JPS6116492B2 - - Google Patents
Info
- Publication number
- JPS6116492B2 JPS6116492B2 JP58151076A JP15107683A JPS6116492B2 JP S6116492 B2 JPS6116492 B2 JP S6116492B2 JP 58151076 A JP58151076 A JP 58151076A JP 15107683 A JP15107683 A JP 15107683A JP S6116492 B2 JPS6116492 B2 JP S6116492B2
- Authority
- JP
- Japan
- Prior art keywords
- dry etching
- gas
- pump
- rotary pump
- exhaust system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001312 dry etching Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 17
- 239000003463 adsorbent Substances 0.000 claims description 5
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 19
- 238000001179 sorption measurement Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000003517 fume Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002808 molecular sieve Substances 0.000 description 2
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 235000013162 Cocos nucifera Nutrition 0.000 description 1
- 244000060011 Cocos nucifera Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000010903 husk Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Landscapes
- Treating Waste Gases (AREA)
- Separation Of Gases By Adsorption (AREA)
Description
【発明の詳細な説明】
本発明は主としてアルミニウムのドライエツチ
ングに使用される三塩化ほう素のドライエツチン
グ排ガスの処理方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for treating exhaust gas from dry etching of boron trichloride, which is mainly used for dry etching of aluminum.
近年、集積回路の微細化の要求は高まるばかり
で、そのエツチング工程はドライエツチング化の
方向にある。半導体素子の配線として用いられる
アルミニウムのエツチングも、燐酸、硝酸、酢酸
混合液等によるウエツトエツチングから、三塩化
ほう素（BC３）を主体としたガスのプラズマ
によるドライエツチングが用いられるようになつ
た。 In recent years, the demand for miniaturization of integrated circuits has been increasing, and the etching process is moving toward dry etching. Etching of aluminum, which is used as wiring for semiconductor devices, has changed from wet etching using a mixture of phosphoric acid, nitric acid, and acetic acid to dry etching using plasma containing a gas mainly containing boron trichloride ( BC3 ). Ta.
上記BC３を塩素の供給源として用いると、
ハロゲン化カーボンガスを用いた場合に起る重合
膜のような膜の発生は認められず、またBC３
はエツチングを妨害するＡ酸化物の還元剤とし
ても有効で、さらに微量の水分を除去する等優れ
た性質を有すが、一方エツチング速度が遅い欠点
があつた。しかし、BC３とCC４またはＣ
２との混合ガスを用いてドライエツチングする方
法が開発され、上記欠点が解消された。 When the above BC 3 is used as a source of chlorine,
The formation of a polymer film that occurs when using halogenated carbon gas was not observed, and BC 3
Although it is effective as a reducing agent for the A oxide that interferes with etching and has excellent properties such as removing trace amounts of water, it has the disadvantage of slow etching speed. But BC 3 and CC 4 or C
A method of dry etching using a gas mixture of 2 and 2 was developed, and the above drawbacks were solved.
ところで、BC３を用いてドライエツチング
を行なうと、往往にしてドライエツチング室に接
続された、拡散ポンプ或はメカニカルブースタポ
ンプとロータリポンプとを直列に配置した排気
系、特にロータリポンプの出口ラインが詰り、真
空度の安定性が阻害される事故が発生した。 By the way, when dry etching is performed using BC 3 , the exhaust system connected to the dry etching chamber, which consists of a diffusion pump or a mechanical booster pump and a rotary pump arranged in series, especially the outlet line of the rotary pump, is An accident occurred where the vacuum became clogged and the stability of the vacuum level was affected.
本発明者等は、上記の問題を解決すべく、鋭意
研究した結果、ガス中のBC３は水分が存在す
ると、
BC３＋3H2O→H3BO3＋3HC
の化学式に示すように加水分解して、H3BO3のフ
ユームを生じ、このフユームは付着し易く、容易
には水、アルカリ等の液体によつて捕集されない
ことを知見するとともに、微量の外気が吸引され
て系内に洩れ込み、その含有する水分によつて
H3BO3が発生し、詰りを生ずるものと推定した。
この推定に基づいて外気洩れの発生しそうな場所
を探索した結果、上記ロータリポンプの回転軸シ
ール部が微量の外気を吸込む可能のあることが判
明した。 In order to solve the above problem, the present inventors conducted intensive research and found that when moisture is present, BC 3 in gas is hydrolyzed as shown in the chemical formula: BC 3 +3H 2 O→H 3 BO 3 +3HC. It was discovered that H 3 BO 3 fumes were generated, and that these fumes easily adhered and were not easily collected by liquids such as water or alkali, and that small amounts of outside air were sucked in and leaked into the system. depending on the moisture content
It was assumed that H 3 BO 3 was generated and caused clogging.
