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JPS6135268B2 - - Google Patents
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JPS6135268B2 - - Google Patents

Info

Publication number
JPS6135268B2
JPS6135268B2 JP52017701A JP1770177A JPS6135268B2 JP S6135268 B2 JPS6135268 B2 JP S6135268B2 JP 52017701 A JP52017701 A JP 52017701A JP 1770177 A JP1770177 A JP 1770177A JP S6135268 B2 JPS6135268 B2 JP S6135268B2
Authority
JP
Japan
Prior art keywords
film
conductive film
transparent conductive
molded product
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52017701A
Other languages
Japanese (ja)
Other versions
JPS53102881A (en
Inventor
Hitoshi Mikoshiba
Norio Takagi
Masato Sugyama
Kunihiko Teranishi
Juji Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP1770177A priority Critical patent/JPS53102881A/en
Publication of JPS53102881A publication Critical patent/JPS53102881A/en
Publication of JPS6135268B2 publication Critical patent/JPS6135268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5826Treatment with charged particles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5846Reactive treatment
    • C23C14/5853Oxidation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Conductive Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)

Description

【発明の詳細な説明】 本発明は、透明導電性を有する成型物の製造法
に関し、更に詳しくは成型物上の金属又は金属低
酸化物の被覆膜を、酸素を含む常圧気相中での放
電反応により活性化された酸素雰囲気に接触させ
て酸化することにより、透明導電性膜を有する成
型物を製造する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a molded product having transparent conductivity, and more specifically, the present invention relates to a method for producing a molded product having transparent conductivity, and more specifically, a coating film of a metal or low metal oxide on the molded product is coated in a normal pressure gas phase containing oxygen. The present invention relates to a method for producing a molded product having a transparent conductive film by contacting with an oxygen atmosphere activated by a discharge reaction to oxidize the product.

従来、金属又は金属低酸化物の被覆を酸化せし
める方法として、例えば気相中での加熱酸化、酸
化剤による液相酸化、グロー放電酸化あるいはア
ーク放電酸化が知られている。
Conventionally, methods for oxidizing metal or low metal oxide coatings include, for example, heating oxidation in a gas phase, liquid phase oxidation using an oxidizing agent, glow discharge oxidation, or arc discharge oxidation.

これらの酸化方法のうち、加熱酸化法は、高分
子成型物を基体として用いた場合には、150℃以
上に加熱して面状形状が何ら変形しない高分子支
持体は少く、種々の高分子基体にその平面性を損
うことなく金属酸化物の透明導電性被膜を形成さ
せることは困難であつた。また、酸化剤による液
相酸化、陽極酸化は、常温で酸化せしめることが
でき、耐熱性の低い高分子成型物の表面にも金属
酸化物より成る透明導電性被膜を成形できるが、
その反面において金属被膜の一部が溶液中へ溶出
することを防ぐことは困難であつた。グロー放電
酸化は特別の真空装置を必要とされ、工業的に必
ずしも有利な方法ではなく、またアーク放電酸化
は非常な高温(3000〜6000〓)下で行なわれる。
Among these oxidation methods, the thermal oxidation method is effective when using a molded polymer as a substrate. It has been difficult to form a transparent conductive film of metal oxide on a substrate without impairing its flatness. In addition, liquid phase oxidation using an oxidizing agent and anodic oxidation can oxidize at room temperature, and a transparent conductive film made of metal oxide can be formed even on the surface of a polymer molded product with low heat resistance.
On the other hand, it has been difficult to prevent part of the metal coating from eluting into the solution. Glow discharge oxidation requires special vacuum equipment and is not necessarily an industrially advantageous method, and arc discharge oxidation is carried out at very high temperatures (3000-6000).

