JPS6116345B2 - - Google Patents
Info
- Publication number
- JPS6116345B2 JPS6116345B2 JP3718282A JP3718282A JPS6116345B2 JP S6116345 B2 JPS6116345 B2 JP S6116345B2 JP 3718282 A JP3718282 A JP 3718282A JP 3718282 A JP3718282 A JP 3718282A JP S6116345 B2 JPS6116345 B2 JP S6116345B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- metal plate
- melting point
- metal
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 14
- 239000007769 metal material Substances 0.000 claims description 11
- 238000005477 sputtering target Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は、低融点金属スパツタリング・ターゲ
ツトの固定方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for securing a low melting point metal sputtering target.
周知のように、集積回路等の製造工程において
は、基板上に導電膜や絶縁膜を形成するに当つて
スパツタ法といわれる薄膜形成技術が用いられて
いる。このスパツタ法は、簡単に説明すると、第
１図に示すようのアルゴンガスなどの不活性ガス
雰囲気にした真空容器１のなかに、形成すべき薄
膜の種類（絶縁膜、導電膜など）に応じた材料の
ターゲツト２と、薄膜が形成される基板３を載せ
た陽電極４とを対向配置した上、これらのターゲ
ツト２と陽電極４との間に直流高電圧或は高周波
高電圧を印加し、アルゴンイオン５をターゲツト
２に衝突させ、このターゲツト２から薄膜を形成
する基となる粒子６を放出させ、この粒子６を基
板３の表面に付着させることにより薄膜を形成す
るものである。 As is well known, in the manufacturing process of integrated circuits and the like, a thin film forming technique called a sputtering method is used to form a conductive film or an insulating film on a substrate. To explain briefly, this sputtering method is performed in a vacuum container 1 containing an inert gas atmosphere such as argon gas as shown in FIG. A target 2 made of the same material and a positive electrode 4 carrying a substrate 3 on which a thin film is to be formed are placed facing each other, and a high direct current voltage or high frequency high voltage is applied between the target 2 and the positive electrode 4. A thin film is formed by colliding argon ions 5 with a target 2, ejecting particles 6 from the target 2, and depositing the particles 6 on the surface of a substrate 3.
この場合、ターゲツト２は銅などの金属板７を
接着してこの金属板７を介して電圧が印加され
る。そしてこの金属板７はスパツタリング中にタ
ーゲツト２に発生する熱を放熱するために冷却水
などによつて冷却される。 In this case, a metal plate 7 made of copper or the like is adhered to the target 2, and a voltage is applied through this metal plate 7. The metal plate 7 is cooled with cooling water or the like in order to radiate the heat generated in the target 2 during sputtering.
従来のスパツタ法においては、ターゲツト２の
金属材料と金属板７との固定（接着）を有機接着
材を用いるか、またはターゲツト金属材料と金属
板とを相互に拡散させる方法が用いられている。
しかし前者の場合には真空容器の中でガスが発生
し薄膜の純度が低下するという問題があつた。ま
た後者の場合には、高温に保たれた金属板７の表
面に溶融状態にあるターゲツト金属材料を接触さ
せ、所定時間この高温状態を維持することにより
金属板７の金属をターゲツト材料中に拡散させて
拡散層を形成し、この拡散層によつて両金属を結
合する。従つて溶融状態のターゲツト２内へ金属
板７の材料が多量に拡散し、ターゲツト２全体の
純度が低下するため、スパツタにより得た薄膜の
純度も低下するという問題があつつた。 In the conventional sputtering method, the metal material of the target 2 and the metal plate 7 are fixed (adhered) using an organic adhesive, or the target metal material and the metal plate are mutually diffused.
However, in the former case, there was a problem that gas was generated in the vacuum container and the purity of the thin film was reduced. In the latter case, the target metal material in a molten state is brought into contact with the surface of the metal plate 7 kept at a high temperature, and the metal of the metal plate 7 is diffused into the target material by maintaining this high temperature state for a predetermined period of time. A diffusion layer is formed, and both metals are bonded by this diffusion layer. Therefore, a large amount of the material of the metal plate 7 diffuses into the molten target 2, reducing the purity of the target 2 as a whole, resulting in a problem that the purity of the thin film obtained by sputtering also decreases.
