JPS608263B2 - Manufacturing method of coating liquid for silica film formation - Google Patents
Manufacturing method of coating liquid for silica film formationInfo
- Publication number
- JPS608263B2 JPS608263B2 JP13922083A JP13922083A JPS608263B2 JP S608263 B2 JPS608263 B2 JP S608263B2 JP 13922083 A JP13922083 A JP 13922083A JP 13922083 A JP13922083 A JP 13922083A JP S608263 B2 JPS608263 B2 JP S608263B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- film
- alcohol
- acid
- alkoxysilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 36
- 238000000576 coating method Methods 0.000 title claims description 31
- 239000011248 coating agent Substances 0.000 title claims description 27
- 239000000377 silicon dioxide Substances 0.000 title claims description 17
- 239000007788 liquid Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 238000006243 chemical reaction Methods 0.000 claims description 40
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 26
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 16
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- 239000000178 monomer Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 description 32
- 235000019441 ethanol Nutrition 0.000 description 23
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Natural products CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 11
- -1 acetic acid halide Chemical class 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 235000011007 phosphoric acid Nutrition 0.000 description 6
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 6
- 229960000583 acetic acid Drugs 0.000 description 5
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 239000012362 glacial acetic acid Substances 0.000 description 3
- 238000007496 glass forming Methods 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 239000011976 maleic acid Substances 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000001733 carboxylic acid esters Chemical class 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 229920000159 gelatin Polymers 0.000 description 2
- 239000008273 gelatin Substances 0.000 description 2
- 235000019322 gelatine Nutrition 0.000 description 2
- 235000011852 gelatine desserts Nutrition 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 2
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 229910011255 B2O3 Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229920001800 Shellac Polymers 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- YDHWWBZFRZWVHO-UHFFFAOYSA-N [hydroxy(phosphonooxy)phosphoryl] phosphono hydrogen phosphate Chemical compound OP(O)(=O)OP(O)(=O)OP(O)(=O)OP(O)(O)=O YDHWWBZFRZWVHO-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- WETWJCDKMRHUPV-UHFFFAOYSA-N acetyl chloride Chemical compound CC(Cl)=O WETWJCDKMRHUPV-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229940093920 gynecological arsenic compound Drugs 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 150000003112 potassium compounds Chemical class 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- ZLGIYFNHBLSMPS-ATJNOEHPSA-N shellac Chemical compound OCCCCCC(O)C(O)CCCCCCCC(O)=O.C1C23[C@H](C(O)=O)CCC2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O ZLGIYFNHBLSMPS-ATJNOEHPSA-N 0.000 description 1
- 239000004208 shellac Substances 0.000 description 1
- 229940113147 shellac Drugs 0.000 description 1
- 235000013874 shellac Nutrition 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-N triphosphoric acid Chemical compound OP(O)(=O)OP(O)(=O)OP(O)(O)=O UNXRWKVEANCORM-UHFFFAOYSA-N 0.000 description 1
- 229940048102 triphosphoric acid Drugs 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
Landscapes
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
- Silicon Compounds (AREA)
Description
【発明の詳細な説明】
本発明は、新規なシリカ系被膜形成用塗布液の製法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a novel coating liquid for forming a silica-based film.
基体上にシリカ系被膜を形成する方法としては、気相成
長法と塗布法が知られており、前者が一般的に行われて
いるが、この方法は特殊な装置を必要とする、処理すべ
き基体の大きさに制限がある、大量生産が困難である、
有機物と無機物の混合被膜の同時形成がむずかしいなど
の欠点を有するため、近年、より簡便な方法として後者
が注目されるようになってきた。The vapor phase growth method and the coating method are known as methods for forming a silica-based film on a substrate, and the former is generally used, but this method requires special equipment and requires a long processing time. There are restrictions on the size of the substrate to be used, and mass production is difficult.
Since it has drawbacks such as the difficulty of simultaneously forming a mixed film of organic and inorganic substances, the latter method has recently attracted attention as a simpler method.
しかし、塗布法は、例えば粒子状のシーJ力及びガラス
を高分子化合物と共に溶媒に分散させて基体上に塗布す
る場合など、液中に沈澱を生じやすい、被膜の膜厚が不
均一になりやすい、薄い被膜においてはピンホールを生
じやすいなどの欠点があり、工業的に実施する方法とし
ては、まだ満足すべきものとはいえない。However, coating methods tend to cause precipitation in the liquid and result in non-uniform film thickness, such as when particulate CJ and glass are dispersed in a solvent together with a polymer compound and applied onto a substrate. This method has disadvantages such as easy formation of pinholes in thin and thin films, and is not yet satisfactory as a method for industrial implementation.
