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JPS6131870B2 - - Google Patents
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JPS6131870B2 - - Google Patents

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Publication number
JPS6131870B2
JPS6131870B2 JP10021278A JP10021278A JPS6131870B2 JP S6131870 B2 JPS6131870 B2 JP S6131870B2 JP 10021278 A JP10021278 A JP 10021278A JP 10021278 A JP10021278 A JP 10021278A JP S6131870 B2 JPS6131870 B2 JP S6131870B2
Authority
JP
Japan
Prior art keywords
electrode
phase change
light
state
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10021278A
Other languages
Japanese (ja)
Other versions
JPS5526575A (en
Inventor
Koji Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP10021278A priority Critical patent/JPS5526575A/en
Publication of JPS5526575A publication Critical patent/JPS5526575A/en
Publication of JPS6131870B2 publication Critical patent/JPS6131870B2/ja
Granted legal-status Critical Current

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

【発明の詳細な説明】 本発明は、相転移型デイスプレイパネルに関す
るものであり、さらに詳しくは相転移時のヒステ
リシス状態(一旦、電界により強制的にホメオト
ロピツク状態にした後、電圧を下げてフオーカル
コニツク状態に相転移する中間段階で、本来フオ
ーカルコニツク状態が安定な電位においてホメオ
トロピツクを保持している状態をいう)の遷移時
間を見かけ上長くする、すなわち、走査許容時間
を長くできる相転移型デイスプレイパネルに関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a phase change type display panel, and more specifically, the present invention relates to a hysteresis state at the time of phase transition (once the homeotropic state is forcibly brought to a homeotropic state by an electric field, and then the focal state is changed by lowering the voltage). This is a phase transition type that can apparently lengthen the transition time of the focal conic state (which is the intermediate stage of the phase transition to the nic state, which is a state in which the focal conic state retains homeotropy at a stable potential), that is, it can lengthen the scanning allowable time. This relates to display panels.

最近、相転移型デイスプレイパネルは、低消費
電力およびメモリー機能からその有用性が注目さ
れ、研究開発が進められている。特に、従来より
マトリツクス型デイスプレイパネルでは最大の難
問であつたクロストークのないマトリツクス駆動
法(電子通信学会電子部品・材料研究会資料
CPM75−11)が適用できるため大型マトリツク
駆動への可能性が期待されている。
Recently, phase change type display panels have attracted attention due to their usefulness due to their low power consumption and memory functions, and research and development is progressing. In particular, we are focusing on matrix drive methods that eliminate crosstalk, which has traditionally been the biggest challenge in matrix-type display panels (IEICE Electronic Components and Materials Study Group Materials).
CPM75-11) can be applied, so it is expected to have the potential to drive large matrices.

相転移型デイスプレイでは、たとえば、第1図
に示すような電圧一透過率特性を示す。すなわ
ち、第1図に示す如く、 昇圧により一旦散乱し(フオーカルコニツク
状態:F)、消える(ホメオトロピツク状態:
H)。
A phase change type display exhibits a voltage-transmittance characteristic as shown in FIG. 1, for example. That is, as shown in Fig. 1, by increasing the pressure, it is once scattered (focalconic state: F) and then disappears (homeotropic state:
H).

降圧で急に下げると短期間(Sec)散乱して
消える(渦状組織:S)。
When the pressure is suddenly lowered, it scatters for a short period of time (Sec) and disappears (vortex-like structure: S).

徐々に下げるとヒステリシス状態(準安定ホ
メオトロピツク状態:H′)を経て散乱が生じ
て電界なしで散乱を持続する(無電界フオーカ
ルコニツク状態:F′)。
When the value is gradually lowered, scattering occurs through a hysteresis state (metastable homeotropic state: H'), and scattering continues without an electric field (fieldless focal conic state: F').

あるいはまた、第2図A,Bに示すような波形
でもそれぞれ同図D,Eに示すような書き込み
(散乱)が生ずる。
Alternatively, even with the waveforms shown in FIG. 2A and B, writing (scattering) as shown in FIGS. 2D and E occurs, respectively.

