JPS6117627B2 - - Google Patents
Info
- Publication number
- JPS6117627B2 JPS6117627B2 JP52124503A JP12450377A JPS6117627B2 JP S6117627 B2 JPS6117627 B2 JP S6117627B2 JP 52124503 A JP52124503 A JP 52124503A JP 12450377 A JP12450377 A JP 12450377A JP S6117627 B2 JPS6117627 B2 JP S6117627B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- wafer holding
- holding plate
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005498 polishing Methods 0.000 claims description 30
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007665 sagging Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
【発明の詳細な説明】
本発明は、例えば半導体ウエハのようなウエハ
を、接着ワツクスを用いることなく、ウエハ保持
プレートに保持して鏡面研磨するワツクスレス研
磨機に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a waxless polishing machine for mirror polishing a wafer, such as a semiconductor wafer, by holding it on a wafer holding plate without using adhesive wax.
この種の従来のワツクスレス研磨機においては
ウエハ保持面は平坦面として構成されている。し
かるに、この平坦面にウエハを保持して研磨した
場合、ウエハの研磨量分布が不均一になる傾向の
あることが判つた。この研磨量の不均一は、ウエ
ハ周辺部の研磨量が中央部のそれよりも大きくな
るように生ずる傾向にあり、その結果、ウエハ周
辺部にダレを生じていた。このようなウエハがた
とえば半導体ウエハである場合、これを用いて半
導体デバイスを作ると、ウエハ周辺部に形成され
た素子は特性不良となつて歩留が低下する原因に
なる。 In this type of conventional waxless polishing machine, the wafer holding surface is constructed as a flat surface. However, it has been found that when a wafer is held and polished on this flat surface, the polishing amount distribution of the wafer tends to become non-uniform. This non-uniform polishing amount tends to occur such that the amount of polishing at the periphery of the wafer is greater than that at the center, resulting in sagging at the periphery of the wafer. If such a wafer is, for example, a semiconductor wafer, and a semiconductor device is manufactured using the wafer, elements formed around the wafer will have poor characteristics, causing a decrease in yield.
本発明の目的は、冒頭に述べた型のワツクスレ
ス研磨機を、ウエハの周辺部も中央部も均一に研
磨し得るように構成することである。 SUMMARY OF THE INVENTION It is an object of the present invention to construct a waxless polishing machine of the type mentioned at the outset in such a way that it can uniformly polish both the periphery and the center of a wafer.
この目的を達成するために本発明は、ウエハ保
持プレートのウエハ保持面の周辺部を凸曲面状に
形成したことを特徴とするものである。 In order to achieve this object, the present invention is characterized in that the peripheral portion of the wafer holding surface of the wafer holding plate is formed into a convex curved shape.
第１図および第２図は本発明によるワツクスレ
ス研磨機の一実施例を示すものである。１は研磨
盤駆動軸２によつて駆動される研磨盤であつて、
研磨面には研磨クロス３が貼着されている。研磨
盤１と対向するように、これよりも小径であつ
て、偏心位置でウエハ保持プレート駆動軸４に取
付けられたウエハ保持プレート５が配設されてい
る。ウエハ保持プレート５のウエハ保持面側には
ウエハ保持用リテーナ６が研磨盤１に向つて突設
されている。リテーナ６はバネ７の作用によりウ
エハ得持プレート５からの突出長さが、研磨盤１
とウエハ保持プレート５との間の間隔に応じて自
動的に変わり得るようになつている。ウエハ保持
プレート５は研磨盤１が矢印Ａ方向に回転するの
に応じて矢印Ｂ方向に回転する。 1 and 2 show an embodiment of a waxless polishing machine according to the present invention. 1 is a polishing disc driven by a polishing disc drive shaft 2,
A polishing cloth 3 is attached to the polishing surface. A wafer holding plate 5, which has a smaller diameter than the polishing plate 1 and is attached to the wafer holding plate drive shaft 4 at an eccentric position, is disposed so as to face the polishing plate 1. A wafer holding retainer 6 is provided on the wafer holding surface side of the wafer holding plate 5 so as to protrude toward the polishing plate 1 . The length of the retainer 6 protruding from the wafer holding plate 5 is adjusted by the action of the spring 7 from the polishing plate 1.
The distance between the wafer holding plate 5 and the wafer holding plate 5 can be changed automatically. The wafer holding plate 5 rotates in the direction of arrow B as the polishing disk 1 rotates in the direction of arrow A.
リテーナ６の内側に、研磨盤１に対向するよう
に、パツド８を介して被研磨ウエハ９が保持され
る。研磨工程に際して被研磨ウエハ９の研磨面に
研磨剤Ｐが供給される。 A wafer to be polished 9 is held inside the retainer 6 via a pad 8 so as to face the polishing disk 1 . During the polishing process, a polishing agent P is supplied to the polishing surface of the wafer 9 to be polished.