As a result of searching for locations where outside air leaks are likely to occur based on this estimation, it was found that the rotary shaft seal portion of the rotary pump may suck in a small amount of outside air.
そのため、この部分の洩れを完全に防止すべ
く、種々な方法を検討、実施したが排気系の詰り
を防止することは出来なかつた。そこで、ロータ
リポンプに近接した出口ラインに並列にフイルタ
を設置し、交互に使用して発生するH3BO3フユー
ムの除去をこころみ、排気系の詰りを防止するこ
とが出来た。しかし、この方法はフイルタの圧損
失が大きく、大きな動力を必要とするので経済性
に劣り、さらにフイルタの交換頻度が多く、実用
的な方法でなかつた。 Therefore, in order to completely prevent leakage from this part, various methods have been studied and implemented, but it has not been possible to prevent clogging of the exhaust system. Therefore, we installed filters in parallel on the outlet line close to the rotary pump and used them alternately to remove the generated H 3 BO 3 fumes and were able to prevent clogging of the exhaust system. However, this method has a large pressure loss in the filter and requires a large amount of power, so it is not economical, and the filter has to be replaced frequently, so it is not a practical method.
本発明は上記の事情に鑑み、容易に水分の洩れ
込みが防止され、ドライエツチング室の真空度の
安定性を保ち、かつBC３が外部に排出されな
い方法を提供することを目的とするもので、その
要旨は、BC３を用いるドライエツチング排ガ
スの処理方法において、排気系の、回転軸を有す
る真空ポンプを乾燥ガス雰囲気中に保持し、かつ
上記ポンプの排気ガスをBC３の吸着剤を通し
て排出するドライエツチング排ガスの処理方法に
ある。 In view of the above circumstances, it is an object of the present invention to provide a method that easily prevents moisture leakage, maintains the stability of the vacuum level in the dry etching chamber, and prevents BC 3 from being discharged to the outside. , the gist of which is that, in a method for treating dry etching exhaust gas using BC 3 , a vacuum pump with a rotating shaft in the exhaust system is held in a dry gas atmosphere, and the exhaust gas from the pump is exhausted through the adsorbent of BC 3 . There is a method for treating dry etching exhaust gas.
以下本発明の方法を図面を参照して説明する。 The method of the present invention will be explained below with reference to the drawings.
図面は、本発明の方法を実施する装置の一例を
示すもので、図中符号１はドライエツチング室で
ある。ドライエツチング室１は、拡散ポンプまた
はメカニカルブースタポンプ２と、ロータリポン
プ３とが直列に配置された排気系４によつて高真
空に保持されている。このロータリポンプ３の出
口ライン３ａにはBC３の吸着剤が充填されて
いる吸着塔５が並列に設けられ交互に切換え使用
出来るようになつている。上記吸着剤としては、
通常、活性炭、モレキユラシーブ４Ａ，５Ａ，１
３Ｘ、天然ゼオライト等が用いられる。 The drawing shows an example of an apparatus for carrying out the method of the present invention, and reference numeral 1 in the drawing indicates a dry etching chamber. The dry etching chamber 1 is maintained at a high vacuum by an exhaust system 4 in which a diffusion pump or mechanical booster pump 2 and a rotary pump 3 are arranged in series. In the outlet line 3a of the rotary pump 3, adsorption towers 5 filled with adsorbent BC3 are provided in parallel so that they can be switched and used alternately. As the above adsorbent,
Usually activated carbon, molecular sieve 4A, 5A, 1
3X, natural zeolite, etc. are used.
また、上記ロータリポンプ３のケーシング３ｂ
には、完全に乾燥され、油、BC３、CC４ま
たはＣ２に対して不活性な不燃性ガス（例えば
N2ガス）６の導入ライン６ａが接続され、ロー
タリポンプ３の回転軸受け部分が上記ガス雰囲気
中に保持されるように小量連続導入され、排気管
６ｂより放出されている。 In addition, the casing 3b of the rotary pump 3
A completely dry, non-flammable gas inert to oil, BC 3 , CC 4 or C 2 (e.g.
An introduction line 6a of N2 gas (N2 gas) 6 is connected, and a small amount of N2 gas is continuously introduced so that the rotary bearing part of the rotary pump 3 is maintained in the gas atmosphere, and is discharged from the exhaust pipe 6b.