本発明者は、上記の被覆膜を容易に酸化するこ
とができ、またその際に基体として耐熱性の低い
成型物を用いることができ、しかも酸化膜が均一
〓〓〓〓〓
な動電性被膜である酸化方法について鋭意研究し
た結果、酸素を含む常圧気相中の無声放電又はコ
ロナ放電によつて活性化された雰囲気によつて酸
化する方法が上記要件を満足することを見出し、
本発明に到達したものである。
The inventors of the present invention have discovered that the above-mentioned coating film can be easily oxidized, that a molded product with low heat resistance can be used as a substrate, and that the oxide film is uniform.
As a result of intensive research on oxidation methods for electrokinetic coatings, we have found that a method of oxidation using an atmosphere activated by silent discharge or corona discharge in a normal pressure gas phase containing oxygen satisfies the above requirements. heading,
This has led to the present invention.

すなわち、本発明は、成形物表面に被覆された
金属又は金属低酸化物の被覆膜を酸化せしめて透
明導電性膜を有する成型物を製造する際に、該酸
化を酸素を含む常圧気相中での放電によつて活性
化された酸素雰囲気と該被覆膜との接触によつて
行なうことを特徴とする透明導電性膜を有する成
型物の製造法である。
That is, the present invention provides a method for producing a molded product having a transparent conductive film by oxidizing a metal or metal low oxide coating film coated on the surface of the molded product, in which the oxidation is carried out in an atmospheric pressure gas phase containing oxygen. This is a method for producing a molded article having a transparent conductive film, characterized in that the process is carried out by bringing the coating film into contact with an oxygen atmosphere activated by an electric discharge therein.

本発明に用いられる成型物基材としては、有機
系高分子成型物、無機系成型物及びそれらの複合
成型物のいずれでも使用できる。
As the molded product base material used in the present invention, any of organic polymer molded products, inorganic molded products, and composite molded products thereof can be used.

有機系高分子成型物としては、例えばポリエチ
レンテレフタレート樹脂、ポリエチレンナフタレ
ート樹脂、アクリル樹脂、ABS樹脂、スチレン
樹脂、ポリアセタール樹脂、ポリエチレン樹脂、
ポリプロピレン樹脂などの熱可塑性樹脂、エポキ
シ樹脂、ジアリルフタレート樹脂、ケイ素樹脂、
不飽和ポリエステル樹脂、フエノール系樹脂、尿
素樹脂などの熱硬化性樹脂などをあげることがで
きる。また、これらは1種または2種以上の混合
物であつてもよい。
Examples of organic polymer molded products include polyethylene terephthalate resin, polyethylene naphthalate resin, acrylic resin, ABS resin, styrene resin, polyacetal resin, polyethylene resin,
Thermoplastic resins such as polypropylene resins, epoxy resins, diallyl phthalate resins, silicone resins,
Examples include thermosetting resins such as unsaturated polyester resins, phenolic resins, and urea resins. Moreover, these may be used alone or in a mixture of two or more.

無機成型物としては、例えばソーダガラス、ホ
ウ珪酸ガラス、珪酸ガラスなどのガラス質のも
の、アルミナ、マグネシア、シルコニア、シルカ
系などの陶磁器さらに金属酸化物および各種化合
物半導体などでも良い。
Examples of the inorganic molded product include glass materials such as soda glass, borosilicate glass, and silicate glass, ceramics such as alumina, magnesia, zirconia, and silica, as well as metal oxides and various compound semiconductors.

高分子成型物は、無機成型物に比較して軽量で
あり、打抜き、切抜きなどの加工性、可撓性、耐
衝撃性、誘電特性が優れている。この成型物の形
状は任意であり、例えばシート状、フイルム状が
あげられるが、とりわけフイルム状のものは巻取
や連続生産が可能という利点を有する。この中で
特にポリエチレンテレフタレートフイルムは、耐
熱性、透明性および電気特性に優れている。これ
らの優れた性質をより一層生かすためのフイルム
厚さは好ましくは6〜500μ、特に好ましくは12
〜125μである。
Polymer molded products are lighter than inorganic molded products, and have excellent processability such as punching and cutting, flexibility, impact resistance, and dielectric properties. The shape of this molded product can be arbitrary, and examples include a sheet shape and a film shape, but a film shape has the advantage that it can be rolled up and produced continuously. Among these, polyethylene terephthalate film is particularly excellent in heat resistance, transparency, and electrical properties. In order to take full advantage of these excellent properties, the film thickness is preferably 6 to 500 μm, particularly preferably 12 μm.
~125μ.