このような欠点を改善するために、粒子状シリカの代り
にカルボン酸とハロゲン化シランとアルコールとの反応
生成物を用いる方法が提案されている(特公昭52−1
6488号公報、袴公昭52一20825号公報)。こ
の方法で′は、被膜形成成分が溶液状となっているため
沈殿を生じたり、被膜が不均一になることは避けられる
が、ハロゲン化シランを用いる必要上、被膜用塗布液中
にハロゲン化水素、酢酸ハラィドなどのハロゲン化物が
副生するのが免れない。このハロゲン化物は、それを完
全に除去すれば所望の反応が進行しないし、また多量に
存在すれば溶液の安全性が低下し、ゲル化をもたらす原
因となるため、反応中はその濃度を所定範囲内に制御し
なければならないという不便がある上に、最終的に得ら
れる反応液中にこれが存在すると塗布の際又は加熱の間
に基体を腐食するという問題をもたらす。したがって、
この種の塗布液の製造については、形成反応が円滑に進
行し、しかもハロゲン化物を含まない状態の塗布液を生
成する方法の出現が要望されていた。In order to improve these drawbacks, a method has been proposed in which a reaction product of carboxylic acid, halogenated silane, and alcohol is used instead of particulate silica (Japanese Patent Publication No. 52-1).
No. 6488, Hakama Kosho No. 52-20825). In this method, since the film-forming components are in solution, precipitation and non-uniformity of the film can be avoided, but since it is necessary to use halogenated silane, halogenated It is inevitable that hydrogen and halides such as acetic acid halide will be produced as by-products. If this halide is completely removed, the desired reaction will not proceed, and if it exists in a large amount, the safety of the solution will decrease and it will cause gelation, so the concentration should be kept at a specified level during the reaction. In addition to the inconvenience of having to control it within a range, its presence in the final reaction solution poses the problem of corrosion of the substrate during coating or heating. therefore,
Regarding the production of this type of coating liquid, there has been a demand for a method for producing a coating liquid in which the formation reaction proceeds smoothly and which does not contain halides.
本発明者らは、このような要望にこたえるべく鋭意研究
を重ねた結果、前記のハロゲン化シランの代りにァルコ
キシシランを用い、反応促進剤の存在下で反応させるこ
とによりその目的を達成しうろことを見出し、この知見
に基づいて本発明をなすに至った。As a result of extensive research in order to meet these demands, the present inventors have discovered that the purpose can be achieved by using an alkoxysilane instead of the halogenated silane and reacting it in the presence of a reaction accelerator. The present invention was made based on this finding.
すなわち、本発明は、アルコキシシラン1モルと有機カ
ルポン酸2〜5モルとアルコール2〜10モルの混合物
に、リン酸を加え、かつ水を加えることなく、反応液中
のアルコキシシラン及び有機カルボン酸の含有量が当初
の2の重量%以下になるまで反応させ、ヒドロキシシラ
ンを生成させることを特徴とするヒド。That is, in the present invention, phosphoric acid is added to a mixture of 1 mole of alkoxysilane, 2 to 5 moles of organic carboxylic acid, and 2 to 10 moles of alcohol, and the alkoxysilane and organic carboxylic acid in the reaction solution are removed without adding water. Hydroxysilane is produced by reacting until the content of hydroxysilane becomes 2% by weight or less of the original amount.
キシシラン単量体を主成分としたシリカ系被膜形成用塗
布液の製法を提供するものである。本発明に使用するア
ルコキシシランとしては「例えばテトラメトキシシラン
「モノメチルトリェトキシシラン、テトラヱトキシシラ
ン、モノエチルトリエトキシシラン、テトラプロポキシ
シラン、テトラプトキシシラン及びこれらの混合物をあ
げることができる。The present invention provides a method for producing a coating liquid for forming a silica film containing xysilane monomer as a main component. Examples of alkoxysilanes used in the present invention include tetramethoxysilane, monomethyltriethoxysilane, tetraethoxysilane, monoethyltriethoxysilane, tetrapropoxysilane, tetraptoxysilane, and mixtures thereof.
また、有機カルボン酸としては、氷酢酸、無水酢酸「プ
ロピオン酸「無水プロピオン酸のような低級モノカルボ
ン酸又はその無水物、シュウ酸、フマル酸、マレィン酸
、コハク酸のような低級ジカルボン酸又はその無水物を
あげることができる。これらは単独で用いてもよいし、
また2種以上混合して用いてもよい。次にアルコールと
しては、例えばメチルアルコール、エチルアルコール、
プロピルアルコール、ブチルアルコール、エチレングリ
コール、2−メトキシェタノール及びこれらの混合物を
あげることができる。本発明においては、上記したアル
コキシシランと有機カルボン酸とアルコールとを混合し
、これに反応促進剤としてリン酸を添加して反応させる
ことが必要である。Examples of organic carboxylic acids include glacial acetic acid, acetic anhydride, propionic acid, lower monocarboxylic acids or their anhydrides such as propionic anhydride, lower dicarboxylic acids such as oxalic acid, fumaric acid, maleic acid, succinic acid, The anhydride can be mentioned.These can be used alone,
Moreover, two or more types may be mixed and used. Next, examples of alcohol include methyl alcohol, ethyl alcohol,
Mention may be made of propyl alcohol, butyl alcohol, ethylene glycol, 2-methoxychetanol and mixtures thereof. In the present invention, it is necessary to mix the above-described alkoxysilane, organic carboxylic acid, and alcohol, and add phosphoric acid as a reaction accelerator to the mixture to cause the mixture to react.
