JPS6051085B2 - optical device - Google Patents
optical deviceInfo
- Publication number
- JPS6051085B2 JPS6051085B2 JP49032643A JP3264374A JPS6051085B2 JP S6051085 B2 JPS6051085 B2 JP S6051085B2 JP 49032643 A JP49032643 A JP 49032643A JP 3264374 A JP3264374 A JP 3264374A JP S6051085 B2 JPS6051085 B2 JP S6051085B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- layer
- refractive index
- dielectric
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
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- Optical Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明は第1の誘電体層と第1の誘電体層より屈折率
の低い第2の誘電体層と、金属層を備えた薄膜形の光学
装置、例えは光伝送路装置、その他に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film optical device, for example, a thin film optical device comprising a first dielectric layer, a second dielectric layer having a lower refractive index than the first dielectric layer, and a metal layer. Regarding transmission line equipment and others.
この種の薄膜形光学装置例えば光伝送路装置として、
屈折率が比較的小さい誘電体基板上に比較的屈折率の大
きい誘電体層を積層し、所望の光伝送経路に沿つて誘電
体層をエッチングして残した構造が知られている。This type of thin film optical device, for example, as an optical transmission line device,
A structure is known in which a dielectric layer having a relatively high refractive index is laminated on a dielectric substrate having a relatively low refractive index, and the dielectric layer is etched and left along a desired optical transmission path.
しかしこのような光伝送路では、エッチング側面すな
わち横方向境界面の境界不整が光の波長程度で存在する
ため、この面精度の悪さが大きな光散乱損失を引き起こ
し、光伝送路中の伝送損失を大きくしていた。However, in such an optical transmission line, the etched side surface, that is, the lateral boundary surface, has boundary irregularities on the order of the wavelength of light, so this poor surface precision causes a large light scattering loss, which increases the transmission loss in the optical transmission line. I was making it big.
またこれと類した構造で光反射器あるいは光分割器を作
成した場合も、境界面での面精度の悪さが大きな光散乱
損失を招き、効率がよくなかつた。 この欠点を改良す
る方法として、比較的大きな屈折率を有する誘電体層と
所望のパターンの金属層とを積層した構成により達成し
ようとする方法があるが伝送損失の点でまだまだ不十分
な点が多かつた。Furthermore, when a light reflector or a light splitter was created with a similar structure, the efficiency was not good because the poor surface precision at the interface caused a large light scattering loss. As a method to improve this drawback, there is a method that attempts to achieve this by laminating a dielectric layer with a relatively large refractive index and a metal layer with a desired pattern, but it is still insufficient in terms of transmission loss. It was a lot.
本発明は、これらの欠点を緩和することを目的とし、
比較的大きな屈折率を有する第1の誘電体層と、第1の
誘電体層の上に積層した比較的屈折率の低い第2の誘電
体層と、所望のパターンの金属層とを積層した構成によ
つて達成したものであり、以下図面について詳細に説明
する。The present invention aims to alleviate these drawbacks,
A first dielectric layer having a relatively large refractive index, a second dielectric layer having a relatively low refractive index laminated on the first dielectric layer, and a metal layer having a desired pattern are laminated. This has been achieved by the configuration, and will be described in detail below with reference to the drawings.
第1図は本発明の一実施例を示す光伝送路装置の平面
図、第2図は第1図のX−Y方向に沿つた断面図である
。FIG. 1 is a plan view of an optical transmission line device showing an embodiment of the present invention, and FIG. 2 is a sectional view taken along the X-Y direction of FIG. 1.
第1図と第2図において、1は屈折率が比較的小さい誘
電体基板、2は屈折率が比較的大きい誘電体層、3は屈
折率が比較的小さい誘電体層、4は空気、5は金属層、
6は光伝送路、7は入射ビーム光を示している。 誘電
体層2中の入射ビーム光7との入出力光の結合は、プリ
ズムカプラー8a,8bを介して行なうことができる。1 and 2, 1 is a dielectric substrate with a relatively low refractive index, 2 is a dielectric layer with a relatively high refractive index, 3 is a dielectric layer with a relatively low refractive index, 4 is air, and 5 is a dielectric layer with a relatively low refractive index. is a metal layer,
Reference numeral 6 indicates an optical transmission path, and reference numeral 7 indicates an incident light beam. Coupling of the input and output light with the incident beam of light 7 in the dielectric layer 2 can take place via prism couplers 8a, 8b.
またNl,n2,rI3,n4,n5は順次それぞれ誘
電体基板1、誘電体層2、誘電体層3、空気牡金属層5
の物質の光の屈折率である。この実施例では誘電体基板
1、誘電体層2、誘電体層3、金属層5として順次それ
ぞれ、SlO2基板、Al2O3層、A1層を用い、S
iO2基板1上に高周波スパッタ法(あるいはC.V.
