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JPS6136290B2 - - Google Patents
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JPS6136290B2 - - Google Patents

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Publication number
JPS6136290B2
JPS6136290B2 JP13880678A JP13880678A JPS6136290B2 JP S6136290 B2 JPS6136290 B2 JP S6136290B2 JP 13880678 A JP13880678 A JP 13880678A JP 13880678 A JP13880678 A JP 13880678A JP S6136290 B2 JPS6136290 B2 JP S6136290B2
Authority
JP
Japan
Prior art keywords
film
disk
magnetic
target
magnetic disk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13880678A
Other languages
Japanese (ja)
Other versions
JPS5567942A (en
Inventor
Masaki Shinohara
Koichi Makino
Katsuhiko Nakagawa
Wakatake Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13880678A priority Critical patent/JPS5567942A/en
Publication of JPS5567942A publication Critical patent/JPS5567942A/en
Publication of JPS6136290B2 publication Critical patent/JPS6136290B2/ja
Granted legal-status Critical Current

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  • Paints Or Removers (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Description

【発明の詳細な説明】 本発明は磁気デイスク装置、特に、磁気デイス
ク及びその製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic disk device, and particularly to a magnetic disk and a method for manufacturing the same.

現在、磁気デイスク装置における記録密度の向
上及び書き込み読み出し速度の向上が急速に進め
られている。そして、高密度記録化のためにビツ
ト密度(BPI)及びトラツク密度(TPI)の向上
が必要であり、さらに次のような関連技術の改良
が行なわれている。すなわち、(1)記録媒体の磁気
特性、(2)磁気ヘツドの書き込み読み出し特性、(3)
記録媒体と磁気ヘツドとの微小間隙を保持する技
術、(4)記録トラツクへの磁気ヘツドの正確な位置
決め技術、(5)記録再生方式を含めた書き込み/読
み出し回路などである。
At present, rapid progress is being made in improving the recording density and writing/reading speed of magnetic disk devices. In order to achieve high-density recording, it is necessary to improve bit density (BPI) and track density (TPI), and the following related technologies have been improved. Namely, (1) the magnetic properties of the recording medium, (2) the write/read characteristics of the magnetic head, and (3)
These include technology for maintaining a minute gap between the recording medium and the magnetic head, (4) technology for accurately positioning the magnetic head on the recording track, and (5) write/read circuits including recording and reproducing methods.

磁気デイスクにおいては、デイスクが高速回転
してデイスク板上の空気の表面流によつてスライ
ダ(磁気ヘツド)が浮上する。デイスク板の外側
の方が内側よりも周速が速いため磁気ヘツドの浮
上間隙も大きい。例えば、周速とヘツド浮上量と
の関係は第1図に示したようになる、そのため
に、磁気ヘツドに流す書き込み電流はデイスクの
外側で大きく、一方、内側で小さくしなければな
らない。また、磁気ヘツドに同一周波数で記録す
るので必然的に内側の方の記録密度が外側よりも
高くなる。そして、記録密度をパラメーターとし
て書き込み電流と出力との関係は第2図のように
なり、記録密度が高い程最適書き込み電流値Im
は小さくなる傾向にある。したがつて、浮上量の
関係から求められる以上にデイスクの内側は電流
を小さくする必要がある。さらに、一定の書き込
み電流ではデイスクの位置によつてO/W特性
(Over/Write特性、重ね書き特性)が第3図の
ように変化して、デイスクの外側の方が内側より
悪くなる。したがつて、従来の磁気デイスク装置
ではデイスクの適当な位置で書き込み電流を外側
の方が内側より大きくなるように変えている。そ
のために書き込み回路系が複雑となつており、ま
たデイスクの内側での出力は外側に比べ周速の比
率によるよりもさらに小さくなる。
In a magnetic disk, the disk rotates at high speed and a slider (magnetic head) floats due to the surface flow of air on the disk plate. Since the circumferential speed on the outside of the disk plate is faster than on the inside, the floating gap of the magnetic head is also larger. For example, the relationship between the circumferential speed and the flying height of the head is as shown in FIG. 1. Therefore, the write current applied to the magnetic head must be large on the outside of the disk and small on the inside. Furthermore, since recording is performed on the magnetic head at the same frequency, the recording density on the inner side is inevitably higher than on the outer side. The relationship between write current and output using recording density as a parameter is as shown in Figure 2, and the higher the recording density, the more optimal write current value Im.
tends to become smaller. Therefore, it is necessary to make the current smaller inside the disk than required from the relationship of the flying height. Furthermore, with a constant write current, the O/W characteristics (Over/Write characteristics, overwrite characteristics) change depending on the position of the disk, as shown in FIG. 3, and are worse on the outside of the disk than on the inside. Therefore, in conventional magnetic disk devices, the write current is changed at appropriate positions on the disk so that it is larger on the outside than on the inside. For this reason, the write circuit system has become complicated, and the output on the inside of the disk is even smaller than that on the outside due to the ratio of peripheral speed.