これらの基材表面の被覆膜は金属又は金属低減
酸化物から形成されたものである。金属として
は、例えば錫、インジウム、チタン、ジルコニウ
ムがあげられ、これは1種単独でも2種以上でも
よく、また金属低酸化物としてはこれらの金属の
1種又は2種以上の低酸化物があげられる。これ
らのうち、被覆膜の透明性、導電性および酸化処
理の容易さの点からインジウムの低酸化物
(InxOy(但し0.5<Y/X<1.5)〕又はインジウ
ム・錫の低酸化物(InxSnzOy(但しx、yの関
係は前記同様、zはz>O)〕が特に好ましい。
The coating films on the surfaces of these substrates are formed from metals or metal-reducing oxides. Examples of metals include tin, indium, titanium, and zirconium, which may be used singly or in combination of two or more types, and as metal low oxides, one or more of these metals may be used. can give. Among these, from the viewpoint of transparency, conductivity, and ease of oxidation treatment of the coating film, low oxide of indium (In x O y (however, 0.5<Y/X<1.5)] or low oxide of indium/tin is recommended. In x Sn z O y (however, the relationship between x and y is the same as above, and z is z>O) is particularly preferable.

上記の金属および金属の低酸化物を成型物基材
上に設ける方法としては、真空蒸着法、カソード
スパツタリング法、プラズマ溶射法、気相メツキ
法、化学メツキ法、電気メツキ法、化学コーテイ
ング法およびそれらの組合せ方法のいずれでも可
能であるが、形成被覆膜の均一性、製造の容易性
および不導体成型物への被覆能から特に真空蒸着
法およびカソードスパツタリング法が適してい
る。この際、前記の金属又は金属酸化物の被覆厚
さは透明電導性膜の導電性と透光性、酸化処理に
要する時間などと関係して決められ、一様ではな
いが、その上限は被覆層と成型物基材との密着性
や均一性の見地から約3000Å程度であり、酸化の
容易さから2000Å以下、得られ膜の透明性から
1500Å以下が好ましい。一方、膜厚の下限は、得
られる透明導電性膜の用途により一義的には決め
られないが、例えば滞電防止用なら30Åで充分で
ある。
Methods for providing the metals and low oxides of metals on the molded substrate include vacuum evaporation, cathode sputtering, plasma spraying, vapor phase plating, chemical plating, electroplating, and chemical coating. Although any method or a combination thereof is possible, vacuum evaporation method and cathode sputtering method are particularly suitable from the viewpoint of uniformity of the formed coating film, ease of manufacture, and ability to coat nonconductor molded objects. . At this time, the coating thickness of the metal or metal oxide mentioned above is determined in relation to the conductivity and translucency of the transparent conductive film, the time required for oxidation treatment, etc., and is not uniform, but the upper limit is the coating thickness. From the standpoint of adhesion and uniformity between the layer and the base material of the molded product, it is approximately 3000 Å, and from the viewpoint of ease of oxidation it is less than 2000 Å, and from the viewpoint of the transparency of the resulting film.
The thickness is preferably 1500 Å or less. On the other hand, the lower limit of the film thickness cannot be determined uniquely depending on the use of the resulting transparent conductive film, but for example, 30 Å is sufficient for preventing static electricity.