しかしながら、本方式において大型パネルを使
用してマトリツクス表示ライン数の増加をするた
めには、電圧の昇降に際した相転移のヒステリシ
ス状態が長時間保たれねばならない。すなわち、
透明なヒステリシス状態(H′)のうちに散乱表
示の書き込みがすべて完了しないとX軸電極群と
Y軸電極群との交差により形成される画素の輪郭
から内側周辺部にかけて徐々にヒステリシス状態
の破壊、すなわち、ホメオトロピツク状態からフ
オーカルコニツク状態への転移が進行し散乱を始
め、第2図C,Fに示す如く透過率の低下をきた
すため書き込み部と非書き込み部との区別ができ
なくなる欠点がある。このヒステリシス状態はセ
ル厚、温度、配向状態等変動の要因が多く、変動
幅も大きく、実用上ヒステリシス状態を長くする
ことはパネルが多数行化する程困難を増し、多数
行化への唯一の欠点とされている。
However, in order to increase the number of matrix display lines using a large panel in this method, a hysteresis state of phase transition must be maintained for a long time when the voltage increases and decreases. That is,
If all the writing of the scattering display is not completed in the transparent hysteresis state (H'), the hysteresis state will gradually break down from the outline of the pixel formed by the intersection of the X-axis electrode group and the Y-axis electrode group to the inner periphery. That is, as the transition from the homeotropic state to the focal conic state progresses, scattering begins and the transmittance decreases as shown in FIG. be. This hysteresis state is affected by many factors such as cell thickness, temperature, orientation state, etc., and the fluctuation range is large.In practice, it becomes increasingly difficult to lengthen the hysteresis state as the number of rows increases. It is considered a drawback.

本発明者は、この多数行化への制限を取り除く
かまたは限界を伸ばすための方法を研究し、画素
の輪郭から内側周辺部にかけて遮光し、たとえヒ
ステリシスの破壊が始まつてもこれが画素の中央
部へ進行する比較的に長い時間、観察者から見え
ないようにすることによつて、特性はこのままの
状態で見かけ上ヒステリシス状態を長くして多数
行化への限界を伸ばすことに成功して本発明に到
達したものである。
The present inventor researched a method to remove or extend the limit to this multi-line configuration, and by shielding light from the outline of the pixel to the inner periphery, even if hysteresis begins to break down, this is done at the center of the pixel. By making it invisible to the observer for a relatively long period of time as it progresses to the section, we succeeded in lengthening the apparent hysteresis state and extending the limit to multi-line formation while maintaining the characteristics as they are. This has led to the present invention.

以下、本発明について詳細に説明する。 The present invention will be explained in detail below.

第3図は相転移型デイスプレイパネルの一例を
示す平面図であつて、該パネルは多数個のX軸
電極群X1,X2…………Xm,…………を設けた前
面電極基板2と多数個のY軸電極群Y1,Y2……
……,Yn,…………を設けた後面電極基板3と
をそれぞれの電極面を内側にして両電極群を相互
に交差させて対向せしめその間に、たとえば、シ
ツフ系、エステル系、ビフエニル系、アゾキシ
系、ピリミジン系、フエニルシクロヘキサン系等
の公知のネマチツク液晶の正または負の誘電異方
性を有するものの混合組成物で、全体として正の
誘電異方性を有するものを基本組成とし、これに
5〜30%の光学活性化合物の、例えばコレステロ
ール誘導体や、カイラルネマチツク等の光学活性
基を有する化合物を添加した組成物の如き相転移
型液晶を充填し、さらに周囲を封止してなる。本
発明は、このような相遷移型デイスプレイパネル
において、第4図に示す如く、前面電極基板の少
なくとも一方の面の、X軸電極群(第4図ではそ
のうちm番目のX軸電極Xmを示す)とY軸電極
群(第4図ではそのうちn番目のY軸電極Ynを
示す)との交差により形成される画素4mnの輪
郭5mnの内側周辺部6mnに対応する部分に遮光
材料層を設ける。この遮光材料層を上記内側周辺
部6mnに対応する部分に設ければ所期の目的を
達成しうるが、該遮光材料層は輪郭5mnの外側
周辺部7mnにも同時に設けておく方が画素と遮
光材料層との位置合わせが多少ずれてもパネルの
機能を損わないなど製造上のメリツトがあるので
好ましい。上記遮光材料層8は第5図及び第6図
に示すように前面電極基板2の一方の面に設ける
ことができるが、第6図の如く、電極と反対側に
設けた場合は、基板厚みによる視差ができて、本
発明の効果を損なう視角が生じるのであまり好ま
しくない。また、基板2の両面に設けることも可
能であり、この場合、両面の遮光材料層を位置合
わせして設ければ視角を限定する効果を持つ。
FIG. 3 is a plan view showing an example of a phase change type display panel, in which the panel 1 has a front electrode provided with a large number of X-axis electrode groups X 1 , X 2 ......Xm, ...... Substrate 2 and multiple Y-axis electrode groups Y 1 , Y 2 ...
. . ., Yn, . A mixed composition of known nematic liquid crystals having positive or negative dielectric anisotropy such as azoxy-based, pyrimidine-based, phenylcyclohexane-based, etc., with the basic composition having positive dielectric anisotropy as a whole, This is filled with a phase change type liquid crystal such as a composition containing 5 to 30% of an optically active compound, such as a cholesterol derivative or a compound having an optically active group such as chiral nematics, and the surrounding area is further sealed. Become. In such a phase transition type display panel, the present invention provides a group of X-axis electrodes (the m-th X-axis electrode Xm is shown in FIG. 4) on at least one surface of the front electrode substrate, as shown in FIG. ) and the Y-axis electrode group (FIG. 4 shows the n-th Y-axis electrode Yn) in a portion corresponding to the inner peripheral portion 6mn of the outline 5mn of the pixel 4mn. If this light-shielding material layer is provided in a portion corresponding to the inner peripheral portion 6mn, the desired purpose can be achieved, but it is better to simultaneously provide the light-shielding material layer on the outer peripheral portion 7mn of the outline 5mn. This is preferable because it has advantages in manufacturing, such as not impairing the function of the panel even if the alignment with the light-shielding material layer is slightly misaligned. The light-shielding material layer 8 can be provided on one side of the front electrode substrate 2 as shown in FIGS. 5 and 6, but if it is provided on the side opposite to the electrode as shown in FIG. This is not very preferable because it causes parallax and a viewing angle that impairs the effects of the present invention. Further, it is also possible to provide the light shielding material layers on both sides of the substrate 2, and in this case, if the light shielding material layers on both sides are aligned and provided, it has the effect of limiting the viewing angle.

