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JPS6056800B2 - Method for removing protruding parts of base copper plating in partial silver plating and method for finishing surface of silver plating - Google Patents
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JPS6056800B2 - Method for removing protruding parts of base copper plating in partial silver plating and method for finishing surface of silver plating - Google Patents

Method for removing protruding parts of base copper plating in partial silver plating and method for finishing surface of silver plating

Info

Publication number
JPS6056800B2
JPS6056800B2 JP13945982A JP13945982A JPS6056800B2 JP S6056800 B2 JPS6056800 B2 JP S6056800B2 JP 13945982 A JP13945982 A JP 13945982A JP 13945982 A JP13945982 A JP 13945982A JP S6056800 B2 JPS6056800 B2 JP S6056800B2
Authority
JP
Japan
Prior art keywords
plating
silver
silver plating
potential
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13945982A
Other languages
Japanese (ja)
Other versions
JPS5931900A (en
Inventor
邦行 堀
信一 若林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP13945982A priority Critical patent/JPS6056800B2/en
Publication of JPS5931900A publication Critical patent/JPS5931900A/en
Publication of JPS6056800B2 publication Critical patent/JPS6056800B2/en
Expired legal-status Critical Current

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  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】 本発明は、半導体装置用リードフレームにその素子搭載
部あるいはワイヤボンディング面等に対応して部分銀メ
ッキを施すなど素材の所要の部分に部分銀メッキを得る
場合に、その下地としての銅メッキのはみ出し部分を選
択的に効率よく剥離しうる部分銀メッキにおける下地銅
メッキのはみ出し部分剥離方法および下地銅メッキのは
み出し部分を剥離するとともに銀メッキ表面を所望の外
観に剥離する部分銀メッキにおける銀メッキ表面仕上け
方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for obtaining partial silver plating on a required part of a material, such as applying partial silver plating to a lead frame for a semiconductor device corresponding to its element mounting area or wire bonding surface, etc. A method for removing the protruding part of the base copper plating in selective silver plating that can selectively and efficiently remove the protruding part of the copper plating as the base, and a method for peeling off the protruding part of the base copper plating and peeling off the silver plated surface to the desired appearance. This invention relates to a silver plating surface finishing method in selective silver plating.

半導体装置用リードフレームに部分銀メッキを得るには
、素材が鉄−ニッケル合金、鉄−ニッケル−コバルト合
金等の場合には密着性を得る目的で銅の下地メッキが必
要とされ、この場合に下地銅メッキは素材の全面または
所望の銀メッキエリアよりやや大きめに部分メッキされ
る。
In order to obtain partial silver plating on lead frames for semiconductor devices, if the material is iron-nickel alloy, iron-nickel-cobalt alloy, etc., a copper base plating is required to obtain adhesion. The base copper plating is applied to the entire surface of the material or to a portion slightly larger than the desired silver plating area.

そしてこの下地銅メッキ上に必要な部分銀メッキを施し
て後、はみ出した下地銅メッキは後記するように種々の
障害を及ほすため剥離するようにしている。その際に銀
メッキには何ら影響を与えずに下地銅メッキのはみ出し
部分だけ選択的に効率よく剥離する方法が要望されてい
る。銅メッキや銀メッキの剥離方法としては化学処理お
よび電解処理が知られている。
After the necessary partial silver plating is applied to the base copper plating, the protruding base copper plating is peeled off because it causes various problems as described later. At this time, there is a need for a method that selectively and efficiently removes only the protruding portions of the base copper plating without affecting the silver plating in any way. Chemical treatment and electrolytic treatment are known as methods for removing copper plating and silver plating.

前者としてはエンストリツプ108(ジヤパンメタルフ
イニツシング)、エンストリツプS(EEJA)等種々
の剥離液が用いられ、リードフレームを浸漬することに
より剥離が行われる。
For the former, various stripping solutions such as Enstrip 108 (Japan Metal Finishing Co., Ltd.) and Enstrip S (EEJA) are used, and stripping is performed by immersing the lead frame.

この場合には帯条のリードフレームを連続処理”するに
はリードフレームを連続して剥離液中に送り込むもので
あるため浸漬時間は一定に規制される。しカルながら部
分メッキではマスク面積の不揃いのため、あるいはメッ
キ効率の変動等によつて下地銅メッキの面積やメッキ厚
を一定にすることは困難である。
In this case, in order to continuously process the strip lead frame, the immersion time is regulated to be constant because the lead frame is continuously fed into the stripping solution. However, with partial plating, the mask area may be uneven. Therefore, it is difficult to make the area and plating thickness of the base copper plating constant due to variations in plating efficiency or the like.

