JPS609591B2 - Method for preventing oxidation of heat-treated copper coatings - Google Patents
Method for preventing oxidation of heat-treated copper coatingsInfo
- Publication number
- JPS609591B2 JPS609591B2 JP11078379A JP11078379A JPS609591B2 JP S609591 B2 JPS609591 B2 JP S609591B2 JP 11078379 A JP11078379 A JP 11078379A JP 11078379 A JP11078379 A JP 11078379A JP S609591 B2 JPS609591 B2 JP S609591B2
- Authority
- JP
- Japan
- Prior art keywords
- heat
- copper coating
- preventing oxidation
- ceramic body
- treated copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 55
- 229910052802 copper Inorganic materials 0.000 title claims description 55
- 239000010949 copper Substances 0.000 title claims description 55
- 238000000576 coating method Methods 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 26
- 230000003647 oxidation Effects 0.000 title claims description 13
- 238000007254 oxidation reaction Methods 0.000 title claims description 13
- 239000011248 coating agent Substances 0.000 claims description 46
- 239000000919 ceramic Substances 0.000 claims description 26
- -1 polyethylene Polymers 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 8
- 239000004698 Polyethylene Substances 0.000 claims description 7
- 229920000573 polyethylene Polymers 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000004743 Polypropylene Substances 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 6
- 238000007772 electroless plating Methods 0.000 claims description 6
- 238000007733 ion plating Methods 0.000 claims description 6
- 229920001155 polypropylene Polymers 0.000 claims description 6
- 229920002223 polystyrene Polymers 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 238000003763 carbonization Methods 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 10
- 229910052573 porcelain Inorganic materials 0.000 description 9
- 229910000831 Steel Inorganic materials 0.000 description 7
- 150000008282 halocarbons Chemical class 0.000 description 7
- 239000010959 steel Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 5
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000004922 lacquer Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Preventing Corrosion Or Incrustation Of Metals (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Heat Treatment Of Nonferrous Metals Or Alloys (AREA)
Description
【発明の詳細な説明】
この発明は譲露体、絶縁体、抵抗体、半導体などのセラ
ミック素体に無電解〆ッキ法、真空蒸着法、スパッタリ
ング法、イオンプレーティング法などにより形成され、
その後熱処理された銅被膜の酸化防止法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for forming a ceramic body such as a resistor, an insulator, a resistor, or a semiconductor by an electroless plating method, a vacuum evaporation method, a sputtering method, an ion plating method, etc.
The present invention relates to a method for preventing oxidation of a copper coating that has been subsequently heat-treated.
一般に、セラミック素体などの非導電体の表面に銅被膜
を形成する方法としては、無電解〆ッキ法、真空蒸着法
、スパッタリング法、イオンプレーティング法などがあ
り、回路基板上の導電部、あるいはセラミックコンデン
サの電極部分を構成する場合などに用途があることは知
られている。In general, methods for forming a copper film on the surface of a non-conductive material such as a ceramic body include electroless plating, vacuum evaporation, sputtering, and ion plating. It is known that it can be used in forming electrode parts of ceramic capacitors.
そして上記した方法により形成された銅被膜は繊密化、
金属化、密着性向上および安定化を図るため、膜を形成
した後熱処理に付されるのが通常である。この熱処理は
一般に銅被膜が酸素と反応しないように不活性雰囲気中
で行われている。このように熱処理の工程に付すること
によってはじめて無電凝メッキ法、真空蒸着法、スパッ
タリング法、イオンプレーテイング法になどによって形
成した銅被膜は純鋼に近い電気特性を有する銅被膜とな
り、高信頼性の電子部品を構成することになる。しかし
ながら、無電解〆ッキ法、真空蒸着法、スパッタリング
法などにより形成された銅被膜は熱処理工程に付すと、
熱処理を行わない銅被膜にくらべて酸化されやすく、経
時変化も受けやすくなる。Then, the copper coating formed by the above method is densified,
In order to improve metallization, adhesion, and stability, a heat treatment is usually performed after the film is formed. This heat treatment is generally performed in an inert atmosphere to prevent the copper coating from reacting with oxygen. By subjecting it to this heat treatment process, the copper coating formed by electroless plating, vacuum evaporation, sputtering, ion plating, etc. becomes a copper coating with electrical properties close to those of pure steel, making it highly reliable. It constitutes a digital electronic component. However, when copper coatings formed by electroless coating, vacuum evaporation, sputtering, etc. are subjected to a heat treatment process,
Compared to a copper coating that is not heat-treated, it is more easily oxidized and more susceptible to changes over time.
