JPS6055967B2 - ceramic resistor - Google Patents
ceramic resistorInfo
- Publication number
- JPS6055967B2 JPS6055967B2 JP55109389A JP10938980A JPS6055967B2 JP S6055967 B2 JPS6055967 B2 JP S6055967B2 JP 55109389 A JP55109389 A JP 55109389A JP 10938980 A JP10938980 A JP 10938980A JP S6055967 B2 JPS6055967 B2 JP S6055967B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- resistor
- resistance value
- ceramic resistor
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Thermistors And Varistors (AREA)
- Conductive Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
【発明の詳細な説明】
本発明はセラミック抵抗体に関し、抵抗値が非常に小
さく、かつ−５０℃〜＋１０００℃の温度範囲での抵抗
値の温度による変化が小さな抵抗体が容易に得られるよ
うにすることを目的とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ceramic resistor, and provides a method for easily obtaining a resistor having a very small resistance value and a small change in resistance value due to temperature in the temperature range of -50°C to +1000°C. The purpose is to
従来のセラミック抵抗体にはＳｉＣやＷを用いたもの
、あるいはＢａＴｉ０。Conventional ceramic resistors use SiC, W, or BaTi0.
系ＰＴＣサーミスタなどがあるが、このうちＳｉＣを用
いたものは温度による抵抗変化が非常に大きく、一定電
圧下において温度上昇とともに大きく電流が変動するた
め温度制御が難しい。Ｗを用いたものは１０００℃の温
度までの抵抗値上昇が約１０倍にものぼり、温度変化率
が小さい抵抗体と比較して、一定電圧を印加した場合、
所定の温度に達するまでの時間が長くかかる欠点がある
。またＷ抵抗体は非酸化性雰囲気で焼成しなければなら
ず、製造コストが高くつく。 ＢａＴｉＯ。系ＰＴＣサ
ーミスタは３００℃以上の温度になると急激に抵抗値が
上昇するため使用温度が限定される。 本発明は従来に
おける上述のような問題を解決しようとするものであり
以下に図面を用いその実施例を説明する。There are system PTC thermistors, but among these, those using SiC have a very large resistance change depending on temperature, and temperature control is difficult because the current fluctuates greatly as the temperature rises under a constant voltage. When using W, the resistance value increases by about 10 times up to a temperature of 1000°C, and when a constant voltage is applied, compared to a resistor with a small temperature change rate.
The drawback is that it takes a long time to reach a predetermined temperature. Furthermore, the W resistor must be fired in a non-oxidizing atmosphere, which increases manufacturing costs. BaTiO. The resistance value of PTC thermistors rapidly increases when the temperature exceeds 300° C., so the temperature at which they can be used is limited. The present invention is intended to solve the above-mentioned conventional problems, and embodiments thereof will be described below with reference to the drawings.
酸化亜鉛（ＺｎＯ）、酸化ガリウム（Ｇａ。 Zinc oxide (ZnO), gallium oxide (Ga.
Ｏ０）、酸化硅素（ＳｉＯ０）を後出の表の左側に示す
ように配合し、成形圧力５００に９／ｄで、長さ２５ｃ
ｍ）巾１．５α、厚み１．５ｃ７ｎの棒状体に成形し、
１３５０℃の温度で１時間焼成した。なお成形体の焼成
による収縮率は１９％であつた。得られた焼成体の両端
に銀電極を設け、比抵抗、抵抗値の温度変化率を測定し
た。その結果を次の表の右側に、各試料に対応させて示
す。なお表中※印を付した試料は比較例を示す。なおこ
こで、表における抵抗値の温度変化率は次の式より求め
た。O0), silicon oxide (SiO0) were mixed as shown on the left side of the table below, and the molding pressure was 500 and 9/d, and the length was 25cm.
m) Form into a rod-shaped body with a width of 1.5α and a thickness of 1.5c7n,
It was baked at a temperature of 1350°C for 1 hour. The shrinkage rate of the molded body upon firing was 19%. Silver electrodes were provided at both ends of the obtained fired body, and the specific resistance and rate of change in resistance value with temperature were measured. The results are shown on the right side of the table below, corresponding to each sample. The samples marked with * in the table are comparative examples. Here, the temperature change rate of the resistance value in the table was determined from the following formula.
