JPS6055966B2 - ceramic resistor - Google Patents
ceramic resistorInfo
- Publication number
- JPS6055966B2 JPS6055966B2 JP55109381A JP10938180A JPS6055966B2 JP S6055966 B2 JPS6055966 B2 JP S6055966B2 JP 55109381 A JP55109381 A JP 55109381A JP 10938180 A JP10938180 A JP 10938180A JP S6055966 B2 JPS6055966 B2 JP S6055966B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- resistance
- resistor
- ceramic resistor
- resistance value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 title claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Conductive Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
【発明の詳細な説明】
本発明はセラミック抵抗体に関し、比抵抗が非常に小
さく、かつ抵抗値の温度変化および経時変化が小さい抵
抗体が容易に得られるようにすることを目的とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ceramic resistor, and an object of the present invention is to easily obtain a resistor having a very low specific resistance and whose resistance value changes little with temperature and with time.
従来セラミック抵抗体にはＳｉＣやＷを用いたもの、あ
るいはＢａＴｉＯ、系ＰＴＣサーミスタなどがあるが、
このうち、ＳｉＣを用いたものは温度による抵抗変化が
非常に大きく、一定電圧下において、温度上昇と共に電
流が大きく変動するため温度制御が難しい。Ｗを用いた
ものは１０００℃の温度までの抵抗上昇が約１０＠にも
のぼり、温度変化率が小さい抵抗体と比較して一定電。
圧を印加した場合、所定の温度に達するまでの時間が長
くかかる欠点がある。またＷ抵抗体は非酸化性雰囲気で
焼成しなければならず、製造コストが高くっく。ＢａＴ
ｉＯ。系ＰＴＣサーミスタは３００℃以上の温度になる
と急激に抵抗が上昇するため使用温度が限定される。
本発明は、室温で０．８〜０．０１Ωａという低抵抗値
を有していて、−５０℃〜１０００℃の温度範囲での抵
抗温度変化率が±５０％以内と小さく、かつ７００℃の
温度で１００時間保時後の抵抗変化率が５０％以下と小
さな抵抗体が容易に得られるようにすることにより、上
述のような問題を解決しようとするものである。Conventional ceramic resistors include those using SiC and W, BaTiO, and PTC thermistors.
Among these, those using SiC have a very large resistance change due to temperature, and under a constant voltage, the current fluctuates greatly as the temperature rises, making temperature control difficult. Those using W have a resistance increase of about 10 @ up to a temperature of 1000°C, and have a constant voltage compared to resistors with a small temperature change rate.
When pressure is applied, there is a drawback that it takes a long time to reach a predetermined temperature. Further, W resistors must be fired in a non-oxidizing atmosphere, resulting in high manufacturing costs. BaT
iO. The resistance of PTC thermistors rapidly increases when the temperature exceeds 300° C., so the temperature at which they can be used is limited.
The present invention has a low resistance value of 0.8 to 0.01 Ωa at room temperature, a small resistance temperature change rate of within ±50% in the temperature range of -50°C to 1000°C, and The purpose is to solve the above-mentioned problems by making it possible to easily obtain a small resistor with a resistance change rate of 50% or less after being kept at a temperature for 100 hours.
以下に本発明の実施例を図面を用いて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
酸化亜鉛（ＺｎＯ）、酸化アルミニウム（Ａ１。Ｏ０）
、２酸化硅素（ＳｉＯ２）を後出の表の左側に示すよう
に配合し、成形圧力５００に９／ｃｌｔで、長さ２５ｃ
７■を）巾１．５ｃ７７を）厚み１．５ｃｍの棒状体に
成形し、１３５０℃の温度で１時間焼成した。なお成形
体の焼成にる収縮率は１９％であつた。得られた焼成体
の両端に銀電極を設け、比抵抗、抵抗値の温度変化率、
および７００℃の温度て１００ｙＩ！！ｆ間保持したと
きの抵抗の経時変化率を測定した。その結果を次の表の
右側に各試料に対応させて示す。なお表中※印を付した
試料は比較例を示す。なおここで、表における抵抗の温
度変化率は次の式より求めた。Zinc oxide (ZnO), aluminum oxide (A1.O0)
, silicon dioxide (SiO2) was blended as shown on the left side of the table below, the molding pressure was 500 and 9/clt, and the length was 25 cm.
7) was formed into a rod-shaped body with a width of 1.5 cm and a thickness of 1.5 cm, and baked at a temperature of 1350° C. for 1 hour. The shrinkage rate of the molded body during firing was 19%. Silver electrodes were installed at both ends of the obtained fired body, and specific resistance, temperature change rate of resistance value,
and 100yI at a temperature of 700℃! ! The rate of change in resistance over time was measured when the sample was held for a period of f. The results are shown on the right side of the table below, corresponding to each sample. The samples marked with * in the table are comparative examples. Here, the temperature change rate of resistance in the table was determined from the following formula.
