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JPS6131926B2 - - Google Patents
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JPS6131926B2 - - Google Patents

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Publication number
JPS6131926B2
JPS6131926B2 JP57097933A JP9793382A JPS6131926B2 JP S6131926 B2 JPS6131926 B2 JP S6131926B2 JP 57097933 A JP57097933 A JP 57097933A JP 9793382 A JP9793382 A JP 9793382A JP S6131926 B2 JPS6131926 B2 JP S6131926B2
Authority
JP
Japan
Prior art keywords
dielectric constant
temperature
present
porcelain
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57097933A
Other languages
Japanese (ja)
Other versions
JPS58214202A (en
Inventor
Masamitsu Nishida
Shunichiro Kawashima
Ichiro Ueda
Hiroshi Oochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57097933A priority Critical patent/JPS58214202A/en
Publication of JPS58214202A publication Critical patent/JPS58214202A/en
Publication of JPS6131926B2 publication Critical patent/JPS6131926B2/ja
Granted legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明はセラミツクコンデンサおよび電歪素子
などの用途に適した温度特性のすぐれた高誘電率
磁器に関するものである。 従来、上記の用途には、BaTiO3,BaSnO3
CaTiO3などを主成分とし、これを種々の添加物
などで変性した磁器が実用化されている。これら
の磁器は常温付近の誘電率を大きくすると誘電率
の温度変化率が大きくなり、一方、誘電率の温度
変化率を小さくすると常温の誘電率が小さくな
り、誘電率が大きく、かつ誘電率の温度変化率の
小さい磁器を得ることは困難であつた。 本発明はこのような欠点を改善し、誘電率が大
きく、かつ誘電率の温度変化率が小さい磁器材料
を提供するものである。すなわち、本発明は XPbNi1/3Nb2/3O3−YPbTiO3
ZBaZn1/3Nb2/3O3を主成分とする磁器組成物の
うち、PbNi1/3Nb2/3O3,PbTiO3
BaZn1/3Nb2/3O3を頂点とする三角座標で、組
成A,B,C,Dを頂点とする四角形内の組成物
からなり、またはこの組成物を主成分とする高誘
電率磁器(ただし、X+Y+Z=100において、
AはX=88,Y=11,Z=1,BはX=0,Y=
55,Z=45,CはX=0,Y=70,Z=30,Dは
X=58,Y=41,Z=1〔モル%〕である。ま
た、Pbの20モル%以下をSr,Ca,Baのうちの一
種以上で置換した組成も含む)を提供する。 誘電材料の具備すべき特性はその用途により異
なるが、セラミツクコンデンサおよび電歪素子な
どでは誘電率が大きく、かつその温度変化率の小
さい材料が要求される。なお、誘電率が大きいこ
とはコンデンサなどの小形化に重要である。また
広い温度範囲で安定した特性を得るためには、材
料定数時に誘電率の温度変化率を小さくする必要
がある。本発明はこのような用途に適する高誘電
率磁器を提供する。以下本発明を実施例により説
明する。 実施例 1 原料としてPbO,NiO,Nb2O5,TiO2,ZnO,
BaCO3,SrCO3,CaCO3を用いて、これらを第1
表に示した組成比に秤量し混合したものを850℃
で2時間仮焼してから、ボールミルで湿式粉砕し
た。粉砕したものを乾燥したのち、ポリビニルア
ルコールの水溶液をバインダとして直径13mm、長
さ約10mmの円柱状に加圧成形し、これをマグネシ
ア磁器容器を入れて、1150〜1300℃で2時間焼成
した。焼成した磁器を厚さ1mmに切断しこの両面
に電極としてCr−Auを蒸着したのち誘電率(ε
r)と誘電正接Dを1KHzで室温に於いて測定し
た。誘電率の温度変化率は20℃を基準として−25
〜85℃の範囲で測定した。その結果を第1表に示
す。
The present invention relates to a high dielectric constant ceramic having excellent temperature characteristics suitable for use in ceramic capacitors, electrostrictive elements, and the like. Conventionally, BaTiO 3 , BaSnO 3 ,
Porcelain containing CaTiO 3 as its main component and modified with various additives has been put into practical use. For these porcelains, increasing the dielectric constant around room temperature increases the temperature change rate of the dielectric constant, while decreasing the temperature change rate of the dielectric constant decreases the dielectric constant at room temperature. It has been difficult to obtain porcelain with a small rate of temperature change. The present invention aims to improve these drawbacks and provide a ceramic material that has a large dielectric constant and a small rate of change in dielectric constant with temperature. That is, the present invention provides XPbNi 1/3 Nb 2/3 O 3 −YPbTiO 3
Among the ceramic compositions mainly composed of ZBaZn 1/3 Nb 2/3 O 3 , PbNi 1/3 Nb 2/3 O 3 , PbTiO 3 ,
High dielectric constant composed of compositions in a rectangle with compositions A, B, C, and D as vertices in triangular coordinates with BaZn 1/3 Nb 2/3 O 3 as the vertices, or with this composition as the main component Porcelain (however, at X+Y+Z=100,
A is X=88, Y=11, Z=1, B is X=0, Y=
55, Z=45, C has X=0, Y=70, Z=30, and D has X=58, Y=41, Z=1 [mol%]. The present invention also includes compositions in which 20 mol% or less of Pb is replaced with one or more of Sr, Ca, and Ba. The characteristics that a dielectric material should have vary depending on its use, but materials such as ceramic capacitors and electrostrictive elements require a material with a large dielectric constant and a small rate of temperature change. Note that a high dielectric constant is important for downsizing capacitors and the like. In addition, in order to obtain stable characteristics over a wide temperature range, it is necessary to reduce the rate of change in dielectric constant with temperature when the material is constant. The present invention provides high dielectric constant porcelain suitable for such uses. The present invention will be explained below with reference to Examples. Example 1 Raw materials PbO, NiO, Nb 2 O 5 , TiO 2 , ZnO,
Using BaCO 3 , SrCO 3 , and CaCO 3 , these
Weighed and mixed the composition ratio shown in the table and heated it to 850℃.
After calcining for 2 hours, the mixture was wet-pulverized in a ball mill. After drying the pulverized product, it was pressure-molded into a cylindrical shape with a diameter of 13 mm and a length of about 10 mm using an aqueous solution of polyvinyl alcohol as a binder, which was placed in a magnesia porcelain container and fired at 1150 to 1300°C for 2 hours. The fired porcelain was cut into 1 mm thick pieces, Cr-Au was deposited on both sides as electrodes, and the dielectric constant (ε
r) and dielectric loss tangent D were measured at 1 KHz and room temperature. Temperature change rate of dielectric constant is -25 with reference to 20℃
Measured in the range of ~85°C. The results are shown in Table 1.