D法その他の方法)でAl2O3層2を数千A付着させ
、次にSiO2層3を2の誘電体と同様高周波スパッタ
法(あるいはC.V.D法その他の方法)で数千A付着
させ、さらにA1層5を数千Aマスク蒸着法(あるいは
蒸着後のホトエッチング法等)によつて付着させて構成
している。Further, Nl, n2, rI3, n4, and n5 are respectively a dielectric substrate 1, a dielectric layer 2, a dielectric layer 3, and an air metal layer 5.
is the refractive index of light of the substance. In this example, a SlO2 substrate, an Al2O3 layer, and an A1 layer are used as the dielectric substrate 1, dielectric layer 2, dielectric layer 3, and metal layer 5, respectively.
A high frequency sputtering method (or C.V.
D method or other method) to deposit the Al2O3 layer 2 of several thousand amperes, and then, like the dielectric material 2, deposit the SiO2 layer 3 of several thousand amperes by high frequency sputtering method (or C.V.D method or other method). Furthermore, the A1 layer 5 is deposited by a several-thousand-A mask evaporation method (or a photo-etching method after evaporation, etc.).
このような構成で誘電体層2の膜厚と誘電体層3の膜厚
を適当に選ぶと、金属層5と接した誘電体層3の下の位
置における誘電体層2と等価屈折率すなわち領域Aにお
ける誘電体層2の等価屈折率が、空気4が接したB領域
での誘電体層3の下の位置における誘電体層2の等価屈
折率よりも低くなり光伝送路が形成されると共に単一伝
播モードの光伝送路として伝送損失が小さいものが得ら
れる。If the thickness of the dielectric layer 2 and the dielectric layer 3 are appropriately selected in such a configuration, the equivalent refractive index of the dielectric layer 2 at a position below the dielectric layer 3 in contact with the metal layer 5, i.e. The equivalent refractive index of the dielectric layer 2 in region A is lower than the equivalent refractive index of the dielectric layer 2 at a position below the dielectric layer 3 in region B, which is in contact with air 4, and an optical transmission path is formed. At the same time, a single propagation mode optical transmission line with low transmission loss can be obtained.
なお、誘電体層2として3000A(7)Al2O3層
を、誘電体層3として3000へのSiO2層を用い、
第2図における金属層の欠除部分の横方向幅を6.5μ
mとした場合、TEOモードに対する減衰量は4dB/
Cm程度となる。Note that a 3000A (7) Al2O3 layer was used as the dielectric layer 2, and a 3000A (7) SiO2 layer was used as the dielectric layer 3.
The lateral width of the missing part of the metal layer in Figure 2 is 6.5 μm.
m, the attenuation for TEO mode is 4dB/
It will be about CM.
次に、誘電体層2の上に誘電体層3を設けることにより
、誘電体層2における光の伝送損失が低下する理由につ
いて述べる。Next, the reason why the light transmission loss in the dielectric layer 2 is reduced by providing the dielectric layer 3 on the dielectric layer 2 will be described.
誘電体2中の光の伝播定数β、光の減衰定数αと誘電体
2の膜厚T2、誘電体3の膜厚bとの関係は、b=0と
した良く知られている(例えばApplledOpti
cs第12巻第5号A.Reisinger参照)関係
式の拡張として次式で示すことができる。ここで、γ4
=1,γ3。=1,γ53=1(TEモードの場合)場
合)
であり、λoは光の真空中での波長、ε1,E2,ε3
,j4,ε5は波長λ。The relationship between the propagation constant β of light in the dielectric 2, the attenuation constant α of light, the film thickness T2 of the dielectric 2, and the film thickness b of the dielectric 3 is well known with b=0 (for example, Applied Opti
cs Vol. 12 No. 5 A. (Reisinger)) The relational expression can be expressed as an extension of the following expression. Here, γ4
=1, γ3. = 1, γ53 = 1 (for TE mode), where λo is the wavelength of light in vacuum, ε1, E2, ε3
, j4, ε5 are wavelengths λ.
に対する誘電体基板1、誘電体層2、誘電体層3、空気
4、もしくは金属層5それぞれの物質の誘電率、T2は
光伝送路となる薄膜誘電体層の厚さ、Nは光の次数、N
l,n2,n3,n4,tはλ。に対する誘電体基板1
、誘電体層2、誘電体層3、空気牡もしくは金属層5そ
れぞれの物質の屈折率である。誘電体基板1、誘電体層
2、誘電体層3、金属層5の物質をそれぞれSlO2,
Al2O3,SiO2,,Alとして屈折率をn1=1
.48,n2=1.68,n3=1.48,n5=1.