これは銅被膜そのものがもともと酸化されやすい金属で
ある上に、高温の熱処理を履歴することによって、鋼被
膜表面に触媒活性が付与され、一層酸化されやすい状況
が形成されることによる。This is because the copper coating itself is a metal that is easily oxidized, and the high-temperature heat treatment imparts catalytic activity to the surface of the steel coating, creating conditions that make it more susceptible to oxidation.
このため、熱処理を行った銅被膜を、たとえばコンデン
サの電極としてそのまま用いると、酸化膜の形成により
導電率の低下を来たし、また熱処理後いまら〈放置する
だけで、半田付け性も低下するという好ましくない現象
がみられた。したがって、この発明の主たる目的は「熱
処理を行った銅被膜表面の酸化を防止し、安定化させる
ことにより、銅被膜の長期保存、ひいては銅被膜を形成
したセラミック素体よりなる電子部品の高信頼化を可能
にすることにある。For this reason, if a heat-treated copper film is used as it is, for example as an electrode for a capacitor, the conductivity will decrease due to the formation of an oxide film, and it is also said that if the heat-treated copper film is left alone, the solderability will deteriorate. An unfavorable phenomenon was observed. Therefore, the main purpose of this invention is to "prevent the oxidation of the heat-treated copper coating surface and stabilize it, thereby improving the long-term preservation of the copper coating and increasing the reliability of electronic components made of ceramic bodies on which the copper coating is formed." The goal is to make it possible.
すなわち、この発明の要旨とするところは、表面に銅被
膜を形成したセラミック素体を熱処理後、セラミック素
体の表面をポリエチレン、ポリプロピレン、ポリスチレ
ンのいずれか1種よりなる高分子化合物を溶解した揮発
性ハロゲン化炭化水素化合物溶液に接触させることを特
徴とするものである。That is, the gist of the present invention is that after heat-treating a ceramic body with a copper coating formed on its surface, the surface of the ceramic body is evaporated with a dissolved polymeric compound made of one of polyethylene, polypropylene, and polystyrene. This method is characterized by contacting with a halogenated hydrocarbon compound solution.
ここで、揮発性ハロゲン化炭化水素化合物としては、た
とえばトリクレン、パークレン、フレオン、クロルベン
ゼンなどがあり、これらはいずれも沸点が−29.8o
o〜13〆○の低沸点の既存物質である。Here, examples of volatile halogenated hydrocarbon compounds include trichrene, perchrene, freon, and chlorobenzene, all of which have a boiling point of -29.8°C.
It is an existing substance with a low boiling point of o~13〆○.
この発明方法の実施概要を説明すると、まず、誘電体、
絶縁体、抵抗体、半導体などのセラミック素体表面に、
無電解〆ッキ法、真空蒸着法、スパッタリング法、イオ
ンプレーティング法などの薄膜形成技術により銅被膜を
形成する。To explain the outline of the implementation of the method of this invention, first, a dielectric material,
On the surface of ceramic bodies such as insulators, resistors, and semiconductors,
The copper coating is formed using thin film forming techniques such as electroless plating, vacuum evaporation, sputtering, and ion plating.
たとえば、セラミック素体として誘電体セラミックを用
い、表面に銅被膜を形成することによりコンデンサが構
成でき、またセラミック蓑体としてアルミナ、ジルコニ
ア、ホルステライトなどのセラミック基板を用い、表面
に銅被膜の回路パターンを形成すれば回路用基板を構成
することができる。For example, a capacitor can be constructed by using dielectric ceramic as the ceramic body and forming a copper coating on the surface, and a circuit with a copper coating on the surface by using a ceramic substrate such as alumina, zirconia, or holsterite as the ceramic body. By forming a pattern, a circuit board can be constructed.