【表】【table】

【表】 第1表でNo.1,12,21,26は本発明の範囲外の
実施例であり、No.2〜11,13〜20,22〜25は本発
明の範囲内の実施例である。 第1表から明らかなように本発明の範囲内の組
成物よりなる磁器は大きな誘電率(3040〜
13950)と比較的小さな誘電率の温度変化率(−
25〜85℃の温度範囲で−55〜65%)を示す。 本発明では、BaZn1/3Nb2/3O3成分が
PbNi1/3Nb2/3O3−PbTiO3−BaZn1/3Nb2/3O3
系において、キユリー点付近での温度による誘電
率の急激な変化を緩和させる働きをするものであ
り、その結果、誘電率の温度による変化の小さい
組成物が得られる。また、本発明でPbをSr,
Ca、およびBaのいずれか一種以上で置換するこ
とにより、誘電率の温度による変化を小さくでき
るとともに、その温度勾配を変えることができる
ものである。 以上のように、本発明の組成物は誘電率が大き
く、かつその温度変化率が小さいため、セラミツ
クコンデンサ材料として有用である。 実施例 2 実施例1に記載した方法で作製した円板状試料
の両電極間に電圧(0.01Hzで測定)を印加し、そ
のときの試料の厚さ方向の電歪を差動トランスを
用いて測定した。なお、試料はシリコン油中につ
けて測定した。第1表のNo.4,6,23の試料で
は、印加電圧が20KV/cmの場合に、厚さの変化
(歪)はそれぞれ1.0×10-3,0.85×10-3,0.88×
10-3であつた。また、この歪の温度による変化は
−20〜60℃の温度範囲で、それぞれ最大で29%,
18%,34%であつた。以上のように、本発明の組
成物は、電歪が大きく、かつ歪の温度による変化
の小さい磁器が得られるため、VTRオートトラ
ツキング用ヘツド駆隅素子ミラー制御素子、貼り
合わせ型の変位素子などの各種の変位素子に適し
ている。 すなわち、本発明の高誘電率磁器は誘電率が大
きくかつその温度による変化が小さいだけでなく
電歪による歪が大きくかつその温度による変化が
小さい磁器が得られるため、セラミツクコンデン
サや各種の変位素子などの用途に工業的価値があ
る。 なお、本発明でXがモル%未満では誘電率の温
度による変化を小さくする効果が少ないため、ま
た図で組成A,B,C,Dを頂点とする四辺形の
領域外の組成物は誘電率が小さくなるため、一
方、PbのSr,Ba,Caによる置換が20モル%を越
える組成では誘電率が小さくなるため本発明の範
囲から除き、本発明の範囲は誘電率が3000以上の
組成に限定した。なお、頂点AはX=88,Y=
11,Z=1であり、頂点BはX=0,Y=55,Z
=45、頂点CはX=0,Y=70,Z=30,頂点D
はX=58,Y=41,Z=1(単位はいずれもモル
%)である。
[Table] In Table 1, Nos. 1, 12, 21, and 26 are examples outside the scope of the present invention, and Nos. 2 to 11, 13 to 20, and 22 to 25 are examples within the scope of the present invention. It is. As is clear from Table 1, the porcelain made of the composition within the scope of the present invention has a large dielectric constant (3040~
13950) and a relatively small temperature change rate of dielectric constant (−
-55% to 65% in the temperature range of 25 to 85°C). In the present invention, the BaZn 1/3 Nb 2/3 O 3 component is
PbNi 1/3 Nb 2/3 O 3 −PbTiO 3 −BaZn 1/3 Nb 2/3 O 3
In the system, it acts to alleviate the sudden change in dielectric constant due to temperature near the Curie point, and as a result, a composition whose dielectric constant changes little due to temperature can be obtained. In addition, in the present invention, Pb can be replaced with Sr,
By substituting one or more of Ca and Ba, the change in dielectric constant due to temperature can be reduced, and the temperature gradient thereof can be changed. As described above, the composition of the present invention has a large dielectric constant and a small rate of change with temperature, and is therefore useful as a ceramic capacitor material. Example 2 A voltage (measured at 0.01 Hz) was applied between both electrodes of the disk-shaped sample prepared by the method described in Example 1, and the electrostriction in the thickness direction of the sample at that time was measured using a differential transformer. It was measured using Note that the sample was immersed in silicone oil for measurement. For samples No. 4, 6, and 23 in Table 1, when the applied voltage is 20 KV/cm, the changes in thickness (strain) are 1.0×10 -3 , 0.85×10 -3 , and 0.88×, respectively.
It was 10 -3 . Additionally, the temperature-dependent change in this strain is up to 29% and 29%, respectively, in the temperature range of -20 to 60℃.
The percentages were 18% and 34%. As described above, the composition of the present invention has a large electrostriction and can produce a porcelain whose strain changes little with temperature. Suitable for various displacement elements such as In other words, the high dielectric constant ceramic of the present invention not only has a large dielectric constant and a small change due to temperature, but also has a large strain due to electrostriction and a small change due to temperature. It has industrial value in applications such as In addition, in the present invention, if X is less than mol%, the effect of reducing the change in dielectric constant due to temperature is small, and the compositions outside the rectangular area with compositions A, B, C, and D as vertices in the figure are dielectric. On the other hand, compositions in which the substitution of Pb with Sr, Ba, and Ca exceeds 20 mol % have a small dielectric constant, and are therefore excluded from the scope of the present invention. limited to. Note that vertex A is X=88, Y=
11, Z = 1, and vertex B is X = 0, Y = 55, Z
=45, vertex C is X=0, Y=70, Z=30, vertex D
is X=58, Y=41, Z=1 (all units are mol%).

