050006B2 JP 57097932 A JP57097932 A JP 57097932A JP 9793282 A JP9793282 A JP 9793282A JP S6050006 B2 JPS6050006 B2 JP S6050006B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- temperature
- high dielectric
- present
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明はセラミックコンデンサおよび電歪素子などの用
途に適した温度特性のすぐれた高誘電率磁器組成物に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high dielectric constant ceramic composition with excellent temperature characteristics suitable for use in ceramic capacitors, electrostrictive elements, and the like.
従来、上記の用途には、BaTiO。Conventionally, BaTiO has been used for the above applications.
、BaSnO3、CaTiO。などを主成分とし、これ
を種々の添加物などで変性した磁器が実用化されている
。これらの磁器は常温付近の誘電率を大きくすると誘電
率の温度変化率が大きくなり、一方、誘電率の温度変化
率を小さくすると常音の誘電率が小さくなり、誘電率が
大きくかつ誘電率の温度変化率の小さい磁器を得ること
は困難であつた。本発明はこのような欠点を改善し、誘
電率が大きく、かつ誘電率の温度変化率が小さい磁器組
成物を提供するものてある。すなわち、本発明の組成物
はXPbNi、I3Nb2hO3−(1−X)Pb2’
n、l3Nb2laO3(ただし、0.2≦X≦0.8
)で示される組成(Pb原子の15%以下をBr、Ca
およびBa原子のうちの一種以上で置換した組成を含む
)からなるか、またはこれを主成分とすることを特徴と
する高誘電率磁器組成物てある。誘電材料の具備すべき
特性はその用途により異なるが、セラミックコンデンサ
および電歪素子などでは誘電率が大きく、かつその温度
変化率の小さい材料が要求される。, BaSnO3, CaTiO. Porcelain made by modifying this with various additives has been put into practical use. For these porcelains, increasing the dielectric constant around room temperature increases the temperature change rate of the dielectric constant, while decreasing the temperature change rate of the dielectric constant decreases the dielectric constant at normal temperature. It has been difficult to obtain porcelain with a small rate of temperature change. The present invention improves these drawbacks and provides a ceramic composition that has a large dielectric constant and a small rate of change in dielectric constant with temperature. That is, the composition of the present invention contains XPbNi, I3Nb2hO3-(1-X)Pb2'
n, l3Nb2laO3 (however, 0.2≦X≦0.8
) (15% or less of Pb atoms are Br, Ca
and a composition containing one or more of Ba atoms substituted with one or more of the following. The characteristics that a dielectric material should have vary depending on its use, but materials such as ceramic capacitors and electrostrictive elements require a material with a large dielectric constant and a small rate of temperature change.
なお、誘電率が大きいことはコンデンサなどの小形化に
重要である。また広い温度範囲で安定した特性を得るた
めには材料定数特に誘電率の温度変化率を小さくする必
要がある。本発明はこのような用途に適する磁器組成物
を提供する。以下に本発明を実施例により説明する。実
施例 1原料としてPbO9Ni9Nb2O59ZnO
9BaCO3、SrCO。Note that a high dielectric constant is important for downsizing capacitors and the like. Furthermore, in order to obtain stable characteristics over a wide temperature range, it is necessary to reduce the temperature change rate of material constants, especially the dielectric constant. The present invention provides a porcelain composition suitable for such uses. The present invention will be explained below using examples. Example 1 PbO9Ni9Nb2O59ZnO as raw material
9BaCO3, SrCO.
、CaCO。を用いて、これらを第1表に示した組成比
に秤量し混合したものを850℃で2時間仮焼してから
、ボールミルで湿式粉砕した。粉砕したものを乾燥した
のち、ポリビニルアルコール・の水溶液をバインダとし
て直径137wt)長さ約10wlの円柱状に加圧成形
し、これをマグネシア磁器製容器に入れて、980〜1
1600Cで2時間焼成した。焼成した磁器を厚さ1=
に切断し、この両面に電極としてCr−Auを蒸着した
のち誘電率(Eに)・と誘電正接(D)を1kH2で室
温に於いて測定した。誘電率の温度変化率は20゜Cを
基準として−25℃〜85℃の範囲で測定した。その結
果を第1表に示す。第1表でNO.lと17は本発明の
範囲外の実施例てあり、NO.2〜16は本発明の実施
例である。, CaCO. These were weighed and mixed in the composition ratios shown in Table 1 using a 100% polyester, calcined at 850° C. for 2 hours, and then wet-pulverized using a ball mill. After drying the pulverized material, it was pressure-molded into a cylindrical shape with a diameter of 137 wt and a length of about 10 wl using an aqueous solution of polyvinyl alcohol as a binder, and this was placed in a magnesia porcelain container.
It was fired at 1600C for 2 hours. Thickness of fired porcelain is 1=
After cutting Cr--Au as electrodes on both sides, the dielectric constant (E) and dielectric loss tangent (D) were measured at 1 kHz at room temperature. The temperature change rate of dielectric constant was measured in the range of -25°C to 85°C with 20°C as a reference. The results are shown in Table 1. No. 1 in Table 1. No. 1 and No. 17 are examples outside the scope of the present invention. 2 to 16 are examples of the present invention.
第1表から明らかなように、本発明の範囲内の組成物よ
りなる磁器は、大きな誘電率(εr)(4080〜81
80)と比較的小さな誘電率の温度変化率(−25〜8
5℃の温度範囲で−51〜78%)を示す。すなわち、
これは、XPbNlll3Nb2l3O3−(1−X)
PbZnl/3NY)2ノ。03系の限られた範囲内(
X=0.2〜0.8)で4000以上の大きな誘電率を
示すものである。As is clear from Table 1, the porcelain made of the composition within the scope of the present invention has a large dielectric constant (εr) (4080-81
80) and a relatively small temperature change rate of dielectric constant (-25 to 8
-51% to 78%) in the temperature range of 5°C. That is,
This is XPbNlll3Nb2l3O3-(1-X)
PbZnl/3NY) 2no. Within the limited range of the 03 series (
X=0.2 to 0.8), it exhibits a large dielectric constant of 4000 or more.