本発明の目的は、書き込み電流をデイスクの内
側及び外側で同じにできる磁気デイスクを提供す
ることであり、このことによつて書き込み回路系
が簡単になる。
It is an object of the present invention to provide a magnetic disk in which the write current can be the same on the inside and outside of the disk, thereby simplifying the write circuitry.

本発明の別の目的は、従来の磁気デイスクに比
べて内側での出力を従来より相対的に増やすこと
である。
Another object of the present invention is to relatively increase the internal output compared to conventional magnetic disks.

前述の目的が、磁気デイスクにおいて、磁気記
録媒体のCo含有酸化鉄膜のCo含有量が磁気デイ
スクの半径方向で内側から外側へ減少しており、
該デイスクの半径方向で内側の磁気記録媒体の保
磁力が外側の磁気記録媒体の保磁力よりも大きい
ことを特徴とする磁気デイスクによつて達成され
る。
The above purpose is to provide a magnetic disk in which the Co content of the Co-containing iron oxide film of the magnetic recording medium decreases from the inside to the outside in the radial direction of the magnetic disk.
This is achieved by a magnetic disk characterized in that the coercive force of the magnetic recording medium on the inner side of the disk is larger than the coercive force of the magnetic recording medium on the outer side of the disk.

本発明にしたがつてデイスクの内側磁気記録媒
体の保磁力を高めることによつて、その内側部分
の記録密度(BPI)を上げることかつ書き込み電
流を強めることが可能となり出力も大きくなる。
By increasing the coercive force of the inner magnetic recording medium of the disk according to the present invention, it is possible to increase the recording density (BPI) of the inner portion and to increase the write current, thereby increasing the output.

前述の磁気記録媒体がCoを含有したFe3O4膜又
はγFe2O3膜であることは好ましい。γFe2O3
はFe3O4膜よりも一般に保磁力が小さいが機械的
強度が高い。
It is preferable that the magnetic recording medium described above is a Co-containing Fe 3 O 4 film or γFe 2 O 3 film. γFe 2 O 3 films generally have lower coercive force than Fe 3 O 4 films, but higher mechanical strength.

さらに、磁気記録媒体の保磁力はその酸化膜中
のCo含有量によつて第4図のように変化する。
すなわち、Co含有量が多くなる程保磁力も大き
くなる。したがつて、磁気デイスクの内側の磁気
媒体中のCo含有量を外側の磁気媒体よりも高め
ることで保磁力も内側の方を高めることが可能に
なる。
Further, the coercive force of a magnetic recording medium changes as shown in FIG. 4 depending on the Co content in its oxide film.
That is, as the Co content increases, the coercive force also increases. Therefore, by increasing the Co content in the magnetic medium on the inside of the magnetic disk compared to the magnetic medium on the outside, it is possible to increase the coercive force on the inside.

また、本発明の目的は、上述したデイスクの半
径方向で磁気記録媒体の保磁力が異なる本発明の
磁気デイスクの製造方法を提供することである。
Another object of the present invention is to provide a method for manufacturing the magnetic disk of the present invention, in which the coercive force of the magnetic recording medium differs in the radial direction of the disk.