式中Ｒ２Ｏは素子の温度が２０℃の時の抵抗値、Ｒｘ素
子の温度が−５００Ｃ−１０００℃の間で、２０℃の時
の抵抗値との差が最大な時の抵抗値をそれぞれあられす
。In the formula, R2O is the resistance value when the element temperature is 20℃, and the resistance value when the Rx element temperature is between -500C and 1000℃ and the difference from the resistance value at 20℃ is maximum. vinegar.
ここでまた、表中代表的な試料の抵抗温度特性を図に示
す。Here, the resistance-temperature characteristics of the representative samples in the table are also shown in the figure.
図中のＮＯ．は表中の試料ＮＯ．に対応する。表および
図かられかるように、Ｚｒ）ｏを主成分とし、全量中に
占める割合でＡｌ２Ｏ３が０．００１〜０．０１モル％
含まれる組成を有する抵抗体、ならびに同じくＺｎＯを
主成分とし、全量中に占める割合でＡｌ２Ｏ３が０．０
０１〜０．０１モル％またＳｉＯ２が２モル％以下それ
ぞれ含まれる組成を有する抵抗体においては、抵抗値が
０．０１〜０．８Ωｄと非常に低く、かつその温度変化
率が５０％以下と小さく、また経時変化率も同じく５０
％以下と小さく、特性のすぐれたものとなつている。以
上のような特性のすぐれた抵抗体は、棒形ヒータ．アル
ミナ基板等に印刷して形成する面ヒータ．シート状に成
形した板ヒータ、あるいは電極材料として用いると有用
である。なお、ＺｎＯにＡｌ２Ｏ３を添加する代りにＡ
１（ＮＯ３）３を水に溶解させて添加しても焼成時に．
Ａｌ２Ｏ３となるため同様な効果が得られる。以上のよ
うに本発明によれば抵抗値が非常に低くかつその−５０
〜１０００℃の温度範囲における抵抗値変化ならびに経
時変化がともに小さな抵抗体を容易に得ることができる
。No. in the diagram. is sample No. in the table. corresponds to As can be seen from the table and figure, Zr)o is the main component, and Al2O3 is 0.001 to 0.01 mol% in the total amount.
A resistor having a composition containing the same, as well as a resistor which also has ZnO as a main component and has a proportion of Al2O3 in the total amount of 0.0
In a resistor having a composition containing 0.01 to 0.01 mol% and 2 mol% or less of SiO2, the resistance value is extremely low at 0.01 to 0.8 Ωd, and the rate of change with temperature is 50% or less. It is small, and the rate of change over time is also 50.
% or less, and has excellent characteristics. A resistor with excellent characteristics as described above is a rod-shaped heater. A surface heater formed by printing on an alumina substrate, etc. It is useful when used as a plate heater formed into a sheet shape or as an electrode material. Note that instead of adding Al2O3 to ZnO,
Even if 1(NO3)3 is dissolved in water and added, it will not work during firing.
Since it becomes Al2O3, a similar effect can be obtained. As described above, according to the present invention, the resistance value is very low and -50
It is possible to easily obtain a resistor with a small resistance change in the temperature range of ~1000°C and a small change over time.
図は本発明によるセラミック抵抗体の温度特性を示す図
である。The figure is a diagram showing the temperature characteristics of the ceramic resistor according to the present invention.
Claims (1)
２Ｏ＿３が０．００１〜０．０１モル％含まれたことを
特徴とするセラミック抵抗体。 ２ ＺｎＯを主成分とし、全量中に占める割合でＡｌ＿
２Ｏ＿３が０．００１〜０．０１モル％またＳｉＯ＿２
が２％以下それぞれ含まれたことを特徴とするセラミッ
ク抵抗体。[Claims] 1 ZnO is the main component, and Al_
A ceramic resistor characterized by containing 0.001 to 0.01 mol% of 2O_3. 2 The main component is ZnO, and the proportion of Al_
2O_3 is 0.001 to 0.01 mol% and SiO_2
A ceramic resistor characterized by containing 2% or less of each.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55109381A JPS6055966B2 (en) | 1980-08-08 | 1980-08-08 | ceramic resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55109381A JPS6055966B2 (en) | 1980-08-08 | 1980-08-08 | ceramic resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5734308A JPS5734308A (en) | 1982-02-24 |
| JPS6055966B2 true JPS6055966B2 (en) | 1985-12-07 |
Family
ID=14508792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55109381A Expired JPS6055966B2 (en) | 1980-08-08 | 1980-08-08 | ceramic resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6055966B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030100A (en) * | 1983-07-29 | 1985-02-15 | 株式会社日立製作所 | Dummy load for heating in high frequency |
-
1980
- 1980-08-08 JP JP55109381A patent/JPS6055966B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5734308A (en) | 1982-02-24 |
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