このため上述の連続処理においては不要銅メッキの剥離
残りが起き、樹脂モールドの障害やリード部の再メッキ
時の障害となつたり、また逆に過剰剥離により部分銀メ
ッキおよび部分銀メッキの下の銅メッキまでが剥離され
、ワイヤボンディング性に悪影響を及ぼしたり銀メッキ
膜の脱落による電気的障害が引き起されたりする難点が
ある。また剥離液によりメッキ面が侵され剥離ムラの原
因ともなつている。後者の電解処理では剥離液中で定電
流により剥離が行われる。
For this reason, in the above-mentioned continuous process, undesired copper plating remains unremoved, which can cause problems with the resin mold or when re-plating the leads, and conversely, excessive peeling can cause partial silver plating and parts under the partial silver plating to be removed. There are disadvantages in that even the copper plating is peeled off, adversely affecting wire bonding properties and causing electrical failures due to the falling off of the silver plating film. Furthermore, the plated surface is attacked by the stripping solution, causing uneven stripping. In the latter electrolytic treatment, stripping is performed using a constant current in a stripping solution.

しかしながらこの方法では銅メッキの剥離とともに銀メ
ッキの剥離も行われてしまう。このため銀メッキ面は無
光沢になつたり、剥離ムラになつたりして所望のメッキ
外観に仕上げることが極めて困難となる。本発明は上述
の難点を解消すべく提案されたもので、参照電極を用い
て電位を規制することによつて、銀メッキには何ら影響
を与えずに下地銅メッキのはみ出し部分だけを選択的に
剥離することのできる剥離方法および参照電極を用いて
電位を正確に規制することによつて、下地銅メッキのは
み出し部分を剥離するとともに銀メッキ表面を所望の外
観に仕上げることのできる銀メッキ表面仕上け方法を提
供することを目的とするものである。
However, in this method, the silver plating is also peeled off as well as the copper plating. As a result, the silver-plated surface becomes matte or peels unevenly, making it extremely difficult to achieve the desired plating appearance. The present invention was proposed to solve the above-mentioned problems, and by regulating the potential using a reference electrode, only the protruding portion of the base copper plating can be selectively removed without affecting the silver plating. By accurately regulating the potential using a removal method and a reference electrode, it is possible to remove the protruding portion of the base copper plating and finish the silver plating surface to the desired appearance. The purpose is to provide a finishing method.

本発明は、銀および銅の溶出電位に差のあることを利用
し、銅メッキだけを選択的に剥離するものである。
The present invention utilizes the difference in elution potential between silver and copper to selectively remove only the copper plating.

多くの金属は適当な電解液中でその溶出電位より正電位
において溶出する。
Many metals elute at potentials more positive than their elution potential in a suitable electrolyte.

また、この溶出電位は同一溶液中において金属の種類に
よつて異なる。シアン溶液中では銀の溶出電位は銅の溶
出電位より正電位にあり、この銅の溶出電位と銀の溶出
電位の間の電位では銅だけが溶出し、銀は溶出しないこ
とが判明した。これによつて、銀および銅の溶出電位の
中間に電位を設定して剥離を行うことにより、所望領域
外の銅メッキだけを選択的に除去できるものである。
Moreover, this elution potential differs depending on the type of metal in the same solution. It was found that in a cyanide solution, the elution potential of silver is more positive than the elution potential of copper, and at a potential between the elution potential of copper and the elution potential of silver, only copper is eluted and no silver is eluted. With this, by setting a potential between the elution potentials of silver and copper and performing stripping, only the copper plating outside the desired area can be selectively removed.

第1図は、銀および銅の電流電圧曲線の測定結果である
FIG. 1 shows the measurement results of the current-voltage curves of silver and copper.

KCN5Oy′eの剥離液で、陰極に白金電極(1.5
cTi)、陽極に銅および銀(ともに1c1t)、参照
電極に飽和カロメル電極を用いた。液温は25℃とし、
銀、銅とも、自然電位より240sec1Vの速さで正
電位方向に掃引し、+1.5■からは逆に負電位方向に
自然電位まて掃引した。銀電極の場合、溶出電位は約−
0.7Vで、これより正電位では銀の剥離が行われる。
銅電極では、約一1.2Vから剥離が始まつている。そ
こでこの−0.7〜−1.2■の間に電位を設定すれば
、銅だけの剥離しか行われないとの知見を得た。このこ
とは以下の実例によつて確認された、2G×2C7nの
4坩に前処理を施し、厚さ約2μmlこ全面銅メッキを
し、さらにその上に厚さ約10μm1面積約0.4c1
fの部分銀メッキを施したサンプルを作つた。
Using KCN5Oy'e stripping solution, attach a platinum electrode (1.5
cTi), copper and silver (both 1c1t) were used as the anode, and a saturated calomel electrode was used as the reference electrode. The liquid temperature is 25℃,
For both silver and copper, the potential was swept in the positive potential direction at a rate of 240 sec 1 V from the natural potential, and from +1.5 ■, the natural potential was swept in the negative potential direction. For silver electrodes, the elution potential is approximately -
The voltage is 0.7 V, and at a more positive potential, silver is removed.
The copper electrode starts to peel off at about -1.2V. Therefore, it has been found that if the potential is set between -0.7 and -1.2 .mu., only the copper can be peeled off. This was confirmed by the following example. Four crucibles of 2G x 2C7n were pretreated, the entire surface was plated with copper to a thickness of about 2μml, and then the entire surface was plated with copper to a thickness of about 10μm and an area of about 0.4c1.
A sample with f partial silver plating was made.

