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JPS6111464B2 - - Google Patents
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JPS6111464B2 - - Google Patents

Info

Publication number
JPS6111464B2
JPS6111464B2 JP3399180A JP3399180A JPS6111464B2 JP S6111464 B2 JPS6111464 B2 JP S6111464B2 JP 3399180 A JP3399180 A JP 3399180A JP 3399180 A JP3399180 A JP 3399180A JP S6111464 B2 JPS6111464 B2 JP S6111464B2
Authority
JP
Japan
Prior art keywords
ball
metal
eccentricity
metal ball
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3399180A
Other languages
Japanese (ja)
Other versions
JPS56131938A (en
Inventor
Teruo Kusakari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP3399180A priority Critical patent/JPS56131938A/en
Publication of JPS56131938A publication Critical patent/JPS56131938A/en
Publication of JPS6111464B2 publication Critical patent/JPS6111464B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01551—Changing the shapes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は、ワイヤボンデイング装置に係り、特
に半導体素子の電極と半導体素子載置台の電極と
を、溶断により金属ボールを形成した金属細線を
用いて接続するワイヤボンデイング装置の改良に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonding apparatus, and more particularly to a wire bonding apparatus that connects an electrode of a semiconductor element and an electrode of a semiconductor element mounting table using a thin metal wire formed into a metal ball by fusing. Regarding improvements.

従来より、IC、LGIおよびトランジスタ等の半
導体装置を製造するにあたつては、第１図に示す
如く、半導体素子の電極１と半導体素子載置台の
電極２とを金線等の金属細線３で接続することが
行われている。金属細線を接続するワイヤボンデ
イング装置は、貫通孔４ａを設けたキヤピラリ４
と、これを水平垂直動させる駆動装置（図示せ
ず）と、貫通孔４ａに垂直に配置され、かつ水平
動させる駆動装置（図示せず）に接続された水素
トーチ、電気トーチ等のトーチ５とを備えてい
る。前記貫通孔４ａに金属細線３を貫通させ、ト
ーチ５により金属細線３を溶断して金属ボール６
を形成さ、キヤピラリ４を動作させて電極１に金
属ボール６を押圧して金属細線をボンデイングす
る。 Conventionally, when manufacturing semiconductor devices such as ICs, LGIs, and transistors, as shown in FIG. Connections are being made. A wire bonding device for connecting thin metal wires uses a capillary 4 provided with a through hole 4a.
, a drive device (not shown) that moves the torch horizontally and vertically, and a torch 5 such as a hydrogen torch or an electric torch that is arranged vertically in the through hole 4a and connected to the drive device (not shown) that moves it horizontally. It is equipped with A thin metal wire 3 is passed through the through hole 4a, and the thin metal wire 3 is cut by a torch 5 to form a metal ball 6.
is formed and the capillary 4 is operated to press the metal ball 6 against the electrode 1 to bond the thin metal wire.

しかし、溶断により形成された金属ボールの外
径は、金属細線の直径に比較し、約３〜４倍の大
きさとなり、また上記以上の過大ボールが形成さ
れることもあり、バラツキが大きい。また、金属
細線の軸線に対する金属ボール中心線の偏心量
は、偏心しない理想ボール中心線に対し、30μｍ
程度になることがある。このような金属ボールを
使用してワイヤボンデイングを実施した場合、半
導体素子の電極エリアより食出し、隣接する他の
電極と電気的に接触して半導体装置の信頼性を損
つてしまうという欠点があつた。 However, the outer diameter of the metal ball formed by fusing is about 3 to 4 times larger than the diameter of the thin metal wire, and balls larger than the above may be formed, so there is a large variation. In addition, the amount of eccentricity of the center line of the metal ball with respect to the axis of the thin metal wire is 30 μm with respect to the ideal ball center line without eccentricity.
It may be to a certain extent. When wire bonding is performed using such metal balls, there is a drawback that they protrude from the electrode area of the semiconductor element and make electrical contact with other adjacent electrodes, impairing the reliability of the semiconductor device. Ta.

本発明は、以上の欠点を解消すべくなされたも
ので、信頼性の良い半導体装置を歩留良く製造す
るワイヤボンデイング装置を提供することを目的
とする。 The present invention has been made in order to eliminate the above-mentioned drawbacks, and an object of the present invention is to provide a wire bonding apparatus that can manufacture reliable semiconductor devices with a high yield.