なお後者の場合、ターゲツト２の金属板７との
結合を真空中で行うのが好ましいが、大気中で行
う場合にはターゲツト固着前の金属板７表面に酸
化膜が容易に形成される。このため金属板７の表
面から酸化膜を除去して拡散面を作りだす作業が
必要になつていいた。 In the latter case, it is preferable to bond the target 2 to the metal plate 7 in a vacuum, but if it is done in the atmosphere, an oxide film is easily formed on the surface of the metal plate 7 before the target is fixed. Therefore, it became necessary to remove the oxide film from the surface of the metal plate 7 to create a diffusion surface.
なお高融点金属材をスパツタリング・ターゲツ
トにする場合には、ターゲツト２と金属板７とを
ハンダで接着することもできる。しかしハンダ程
度またはそれ以下の融点を有する低融点金属材を
ターゲツトにする場合には、ハンダがターゲツト
を溶融してハンダがターゲツト内に拡散する。こ
のため不純物となるハンダを用いることはできな
かつた。 Note that when a high melting point metal material is used as the sputtering target, the target 2 and the metal plate 7 can be bonded together with solder. However, when a low melting point metal material having a melting point equal to or lower than that of solder is used as a target, the solder melts the target and the solder diffuses into the target. For this reason, it was not possible to use solder, which would be an impurity.
本発明はこのような欠点に鑑みなされたもの
で、その目的はターゲツトの純度を高純度に保ち
結果的に高純度の薄膜を形成し得るようにした低
融点金属スパツタリング・ターゲツトの固定方法
を提供することにある。 The present invention has been made in view of these drawbacks, and its purpose is to provide a method for fixing a low melting point metal sputtering target that can maintain the purity of the target and form a highly pure thin film as a result. It's about doing.
本発明によればこの目的は、低融点金属材から
なるスパツタリング・ターゲツトを固定すべき金
属板に凸部状又は凹部状の係止部を形成し、前記
スパツタリング・ターゲツトを非溶融状態で金属
板に押圧して塑成変形させ前記係止部に係止する
ことを特徴とする低融点金属スパツタリング・タ
ーゲツトの固定方法により達成される。 According to the present invention, this purpose is to form a convex or concave locking part on a metal plate to which a sputtering target made of a low-melting metal material is to be fixed, and to fix the sputtering target in an unmolten state to the metal plate. This is achieved by a method of fixing a low-melting point metal sputtering target, which is characterized in that it is pressed to plastically deform and locked in the locking portion.
第２図ａは本発明を適用した金属板７の構造の
一例を示す斜視図であつて、その上面には同図ｂ
の断面図に示すように深さ方向に向つて幅が広が
る凹部８と、これと逆の形状の凸部９とが多数形
成されている。金属板７には例えば銅板が使用さ
れ、またターゲツト２には低融点金属材料、例え
ば錫、錫合金、鉛、カドミウム、亜鉛等や、ハン
ダより低融点のインジウム合金などが使用され
る。このような金属板７にターゲツト２を固定す
る場合には、金属板７を僅かに加熱する一方、溶
融温度未満で非溶融状態にあるターゲツト２を金
属板７の表面に押圧する。適当な時間、適当な圧
力で押圧することによりターゲツト２は次第に塑
性変形してゆき凹部８内へ流入して行く。この結
果ターゲツト２と金属板７とは、凹部８と突部９
とで互いに咬合した状態で結合される。また金属
板７の表面温度が低くしかもターゲツト２は溶融
することがないので、金属板７はターゲツト２内
へほとんど拡散せず、ターゲツト２の純度を高く
保つことができる。 FIG. 2a is a perspective view showing an example of the structure of the metal plate 7 to which the present invention is applied;
As shown in the cross-sectional view, a large number of recesses 8 whose width increases in the depth direction and protrusions 9 having the opposite shape are formed. For example, a copper plate is used for the metal plate 7, and a low melting point metal material such as tin, tin alloy, lead, cadmium, zinc, etc., or an indium alloy having a lower melting point than solder is used for the target 2. When fixing the target 2 to such a metal plate 7, the metal plate 7 is heated slightly, while the target 2, which is in an unmolten state below the melting temperature, is pressed onto the surface of the metal plate 7. By pressing with an appropriate pressure for an appropriate time, the target 2 is gradually plastically deformed and flows into the recess 8. As a result, the target 2 and the metal plate 7 are separated by the recess 8 and the protrusion 9.