この目的が次のような製造方法によつて達成さ
れる。すなわち、Feターゲツトをスパツタリン
グしてデイスクの基板上にαFe2O3膜を形成し、
次に該αFe2O3膜を還元してFe3O4膜を形成し、
必要ならば該Fe3O4膜を酸化してγFe2O3膜を形
成する磁気デイスクの製造方法において、本発明
によると、前述のFeターゲツトをCo含有量の異
なる複数のFeターゲツトあるいはCo含有量の局
部的に異なるFeターゲツトに作り、そして、該
Feターゲツトを用いスパツタリングし、還元、
必要ならば酸化を施してデイスク半径方向でCo
含有量の異なるFe3O4膜又はγFe2O3膜を形成す
ることを特徴とする磁気デイスクの製造方法であ
る。
This objective is achieved by the following manufacturing method. That is, an αFe 2 O 3 film is formed on the disk substrate by sputtering an Fe target,
Next, reduce the αFe 2 O 3 film to form a Fe 3 O 4 film,
According to the present invention, in the method for manufacturing a magnetic disk in which the Fe 3 O 4 film is oxidized to form a γFe 2 O 3 film if necessary, the Fe target described above is replaced with a plurality of Fe targets having different Co contents or a plurality of Co-containing Fe targets. locally varying amounts of Fe target, and
Sputtering using Fe target, reduction,
If necessary, oxidize to remove Co in the radial direction of the disk.
This is a method for manufacturing a magnetic disk characterized by forming Fe 3 O 4 films or γFe 2 O 3 films having different contents.

磁気記録媒体の保磁力を同一デイスク上で変え
ることは、塗膜コーテイング法及び電着法では原
理的に不可能であるがスパツタリング法による酸
化磁性膜において可能になる。これはスパツタリ
ングに使用するFeターゲツト中のCo含有量を変
えることによつて容易に形成した酸化磁性膜中
Co含有量を変えてその保磁力を変えることがで
きるからであり、Feターゲツト中のCo含有量と
形成した酸化膜中のCo含有量は第5図に示すよ
うに完全に比例することによる。
It is impossible in principle to change the coercive force of a magnetic recording medium on the same disk using the film coating method or the electrodeposition method, but it becomes possible with the oxidized magnetic film using the sputtering method. This can be seen in the oxidized magnetic film that can be easily formed by changing the Co content in the Fe target used for sputtering.
This is because the coercive force can be changed by changing the Co content, and the Co content in the Fe target and the Co content in the formed oxide film are completely proportional as shown in FIG.

上述のスパツタリングを行なうスパツタ装置に
は、例えば、本出願人が特願昭52―085571及び52
―085572にて提案したスパツタ装置がある。そし
て、これら装置を使つてαFe2O3膜かFe3O4膜を
選択的に形成することも可能である。
For example, the present applicant has disclosed Japanese Patent Applications No. 52-085571 and No.
- There is a sputtering device proposed in 085572. It is also possible to selectively form an αFe 2 O 3 film or a Fe 3 O 4 film using these devices.

以下、本発明を実施例によつてさらに説明す
る。
The present invention will be further explained below with reference to Examples.