以下、図面を参照して本発明の一実施例を詳細
に説明する。 Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

第２図に示すように、キヤピラリ４の動作を防
害しない直近位置であつて、トーチ５に対向する
位置に金属ボールの外径および偏心量を検出する
検出手段７が配置されている。検出手段７は、金
属ボール形状を拡大する光学系機構８と、この光
学系機構８の光軸が中心に垂直になるように配置
された２次元イメージセンサおよび処理装置１１
より構成されている。そして、このイメージセン
サ９の受光面は、光学系機構８の焦点と一致して
いる。また、光学系機構８と２次元イメージセン
サ９は筒体１０に収納されている。 As shown in FIG. 2, a detection means 7 for detecting the outer diameter and eccentricity of the metal ball is disposed at a position in the immediate vicinity that does not prevent the operation of the capillary 4 and is opposite to the torch 5. The detection means 7 includes an optical system mechanism 8 that magnifies the metal ball shape, and a two-dimensional image sensor and processing device 11 arranged so that the optical axis of this optical system mechanism 8 is perpendicular to the center.
It is composed of The light receiving surface of this image sensor 9 coincides with the focal point of the optical system mechanism 8. Further, the optical system mechanism 8 and the two-dimensional image sensor 9 are housed in a cylindrical body 10.

上記イメージセンサ９の出力は処理手段１１に
入力され、ここで、検出手段から入力された情報
量が処理をれ、出力端１２から出力される。 The output of the image sensor 9 is input to the processing means 11, where the amount of information input from the detection means is processed and output from the output end 12.

次に動作について説明すれば、キヤピラリ４の
貫通孔４ａに貫通された金属細線３は、トーチ５
によつて溶断され、その先端に金属ボール６が形
成される。この金属ボールは光学系機構８により
拡大され、２次元イメージセンサ６の表面に像を
結像する。そして第３図に示すように、イメージ
センサ９は、イメージセンサの検出エリア２０の
左上端を（０，０）地点とするｘ座標、ｙ座標に
対応さ、金属細線３、金属ボール６の像を二値化
する。 Next, to explain the operation, the thin metal wire 3 passed through the through hole 4a of the capillary 4 is connected to the torch 5.
The metal ball 6 is formed at the tip thereof. This metal ball is magnified by the optical system mechanism 8 and forms an image on the surface of the two-dimensional image sensor 6. As shown in FIG. 3, the image sensor 9 detects the image of the thin metal wire 3 and the metal ball 6 corresponding to Binarize.

例えば、像の部分を“１”像の無い部分を
“０”とする電気信号に変換する。 For example, an electric signal is converted into an electric signal in which an image part is set to "1" and a part without an image is set to "0".

そして、この二値化信号はそれぞれに対応する
ｘ座標、ｙ座標の信号と共に処理手段１１に入力
される。 Then, this binary signal is input to the processing means 11 together with the corresponding x-coordinate and y-coordinate signals.

そして、この処理手段１１では、前述二値化信
号、およびそれに対応するｘ座標、ｙ座標の信号
により金属細線３の上部のｘ座標x1、ボール６の
上端のｙ座標y1、ボール６の左端のｘ座標x2、ボ
ール６の横方向最長径Bx、およびボール６の縦
方向最長径Dsyを算出する。そしてこの算出値を
もとに、下に示す式、 Δｘ＝x1〜（x2＋Bx／２） により偏心量Δｘが算出される。 Then, in this processing means 11, the x-coordinate x 1 of the upper part of the thin metal wire 3, the y-coordinate y 1 of the upper end of the ball 6, the y-coordinate y 1 of the upper end of the ball 6, The x coordinate x 2 of the left end, the longest horizontal diameter Bx of the ball 6, and the longest vertical diameter Dsy of the ball 6 are calculated. Then, based on this calculated value, the eccentricity amount Δx is calculated using the formula shown below: Δx=x 1 to (x 2 +Bx/2).

そして処理手段１１にはあらかじめ偏心量Δｘ
の規格値（許容値）が設定されており、この規格
値と実際の偏心量Δｘとが比較される。 The processing means 11 has an eccentricity Δx in advance.
A standard value (tolerable value) is set, and this standard value is compared with the actual eccentricity Δx.

同様にボール６の外径Bx、Dsyの規格値も処理
手段１１に設定されており、この規格値と実際の
ボール６の外径Bx，Dsyが比較される。 Similarly, standard values for the outer diameters Bx and Dsy of the ball 6 are also set in the processing means 11, and these standard values and the actual outer diameters Bx and Dsy of the ball 6 are compared.