ここでいうリン酸とは、五酸化リンが水和してできる酸
の総称であって、オィトリン酸のほかメタリン酸、ピロ
リン酸、三リン酸、四リン酸、ポリリン酸などが包含さ
れる。これらのリン酸は、あらかじめ調製されたものを
用し、てもよいし、また五酸化リンの形で添加し、反応
混合物中で形成させてもよい。本発明方法に従って塗布
液を製造するには、所定のアルコキシシランと所定の有
機カルボン酸と所定のアルコールとを混合し、この中へ
所定の反応促進剤を添加する。Phosphoric acid as used herein is a general term for acids produced by hydration of phosphorus pentoxide, and includes not only olithophosphoric acid but also metaphosphoric acid, pyrophosphoric acid, triphosphoric acid, tetraphosphoric acid, polyphosphoric acid, and the like. These phosphoric acids may be prepared in advance or may be added in the form of phosphorus pentoxide and formed in the reaction mixture. To produce a coating liquid according to the method of the present invention, a predetermined alkoxysilane, a predetermined organic carboxylic acid, and a predetermined alcohol are mixed, and a predetermined reaction accelerator is added thereto.
これにより、発熱反応が起り、次第に有機カルボン酸ェ
ステルとヒドロキシシランが生成する。そして、反応開
始2〜5時間でアルコキシシランが消失し、有機カルボ
ン酸の量も次第に減少して、室温で2〜5日間経過後に
は、その量が当初の2の重量%以下になる。この際、反
応温度を50〜7000に高めると、この反応時間は短
縮される。このようにして、ヒドロキシシラン単量体、
有機カルボン酸ヱステル及びアルコールを主成分として
含有する反応生成物が得られる。This causes an exothermic reaction and gradually produces organic carboxylic acid ester and hydroxysilane. Then, 2 to 5 hours after the start of the reaction, the alkoxysilane disappears, and the amount of organic carboxylic acid gradually decreases, and after 2 to 5 days at room temperature, the amount becomes less than 2% by weight of the initial amount. At this time, if the reaction temperature is raised to 50 to 7000, this reaction time is shortened. In this way, hydroxysilane monomer,
A reaction product containing organic carboxylic acid ester and alcohol as main components is obtained.
この際に用いられる各成分の使用割合としては、アルコ
キシシラン1モル当り、有機カルボン酸2〜5モル、ア
ルコール2〜10モルの範囲が選ばれる。The proportions of each component used in this case are selected in the range of 2 to 5 moles of organic carboxylic acid and 2 to 10 moles of alcohol per 1 mole of alkoxysilane.
好適な割合は、アルコキシシラン1モル当り、有機カル
ボン酸4モル(カルボキシル基単位)「アルコール4〜
8モルである。また「反応促進剤の添加量としては、ア
ルコキシシランの重量に基づき0.001〜1.の重量
%の範囲が好ましい。ヒドロキシシランは、単量体状で
一般的に不安定といわれているが、本発明方法により生
成するヒドロキシシランは、反応生成物中に高濃度とな
ることがないので、非常に安定な状態で存在することが
できる。また脱水縮合して重合体を形成することがない
ので均一なシリカ系被膜を形成するのに好都合である。
これらの成分間の反応経過は、反応液のガスクロマトグ
ラフィ一、赤外線吸収スペクトル分析などによって追跡
することができる。A suitable ratio is 4 moles of organic carboxylic acid (carboxyl group unit) and 4 to 4 moles of alcohol per mole of alkoxysilane.
It is 8 moles. Furthermore, ``The amount of reaction accelerator added is preferably in the range of 0.001 to 1% by weight based on the weight of the alkoxysilane.Hydroxysilane is a monomer and is generally said to be unstable. The hydroxysilane produced by the method of the present invention does not have a high concentration in the reaction product, so it can exist in a very stable state.It also does not undergo dehydration condensation to form a polymer. Therefore, it is convenient for forming a uniform silica-based film.
The progress of the reaction between these components can be tracked by gas chromatography, infrared absorption spectrum analysis, etc. of the reaction solution.
そして、反応液中の低級カルボン酸含有量が、当初の2
の重量%以下になったとき、室温大気中でなめらかでは
じきのない、厚さが一定な被膜を形成しうる安定な塗布
液が得られる。アルコキシシランは、強酸により加水分
解すると、安定性の低い、ゲル化しやすい反応液を生じ
「 また水やカルボン酸では加水分解いこくいという性
質を有している。Then, the lower carboxylic acid content in the reaction solution was reduced to 2
% by weight or less, a stable coating solution can be obtained that can form a smooth, non-repellent film with a constant thickness at room temperature and in the atmosphere. When hydrolyzed by strong acids, alkoxysilanes produce a reaction solution that has low stability and is prone to gelation.