また、焼成温度が980〜1140℃の範囲内であり、
従来のBaTlO3系材料に比べていちじるしく低いこ
とも本発明の特長である。以上のように、本発明の組成
物は誘電率が大きく、かつその温度変化率が小さく、更
には焼成温一度が低いという特長をもつため、セラミッ
クコンデンサ用組成物、特に積層コンデンサ用材料とし
て工業的価値が高いものである。Further, the firing temperature is within the range of 980 to 1140°C,
Another feature of the present invention is that it is significantly lower than conventional BaTlO3-based materials. As described above, the composition of the present invention has a large dielectric constant, a small temperature change rate, and a low firing temperature. It is of high value.
実施例2
実施例1に記載した方法て製作した円板状試料の両電極
間に電圧(4).01Hzて測定)を印加しそのときの
試料の厚さ方向の電歪を差動トランスを用いて測定した
。Example 2 Voltage (4) between both electrodes of a disk-shaped sample manufactured by the method described in Example 1. 01 Hz) was applied, and the electrostriction in the thickness direction of the sample at that time was measured using a differential transformer.
歪の測定は試料をシリコン油中につけて行なつた。NO
.3と5の試料では印加電圧が20KV/C7!の場合
に電歪は室温でそれぞれ0.48X10−3と0.39
×10−3であつた。また、この歪の温度による変化は
−20〜60℃の温度範囲てそれぞれ11%と23%で
あつた。本発明の組成物は電歪が大きく、かつ歪の温度
による変化が小さいため、VTRオートトラッキング用
ヘッド駆動素子,ミラー制御素子,貼り合わせ型のたわ
み素子などの各種の変化素子に適している。以上のよう
に本発明の高誘電率磁器組成物は、誘電率が大きく、か
つ誘電率の温度による変化が小さく、焼成温度もいちじ
るしく低いため、セラミックコンデンサ用材料として有
用であるとともに電歪が大きくかつその温度による変化
が小さいという特長を持つため、各種の変位素子用材料
としても利用価値が高いものである。Strain was measured by immersing the sample in silicone oil. NO
.. For samples 3 and 5, the applied voltage was 20KV/C7! In the case of , the electrostriction is 0.48X10-3 and 0.39 respectively at room temperature
It was ×10-3. Further, the change in this strain due to temperature was 11% and 23%, respectively, in the temperature range of -20 to 60°C. Since the composition of the present invention has a large electrostriction and a small change in strain due to temperature, it is suitable for various variable elements such as a head drive element for VTR auto-tracking, a mirror control element, and a bonded type flexible element. As described above, the high dielectric constant ceramic composition of the present invention has a large dielectric constant, a small change in dielectric constant due to temperature, and a significantly low firing temperature, so it is useful as a material for ceramic capacitors and has a large electrostriction. Moreover, since it has the feature of small change due to temperature, it has high utility value as a material for various displacement elements.
なお、本発明でxの値が0.2未満とXの値が0.8を
超え組成、およびPb(7)Sr,BaならびにCaの
うちの少なくとも一つによる置換が15%を超える組成
は、誘電率が小さくなるため、本発明の範囲から除き、
本発明の範囲を誘電率が4000以上の組成に限定した
。In addition, in the present invention, compositions in which the value of x is less than 0.2, the value of , excluded from the scope of the present invention because the dielectric constant becomes small.
The scope of the present invention is limited to compositions having a dielectric constant of 4000 or more.
Claims (1)
−X)PbZn_1/_3Nb_2/_3O_3(ただ
し、0.2≦X≦0.8)で示される組成物からなり、
またはこの組成物を主成分とすることを特徴とする高誘
電率磁器組成物。 2 Pb原子の15%以下をSr、Ca及びBa原子の
うちの一種以上で置換したことを特徴とする特許請求の
範囲第1項に記載の高誘電率磁器組成物。[Claims] 1 XPbNi_1/_3Nb_2/_3O_3-(1
-X) PbZn_1/_3Nb_2/_3O_3 (however, 0.2≦X≦0.8),
Or a high dielectric constant ceramic composition characterized by having this composition as a main component. 2. The high dielectric constant ceramic composition according to claim 1, wherein 15% or less of the Pb atoms are replaced with one or more of Sr, Ca, and Ba atoms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57097932A JPS6050006B2 (en) | 1982-06-07 | 1982-06-07 | High dielectric constant porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57097932A JPS6050006B2 (en) | 1982-06-07 | 1982-06-07 | High dielectric constant porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58214201A JPS58214201A (en) | 1983-12-13 |
| JPS6050006B2 true JPS6050006B2 (en) | 1985-11-06 |
Family
ID=14205441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57097932A Expired JPS6050006B2 (en) | 1982-06-07 | 1982-06-07 | High dielectric constant porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6050006B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2566995B2 (en) * | 1986-11-04 | 1996-12-25 | 株式会社東芝 | High dielectric constant porcelain composition and ceramic capacitor |
| JP2762309B2 (en) * | 1989-12-22 | 1998-06-04 | マルコン電子株式会社 | Dielectric ceramic composition and electronic component using the same |
-
1982
- 1982-06-07 JP JP57097932A patent/JPS6050006B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58214201A (en) | 1983-12-13 |
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