【図面の簡単な説明】[Brief explanation of the drawing]

図はこの発明にかかる高誘電率磁器の組成図で
ある。
The figure is a composition diagram of the high dielectric constant ceramic according to the present invention.

Claims (1)

【特許請求の範囲】 1 XPbNi1/3Nb2/3O3−YPbTiO3
ZBaZn1/3Nb2/3O3を主成分とする磁器組成物
(ただし、X+Y+Z=100)のうち、
PbNi1/3Nb2/3O3,PbTiO3,BaZn1/3Nb2/3O3
を頂点とする三角座標で、組成A,B,C,Dを
頂点とする四辺形の領域内の組成物からなり、ま
たはその組成物を主成分とすることを特徴とする
高誘電率磁器。 ただし、AはX=88,Y=11,Z=1,BはX
=0,Y=55,Z=45,CはX=0,Y=70,Z
=30,DはX=58,Y=41,Z=1(モル%)。 2 Pb原子の20%以下をSr,Ca、およびBa原子
のうちの一種以上で置換したことを特徴とする特
許請求の範囲第1項に記載の高誘電率磁器。
[Claims] 1 XPbNi 1/3 Nb 2/3 O 3 −YPbTiO 3
Among the porcelain compositions containing ZBaZn 1/3 Nb 2/3 O 3 as the main component (X+Y+Z=100),
PbNi 1/3 Nb 2/3 O 3 , PbTiO 3 , BaZn 1/3 Nb 2/3 O 3
A high dielectric constant porcelain comprising a composition within a rectangular region having compositions A, B, C, and D as vertices in triangular coordinates having vertices at , or having the composition as a main component. However, A is X=88, Y=11, Z=1, B is X
=0, Y=55, Z=45, C is X=0, Y=70, Z
=30, D is X=58, Y=41, Z=1 (mol%). 2. The high dielectric constant ceramic according to claim 1, wherein 20% or less of the Pb atoms are replaced with one or more of Sr, Ca, and Ba atoms.
JP57097933A 1982-06-07 1982-06-07 High dielectric constant porcelain Granted JPS58214202A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57097933A JPS58214202A (en) 1982-06-07 1982-06-07 High dielectric constant porcelain

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57097933A JPS58214202A (en) 1982-06-07 1982-06-07 High dielectric constant porcelain

Publications (2)

Publication Number Publication Date
JPS58214202A JPS58214202A (en) 1983-12-13
JPS6131926B2 true JPS6131926B2 (en) 1986-07-23

Family

ID=14205469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57097933A Granted JPS58214202A (en) 1982-06-07 1982-06-07 High dielectric constant porcelain

Country Status (1)

Country Link
JP (1) JPS58214202A (en)

Also Published As

Publication number Publication date
JPS58214202A (en) 1983-12-13

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