このサンプルを陽極とし、上述の装置にセットし、KC
N5OyIlの剥離液中で電位を1.0■に設定し剥離
を行つた。その結果、銀メッキ面には何の変化を与えず
に銅メッキだけがきれいに剥離された。第2図は、剥離
の際の電流と時間の関係を示したものであるが、約4分
で電流値は0となり電流は流れなくなる。これは、銅の
剥離が完全に完了したことを示し、そこで剥離は終了し
、銀は何ら影響を受けず反応しないことを示している。
このように3極式の電位規制により、銀には影響を与え
ずに銅だけ剥離することが可能である。またKCN濃度
と電流値とほぼ比例するため、短時間での剥離が必要な
ときはKCN濃度を濃くすることにより達成される。こ
の実例では、剥離液にKCNを単独で用いたが、各種添
加剤を加えてもよく、あるいはKCN以外の他の同様の
性質を示す剥離液を用いてもよい。
This sample was used as an anode, set in the above-mentioned device, and KC
Stripping was performed in a stripping solution of N5OyIl with the potential set at 1.0 . As a result, only the copper plating was removed cleanly without any change in the silver plating surface. FIG. 2 shows the relationship between current and time during peeling, and the current value becomes 0 in about 4 minutes and no current flows. This indicates that the stripping of the copper is completely completed, indicating that the stripping is complete and the silver is unaffected and does not react.
In this way, the three-electrode potential regulation makes it possible to strip only the copper without affecting the silver. Furthermore, since the KCN concentration is approximately proportional to the current value, if stripping is required in a short time, it can be achieved by increasing the KCN concentration. In this example, KCN was used alone as the stripping solution, but various additives may be added, or stripping solutions other than KCN that exhibit similar properties may be used.

なお実験によると、KCN単独の場合が一番ノ良好な剥
離となつた。上述のように電位規制により銅メッキだけ
を選択的に剥離することが可能であるばかりでなく、参
照電極を用いて剥離電位を精密にコントロールできるこ
とにより、設定電位を銀の溶出電位より7も正電位にし
て銀メッキ、銅メッキともに剥離することもでき、銀メ
ッキの剥離をわずかにするか多くするかも自由にかつ容
易に設定することができる。
According to experiments, the use of KCN alone resulted in the best peeling. As mentioned above, it is not only possible to selectively strip only the copper plating by regulating the potential, but also by precisely controlling the stripping potential using a reference electrode, it is possible to set the set potential to be 7 points higher than the silver elution potential. Both silver plating and copper plating can be removed by applying a potential, and it is possible to freely and easily set whether the silver plating should be removed a little or more.

さらに剥離面の外観は電位に依存する。Furthermore, the appearance of the peeled surface depends on the electrical potential.

例え1ば、銀では自然電位から0Vの間では無光沢、0
■から1.5Vでは光沢に、さらに1.5V以上では無
光沢になる。このように電位規制することで銀メッキ面
を容易に無光沢にも光沢にも仕上げることができる。以
下に実施例を示す。
For example, silver has no luster between the natural potential and 0V, and 0V.
From (2) to 1.5V, it becomes glossy, and when it is 1.5V or more, it becomes matte. By regulating the potential in this manner, the silver-plated surface can be easily finished to either matte or glossy finish. Examples are shown below.

実施例1 電解剥離液組成KCN5OyIf 電解槽50cm×5cm×5α 陽極SUS43O 温度25゜C 設定電位 −1.0VVSS.C.E. 以上の条件で0.3μmの全面銅メッキを行い、さらに
規定ポツデイングエリア内に3.0pmの部分銀メッキ
を行つた40ピンのリードフレームを5r!1.Imi
nの速度て移動させ連続的に電解剥離操作を行つた。
Example 1 Electrolytic stripper composition KCN5OyIf Electrolytic tank 50cm x 5cm x 5α Anode SUS43O Temperature 25°C Set potential -1.0VVSS. C. E. A 40-pin lead frame with 0.3 μm copper plating on the entire surface under the above conditions and 3.0 pm partial silver plating within the specified potting area is 5R! 1. Imi
The electrolytic stripping operation was performed continuously by moving at a speed of n.