そのほか、抵抗体、半導体などのセラミック素体表面に
銅被膜を形成することにより種々の電子部品が構成でき
る。このようにセラミック素体表面に各種方法により銅
被膜が形成された種々の電子部品は、その後窒素などの
不活性雰囲気中、たとえば約700qoの温度で熱処理
が行われる。In addition, various electronic components can be constructed by forming a copper coating on the surface of a ceramic element such as a resistor or a semiconductor. Various electronic components having copper coatings formed on the surfaces of ceramic bodies by various methods are then heat-treated in an inert atmosphere such as nitrogen at a temperature of, for example, about 700 qo.
熱処理された鋼被膜はこのとき金属化され、密着性も強
固になり、さらに電気特性なども向上して非常に好まし
い特性が付与される。At this time, the heat-treated steel coating is metallized, and its adhesion becomes strong, and its electrical properties are also improved, giving it very favorable properties.
しかし、熱処理により高温度の熱履歴を経るため、銅被
膜は触媒活性も付与され、ラネー鋼と同様の触媒能を有
した銅被膜となる。このような触媒活性は熱処理後、で
きるだけ早く、高分子化合物を溶解したトリクレン、パ
ークレン、フレオン、クロルベンゼンなどの揮発性ハ。However, since the copper coating undergoes a high-temperature thermal history through heat treatment, the copper coating is also given catalytic activity, resulting in a copper coating that has the same catalytic ability as Raney steel. Such catalytic activity is activated as soon as possible after heat treatment to dissolve high molecular compounds such as trichrene, perchrene, freon, and chlorobenzene.
ゲン化炭化水素化合物溶液に接触させれば、これら揮発
性ハロゲン化炭化水素化合物の彼叢作用によって、銅被
膜の活性点が消滅して触媒活性はなくなり、鋼被膜は安
定になり、酸化これにく〈なる。そしてさらに銅被膜表
面に高分子化合物の膜を形成することによって、銅被膜
の酸化と隆時変化が防止できる。熱処理後、高分子化合
物を溶解した揮発性ハロゲン化炭化水素化合物に接触さ
せるまでの時間は短かし、ほど好ましく、できれば熱処
理後30分以内に接触させることが好ましい。使用され
る高分子化合物としては、ポリエチレン、ポリプロピレ
ン、ポリスチレンのいずれか1種が用いられる。このう
ち、ポリエチレンは分子量が500〜2500のワック
ス状のものが用いられる。When brought into contact with a solution of halogenated hydrocarbon compounds, the active sites of the copper coating disappear due to the action of these volatile halogenated hydrocarbon compounds and the catalytic activity disappears, making the steel coating stable and preventing oxidation. It becomes. Further, by forming a film of a polymer compound on the surface of the copper coating, oxidation and change in elevation of the copper coating can be prevented. After the heat treatment, the time period until the polymer compound is brought into contact with the dissolved volatile halogenated hydrocarbon compound is preferably as short as possible, preferably within 30 minutes after the heat treatment. As the polymer compound used, any one of polyethylene, polypropylene, and polystyrene is used. Among these, wax-like polyethylene with a molecular weight of 500 to 2,500 is used.
またポリプロピレン、ポリスチレンは分子量が500〜
3000のものが用いられる。熱処理された銅被膜と、
高分子化合物を溶解した揮発性ハロゲン化炭化水素化合
物溶液との接触方法としては、この溶液を塗布、吹き付
け、浸薄するなどの方法があるが、いずれの方法を用い
てもよい。Also, polypropylene and polystyrene have a molecular weight of 500~
3000 are used. heat-treated copper coating,
Methods for contacting with a volatile halogenated hydrocarbon compound solution in which a polymer compound is dissolved include coating, spraying, and dipping with this solution, and any method may be used.