さらにまた水と無機酸の存在下で加水分解したときには
、反応液の粘度が上昇、すなわちシラノールの水酸基同
士脱水縮合反応して重合体を形成する額向が強い。さら
に、ァルコキシシランと低級カルボン酸とアルコールの
混合物に、反応促進剤を加えずに放置した場合、熱を加
えてもなかなか反応は進行せず、反応液中にはアルコキ
シシランと有機カルボン酸が多量に残存する。そして、
このようにアルコキシシラン及び有機カルボン酸が多量
に残っている反応液を、塗布液として用いると、これを
塗布する際、基板表面ではじきを生じ、均一な被膜を形
成することができない。したがって、本発明においては
、アルコキシシランと有機カルボン酸とアルコールとの
混合物を、所定の反応促進剤の存在下で反応させること
が必要である。この反応促進剤を添加するには、このも
のが液状であれば、アルコキシシランと有機カルボン酸
とアルコールとの混合物中にそのまま加えるのが、作業
性の点で好ましい。しかし、特に反応促進剤が固体状で
溶解いこくい場合などでは、これをあらかじめ、アルコ
ール又は有機カルボン酸に溶解しておき、これをアルコ
キシシランと混合するのが有利である。前記のようにし
て得られた反応混合物は、次に必要に応じ有機溶剤を加
えて濃度を調整し、0.2〜1.0舷仇のふるい目のフ
ィルターを通してろ過したのち、塗布液として使用され
る。この際、濃度調整に用いる有機溶剤の例としては、
メチルアルコール、エチルアルコールのようなアルコー
ル類、酢酸メチル、酢酸エチル、酢酸ブチルのようなェ
ステル類、アセトン、メチルケエチルトン、アセチルア
セトンのようなケトン類、多価アルコール類ないしその
エーテル類及びこれらの混合物などをあげることができ
るが、アルコール類又はアルコール類を主体とした混合
溶剤が好ましい。Furthermore, when hydrolyzed in the presence of water and an inorganic acid, the viscosity of the reaction solution increases, that is, the hydroxyl groups of the silanol are more likely to undergo a dehydration condensation reaction with each other to form a polymer. Furthermore, if a mixture of alkoxysilane, lower carboxylic acid, and alcohol is left without a reaction accelerator, the reaction will not proceed easily even when heat is applied, and a large amount of alkoxysilane and organic carboxylic acid will remain in the reaction solution. remain. and,
If a reaction solution in which a large amount of alkoxysilane and organic carboxylic acid remain as described above is used as a coating solution, repulsion occurs on the substrate surface when it is applied, making it impossible to form a uniform film. Therefore, in the present invention, it is necessary to react a mixture of an alkoxysilane, an organic carboxylic acid, and an alcohol in the presence of a predetermined reaction promoter. In order to add this reaction accelerator, if it is liquid, it is preferable to add it as it is to the mixture of alkoxysilane, organic carboxylic acid, and alcohol from the viewpoint of workability. However, especially when the reaction promoter is solid and difficult to dissolve, it is advantageous to dissolve it in alcohol or organic carboxylic acid in advance and mix this with the alkoxysilane. The reaction mixture obtained as described above is then added with an organic solvent as necessary to adjust the concentration, filtered through a filter with a sieve size of 0.2 to 1.0 mm, and then used as a coating solution. be done. At this time, examples of organic solvents used for concentration adjustment are:
Alcohols such as methyl alcohol and ethyl alcohol, esters such as methyl acetate, ethyl acetate, and butyl acetate, ketones such as acetone, methylkethyltone, and acetylacetone, polyhydric alcohols and their ethers, and their ethers. Although mixtures and the like can be mentioned, alcohols or mixed solvents mainly composed of alcohols are preferable.
本発明方法により得られた塗布液は、使用に際し所望に
応じガラス質形成剤又は有機高分子膜形成剤を加えるこ
とができる。A glass-forming agent or an organic polymer film-forming agent can be added to the coating liquid obtained by the method of the present invention as desired upon use.