and are joined in a mutually interlocking state. Further, since the surface temperature of the metal plate 7 is low and the target 2 does not melt, the metal plate 7 hardly diffuses into the target 2, and the purity of the target 2 can be maintained at a high level.
この実施例では、凹凸状の係止部を多数設けた
ので、ターゲツト２と金属板７との接触面積が増
大し、ターゲツト２の放熱性が向上する。またタ
ーゲツト２を凝固させる際には、金属板７の熱膨
張係数がターゲツト２の熱膨張係数よりも通常大
きいので、冷却時における両者の結合力が強くな
り、ターゲツト２の固定が一層確実になる。 In this embodiment, since a large number of uneven locking portions are provided, the contact area between the target 2 and the metal plate 7 is increased, and the heat dissipation of the target 2 is improved. Furthermore, when solidifying the target 2, since the coefficient of thermal expansion of the metal plate 7 is usually larger than that of the target 2, the bonding force between the two becomes stronger during cooling, and the fixation of the target 2 becomes more secure. .
なおターゲツト２の固定を大気中で行う場合に
は、金属板７の表面に酸化膜ができるが、この酸
化膜を除去することなくターゲツト２を押圧すれ
ば、この酸化膜により金属板７の拡散が防げられ
るので、ターゲツト２の純度は一層向上する。酸
化膜に代えて、メツキ層を金属板７の表面に形成
しておいても、同様の効果が得られる。 Note that when fixing the target 2 in the atmosphere, an oxide film is formed on the surface of the metal plate 7, but if the target 2 is pressed without removing this oxide film, this oxide film will prevent the diffusion of the metal plate 7. Since this can be prevented, the purity of Target 2 is further improved. Similar effects can be obtained by forming a plating layer on the surface of the metal plate 7 instead of the oxide film.
押圧するターゲツト２の温度と、押圧圧力と、
押圧時間とは、使用する低融点金属材の種類によ
つて異なるが、一般には溶融温度より10〜90℃低
い温度で、10Kg/cm2〜数トン／cm2程度の圧力で１
時間程度押圧することにより十分な結合力が得ら
れる。 The temperature of the target 2 to be pressed, the pressing pressure,
Pressing time varies depending on the type of low-melting metal material used, but generally it is applied at a temperature 10 to 90°C lower than the melting temperature and at a pressure of about 10 kg/cm 2 to several tons/cm 2 .
Sufficient bonding force can be obtained by pressing for about a period of time.
なお、ターゲツト２と金属板７との係止構造は
第２図ｃに示すものに限らず、第３図に示すよう
に、金属板７にねじ１０を突設しておきこのねじ
１０を包み込むように係止するもの、或はねじ穴
１１を埋設してこれに係止するもの、または金属
板７に鉤状の金具１２を突設しておきこれを覆う
ように係止する構造などでも良い。要するに、低
融点金属材料からなるターゲツト２を溶融温度未
満の温度で非溶融状態のままで金属板７の表面に
押圧し、ターゲツト２を塑性変形させて機械的に
金属板７に固着する構造であればよい。 Note that the locking structure between the target 2 and the metal plate 7 is not limited to the one shown in FIG. 2c. As shown in FIG. It can be locked like this, or it can be locked with a screw hole 11 embedded in it, or it can be locked with a hook-shaped metal fitting 12 protruding from the metal plate 7 so as to cover it. good. In short, the target 2 made of a low melting point metal material is pressed against the surface of the metal plate 7 in an unmolten state at a temperature below the melting temperature, and the target 2 is plastically deformed and mechanically fixed to the metal plate 7. Good to have.