以下にこの発明を無電解銅メッキ析出被膜からなる実施
例について説明する。The present invention will be described below with reference to embodiments comprising electroless copper plating deposits.
実施例 1
直径6.5側、厚み0.5肋の酸化チタン系誘電体セラ
ミック素体を無電解鋼メッキ液に浸潰し、このセラミッ
ク素体の全面に銅〆ッキ被膜を形成した。Example 1 A titanium oxide dielectric ceramic body having a diameter of 6.5 mm and a thickness of 0.5 ribs was immersed in an electroless steel plating solution, and a copper lacquer coating was formed on the entire surface of the ceramic body.
次いで、このセラミック素体を窒素雰囲気中、7000
0の温度の熱処理に付し、冷却後、ステンレス製網かご
の容器に入れて、分子量1000のポリエチレンを1重
量%容解したトリクレン溶液を吹きつけた。このあと銅
被膜表面を自然乾燥させた。Next, this ceramic body was heated for 7000 min in a nitrogen atmosphere.
After being subjected to heat treatment at a temperature of 0, after cooling, it was placed in a container made of a stainless steel mesh basket, and a trichlene solution containing 1% by weight of polyethylene having a molecular weight of 1000 was sprayed thereon. After that, the surface of the copper coating was naturally dried.
このようにして得られたセラミック誘電体について、ポ
リエチレンを溶解したトリクレンを吹き付けたセラミッ
ク譲竜体とこのような処理をしていないセラミック誘電
体について、それぞれ2独特間自然雰囲気中に放置し、
銅被膜表面を観察したところ、この発明方法による処理
を行っていないものについては、褐色を呈しはじめ半田
付け性も低下した。The ceramic dielectric bodies thus obtained were left in a natural atmosphere for 2 hours, and the ceramic body was sprayed with trichlene containing dissolved polyethylene, and the ceramic dielectric body was not subjected to such treatment.
When the surface of the copper coating was observed, it was found that those not treated according to the method of the present invention began to take on a brown color and the solderability decreased.
しかしながらこの発明方法によるものはーカ月後放置し
たものについても、何らの変化も見られず、半田付け性
も良好であった。実施例 2
チタン酸ストロンチウム系の粒界絶縁型半導体磁器とし
て、直径10.&肋、厚み0.3肋のものを用意し、無
電解鋼メッキ液に浸潰し、半導体磁器の全面に銅〆ッキ
被膜を形成した。However, with the method of this invention, no change was observed even when left for one month, and the solderability was good. Example 2 Strontium titanate-based grain boundary insulated semiconductor porcelain with a diameter of 10. A piece with a thickness of 0.3 was prepared and immersed in an electroless steel plating solution to form a copper lacquer coating on the entire surface of the semiconductor porcelain.
次いでこの半導体磁器を窒素よりなる不活性雰囲気中、
700℃で熱処理した。Next, this semiconductor porcelain was placed in an inert atmosphere consisting of nitrogen.
Heat treatment was performed at 700°C.
引き続き、分子量1000のポリプロピレンを1重量%
溶解したフレオン溶液中に銅〆ツキ被膜を形成した半導
体磁器を約1分間浸潰した。この溶液から半導体磁器を
引き上げ、自然乾燥させて銅〆ッキ被膜を安定化させた
。Subsequently, 1% by weight of polypropylene with a molecular weight of 1000
The semiconductor porcelain on which the copper coating was formed was immersed in the dissolved Freon solution for about 1 minute. The semiconductor porcelain was pulled out of this solution and air-dried to stabilize the copper lacquer coating.
さらにこの半導体磁器を湿度95%、温度4000の条
件下で強制的に酸化したところ、5000hr後におい
ても銅被膜表面の色調変化は全くなく、また半田付け性
も良好であった。Furthermore, when this semiconductor porcelain was forcibly oxidized under conditions of humidity of 95% and temperature of 4000, there was no change in color tone of the surface of the copper coating even after 5000 hours, and the solderability was also good.