前面電極基板の少なくとも一方の面に遮光材料
層を設けるには、アルミニウム、チタン、クロ
ム、鉄、コバルト、ニツケル、銀、金、セレン、
錫、インジウムなどの金属、又はカーボン、硫化
亜鉛、シリコン、などの不透明体をマスクを介し
て蒸気デポジツト、スパツター又は蒸着する方
法、予めレジストをのせておき蒸気デポジツト、
スパツターまたは蒸着等で被覆した後レジスト部
分のみ剥離する方法、銀、鉄、鉛、クロム、金、
亜鉛、アルミニウム等の粉末を含む導電性ペース
ト又は黒、赤、青、緑その他各色の顔料または染
料を含むインキなどの不透明絶縁物などを印刷す
る方法、プラスチツクやセラミツク等のパターン
化した遮光性シートを接着剤ないし粘着剤を介し
て貼り合わせる方法などにより行なうことができ
る。あるいはまた、図示しないが、上記方法によ
り、ガラス、プラスチツクなどの透明シートない
し板の一方の面に予め遮光材料層を設け、しかる
後、前面電極基板の外面に接着剤ないし粘着剤を
介して貼着したり、クリツプやネジで止めたりそ
の他任意の方法により固定することも可能であ
る。
To provide a light shielding material layer on at least one surface of the front electrode substrate, aluminum, titanium, chromium, iron, cobalt, nickel, silver, gold, selenium,
A method of vapor depositing, sputtering or vapor depositing metals such as tin, indium, or opaque substances such as carbon, zinc sulfide, silicon, etc. through a mask, vapor depositing with a resist placed in advance,
A method of coating with a sputter or vapor deposition and then peeling off only the resist part, silver, iron, lead, chromium, gold,
A method of printing opaque insulating materials such as conductive paste containing powders of zinc, aluminum, etc. or inks containing pigments or dyes of black, red, blue, green, and other colors, and patterned light-shielding sheets of plastic, ceramic, etc. This can be done by a method such as bonding through an adhesive or a pressure-sensitive adhesive. Alternatively, although not shown, a light-shielding material layer is provided in advance on one surface of a transparent sheet or plate made of glass, plastic, etc. by the method described above, and then attached to the outer surface of the front electrode substrate via an adhesive or pressure-sensitive adhesive. It is also possible to fix it by attaching it, fixing it with clips, screws, or any other arbitrary method.