本発明方法においては、酸素を含む常圧気相中
での放電反応により酸素雰囲気を活性化し、この
雰囲気と上記の被膜(成型物上の)との接触によ
つて、該被膜を酸化するのであるが、この放電と
しては無声放電およびコロナ放電である。この2
種のタイプの放電は他のタイプの放電、例えばグ
ロー放電やアーク放電とは異なり、部分破壊によ
る火花前の自続放電である。また、別の他のタイ
プの放電やコロナ放電は;グロー放電の様な低圧
(1 Torr前後)を必要とせず、又、アーク放電
の様に高温(3000〜6000〓)とならず、常温、常
圧付近で行なわれることが特徴である。したがつ
て、本発明方法における放電はグロー放電の様な
特別な真空装置を必要とせず、また装置の構造も
複雑ではなく、しかも大きな面積の被膜を容易に
連続的に処理できる利点がある。
In the method of the present invention, an oxygen atmosphere is activated by a discharge reaction in a normal pressure gas phase containing oxygen, and the above-mentioned coating (on the molded product) is oxidized by contact with this atmosphere. However, this discharge is silent discharge and corona discharge. This 2
Seed type discharges, unlike other types of discharges such as glow discharges and arc discharges, are self-sustaining discharges before sparking due to partial breakdown. In addition, other types of discharge and corona discharge do not require low pressure (around 1 Torr) like glow discharge, and do not require high temperatures (3000 to 6000〓) like arc discharge, and can be used at room temperature. It is characterized by being carried out near normal pressure. Therefore, the discharge in the method of the present invention does not require a special vacuum device such as a glow discharge, and the structure of the device is not complicated, and there is an advantage that a large area of coating can be easily and continuously treated.

一般に、無声放電とコロナ放電との区別は必ず
しも明確でないが、無声放電は二つの電極間に誘
〓〓〓〓〓
電体を介して光流高電圧を印加した時、その間隙
に起る放電現象を指し、オゾンの発生効率は通常
のコロナ放電より優れており、本発明方法に特に
適している。そして無声放電又はコロナ放電を酸
素を含む常圧気相中で行なうことにより、オゾン
の様な活性な化学種が生成される。この活性な化
学種を含む雰囲気と例えばインジウム金属あるい
はその低酸化物の膜を被覆した成型物との接触に
より該被覆膜の酸化反応が速やかに進行し、均質
な透明導電性被膜を有する成型物が容易に製造さ
れるのである。
In general, the distinction between silent discharge and corona discharge is not necessarily clear, but silent discharge is caused by the induction between two electrodes.
This refers to the discharge phenomenon that occurs in the gap when a high voltage is applied to a light stream through an electric body, and the ozone generation efficiency is superior to that of ordinary corona discharge, making it particularly suitable for the method of the present invention. Active chemical species such as ozone are generated by performing silent discharge or corona discharge in a normal pressure gas phase containing oxygen. When an atmosphere containing this active chemical species comes into contact with a molded product coated with a film of, for example, indium metal or its low oxide, an oxidation reaction of the coating film proceeds rapidly, resulting in a molded product with a homogeneous transparent conductive film. Things can be manufactured easily.

本発明方法におけるかかる酸化方法は、常温付
近の温度で行なうことができるため、耐熱性が比
較的低い高分子を成型物基材として用いることが
できる。また、本発明方法においては成型物及
び/又は活性化された酸素雰囲気を適度に加熱し
てもよく、これによつて酸化時間の短縮をはかる
ことができる。この加熱温度の好適範囲は成型物
基材の耐熱性によつて種々異なり一様ではない。
例えば基材がポリエチレンテレフタレートである
場合は200℃以下が好ましい。
Since the oxidation method in the method of the present invention can be carried out at a temperature around room temperature, a polymer having relatively low heat resistance can be used as the base material of the molded product. Furthermore, in the method of the present invention, the molded product and/or the activated oxygen atmosphere may be appropriately heated, thereby shortening the oxidation time. The preferred range of this heating temperature varies depending on the heat resistance of the molded product base material and is not uniform.
For example, when the base material is polyethylene terephthalate, the temperature is preferably 200°C or less.

本発明方法における放電酸化を行なう場合、放
電電極付近で被覆膜の酸化を行なうと、該膜の最
上部付近の酸化が過度に進んで導電率が著しく低
下した層をエツチングして除くことができる。こ
のエツチングによつて良好な導電性を有する透明
導電性被膜を得ることができる。なお、電極付近
とは、電極の形状や印加電圧によつてその間隙は
種々異なるものである。例えば印加電圧数KVで
はその距離は電極から5cm以内、20KV前後では
15cm以内が望ましい。
When performing discharge oxidation in the method of the present invention, if the coating film is oxidized near the discharge electrode, the layer near the top of the film where oxidation has progressed excessively and the conductivity has significantly decreased may be removed by etching. can. By this etching, a transparent conductive film having good conductivity can be obtained. Note that the gap in the vicinity of the electrode varies depending on the shape of the electrode and the applied voltage. For example, when the applied voltage is several KV, the distance is within 5 cm from the electrode, and when the applied voltage is around 20 KV, the distance is within 5 cm from the electrode.
Preferably within 15cm.