本発明に係るドライエツチング装置は、上記の
ように構成されているので、ドライエツチング室
１に導入された、BC３、CC４またはＣ２
は排気系４より吸引排出されるが、ロータリポン
プ３より洩れ込む外気は、完全に乾燥されてお
り、かつBC３、CC４またはＣ２等に対し
て不活性であるため、BC３は、H3BO3になる
ことなく、そのまま排出され、常圧に保持されて
いる吸着塔５において除去される。また上記吸着
塔５内の吸着剤はCC４、Ｃ２も吸着するの
で、これらの薬剤が外部に放出されることがな
い。 Since the dry etching apparatus according to the present invention is configured as described above, BC 3 , CC 4 or C 2 introduced into the dry etching chamber 1
is suctioned and discharged from the exhaust system 4, but the outside air leaking from the rotary pump 3 is completely dried and inert to BC 3 , CC 4 , C 2, etc., so BC 3 is It is discharged as it is without becoming H 3 BO 3 and removed in the adsorption tower 5 maintained at normal pressure. Furthermore, since the adsorbent in the adsorption tower 5 also adsorbs CC 4 and C 2 , these chemicals are not released to the outside.
なお、メカニカルシールブースタポンプは外気
の洩れ込みは認められなかつたが、回転軸を有す
るので、このポンプも乾燥ガス雰囲気に保持して
もよい。 Although no leakage of outside air was observed in the mechanical seal booster pump, since it has a rotating shaft, this pump may also be maintained in a dry gas atmosphere.
次に実施例および比較例を示して本発明の方法
を具体的に説明する。 Next, the method of the present invention will be specifically explained with reference to Examples and Comparative Examples.
実施例 １
日電アネルバ製1LD―4002ドライエツチング装
置を用い、ドライエツチング室にBC３、CC
４を標準状態（以下ガス量は標準状態で示す）で
それぞれ100c.c.／minで流し、圧力：10パスカル
（Ｐa）、RF電源電力：700Wとし、またロータリ
ポンプのケーシングにN2を20／hr流し、150mm
φ、の吸着塔にヤシガラ炭500mmＨ充填してＡ
のドライエツチングの連続運転を行なつた。その
結果ロータリポンプの出口の空気混合量は、
0.1vol％以下で、吸着塔出口におけるBC３、
CC４の濃度は、12時間にわたつて０を示し、
その後BC３が1ppm検出されたが、排気系のつ
まりは全くなかつた。さらに3hr運転した後、ロ
ータリーポンプ出口ラインの内面を調べたが
H3BO3の付着は殆ど認められなかつた。Example 1 Using a 1LD-4002 dry etching device manufactured by Nichiden Anelva, BC 3 and CC were placed in the dry etching chamber.
4 were flowed at a rate of 100 c.c./min under standard conditions (the gas amounts are shown below as standard conditions), the pressure was 10 Pascals ( Pa ), the RF power supply power was 700 W, and N 2 was added to the casing of the rotary pump. 20/hr sink, 150mm
Fill the adsorption tower of φ with 500mmH of coconut husk charcoal A
Continuous dry etching operation was carried out. As a result, the air mixture at the outlet of the rotary pump is
BC 3 at the adsorption tower outlet at 0.1 vol% or less,
The concentration of CC 4 showed 0 over 12 hours,
Afterwards, 1ppm of BC3 was detected, but the exhaust system was not clogged at all. After running for another 3 hours, I checked the inner surface of the rotary pump outlet line.
Almost no adhesion of H 3 BO 3 was observed.
実施例 ２
ドライエツチング室にBC３、Ｃ２ガスを
それぞれ、150c.c.／min、30c.c.／min導入し、吸着
塔にモレキユラシーブ１３Ｘを750mmＨ充填した
外は、実施例１と同じにしてＡのドライエツチ
ングを行なつた。その結果、ロータリポンプ出口
における空気混入量は0.1vol％以下であり、ま
た、吸着塔出口におけるBC３、Ｃ２の濃度
は20hrにわたつて０で、その後BC３が1ppm検
出されたが、排気系の詰りはなかつた。さらに
3hr運転した後、ロータリポンプ出口ラインの内
面を調べたがH3BO3の付着は殆ど認められなかつ
た。Example 2 The procedure was the same as in Example 1, except that BC 3 and C 2 gases were introduced into the dry etching chamber at 150 c.c./min and 30 c.c./min, respectively, and the adsorption tower was filled with molecular sieve 13X at 750 mmH. Dry etching of A was carried out. As a result, the amount of air mixed in at the rotary pump outlet was less than 0.1 vol%, and the concentration of BC 3 and C 2 at the adsorption tower outlet was 0 for 20 hours, after which 1 ppm of BC 3 was detected. There was no blockage in the system. moreover
After operating for 3 hours, the inner surface of the rotary pump outlet line was examined, but almost no H 3 BO 3 was observed.