以上説明したように、本発明は金属板に所定の
係止部を形成し、この係止部に低融点金属材料か
らなるスパツタリング・ターゲツトを溶融温度に
達しない温度の非溶融状態に保つたままで押圧す
ることにより、両者を機械的に固定するものであ
る。すなわち金属板とターゲツトとの間に拡散層
を作つてターゲツトを固定するものではないの
で、ターゲツトの純度を高純度に維持することが
でき、結果的に高純度の薄膜を形成することがで
きる。またターゲツトは金属板との密着性が良い
ので、スパツタリング中にターゲツトに発生する
熱を金属板を介して能率よく放熱することができ
る。 As explained above, the present invention forms a predetermined locking portion on a metal plate, and holds a sputtering target made of a low-melting metal material in this locking portion in a non-molten state at a temperature below the melting temperature. By pressing, the two are mechanically fixed. That is, since the target is not fixed by creating a diffusion layer between the metal plate and the target, the purity of the target can be maintained at a high level, and as a result, a highly pure thin film can be formed. Furthermore, since the target has good adhesion to the metal plate, the heat generated in the target during sputtering can be efficiently radiated through the metal plate.
第１図はスパツタ法の原理を説明するための
図、第２図は本発明の一実施例を示す図、第３図
は本発明の他の実施例を示す図である。
２……ターゲツト、７……金属板、８……凹
部、９……凸部、１０……ねじ、１１……ねじ
穴、１２……金具。
FIG. 1 is a diagram for explaining the principle of the sputtering method, FIG. 2 is a diagram showing one embodiment of the present invention, and FIG. 3 is a diagram showing another embodiment of the present invention. 2... Target, 7... Metal plate, 8... Concave portion, 9... Convex portion, 10... Screw, 11... Screw hole, 12... Metal fitting.
Claims (1)
ゲツトを固定すべき金属板に凸部状又は凹部状の
係止部を形成し、前記スパツタリング・ターゲツ
トを非溶融状態で金属板に押圧して塑成変形させ
前記係止部に係止することを特徴とする低融点金
属スパツタリング・ターゲツトの固定方法。1 Forming a convex or concave locking part on a metal plate to which a sputtering target made of a low-melting point metal material is to be fixed, and pressing the sputtering target against the metal plate in an unmolten state to plastically deform it. A method for fixing a low melting point metal sputtering target, the method comprising the step of fixing a sputtering target using a low melting point metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3718282A JPS58157968A (en) | 1982-03-11 | 1982-03-11 | Construction for fixing of sputtering target of low melting point metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3718282A JPS58157968A (en) | 1982-03-11 | 1982-03-11 | Construction for fixing of sputtering target of low melting point metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58157968A JPS58157968A (en) | 1983-09-20 |
| JPS6116345B2 true JPS6116345B2 (en) | 1986-04-30 |
Family
ID=12490440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3718282A Granted JPS58157968A (en) | 1982-03-11 | 1982-03-11 | Construction for fixing of sputtering target of low melting point metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58157968A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0276962A1 (en) * | 1987-01-27 | 1988-08-03 | Machine Technology Inc. | Cooling device for a sputter target and source |
| JPH062217Y2 (en) * | 1989-05-10 | 1994-01-19 | 湯浅電池株式会社 | Lead acid battery terminal |
| DE19535894A1 (en) * | 1995-09-27 | 1997-04-03 | Leybold Materials Gmbh | Target for the sputter cathode of a vacuum coating system and process for its production |
| KR100642034B1 (en) * | 1998-09-11 | 2006-11-03 | 토소우 에스엠디, 인크 | Low temperature sputter target bonding method and target assembly manufactured by this method |
-
1982
- 1982-03-11 JP JP3718282A patent/JPS58157968A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58157968A (en) | 1983-09-20 |
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