このガラス質形成剤としては、アルコールとェステルを
主成分とする有機溶剤に可溶な化合物で、熱処理により
ガラス化されるもの、例えば(RO)3P、(PO)2
POH、(RO)3P0、RP(OR′)2、R2P(
OH)、R2P○(OH)、RP0(OH)2のような
リン化合物、区03、日3B03、(RO)3B、RB
(OR′)2、R280R′、RB(OH)2、R28
0日、R3B、(RBO)。(R2B)20のようなホ
ウ素化合物、日3As03、日3As04、(RO)3
As、(RO)2AsOH、RAs(OR)2、RAS
H2、R2$日、R3As、RAs0、(R2$)20
、R3As0、RAs(OH)2、RAs0(OH)2
、R2$(OH)のようなヒ素化合物、日3Sb04、
日3Sb03、Hぶb207、日5Sb30,o、(R
O)3Sb、(RO)2Sb(OH)、RSb(OR′
)2、R5Sh、RSb○、(R2Sb)20、R3S
b○、Rぶb○(OH)、RSb○(OH)2のような
アンチモン化合物、Zn(OCOCH3)2、Zn(O
R)2のような亜鉛化合物、Pb(OCOCH3)4、
Pb(OR)4のような鈴化合物、R2Ga(OH)、
RGa(OH)2のようなカリウム化合物(ただし上記
の式中のR,R′はアルキル基又はアリール基)及びこ
れらの混合物などが用いられる。また、有機高分子膜形
成剤としては、アルコールとヱステルと主成分とする有
機溶剤に可溶で、ヒドロキシシランと相溶性を有する高
分子化合物、例えばポリ酢酸ビニル、ポリピニルホルマ
ール、ポリビニルアセタール、ポリビニルブチラール、
ポリビニルエーテル、ポリビニルピロリドン、エチルセ
ルロース、セラツク、フェノール樹脂、ヱポキシ樹脂、
ポリアミド樹脂、ポリウレタン樹脂及びこれらの混合物
などが用いられる。本発明により得られるシリカ系被膜
形成用塗布液は、通常、シリカ(Si02)換算濃度で
1〜20重量%に調整して使用に供される。The glass-forming agent is a compound soluble in an organic solvent containing alcohol and ester as main components, and is vitrified by heat treatment, such as (RO)3P, (PO)2
POH, (RO)3P0, RP(OR')2, R2P(
Phosphorus compounds such as OH), R2P○(OH), RP0(OH)2, Ward 03, Day 3B03, (RO)3B, RB
(OR')2, R280R', RB(OH)2, R28
Day 0, R3B, (RBO). Boron compounds such as (R2B)20, 3As03, 3As04, (RO)3
As, (RO)2AsOH, RAs(OR)2, RAS
H2, R2$day, R3As, RAs0, (R2$)20
, R3As0, RAs(OH)2, RAs0(OH)2
, arsenic compounds such as R2$(OH), 3Sb04,
Sun3Sb03, Hb207, Sun5Sb30,o, (R
O)3Sb, (RO)2Sb(OH), RSb(OR'
)2, R5Sh, RSb○, (R2Sb)20, R3S
Antimony compounds such as b○, Rb○(OH), RSb○(OH)2, Zn(OCOCH3)2, Zn(O
R) Zinc compounds such as Pb(OCOCH3)4,
Bell compounds such as Pb(OR)4, R2Ga(OH),
Potassium compounds such as RGa(OH)2 (wherein R and R' in the above formula are alkyl groups or aryl groups) and mixtures thereof are used. In addition, as the organic polymer film forming agent, a polymer compound which is soluble in an organic solvent mainly composed of alcohol and ester and is compatible with hydroxysilane, such as polyvinyl acetate, polypynyl formal, polyvinyl acetal, polyvinyl butyral,
Polyvinyl ether, polyvinylpyrrolidone, ethyl cellulose, shellac, phenolic resin, epoxy resin,
Polyamide resins, polyurethane resins, mixtures thereof, etc. are used. The coating liquid for forming a silica-based film obtained by the present invention is usually adjusted to a concentration of 1 to 20% by weight in terms of silica (Si02) before use.
また、ガラス質形成剤を加える場合は、シリカに対して
10〜500重量%の濃度で、有機高分子膜形成剤を加
える場合は、塗布液の粘度と形成される被膜の厚さの関
係を考慮し、シリかこ対して10〜50の重量%の濃度
で用いるのがよい。本発明の塗布液を施すのに適した基
体としては、アルコールとェステルを主成分とする有機
溶剤に侵されない材料、例えばガラス、セラミックス、
マイカ、シリコン、ゲルマニウム、ガリウム、アルミニ
ウム、銅、鉄、銀、金、ステンレス鋼、叢銅、マイラー
、ゼラチン、ポリエステル、ポリイミドなどがあげられ
る。In addition, when adding a glass-forming agent, the concentration is 10 to 500% by weight based on silica, and when adding an organic polymer film-forming agent, the relationship between the viscosity of the coating solution and the thickness of the film formed should be adjusted. Taking this into account, it is preferable to use it at a concentration of 10 to 50% by weight based on the silicone. Substrates suitable for applying the coating solution of the present invention include materials that are not attacked by organic solvents containing alcohol and ester as main components, such as glass, ceramics,
Examples include mica, silicon, germanium, gallium, aluminum, copper, iron, silver, gold, stainless steel, copper alloy, mylar, gelatin, polyester, and polyimide.
本発明により得られる塗布液をこれらの基体に塗布する
には、スピンナー法、浸せき引上げ法「スプレー法、ス
クリーン印刷法、ロールコーター法、刷毛塗り法など慣
用の方法を用いて行うことができる。The coating solution obtained according to the present invention can be applied to these substrates by a conventional method such as a spinner method, a dip-and-pull method, a spray method, a screen printing method, a roll coater method, or a brush coating method.