本発明方法によれば、均一な導電性膜を有する
成型物の連続的な製造が可能であり、得られた製
品は例えば電子写真、帯電防止材料、面発光体、
固体デイスプレイ、光メモリー用、光電変換素
子、光通信・光情報処理、太陽エネルギー利用材
料と広い用途を有する。
According to the method of the present invention, it is possible to continuously produce a molded product having a uniform conductive film, and the obtained products can be used, for example, in electrophotography, antistatic materials, surface light emitters, etc.
It has a wide range of uses, including solid-state displays, optical memories, photoelectric conversion elements, optical communications and information processing, and solar energy utilization materials.

以下、実施例をあげて本発明を更に具体的に説
明する。なお、例中の部は重量部である。
Hereinafter, the present invention will be explained in more detail with reference to Examples. Note that parts in the examples are parts by weight.

実施例 1 厚さ75μmのポリエチレンテレフタレートフイ
ルムに酸化インジウム93部、酸化錫7部の混合物
を真空蒸着した。得られた蒸着膜はインジウム・
錫の低酸化物であつて、膜圧250Å、表面抵抗60
KΩ/□、600nmの光の透過率50%の黒色導電性
フイルムである。オゾン発生機0−1−2型(日
本オゾン、株式会社製)により、酸素ガスを活性
化し(酸素ガス中のオゾン濃度1.6重量%)160℃
に加熱した前記黒色導電性フイルム上を30分間流
したところ表面抵抗5KΩ/□、600nmの光の透
過率86%の透明導電性フイルムが得られた。一
方、160℃に加熱した同様ない黒色導電性フイル
ム上を、上記の如き活性化を何ら行なわない酸素
ガスを同量で30分間流したところ、得られた透明
導電性フイルムは表面抵抗12KΩ/□、600nmの
光透過率71%であり、酸素ガスを活性化しない場
合と比較してかなり透明性が悪かつた。
Example 1 A mixture of 93 parts of indium oxide and 7 parts of tin oxide was vacuum-deposited onto a polyethylene terephthalate film having a thickness of 75 μm. The obtained vapor deposited film is indium.
Low oxide of tin, film thickness 250 Å, surface resistance 60
It is a black conductive film with a transmittance of 50% for light at KΩ/□ and 600 nm. Oxygen gas was activated using an ozone generator type 0-1-2 (manufactured by Nippon Ozone Co., Ltd.) at 160°C (ozone concentration in oxygen gas: 1.6% by weight).
When the film was flowed for 30 minutes over the black conductive film that had been heated to 300 nm, a transparent conductive film with a surface resistance of 5 KΩ/□ and a transmittance of 600 nm light of 86% was obtained. On the other hand, when the same amount of oxygen gas without any activation was flowed for 30 minutes over a similar black conductive film heated to 160℃, the resulting transparent conductive film had a surface resistance of 12KΩ/□. , the light transmittance at 600 nm was 71%, and the transparency was considerably poorer than that in the case where oxygen gas was not activated.

実施例 2 厚さ75μmのポリエチレンテレフタレートフイ
ルムに、酸化インジウム92部と酸化錫8部との混
合物を真空蒸着した。得られた蒸着膜は、インジ
ウム・錫の低酸化物であつて、膜厚300Å、表面
抵抗50KΩ/□、600nmの光の透過率45%の黒色
導電性フイルムである。
Example 2 A mixture of 92 parts of indium oxide and 8 parts of tin oxide was vacuum-deposited onto a polyethylene terephthalate film having a thickness of 75 μm. The obtained vapor deposited film is a black conductive film made of a low oxide of indium and tin, having a thickness of 300 Å, a surface resistance of 50 KΩ/□, and a transmittance of 600 nm light of 45%.