上記遮光材料層は、第5図示の如く前面電極基
板の電極面側に設ける場合には導電性材料で形成
することもできるが、絶縁材料で形成することが
望ましい。この時、導電性材料を用いるには絶縁
被膜を介することもできる。また、上記の如く画
素の輪郭の外側周辺部にも遮光材料層を設ける場
合には、隣接する画素の外側周辺部を接続させ
て、この接続部分に相当する位置にも遮光材料層
を設けることができる。この場合において、第5
図示の如く前面電極基板の電極面側に直接遮光材
料層を設けるには短絡の防止上絶縁性材料を用い
る必要があるが、絶縁被膜を介せば導電性材料で
あつても適用可能である。
The light-shielding material layer may be formed of a conductive material when provided on the electrode surface side of the front electrode substrate as shown in FIG. 5, but it is preferably formed of an insulating material. At this time, in order to use a conductive material, an insulating film may be used. Furthermore, when a light-shielding material layer is also provided on the outer periphery of the pixel outline as described above, the outer periphery of adjacent pixels may be connected, and the light-shielding material layer may also be provided at a position corresponding to this connection. I can do it. In this case, the fifth
In order to provide a light-shielding material layer directly on the electrode surface side of the front electrode substrate as shown in the figure, it is necessary to use an insulating material to prevent short circuits, but even conductive materials can be used if an insulating film is interposed. .

以上の説明で明らかなように、本発明によれ
ば、相転移時のヒステリシス状態の遷移時間を見
かけ上長くすることによりパネルの多数行化を図
ることができる。
As is clear from the above description, according to the present invention, it is possible to increase the number of rows of the panel by apparently lengthening the transition time of the hysteresis state at the time of phase transition.

次に、実施例を示して、さらに本発明を具体的
に説明する。
Next, the present invention will be further specifically explained by showing examples.

実施例 ガラス基板上に2本/mmのピツチで0.4mmのネ
サ電極を250本形成し、さらに蒸着により酸化硅
素の電極保護層を800Åの厚さに設けた電極板を
2枚用意した。
Example Two electrode plates were prepared in which 250 NESA electrodes of 0.4 mm were formed at a pitch of 2 electrodes/mm on a glass substrate, and an electrode protective layer of silicon oxide with a thickness of 800 Å was provided by vapor deposition.

次に一方の電極板の電極保護層上に感光性レジ
ストを塗布して露光現像し0.35mm角で2個/mmピ
ツチのマトリツクスをネサ電極上に重ね合わせて
形成した。この基板上にスパツタリング法により
低反射性のクロムを被覆した後、レジストを除去
することによりレジスト上のクロムを剥離して、
0.35mm角の透光窓のマトリツクスを持つ遮光層を
形成した。
Next, a photosensitive resist was applied onto the electrode protective layer of one electrode plate, exposed and developed, and a matrix of 0.35 mm square with a pitch of 2 resists/mm was superimposed on the NESA electrode. After coating low-reflectivity chromium on this substrate by sputtering method, the chromium on the resist is peeled off by removing the resist.
A light-shielding layer with a matrix of transparent windows of 0.35 mm square was formed.

次に両基板上に垂直配向性の配向剤(大日本イ
ンキ社製、サーフイン150)を塗布しスペーサー
を介して両基板の電極側を対向させ、厚み8μの
セルを構成した。別途p−メトキシベンジリデン
−p−n−ブチルアニリン40部、p−エトキシベ
ンジリデン−p−n−ブチルアニリン30部、p−
n−ブトキシベンジリデン−p−シアノアニリン
20部、コレステリツクノナノエート10部(上記の
各部は重量部を示す)からなる記憶型液晶組成物
を用意し、前記セルに注入封止した。
Next, a vertical alignment agent (Surf-in 150, manufactured by Dainippon Ink Co., Ltd.) was applied onto both substrates, and the electrode sides of both substrates were opposed to each other via a spacer to form a cell with a thickness of 8 μm. Separately, 40 parts of p-methoxybenzylidene-p-n-butylaniline, 30 parts of p-ethoxybenzylidene-p-n-butylaniline, p-
n-butoxybenzylidene-p-cyanoaniline
A memory type liquid crystal composition consisting of 20 parts of cholesteric nonanoate and 10 parts of cholesteric nonanoate (the above parts indicate parts by weight) was prepared and injected into the cell and sealed.