実施例 3
実施例2と同様に銅〆ッキ被膜を形成したチタン酸スト
ロンチウム系の粒界絶縁型半導体磁器を用い、次いで窒
素よりなる不活性雰囲気中、700℃で熱処理した。Example 3 A strontium titanate-based grain boundary insulated semiconductor porcelain coated with a copper plating film was used in the same manner as in Example 2, and then heat treated at 700° C. in an inert atmosphere containing nitrogen.
引き続き、分子量1000のポリスチレンを1重量%溶
解したフレオン溶液中に銅〆ッキ被膜を形成した半導体
磁器を約1分間浸潰した。その後実施例2と同様に処理
したところ、銅被膜表面の色調変化は全くなく、また半
田付げ性も良好であった。Subsequently, the semiconductor porcelain on which the copper-plated film was formed was immersed for about 1 minute in a Freon solution containing 1% by weight of polystyrene having a molecular weight of 1000. Thereafter, when the copper coating was treated in the same manner as in Example 2, there was no change in color tone on the surface of the copper coating, and the solderability was also good.
以上の各実施例から明らかなように、この発明によれば
、無電解〆ツキ法により表面に銅被膜を形成したセラミ
ック素体の該銅被膜表面を熱処理後、ポリエチレン、ポ
リプロピレン、ポリスチレンのいずれか1種よりなる高
分子化合物を溶解したトリクレンやフレオン等の揮発性
ハロゲン化炭化水素化合物に接触させると銅被膜表面の
酸化現象は見られず、半田付け性も良好であるなど、熱
処理後の銅被膜の酸化防止法としてきわめて有用なもの
である。なお、上記した実施例では無電解〆ッキ法によ
り形成した銅被膜の例について説明したが、そのほか夏
空蒸着法、スパッタリング法、イオンプレーティング法
による銅被膜についてこの発明を適用しても同様な効果
が得られることはもちろんである。As is clear from the above embodiments, according to the present invention, after heat-treating the surface of the copper coating of a ceramic body on which a copper coating is formed by an electroless finishing method, polyethylene, polypropylene, or polystyrene is used. When a polymer compound consisting of one type of polymer is brought into contact with a volatile halogenated hydrocarbon compound such as tricrene or freon, no oxidation phenomenon is observed on the surface of the copper coating, and the solderability is good. It is extremely useful as a method for preventing oxidation of coatings. In addition, in the above-mentioned embodiment, an example of a copper film formed by an electroless plating method was explained, but the present invention can also be applied to a copper film formed by a summer air evaporation method, a sputtering method, or an ion plating method. Needless to say, this method can provide beneficial effects.
また、セラミック素体については誘電体セラミック素体
、粒界絶縁型半導体磁器について説明したが、そのほか
誘電体、絶縁体、半導体、抵抗体よりなるものに銅被膜
を形成したものにこの発明を適用しても同様な効果が得
られる。Regarding ceramic bodies, we have described dielectric ceramic bodies and grain-boundary insulated semiconductor porcelain, but this invention can also be applied to other materials made of dielectrics, insulators, semiconductors, and resistors with copper coatings formed on them. A similar effect can be obtained.