この楊合銀の外観は全く変化せず不要部分の銅のみが剥
離された。実施例2 電解剥離液NaCN5OyIe..NaOH5Oy′e
設定電位 −0.6VVSS.C.E.他は実施例1と
同じ この剥離操作により銅が完全に除去されたばかりでなく
、光沢の銀メッキ面も一様に剥離が進み適度な半光沢面
となつた。
The appearance of this Yang silver did not change at all, and only the unnecessary parts of the copper were peeled off. Example 2 Electrolytic stripper NaCN5OyIe. .. NaOH5Oy'e
Setting potential -0.6VVSS. C. E. By this peeling operation, which was otherwise the same as in Example 1, not only was the copper completely removed, but the bright silver-plated surface was also uniformly peeled off and became a moderately glossy surface.

なお以上はリードフレームを例として説明したがこれら
に限られないことは言うまでもない。
Although the above description has been made using lead frames as an example, it goes without saying that the present invention is not limited to these.

以上のように本発明方法によれば、銀メッキ領域からは
み出している下地銅メッキを選択的に、かつ効率よく剥
離することができるとともに、電位を規制することによ
つて銀メッキ面の光沢も任意に制御しうるという著効を
奏する。以上本発明につき好適な実施例を挙けて種々説
明したが、本発明はこの実施例に限定されるものではな
く、発明の逸脱しない範囲内て多くの改変を施しうるの
はもちろんのことてある。
As described above, according to the method of the present invention, the underlying copper plating protruding from the silver-plated area can be selectively and efficiently removed, and the gloss of the silver-plated surface can also be improved by regulating the potential. It has the remarkable effect of being able to be controlled arbitrarily. Although the present invention has been variously explained above with reference to preferred embodiments, the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the scope of the invention. be.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は銀および銅のサイクリツクボルタモグラムを示
す。
FIG. 1 shows the cyclic voltammograms of silver and copper.

Claims (1)

【特許請求の範囲】 1 銅メッキを下地として部分銀メッキを施した場合の
前記下地銅メッキのはみ出し部分を剥離すべく、参照電
極を用いて電位を正確に規制して、銅メッキが溶出し銀
メッキが溶出しない電位範囲で陽極電解することを特徴
とする部分銀メッキにおける下地銅メッキのはみ出し部
分剥離方法。 2 銅メッキを下地として部分銀メッキを施した場合の
前記下地銅メッキのはみ出し部分を剥離するとともに銅
メッキ表面を所望の外観に剥離すべく、参照電極を用い
て電位を正確に規制して、銅メッキが溶出し銀メッキが
適度に溶出する電位範囲で陽極電解することを特徴とす
る部分銀メッキにおける銀メッキ表面位上げ方法。
[Claims] 1. When partial silver plating is applied to copper plating as a base, in order to peel off the protruding portion of the base copper plating, a reference electrode is used to accurately regulate the potential and the copper plating is eluted. A method for removing protruding portions of base copper plating in partial silver plating, characterized by carrying out anodic electrolysis in a potential range in which silver plating does not elute. 2. In the case where partial silver plating is performed using copper plating as a base, the potential is accurately regulated using a reference electrode in order to peel off the protruding portion of the base copper plating and to peel off the copper plated surface to a desired appearance. A method for raising the surface level of silver plating in partial silver plating, characterized by carrying out anodic electrolysis in a potential range in which copper plating is eluted and silver plating is moderately eluted.
JP13945982A 1982-08-11 1982-08-11 Method for removing protruding parts of base copper plating in partial silver plating and method for finishing surface of silver plating Expired JPS6056800B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13945982A JPS6056800B2 (en) 1982-08-11 1982-08-11 Method for removing protruding parts of base copper plating in partial silver plating and method for finishing surface of silver plating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13945982A JPS6056800B2 (en) 1982-08-11 1982-08-11 Method for removing protruding parts of base copper plating in partial silver plating and method for finishing surface of silver plating

Publications (2)

Publication Number Publication Date
JPS5931900A JPS5931900A (en) 1984-02-21
JPS6056800B2 true JPS6056800B2 (en) 1985-12-11

Family

ID=15245707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13945982A Expired JPS6056800B2 (en) 1982-08-11 1982-08-11 Method for removing protruding parts of base copper plating in partial silver plating and method for finishing surface of silver plating

Country Status (1)

Country Link
JP (1) JPS6056800B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968397A (en) * 1989-11-27 1990-11-06 Asher Reginald K Non-cyanide electrode cleaning process
JP4264338B2 (en) * 2003-12-11 2009-05-13 新光電気工業株式会社 Copper electrolytic stripping solution and electrolytic stripping method
JP4268515B2 (en) 2003-12-26 2009-05-27 新光電気工業株式会社 Electrolytic peeling method

Also Published As

Publication number Publication date
JPS5931900A (en) 1984-02-21

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