このようにして、塗布したのち、通常は空気中、150
oo以上の温度で熱処理すれば、シリカ被膜、シリカ系
ガラス被膜あるいはシリカ系ガラス高分子被膜が形成さ
れる。本発明によると、原料中及び生成物中にハロゲン
化物が全く存在せず「 また反応促進剤の添加量によっ
て反応進行状態を制御できるため〜得られる塗布液はロ
ットの差がなく安定なものとなるし、塩化水素や酢酸ク
ロリドなどの創生物を伴わないため、工程の簡略化が可
能となるという利点がある。After applying in this way, usually 150
If heat treatment is performed at a temperature of oo or more, a silica film, a silica-based glass film, or a silica-based glass polymer film is formed. According to the present invention, there are no halides present in the raw materials or products, and since the progress of the reaction can be controlled by adjusting the amount of reaction accelerator added, the resulting coating solution is stable and has no difference between lots. Moreover, since it does not involve any created substances such as hydrogen chloride or acetic chloride, it has the advantage of simplifying the process.
他方、本発明により得られる塗布液を使用すると、0.
05〜20山肌の膜厚で、平滑かつ均一な、しかもピン
ホールのない連続性被膜を簡単に形成させることができ
る。On the other hand, when the coating liquid obtained according to the present invention is used, 0.
It is possible to easily form a continuous film that is smooth, uniform, and pinhole-free with a film thickness of 05 to 20 mounds.
したがって、表面に段差(凹凸)を有する基体に塗布し
た場合でも、表面を平滑化することができ、配線交さ部
で断線を起したり、またそれが原因で歩留低下、信頼性
低下をもたらすことがないので、電子部品用の多層配線
の絶縁膜として好適である。また、形成された被膜は、
耐摩耗性及び耐薬品性が優れているところから、アルミ
ニウム、鉄、銅、銀、金、ステンレス鋼、黄銅などの金
属類、それらのめつき面、あるいはゼラチン、ポリエス
テルなどの高分子被膜の表面に塗布し、保護するものと
しても好適である。さらに、半導体やガラス板に塗布す
ると、ナトリウムイオンなどの防害不純物を楠促すると
いう作用を示すことから、表面安定化膜(パシベーショ
ン膜)として用いることもできる。そのほか、液晶セル
用の鞠向膜、静電防止膜、半導体用ドープドオキシド膜
などとしても好適である。次に実施例によって本発明を
さらに詳細に説明する。実施例 1
オルトケィ酸ブチル320夕とマレィン酸232夕をメ
チルアルコール128外こ溶解した液とを混合し(25
℃における粘度2.9比p)室温でかきまぜながら触媒
として86.5%オルトリン酸30夕を加えると発熱反
応によって反応は進行し液温は約500Cまで上昇する
。Therefore, even when the coating is applied to a substrate with steps (irregularities) on the surface, the surface can be smoothed, preventing wire breakage at wiring intersections, and reducing yield and reliability due to this. Therefore, it is suitable as an insulating film for multilayer wiring for electronic components. In addition, the formed film is
Due to its excellent wear resistance and chemical resistance, it is suitable for metals such as aluminum, iron, copper, silver, gold, stainless steel, and brass, their plated surfaces, and surfaces of polymer coatings such as gelatin and polyester. It is also suitable for coating and protecting the skin. Furthermore, when applied to semiconductors or glass plates, it exhibits the effect of promoting anti-harm impurities such as sodium ions, so it can also be used as a surface stabilizing film (passivation film). In addition, it is suitable as a dielectric film for liquid crystal cells, an antistatic film, a doped oxide film for semiconductors, and the like. Next, the present invention will be explained in more detail with reference to Examples. Example 1 A solution prepared by dissolving 320 g of butyl orthosilicate and 232 g of maleic acid in 128 g of methyl alcohol was mixed (25 g.
Viscosity at °C: 2.9 ratio (p) When 30 minutes of 86.5% orthophosphoric acid is added as a catalyst while stirring at room temperature, the reaction proceeds due to exothermic reaction and the liquid temperature rises to about 500C.
そのままかきまぜたのち、室温で4日間放置する(粘度
3.2&p)。After stirring as it is, leave it at room temperature for 4 days (viscosity 3.2&p).
この反応における粘度上昇はリン酸の添加及びブチルア
ルコールの生成によるものである。反応液中にはマレィ
ン酸ヱステルとヒドロキシシランが生成されている。The increase in viscosity in this reaction is due to the addition of phosphoric acid and the formation of butyl alcohol. Maleic acid ester and hydroxysilane are produced in the reaction solution.
この反応液の固形分濃度は10.5%であった。上記の
反応液にエチルアルコールと酢酸エチルとアセトンを2
:1:1の割合に混合した液を加えて8.0重量%に調
整し、無水ホウ酸5夕を溶解し、0.45山肌フィルタ
ーによってろ過を行ってシリカーリンーボロンガラス被
膜用塗布液を製造する。The solid content concentration of this reaction solution was 10.5%. Add ethyl alcohol, ethyl acetate, and acetone to the above reaction solution.