該フイルムを150℃に加熱したローラー状のコ
ロナ放電電極上に帖り付け、10KV印加しコロナ
放電を40分間行ないインジウム低酸化物層を酸化
すると同時に最上層部を取除いた。
The film was placed on a roller-shaped corona discharge electrode heated to 150° C., and corona discharge was performed for 40 minutes by applying 10 KV to oxidize the indium low oxide layer and simultaneously remove the top layer.

得られたフイルムは、光透過率86%(600n
m)表面抵抗が75KΩ/□であり、酸化物層の膜
厚は220Åであつた。
The obtained film has a light transmittance of 86% (600n
m) The surface resistance was 75KΩ/□, and the thickness of the oxide layer was 220Å.

実施例 3 150℃に加熱した実施例2で用いたものと同様
な蒸着フイルムを10KV印加したコロナ放電電極
から10cm離れた活性雰囲気に45分間接触させたと
ころ、光透過率85%(600nm)表面抵抗が100K
Ω/□のフイルムが得られた。酸化物層の膜厚は
300Åであつた。
Example 3 When a vapor-deposited film similar to that used in Example 2 heated to 150°C was brought into contact with an active atmosphere 10 cm away from a corona discharge electrode to which 10 KV was applied for 45 minutes, the surface had a light transmittance of 85% (600 nm). resistance is 100K
A film of Ω/□ was obtained. The thickness of the oxide layer is
It was 300Å.

〓〓〓〓〓
〓〓〓〓〓

Claims (1)

【特許請求の範囲】 1 成型物表面に被覆された金属又は金属低酸化
物の透明導電性膜を有する成型物を製造する際
に、該酸化を酸素を含む常圧気相中での無声放電
又はコロナ放電によつて活性化された酸素雰囲気
と該被覆膜との接触によつて行なうことを特徴と
する透明導電性膜を有する成型物の製造法。 2 被覆膜が錫、インジウム、チタン、ジルコニ
ウム金属およびこれらの金属の低酸化物よりなる
群から選ばれた1種又は2種以上の金属及び/又
は金属の低酸化物より形成された膜である特許請
求の範囲第1項記載の透明導電性膜を有する成型
物の製造法。 3 透明導電性膜が酸化インジウム又は酸化イン
ジウムと酸化錫の膜である特許請求の範囲第1項
記載の透明導電性膜を有する成型物の製造法。
[Claims] 1. When producing a molded product having a transparent conductive film of a metal or metal low oxide coated on the surface of the molded product, the oxidation can be carried out by silent discharge in a normal pressure gas phase containing oxygen or A method for producing a molded article having a transparent conductive film, characterized in that the method is carried out by bringing the coating film into contact with an oxygen atmosphere activated by corona discharge. 2. The coating film is a film formed from one or more metals and/or low oxides of metals selected from the group consisting of tin, indium, titanium, zirconium metals, and low oxides of these metals. A method for producing a molded article having a transparent conductive film according to claim 1. 3. The method for producing a molded article having a transparent conductive film according to claim 1, wherein the transparent conductive film is indium oxide or a film of indium oxide and tin oxide.
JP1770177A 1977-02-22 1977-02-22 Manufacture of mold with transparent electrocoductive membrane Granted JPS53102881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1770177A JPS53102881A (en) 1977-02-22 1977-02-22 Manufacture of mold with transparent electrocoductive membrane

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1770177A JPS53102881A (en) 1977-02-22 1977-02-22 Manufacture of mold with transparent electrocoductive membrane

Publications (2)

Publication Number Publication Date
JPS53102881A JPS53102881A (en) 1978-09-07
JPS6135268B2 true JPS6135268B2 (en) 1986-08-12

Family

ID=11951081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1770177A Granted JPS53102881A (en) 1977-02-22 1977-02-22 Manufacture of mold with transparent electrocoductive membrane

Country Status (1)

Country Link
JP (1) JPS53102881A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0473659U (en) * 1990-11-07 1992-06-29

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140581B (en) * 1983-05-23 1987-03-18 American Optical Corp Anti-static and/or anti-reflective abrasion-resistant ophthalmic lenses

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0473659U (en) * 1990-11-07 1992-06-29

Also Published As

Publication number Publication date
JPS53102881A (en) 1978-09-07

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