比較例 １
実施例１と同じドライエツチング装置を用い、
BC３：170c.c.／min、CC４：110c.c.／min流
し、圧力：11.5Pa、RF電源電力：700WでＡの
ドライエツチングを行ない、排ガスをスプレイ方
式の水洗塔に導き600／hrのスプレイ水によつ
て洗浄した。運転開始後2hrで排気系に詰りの発
生が認められた。ただちに運転を中止し、ロータ
リポンプ出口ラインを調べたところ相当量の
H3BO3の付着が認められた。また、この間上記洗
浄塔により捕集されたBC３（H3BO3）は約５
％、CC４の除去率は１％であつた。Comparative Example 1 Using the same dry etching equipment as in Example 1,
BC 3 : 170c.c./min, CC 4 : 110c.c./min flow, pressure: 11.5Pa, RF power supply power: 700W to perform dry etching of A, and lead the exhaust gas to a spray type water washing tower at 600c.c./min. Washed with hr spray water. Clogging was observed in the exhaust system 2 hours after the start of operation. Immediately stopped operation and examined the rotary pump outlet line, which revealed a considerable amount of
Adhesion of H 3 BO 3 was observed. Also, during this period, the amount of BC 3 (H 3 BO 3 ) collected by the washing tower was approximately 5
%, and the removal rate of CC 4 was 1%.
以上述べたように、本発明の方法は、容易に排
気系のつまりおよびBC３、CC４またはＣ
２の外気放出を完全に防止することが出来るの
で、これら薬剤を使用するドライエツチングに、
極めて有効に使用出来る。 As described above, the method of the present invention easily eliminates clogging of the exhaust system and eliminates BC 3 , CC 4 or C
Since it is possible to completely prevent the release of outside air in step 2 , dry etching using these chemicals is
It can be used extremely effectively.
図面は本発明の方法を実施する装置フローの一
例を示す図である。
１……ドライエツチング室、２……拡散ポンプ
またはメカニカルブースタポンプ、３……ロータ
リポンプ、３ａ……出口ライン、３ｂ……ケーシ
ング、４……排気系、５……吸着塔、６……N2
ガス、６ａ……導入ライン、６ｂ……排出管。
The drawing is a diagram showing an example of the flow of an apparatus for carrying out the method of the present invention. 1...Dry etching chamber, 2...Diffusion pump or mechanical booster pump, 3...Rotary pump, 3a...Outlet line, 3b...Casing, 4...Exhaust system, 5...Adsorption tower, 6...N 2
Gas, 6a...introduction line, 6b...discharge pipe.
Claims (1)
スの処理方法において排気系の回転軸を有する真
空ポンプを乾燥ガス雰囲気中に保持し、かつ上記
ポンプの排気ガスを三塩化ほう素の吸着剤を通し
て排出することを特徴とするドライエツチング排
ガスの処理方法。1. In a dry etching exhaust gas treatment method using boron trichloride, a vacuum pump having a rotating shaft of the exhaust system is held in a dry gas atmosphere, and the exhaust gas of the pump is discharged through an adsorbent of boron trichloride. A method for treating dry etching exhaust gas characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151076A JPS6044025A (en) | 1983-08-19 | 1983-08-19 | Treatment of dry etching exhaust gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151076A JPS6044025A (en) | 1983-08-19 | 1983-08-19 | Treatment of dry etching exhaust gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6044025A JPS6044025A (en) | 1985-03-08 |
| JPS6116492B2 true JPS6116492B2 (en) | 1986-04-30 |
Family
ID=15510783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58151076A Granted JPS6044025A (en) | 1983-08-19 | 1983-08-19 | Treatment of dry etching exhaust gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6044025A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101514801B1 (en) * | 2013-06-25 | 2015-04-24 | (주)파인텍 | The separation and recycling system for a perfluoro compounds |
| CN109695891A (en) * | 2018-05-30 | 2019-04-30 | 中电华创(苏州)电力技术研究有限公司 | One kind dividing the rotary clarifier in storehouse and flue gas purification system |
-
1983
- 1983-08-19 JP JP58151076A patent/JPS6044025A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6044025A (en) | 1985-03-08 |
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