: Add a solution mixed at a ratio of 1:1 to adjust the concentration to 8.0% by weight, dissolve boric anhydride, and filter through a 0.45 filter to obtain a coating solution for silica phosphorus-boron glass coating. Manufacture.
このようにして得られた塗布液を浸せき引き上げ法によ
ってフオトプロセスに用いる。ガラス乾板上(ゼラチン
−銀塩によるパターンの形成されたネガ)に塗布し20
0ooで30分間熱処理したところ次のようなシリカ系
ガラス被膜が得られた。引き上げ速度(弧/分)
膜厚(A)20 1,2
0030 1,50040
1,700この被膜は
Si02とP205とB203の3成分が均質に分布し
Si−○−Si−「P−○−P、B−○−B、Si−○
−P、Si−0−B、Si−○−P−0−B単位で網目
構造を形成しているものと思われる。The coating liquid thus obtained is used for photoprocessing by dipping and pulling up. Coated on a glass dry plate (gelatin-silver salt patterned negative) for 20 minutes.
When heat treated at 0oo for 30 minutes, the following silica-based glass coating was obtained. Pulling speed (arc/min)
Film thickness (A) 20 1,2
0030 1,50040
1,700 In this film, the three components Si02, P205, and B203 are homogeneously distributed, and Si-○-Si-"P-○-P, B-○-B, Si-○
-P, Si-0-B, and Si-◯-P-0-B units seem to form a network structure.
乾板上に塗布された被膜(厚さ1200〜1700A)
の硬度は、鉛筆硬度(引きかき強度)で班まで異状なく
本被膜の塗布されていない乾板の鉛筆硬度7日より硬度
は増していた。Coating applied on dry plate (thickness 1200-1700A)
The pencil hardness (scratching strength) was higher than the 7-day pencil hardness of the dry plate to which the present film was not coated, with no abnormalities up to the spots.
また、紫外線吸収も少なく波長400〜70Mmにおい
て透過率減少は5%であった。実施例 2
オルトケイ酸エチル100夕と酢酸100夕をメチルア
ルコール260のこ溶解する。In addition, ultraviolet absorption was low, and the transmittance decreased by 5% at wavelengths of 400 to 70 mm. Example 2 100 parts of ethyl orthosilicate and 100 parts of acetic acid are dissolved in 260 parts of methyl alcohol.
このときの250のこおける粘度は25qoで0.7耳
pであった。次にこの溶液を室温でかさまぜながら五酸
化リン0.46夕を加え、65qCに保持して3時間か
きまぜたところ加水分解反応は、ほぼ終了した。このと
きの粘度は0.7&pで混合直後と同一の値を示した。
この反応液を蒸発乾固することによって得られる固形分
の濃度は7.5重量%であった。さらにこの反応液にメ
チルアルコールを加えて固形分濃度を6重量%に調整し
たのち、0.45仏肌孔径のフィルターを用いてろ過し
、シリカ被膜形成用塗布液を調製し、スピンナーを用い
てシリコン基板上に3,00仇pmで塗布し、2000
0で30分間、さらに700二0で30分間熱処理した
ところ膜厚11仇mの均一な被膜が得られた。At this time, the viscosity at 250 mm was 25 qo and 0.7 pm. Next, 0.46 g of phosphorus pentoxide was added to this solution while stirring it at room temperature, and the mixture was kept at 65 qC and stirred for 3 hours, and the hydrolysis reaction was almost completed. The viscosity at this time was 0.7&p, the same value as immediately after mixing.
The solid content obtained by evaporating this reaction solution to dryness was 7.5% by weight. Furthermore, methyl alcohol was added to this reaction solution to adjust the solid content concentration to 6% by weight, and then filtered using a filter with a pore diameter of 0.45 mm to prepare a coating solution for forming a silica film. Coated on a silicon substrate at 3,00 pm, 2,000 pm
After heat treatment at 0 for 30 minutes and then at 70,020 for 30 minutes, a uniform film with a thickness of 11 m was obtained.
比較例
オルトケイ酸エチル60夕、エチルアルコール145夕
、酢酸エチルェステル60夕、無水酢酸10夕及び水2
1夕を混合溶解した溶液(25ooにおける粘度0.9
&p)に五酸化リン150雌を添加し、690に保持し
て3時間かきまぜたところ、25COにおける反応液の
粘度は1.1次pに上昇していた。Comparative Example Ethyl orthosilicate 60 times, ethyl alcohol 145 times, ethyl acetate 60 times, acetic anhydride 10 times and water 2 times
A solution (viscosity at 250 mm: 0.9
When phosphorus pentoxide 150 was added to the mixture and stirred for 3 hours while maintaining the temperature at 690, the viscosity of the reaction solution at 25CO had increased to 1.1 order p.