さて、本発明による研磨機の特徴はウエハ保持
プレート５のウエハ保持面にある。すなわち、第
２図からよく判るように、ウエハ保持プレート５
のウエハ保持面周辺部５ａは凸曲面状に形成され
ている。この凸曲面の形状寸法は従来欠点となつ
ていたダレ量に対応して決定しなければならない
が、実験結果によれば、一例としてウエハ保持面
に配置するパツド８の厚さを300μｍ、シリコ
ン・ウエハの鏡面研磨量を30μｍとした場合、凸
面量Ｄ（第２図参照）は約15μｍが適当であつ
た。 Now, the feature of the polishing machine according to the present invention lies in the wafer holding surface of the wafer holding plate 5. That is, as can be clearly seen from FIG. 2, the wafer holding plate 5
The peripheral portion 5a of the wafer holding surface is formed into a convex curved shape. The shape and dimensions of this convex curved surface must be determined in accordance with the amount of sagging, which has traditionally been a drawback, but according to experimental results, as an example, the thickness of the pad 8 placed on the wafer holding surface is 300 μm, and silicon When the mirror polishing amount of the wafer was 30 μm, the appropriate convexity D (see FIG. 2) was about 15 μm.
以上説明したウエハ保持プレートを用いれば、
ウエハの鏡面研磨時にダレ量が拡大することは無
くなり、研磨前の平面精度を十分維持できるよう
になる。 If you use the wafer holding plate explained above,
The amount of sag does not increase during mirror polishing of a wafer, and the flatness accuracy before polishing can be maintained sufficiently.
被研磨ウエハのダレが改善されることにより、
たとえば半導体デバイスの製造におけるウエハ周
辺部の歩留が向上する。特に超高密度・微細パタ
ーン化するメモリ素子製造においては、ウエハの
全域が平滑平坦面であることが要求されており、
本発明の効果は大である。 By improving the sagging of the wafer to be polished,
For example, the yield of the wafer periphery in the manufacture of semiconductor devices is improved. In particular, in the manufacturing of memory elements that require ultra-high density and fine patterning, the entire wafer is required to have a smooth and flat surface.
The effects of the present invention are significant.
第１図は本発明の一実施例によるワツクスレス
研磨機の要部を示す縦断面図、第２図は第１図の
研磨機におけるウエハ保持プレートの拡大断面図
である。
１……研磨盤、３……研磨クロス、５……ウエ
ハ保持プレート、５ａ……同プレート周辺部、６
……リテーナ、８……パツド、９……ウエハ。
FIG. 1 is a longitudinal sectional view showing essential parts of a waxless polishing machine according to an embodiment of the present invention, and FIG. 2 is an enlarged sectional view of a wafer holding plate in the polishing machine of FIG. DESCRIPTION OF SYMBOLS 1... Polishing disk, 3... Polishing cloth, 5... Wafer holding plate, 5a... Peripheral part of the same plate, 6
...retainer, 8...pad, 9...wafer.
Claims (1)
ことなく、ウエハ保持プレートに保持してその表
面を平坦面に鏡面研磨するワツクスレス研磨機に
おいて、前記ウエハの裏面に当接するウエハ保持
プレートのウエハ保持面の周辺部を、中心部に対
して凹んだ状態でかつ凸曲面状に形成して、研磨
盤に対するウエハ表面の周辺部の押圧力を中心部
における押圧力よりも低減されるように構成した
ことを特徴とするワツクスレス研磨機。1. In a waxless polisher that holds a circular plate-shaped wafer on a wafer holding plate and polishes its surface to a flat surface without using adhesive wax, the wafer holding surface of the wafer holding plate that comes into contact with the back surface of the wafer The periphery of the wafer is formed in a concave and convex shape with respect to the center, so that the pressing force of the wafer surface against the polishing disk at the periphery is lower than that at the center. A waxless polishing machine featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12450377A JPS5458294A (en) | 1977-10-19 | 1977-10-19 | Waxless polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12450377A JPS5458294A (en) | 1977-10-19 | 1977-10-19 | Waxless polishing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5458294A JPS5458294A (en) | 1979-05-10 |
| JPS6117627B2 true JPS6117627B2 (en) | 1986-05-08 |
Family
ID=14887093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12450377A Granted JPS5458294A (en) | 1977-10-19 | 1977-10-19 | Waxless polishing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5458294A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56146667A (en) * | 1980-04-18 | 1981-11-14 | Hitachi Ltd | Mirror surface grinder |
| JPS56157036A (en) * | 1980-05-09 | 1981-12-04 | Nec Corp | Simultaneous working of both faces of wafer |
| JP2849533B2 (en) * | 1993-08-18 | 1999-01-20 | 長野電子工業株式会社 | Wafer polishing method |
| JP3158934B2 (en) * | 1995-02-28 | 2001-04-23 | 三菱マテリアル株式会社 | Wafer polishing equipment |
-
1977
- 1977-10-19 JP JP12450377A patent/JPS5458294A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5458294A (en) | 1979-05-10 |
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