そして、偏心量Δｘおよびボール６の外径
Bx、Dsyともに各規格値内にある場合は通常の動
作でボンデイングが行なわれる。また、規格外の
ボール外径または偏心量を有するボールであると
判断した場合は、出力端１２より信号を出力し、
この信号をトーチ５に接続された駆動装置に伝達
し、トーチ５によつて再び金属ボールを形成させ
る。再形成された金属ボールについては、前述と
同様の処理がなされる。そして、規格値内の金属
ボールが形成された場合のみボンデイングが実施
される。 Then, the eccentricity Δx and the outer diameter of the ball 6
If both Bx and Dsy are within their respective standard values, bonding is performed in normal operation. In addition, if it is determined that the ball has a non-standard ball outer diameter or eccentricity, a signal is output from the output end 12,
This signal is transmitted to a driving device connected to the torch 5, and the torch 5 causes the metal ball to be formed again. The re-formed metal ball is processed in the same manner as described above. Then, bonding is performed only when a metal ball within the standard value is formed.

以上説明したように本発明によれば、規格値内
に制限された金属ボールが形成され、これを用い
てワイヤボンデイングすることにより半導体装置
の信頼性を著しく向上させることができ、この結
果半導体装置の製造にあたつてコストダウンを図
ることができる。 As explained above, according to the present invention, a metal ball is formed that is limited to a standard value, and by wire bonding using this metal ball, the reliability of a semiconductor device can be significantly improved, and as a result, the semiconductor device It is possible to reduce costs in manufacturing.

なお、本発明は前記実施例に限定されるべきも
のではなく、キヤピラリの下降速度を検出してキ
ヤピラリ駆動手段にフイードバツクすればキヤピ
ラリの下降速度を制御することもできる。また、
２次元イメージセンサの代りにITVカメラ、レー
ザ光線等も用いることができる。 It should be noted that the present invention is not limited to the above-mentioned embodiment, and the descending speed of the capillary can also be controlled by detecting the descending speed of the capillary and providing feedback to the capillary driving means. Also,
ITV cameras, laser beams, etc. can also be used instead of the two-dimensional image sensor.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、従来のワイヤボンデイング装置の一
部を示す線図、第２図は、本発明の一実施例の一
部を示す線図、第３図は本実施例の検知手段の検
知方法を説明するためイメージセンサの検出エリ
ア正面図である。 ３…金属細線、６…金属ボール、７…検出手
段、１１…処理手段。 Fig. 1 is a diagram showing a part of a conventional wire bonding device, Fig. 2 is a diagram showing a part of an embodiment of the present invention, and Fig. 3 is a detection method of the detection means of the present embodiment. FIG. 2 is a front view of a detection area of an image sensor for explaining the image sensor. 3... Metal thin wire, 6... Metal ball, 7... Detection means, 11... Processing means.

Claims (1)

【特許請求の範囲】[Claims] １ 半導体素子の電極と半導体素子載置台の電極
とを溶断により金属ボールを形成した金属細線を
用いて接続するワイヤボンデイング装置に置い
て、前記ボールの外径および前記ボールの金属細
線からの偏心量を検出する検出手段を備え、前記
ボールの外径および前記偏心量が所定の許容規格
値を外れた場合、再度金属ボールを形成し直すこ
とを特徴とするワイヤボンデイング装置。1 Placed in a wire bonding device that connects the electrode of a semiconductor element and the electrode of a semiconductor element mounting table using a thin metal wire formed into a metal ball by fusing, the outer diameter of the ball and the amount of eccentricity of the ball from the thin metal wire are measured. 1. A wire bonding apparatus comprising: a detection means for detecting a metal ball, and the metal ball is re-formed when the outer diameter of the ball and the eccentricity exceed predetermined allowable standard values.
JP3399180A 1980-03-19 1980-03-19 Wire bonding device Granted JPS56131938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3399180A JPS56131938A (en) 1980-03-19 1980-03-19 Wire bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3399180A JPS56131938A (en) 1980-03-19 1980-03-19 Wire bonding device

Publications (2)

Publication Number Publication Date
JPS56131938A JPS56131938A (en) 1981-10-15
JPS6111464B2 true JPS6111464B2 (en) 1986-04-03

Family

ID=12401940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3399180A Granted JPS56131938A (en) 1980-03-19 1980-03-19 Wire bonding device

Country Status (1)

Country Link
JP (1) JPS56131938A (en)

Also Published As

Publication number Publication date
JPS56131938A (en) 1981-10-15

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