式中Ｒ２Ｏは素子の温度が２０℃の時の抵抗値、Ｒｘ素
子の温度が−５０温Ｃ〜１０００℃の間で、２０℃の時
の抵抗値との差が最大なときの抵抗値をそれぞれあられ
す。In the formula, R2O is the resistance value when the element temperature is 20℃, and the resistance value when the Rx element temperature is between -50℃ and 1000℃ and the difference from the resistance value at 20℃ is the maximum. Hail each.
ここで、表中代表的な組成を有する試料の抵抗温度特性
を図に示す。Here, the resistance temperature characteristics of samples having typical compositions shown in the table are shown in the figure.
図中のＮＯ．は表中の試料ＮＯ．に対応する。表および
図かられかるように、ＺｒｌＯを主成分とし、全量中に
占める割合でＧａ２ＯＪが０．１〜８重量％含まれる組
成を有する抵抗体、同じくＺｎＯを主成分とし、全量中
に占める割合でＳｉＯ２が２〜６重量％含まれる組成を
有する抵抗体、ならびに同じくＺｎＯを主成分とし、全
量中に占める割合でＧａ２Ｏ３が０．１〜８重量％とＳ
ｉＯ２が２〜６重量％含まれる組成を有する抵抗体にお
いては、抵抗値が１０−３〜数Ω−ｄと非常に低く、か
つ抵抗値の温度変化率が５０％以下と小さく、特性のす
ぐれたものとなつている。No. in the diagram. is sample No. in the table. corresponds to As can be seen from the tables and figures, the resistor has a composition containing ZrlO as the main component and 0.1 to 8% by weight of Ga2OJ in the total amount, and a resistor that also has ZnO as the main component and has a composition of 0.1 to 8% by weight in the total amount. A resistor having a composition containing 2 to 6% by weight of SiO2, and a resistor having a composition mainly composed of ZnO with a proportion of 0.1 to 8% by weight of Ga2O3 in the total amount and S
A resistor with a composition containing 2 to 6% by weight of iO2 has a very low resistance value of 10-3 to several Ω-d, and a small rate of change in resistance value with temperature of 50% or less, and has excellent characteristics. It has become a common thing.
以上のような特性のすぐれた抵抗体は、棒形ヒータ．ア
ルミナ基板等に印刷して形成する面ヒータ．シート状に
成形した板ヒータ、あるいは電極材料として用いると有
用である。なおＺｎＯにＧａ２Ｏ３を添加する代りにＧ
ａ２（ＮＯ３）３を水に溶解させて添加しても焼成時に
Ｇａ２Ｏ３となるため同様な効果が得られる。以上のよ
うに本発明によれば抵抗値が非常に低く、かつ−５０〜
１０００℃の温度範囲における抵抗値変化が小さな抵抗
体を容易に得ることができる。A resistor with excellent characteristics as described above is a rod-shaped heater. A surface heater formed by printing on an alumina substrate, etc. It is useful when used as a plate heater formed into a sheet shape or as an electrode material. Note that instead of adding Ga2O3 to ZnO,
Even if a2(NO3)3 is dissolved in water and added, the same effect can be obtained because it becomes Ga2O3 during firing. As described above, according to the present invention, the resistance value is very low and -50 to
A resistor with a small change in resistance value in a temperature range of 1000° C. can be easily obtained.
図は本発明によるセラミック抵抗体の温度特性を示す図
である。The figure is a diagram showing the temperature characteristics of the ceramic resistor according to the present invention.
Claims (1)
〜０．８重量％Ｇａ＿２Ｏ＿３と、同じく全量中に占め
る割合で２〜６重量％のＳｉＯ＿２との少なくとも一方
が含まれたことを特徴とするセラミック抵抗体。1 ZnO is the main component, and the proportion of the total amount is 0.1
A ceramic resistor comprising at least one of ~0.8% by weight Ga_2O_3 and 2-6% by weight SiO_2 based on the total amount.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55109389A JPS6055967B2 (en) | 1980-08-08 | 1980-08-08 | ceramic resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55109389A JPS6055967B2 (en) | 1980-08-08 | 1980-08-08 | ceramic resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5734309A JPS5734309A (en) | 1982-02-24 |
| JPS6055967B2 true JPS6055967B2 (en) | 1985-12-07 |
Family
ID=14508989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55109389A Expired JPS6055967B2 (en) | 1980-08-08 | 1980-08-08 | ceramic resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6055967B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5632697B2 (en) * | 2010-10-12 | 2014-11-26 | 株式会社カネカ | Thin film solar cell |
-
1980
- 1980-08-08 JP JP55109389A patent/JPS6055967B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5734309A (en) | 1982-02-24 |
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