この上昇は、オルトケイ酸エチルの加水分解により生じ
たシラノールの水酸基同士が脱水縮合反応を起しオリゴ
マーが生成したためと思われる。反応液中の固形分濃度
は7.5重量%であった。さらに、この反応液にエチル
アルコールを加えて固形分濃度を6重量%に調整したの
ち、実施例2と同様にして被膜を形成したところ、被膜
にストライェイシヨンがみられた。This increase is thought to be due to the dehydration condensation reaction between the hydroxyl groups of the silanol produced by the hydrolysis of ethyl orthosilicate, resulting in the production of oligomers. The solid content concentration in the reaction solution was 7.5% by weight. Further, ethyl alcohol was added to this reaction solution to adjust the solid content concentration to 6% by weight, and then a film was formed in the same manner as in Example 2. Straining was observed in the film.
実施例 3
モノメチルトリエトキシシラン89夕とメチルアルコー
ル80夕と氷酢酸105夕とアセトン160夕とを混合
する。Example 3 89 parts of monomethyltriethoxysilane, 80 parts of methyl alcohol, 105 parts of glacial acetic acid, and 160 parts of acetone are mixed.
次にこの溶液を室温でかさまぜながら、次亜リン酸5夕
を加え、そのままかきまぜたのち、室温で4日間放置す
る。この反応液の固形分濃度は9.0重量%であった。Next, while stirring this solution at room temperature, add hypophosphorous acid and add 50% of hypophosphorous acid. After stirring, the solution is left at room temperature for 4 days. The solid content concentration of this reaction solution was 9.0% by weight.
上記反応液を0.45山肌孔径のフィルターを用いてろ
過し、シリカ被膜形成用塗布液とし、スピンナ−を用い
てシリコン基板上に300仇pmで塗布し、100つ0
で1び分間、さらに500o0で3び分間熱処理したと
ころ、膜厚25皿mの均一な被膜が得られる。実施例
4
モノエチルトリエトキシシラン96夕とブチルアルコー
ル296夕と氷酢酸210夕とを混合した溶液に五酸化
リン1夕を添加し、5500に保持して6時間かきまぜ
たところ加水分解反応はほど終了した。The above reaction solution was filtered using a filter with a pore diameter of 0.45 mounds to obtain a coating solution for forming a silica film, which was coated onto a silicon substrate at 300 pm using a spinner.
When heat treated for 1 minute at 500°C and for 3 minutes at 500o0, a uniform film with a thickness of 25 m was obtained. Example
4 One day of phosphorus pentoxide was added to a solution of 96 times of monoethyltriethoxysilane, 296 times of butyl alcohol, and 210 times of glacial acetic acid, and when the mixture was kept at 5,500 and stirred for 6 hours, the hydrolysis reaction was almost completed. .
Claims (1)
ルとアルコール2〜10モルとの混合物に、リン酸を加
え、かつ水を添加することなく、反応液中のアルコキシ
シラン及び有機カルボン酸の含有量が当初の20重量%
以下になるまで反応させ、ヒドロキシシランを生成させ
ることを特徴とするヒドロキシシラン単量体を主成分と
したシリカ系被膜形成用塗布液の製法。1 Add phosphoric acid to a mixture of 1 mole of alkoxysilane, 2 to 5 moles of organic carboxylic acid, and 2 to 10 moles of alcohol, and determine the content of alkoxysilane and organic carboxylic acid in the reaction solution without adding water. is 20% of the original weight
A method for producing a coating liquid for forming a silica-based film containing a hydroxysilane monomer as a main component, which comprises reacting until the following reaction occurs to produce hydroxysilane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13922083A JPS608263B2 (en) | 1983-07-29 | 1983-07-29 | Manufacturing method of coating liquid for silica film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13922083A JPS608263B2 (en) | 1983-07-29 | 1983-07-29 | Manufacturing method of coating liquid for silica film formation |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10826678A Division JPS5534276A (en) | 1978-09-04 | 1978-09-04 | Preparation of coating liquid for silica-based film formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5962675A JPS5962675A (en) | 1984-04-10 |
| JPS608263B2 true JPS608263B2 (en) | 1985-03-01 |
Family
ID=15240303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13922083A Expired JPS608263B2 (en) | 1983-07-29 | 1983-07-29 | Manufacturing method of coating liquid for silica film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS608263B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4798823B2 (en) * | 2000-04-04 | 2011-10-19 | 旭化成株式会社 | Porous silicon oxide coating |
| US6559070B1 (en) * | 2000-04-11 | 2003-05-06 | Applied Materials, Inc. | Mesoporous silica films with mobile ion gettering and accelerated processing |
| JP6215777B2 (en) * | 2013-06-27 | 2017-10-18 | 信越化学工業株式会社 | Coating-type BPSG film forming composition, substrate on which a film is formed with the composition, and pattern forming method using the composition |
-
1983
- 1983-07-29 JP JP13922083A patent/JPS608263B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5962675A (en) | 1984-04-10 |
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