2−J7.Oとして、また波長6328A(7)He−
Neレーザー光を用いて、誘電体層2の厚さを3000
A1誘電体層3の厚さを3000A1金属5の欠除部分
の横方向幅を6.?mとした場合、TEOモードの伝”
播光に対する減衰量は、4dB/C7rL程度となり誘
電体層3を設けない場合の85dB/Cm程度と比較し
て大巾に改善される。なお、誘電体層2中の入射ビーム
光7との入出力光の結合はプリズムカプラーの他に誘電
体層2の表面に回折格子を形成し入射ビーム光5との干
渉により行うこともできる。, the dielectric constant of the dielectric substrate 1, dielectric layer 2, dielectric layer 3, air 4, or metal layer 5, T2 is the thickness of the thin film dielectric layer that becomes the optical transmission path, and N is the order of light. , N
l, n2, n3, n4, t are λ. dielectric substrate 1 for
, the refractive index of each material of the dielectric layer 2, dielectric layer 3, air layer, or metal layer 5. The materials of the dielectric substrate 1, dielectric layer 2, dielectric layer 3, and metal layer 5 are SlO2,
As Al2O3, SiO2,,Al, the refractive index is n1=1
.. 48, n2=1.68, n3=1.48, n5=1.
2-J7. O, and wavelength 6328A(7)He-
The thickness of the dielectric layer 2 is reduced to 3000 mm using Ne laser light.
The thickness of the A1 dielectric layer 3 is 3000, and the lateral width of the removed portion of the A1 metal 5 is 6. ? If it is m, the legend of TEO mode”
The amount of attenuation for light dissemination is approximately 4 dB/C7rL, which is greatly improved compared to approximately 85 dB/Cm when the dielectric layer 3 is not provided. In addition to the prism coupler, the input/output light can be coupled with the incident beam 7 in the dielectric layer 2 by forming a diffraction grating on the surface of the dielectric layer 2 and interfering with the incident beam 5.
また、誘電体層2中に半導体レーザ等の活性層を埋め込
む構造にしても良い。また、第1図および第2図の如き
構成において・誘電体基板1と誘電体層2との屈折率差
か大きい程、誘電体層2中におけるA領域とB領域との
等価屈折率差が大きくなるので誘電体基板1を除いて空
気で代替させてもよい。Alternatively, an active layer such as a semiconductor laser may be embedded in the dielectric layer 2. In addition, in the configurations shown in FIGS. 1 and 2, the larger the refractive index difference between the dielectric substrate 1 and the dielectric layer 2, the greater the equivalent refractive index difference between the A region and the B region in the dielectric layer 2. Since it becomes large, the dielectric substrate 1 may be removed and replaced with air.
以上説明したように、本発明によれば横方向境・界面で
の光の散乱損失が小さく伝播光に対する減衰量が小さい
ため、伝送損失を少ないあるいは効率を高めることがで
き、あるいは容易に製作できる等の利点を有する。As explained above, according to the present invention, the scattering loss of light at lateral boundaries/interfaces is small and the amount of attenuation for propagating light is small, so transmission loss can be reduced or efficiency can be increased, or it can be manufactured easily. It has the following advantages.
ノ 第1図は本発明の一実施例を示す光伝送装置の平面
図、第2図は第1図のX−Y線に沿つた断面図である。FIG. 1 is a plan view of an optical transmission device showing an embodiment of the present invention, and FIG. 2 is a sectional view taken along the X-Y line in FIG. 1.
Claims (1)
電体層上に積層された比較的屈折率の小さい第2誘電体
層と、この第2誘電体層上に積層された金属層とを備え
、前記第1誘電体層中に形成すべき光伝送路に対応して
前記金属層の欠除部分が形成されていることを特徴とし
た光学装置。1. A first dielectric layer with a relatively high refractive index, a second dielectric layer with a relatively low refractive index laminated on the first dielectric layer, and a metal layer laminated on the second dielectric layer. 1. An optical device comprising a metal layer, wherein a cutout portion of the metal layer is formed corresponding to an optical transmission path to be formed in the first dielectric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49032643A JPS6051085B2 (en) | 1974-03-25 | 1974-03-25 | optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49032643A JPS6051085B2 (en) | 1974-03-25 | 1974-03-25 | optical device |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15659277A Division JPS6051682B2 (en) | 1977-12-27 | 1977-12-27 | Optical mode discriminator |
| JP15659377A Division JPS6051683B2 (en) | 1977-12-27 | 1977-12-27 | thin film optical lens |
| JP15659177A Division JPS6051681B2 (en) | 1977-12-27 | 1977-12-27 | light reflector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50126449A JPS50126449A (en) | 1975-10-04 |
| JPS6051085B2 true JPS6051085B2 (en) | 1985-11-12 |
Family
ID=12364519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49032643A Expired JPS6051085B2 (en) | 1974-03-25 | 1974-03-25 | optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6051085B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS539097B2 (en) * | 1972-02-25 | 1978-04-03 |
-
1974
- 1974-03-25 JP JP49032643A patent/JPS6051085B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50126449A (en) | 1975-10-04 |
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