また、遮光層を持たない以外は同様のセルを作
製し見かけ上の走査の許容時間の比較を行つた。
すなわち、30V(ゼロピーク電圧)の矩形波
(1KHz)を印加後15V(ゼロピーク電圧)に降圧
し目視で散乱の視認できるまでの時間を計測した
ところ、遮光層のないもので8秒、遮光層のある
もので14秒と大巾な走査許容時間の増大をみた。
In addition, a similar cell was fabricated except that it did not have a light-shielding layer, and the apparent allowable scanning time was compared.
In other words, after applying a 30V (zero peak voltage) rectangular wave (1KHz) and stepping down to 15V (zero peak voltage), we measured the time it took for scattering to be visually recognized. In some cases, the allowable scanning time increased significantly to 14 seconds.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は相転移型デイスプレイパネルにおける
電圧一透過率特性を示す図、第2図は相転移型デ
イスプレイパネルにおける電圧と透過率の時間的
変化を示す図、第3図は相転移型デイスプレイパ
ネルの平面図、第4図は本発明の相転移型デイス
プレイパネルの一部を拡大して一つの画素部分を
模式的に示す平面図、第5図及び第6図は第4図
に示す画素部分をX軸電極に平行に切断して模式
的に示す切断部端面図である。 ……相転移型デイスプレイパネル、2……前
面電極基板、3……後面電極基板、4mn……m
番目のX軸電極とn番目のY軸電極との交差によ
り形成される画素、5mn……画素4mnの輪郭、
6mn……輪郭5mnの内側周辺部、7mn……輪
郭5mnの外側周辺部、8……遮光材料層、Xm…
…m番目のX軸電極、Ym……n番目のY軸電
極。
Figure 1 is a diagram showing voltage-transmittance characteristics in a phase change display panel, Figure 2 is a diagram showing temporal changes in voltage and transmittance in a phase change display panel, and Figure 3 is a diagram showing changes in voltage and transmittance over time in a phase change display panel. FIG. 4 is a plan view schematically showing one pixel portion by enlarging a part of the phase change display panel of the present invention, and FIGS. 5 and 6 are the pixel portions shown in FIG. 4. FIG. 3 is a schematic end view of a cut portion cut parallel to an X-axis electrode. 1 ...Phase change display panel, 2...Front electrode substrate, 3...Rear electrode substrate, 4mn...m
A pixel formed by the intersection of the th X-axis electrode and the nth Y-axis electrode, 5mn...the outline of the pixel 4mn,
6mn...inner periphery of contour 5mn, 7mn...outer periphery of contour 5mn, 8...light shielding material layer, Xm...
...mth X-axis electrode, Ym...nth Y-axis electrode.

Claims (1)

【特許請求の範囲】[Claims] 1 多数個のX軸電極群を設けた前面電極基板と
多数個のY軸電極群を設けた後面電極基板とをそ
れぞれの電極面を内側にして両電極群を相互に交
差させて対向せしめその間に相転移型液晶を充填
し、さらに周囲を封止してなる相転移型デイスプ
レイパネルにおいて、前面電極基板の少なくとも
一方の面の、X軸電極群とY軸電極群との交差に
より形成される画素の輪郭の内側周辺部に対応す
る部分に遮光材料層を設けたことを特徴とする相
転移型デイスプレイパネル。
1. A front electrode substrate on which a large number of X-axis electrode groups are provided and a back electrode substrate on which a large number of Y-axis electrode groups are provided are placed opposite to each other with their respective electrode surfaces facing inside, with both electrode groups crossing each other. In a phase change type display panel in which a phase change type liquid crystal is filled with a phase change type liquid crystal and the periphery is further sealed, the electrode group is formed by the intersection of an X-axis electrode group and a Y-axis electrode group on at least one surface of the front electrode substrate. A phase change display panel characterized in that a light-shielding material layer is provided in a portion corresponding to the inner peripheral portion of the outline of a pixel.
JP10021278A 1978-08-17 1978-08-17 Phase transformation type display panel Granted JPS5526575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10021278A JPS5526575A (en) 1978-08-17 1978-08-17 Phase transformation type display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10021278A JPS5526575A (en) 1978-08-17 1978-08-17 Phase transformation type display panel

Publications (2)

Publication Number Publication Date
JPS5526575A JPS5526575A (en) 1980-02-26
JPS6131870B2 true JPS6131870B2 (en) 1986-07-23

Family

ID=14267984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10021278A Granted JPS5526575A (en) 1978-08-17 1978-08-17 Phase transformation type display panel

Country Status (1)

Country Link
JP (1) JPS5526575A (en)

Also Published As

Publication number Publication date
JPS5526575A (en) 1980-02-26

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