JPS6120166B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microwave semiconductor oscillator using a dielectric resonator as a feedback circuit, and particularly to a drain electrode transmission line and a gate electrode transmission line for positioning the dielectric resonator. This invention relates to a microwave semiconductor oscillator partially provided with a glass coating section.

FIG. 1 is a plan view showing an example of a conventional microwave semiconductor oscillator of this type, and FIG. 2 is a sectional view of the vicinity of a dielectric resonator arrangement section.

In these figures, 1 is a microwave band, and substrates 1, 2, 3, and 4 for microwave integrated circuits are made of low dielectric loss materials such as alumina and fluororesin, and are made of conductors such as silver-palladium by printing and firing. A drain electrode transmission line, a gate electrode transmission line, and a source electrode transmission line are each made of a solder-dipped microstrip line; and a field effect transistor (hereinafter referred to as FET) connected to 4, and 6 electromagnetically coupled between a drain electrode transmission line 2 and a gate electrode transmission line 3 connected correspondingly to the drain electrode D and gate electrode G of the FET 5. This is a dielectric resonator made of titanium oxide or the like arranged in this manner. The optimum position of this dielectric resonator 6 is determined experimentally and fixed with adhesive. Note that this optimal position is usually a position that is about 1/4 of the width of the transmission line.

In such a microwave semiconductor oscillator, the positioning of the dielectric resonator 6 is very important, and a slight positional deviation may cause oscillation to stop or an unnecessary mode to oscillate. Furthermore, as shown in Fig. 2, since the transmission line has a bulge of about 100μ or more due to the solder dip, there is a large difference in height from the top surface of the substrate 1, and when the dielectric resonator 6 is fixed with adhesive. had poor adhesion and deteriorated reliability.

The present invention has been made in view of the above points, and includes providing a glass coating part on a part of the drain electrode transmission line and the gate electrode transmission line to facilitate the positioning of the dielectric resonator and to make the dielectric resonance This is intended to improve reliability by improving adhesion when the device is fixed with adhesive. This invention will be explained below.

Fig. 3 is a plan view showing an embodiment of the present invention, Fig. 4 is a plan view with the dielectric resonator removed from Fig. 3 to make the glass coat part easier to understand, and Fig. 5 is a plan view of the dielectric resonator. FIG. 3 is a cross-sectional view of the vicinity of the arrangement section.

In these figures, the same reference numerals as in FIGS. 1 and 2 indicate the same parts, and 7 and 8 are glass coated parts whose optimum positions were determined experimentally and which were formed by printing and firing. The glass coating parts 7 and 8 are formed by printing a paste made by mixing glass grains in a solvent onto the necessary parts of the transmission line, and baking the paste at a temperature of about 1000° C. for several hours. In this embodiment, when the substrate 1 is solder-dipped, the solder does not adhere to the glass coated parts 7 and 8. Therefore, since these glass coat parts 7 and 8 can be used for positioning the dielectric resonator 6, the dielectric resonator 6 can be easily arranged at an optimal position. In addition, since the height of this part is about 15μ or less even including the thickness of the glass coat, there is little difference in height from the top surface of the substrate 1, and when the dielectric resonator 6 is fixed with adhesive, performance and reliability.

As explained above, in the microwave semiconductor oscillator of the present invention, a glass coating portion is provided on a part of the drain electrode transmission line and the gate electrode transmission line for positioning the dielectric resonator constituting the feedback circuit. The body resonator can be easily placed in the optimum position, and work efficiency is greatly improved. Also,
Since the difference in height between the top surface of the substrate and the top surface of the glass coating portion becomes very small, the adhesive becomes very good when the dielectric resonator is fixed with an adhesive, which has the advantage of improving reliability.

[Brief explanation of the drawing]

FIG. 1 is a plan view showing an example of a microwave semiconductor oscillator, FIG. 2 is an enlarged sectional view of the vicinity of the dielectric resonator arrangement part of FIG. 1, and FIG. 3 is an embodiment of the microwave semiconductor oscillator of the present invention. FIG. 4 is a plan view with the dielectric resonator removed from FIG. 3, and FIG. 5 is an enlarged sectional view of the vicinity of the dielectric resonator arrangement portion in FIG. 3. In the figure, 1 is the substrate, 2 is the drain electrode transmission line,
3 is a gate electrode transmission line, 4 is a source electrode transmission line, 5 is a field effect transistor, 6 is a dielectric resonator, and 7 and 8 are glass coat parts. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

[Claims] 1. A drain electrode transmission line, a gate electrode transmission line, and a source electrode transmission line are formed separately on a microwave integrated circuit board, and a dielectric resonator is arranged between the drain electrode transmission line and the gate electrode transmission line. A microwave semiconductor oscillator in which a feedback circuit is configured by a microwave semiconductor oscillator, characterized in that a glass coat portion is provided on a portion of each of the drain electrode transmission line and the gate electrode transmission line for positioning the dielectric resonator. semiconductor oscillator.