Claims (1)
、セラミツク素体の表面をポリエチレン、ポリプロピレ
ン、ポリスチレンのいずれか1種よりなる高分子化合物
を溶解した揮発性ハロゲン化炭化水素化合物溶液に接触
させることを特徴とする熱処理された銅被膜の酸化防止
法。 2 銅被膜は、無電解メツキ法、真空蒸着法、スパツタ
リング法、イオンプレーテイング法のいずれか1種によ
り形成されたものであることを特徴とする特許請求の範
囲第1項記載の熱処理された銅被膜の酸化防止法。 3 セラミツク素体は、誘電体、絶縁体、抵抗体、半導
体のうちいずれか1種であることを特徴とする特許請求
の範囲第1項記載の熱処理された銅被膜の酸化防止法。 4 セラミツク素体は誘電体であり、銅被膜は容量取り
出し用の電極であることを特徴とする特許請求の範囲第
1項記載の熱処理された銅被膜の酸化防止法。5 セラ
ミツク素体の熱処理は不活性雰囲気中で行われることを
特徴とする特許請求の範囲第1項記載の熱処理された銅
被膜の酸化防止法。[Claims] 1. After heat treating a ceramic body with a copper coating formed on its surface, the surface of the ceramic body is subjected to volatile halogenated carbonization in which a polymeric compound made of one of polyethylene, polypropylene, and polystyrene is dissolved. A method for preventing oxidation of a heat-treated copper film, which method comprises contacting a heat-treated copper film with a hydrogen compound solution. 2. The heat-treated copper coating according to claim 1, wherein the copper coating is formed by any one of electroless plating, vacuum evaporation, sputtering, and ion plating. Method for preventing oxidation of copper coatings. 3. The method for preventing oxidation of a heat-treated copper coating according to claim 1, wherein the ceramic body is any one of a dielectric, an insulator, a resistor, and a semiconductor. 4. The method for preventing oxidation of a heat-treated copper coating as claimed in claim 1, wherein the ceramic body is a dielectric and the copper coating is an electrode for taking out a capacitance. 5. The method for preventing oxidation of a heat-treated copper coating as claimed in claim 1, wherein the heat treatment of the ceramic body is carried out in an inert atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11078379A JPS609591B2 (en) | 1979-08-29 | 1979-08-29 | Method for preventing oxidation of heat-treated copper coatings |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11078379A JPS609591B2 (en) | 1979-08-29 | 1979-08-29 | Method for preventing oxidation of heat-treated copper coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5635759A JPS5635759A (en) | 1981-04-08 |
| JPS609591B2 true JPS609591B2 (en) | 1985-03-11 |
Family
ID=14544498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11078379A Expired JPS609591B2 (en) | 1979-08-29 | 1979-08-29 | Method for preventing oxidation of heat-treated copper coatings |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS609591B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2561397B2 (en) * | 1991-06-11 | 1996-12-04 | 不二サッシ株式会社 | Electrolytic coloring method of aluminum or aluminum alloy |
-
1979
- 1979-08-29 JP JP11078379A patent/JPS609591B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5635759A (en) | 1981-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1030325B1 (en) | Solid electrolytic capacitor and method of manufacturing the same | |
| JPS5810880B2 (en) | How to improve adhesion of copper coating | |
| US4508756A (en) | Method for inhibiting oxidation of a copper film on ceramic body | |
| JPS5946310B2 (en) | Method for preventing oxidation of heat-treated copper coatings | |
| JPS62293608A (en) | Manufacture of solid electrolytic capacitor | |
| JPH09241862A (en) | Copper powder, copper paste and ceramic electronic part | |
| JPS609591B2 (en) | Method for preventing oxidation of heat-treated copper coatings | |
| JPS5946312B2 (en) | Method for preventing oxidation of heat-treated copper coatings | |
| JP2633387B2 (en) | Manufacturing method of dielectric resonator | |
| JPS5946311B2 (en) | Method for preventing oxidation of heat-treated copper coatings | |
| JPH037130B2 (en) | ||
| US4833004A (en) | Structure of copper conductor and method of forming same | |
| US4464422A (en) | Process for preventing oxidation of copper film on ceramic body | |
| JPS5892205A (en) | Thin film capacitor | |
| JPS607026B2 (en) | Heat treatment method for copper coating | |
| RU2083064C1 (en) | Process of manufacturing current conductive silver coats | |
| JPH0130286B2 (en) | ||
| US20040090303A1 (en) | Electrical component and method for producing the same | |
| US3034921A (en) | Metal coating and method of making the same | |
| JPH0358404A (en) | Manufacture of solid electrolytic capacitor | |
| JPS6248365B2 (en) | ||
| DE3038977C2 (en) | Method for preventing the oxidation of a copper surface and its application | |
| KR900002043B1 (en) | Manufacturing method of metallized plastic film for capacitor | |
| KR100850755B1 (en) | Manufacturing method of printed circuit board with capacitor | |
| JPH03116918A (en) | Capacitor |