実施例 1 第6図のように1at%のCo含有Feターゲツト
A、2at%のCo含有FeターゲツトB及び3at%の
Co含有FeターゲツトCを14インチのデイスク基
板1に対して配置した。2×10-2Torrの50%Ar
―50%O2雰囲気中で基板1を回転させながらFe
ターゲツトA,B及びCを交互に10分間ずつ
1kWで3回(合計90分)スパツタリングして、
基板1上にαFe2O3膜(第6図中の斜線部)を
0.15μm厚で形成した。得られたαFe2O3膜を
WetH2雰囲気中300℃で還元してFe3O4膜を形成
し、さらに、該Fe3O4膜を空気中300℃で酸化し
てγFe2O3膜を形成した。このようにして得られ
たγFe2O3膜の保磁力とデイスク位置との関係を
第7図に示す。図から明らかなようにデイスクの
内側の方が外側よりも高い。そして、この得られ
たγFe2O3膜のO/W特性は書き込み電流が
70mAで第8図のようになり、一定の書き込み電
流でデイスク全体に記録を書き込むことができ
る。
Example 1 As shown in Figure 6, Fe target A containing 1 at% Co, Fe target B containing 2 at% Co, and Fe target B containing 3 at%
A Co-containing Fe target C was placed on a 14-inch disk substrate 1. 50% Ar of 2×10 -2 Torr
- Fe while rotating substrate 1 in 50% O 2 atmosphere.
Targets A, B, and C alternately for 10 minutes each.
Sputtering at 1kW 3 times (90 minutes in total),
αFe 2 O 3 film (shaded area in Figure 6) is placed on substrate 1.
It was formed with a thickness of 0.15 μm. The obtained αFe 2 O 3 film
A Fe 3 O 4 film was formed by reduction at 300° C. in a WetH 2 atmosphere, and the Fe 3 O 4 film was further oxidized in air at 300° C. to form a γFe 2 O 3 film. FIG. 7 shows the relationship between the coercive force of the γFe 2 O 3 film thus obtained and the disk position. As is clear from the figure, the inside of the disk is higher than the outside. The O/W characteristics of the obtained γFe 2 O 3 film depend on the write current.
At 70mA, the result is as shown in Figure 8, and records can be written to the entire disk with a constant write current.

実施例 2 第9図のように1at%のCo含有FeターゲツトA
と、2at%のCo含有FeターゲツトBと、3at%の
Co含有ターゲツトCとを電子ビームで溶接して
一体のFeターゲツト3を作つた。2×10-2Torr
の50%Ar―50%O2雰囲気中で実施例1と同じ基
板1を回転させながらFeターゲツト3を90分間
1kWでスパツタリングして基板1上にαFe2O3
(第9図中の斜線部)を0.15μm厚で形成した。
得られたαFe2O3膜をWetH2雰囲気中300℃で還
元し、さらに、空気中300℃で酸化してγFe2O3
膜を形成した。このようにして得られたγFe2O3
膜の保磁力とデイスク位置との関係を第10図に
示す。実施例1と同様に保磁力はデイスクの内側
の方が外側より高い。
Example 2 Fe target A containing 1 at% Co as shown in Fig. 9
, 2at% Co-containing Fe target B, and 3at% Co-containing Fe target B.
An integrated Fe target 3 was made by welding Co-containing target C with an electron beam. 2×10 -2 Torr
The Fe target 3 was heated for 90 minutes while rotating the same substrate 1 as in Example 1 in a 50% Ar-50% O 2 atmosphere.
Sputtering was performed at 1 kW to form an αFe 2 O 3 film (shaded area in FIG. 9) on the substrate 1 to a thickness of 0.15 μm.
The obtained αFe 2 O 3 film was reduced at 300 °C in WetH 2 atmosphere and further oxidized at 300 °C in air to form γFe 2 O 3.
A film was formed. γFe 2 O 3 obtained in this way
FIG. 10 shows the relationship between the coercive force of the film and the disk position. As in Example 1, the coercive force is higher on the inside of the disk than on the outside.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、磁気デイスクの回転周速とヘツド浮
上量との関係を表わす図であり、第2図は、従来
の磁気デイスクにおいて記録密度をパラメータと
したときの書き込み電流と出力との関係を表わす
図であり、第3図は、従来の磁気デイスクにおけ
るデイスク位置によるO/W特性を表わす図であ
り、第4図は、記録媒体酸化膜のCo含有量と保
磁力との関係を表わす図であり、第5図は、Fe
ターゲツトのCo含有量と形成した記録媒体酸化
膜のCo含有量との関係を表わす図であり、第6
図は、本発明に係る磁気デイスク製造方法の実施
態様におけるCo含有Feターゲツトとデイスク基
板との位置関係を表わす図であり、第7図は、本
発明に係る磁気デイスクの記録媒体の保磁力を表
わす図であり、第8図は、本発明に係る磁気デイ
スクの記録媒体のO/W特性を表わす図であり、
第9図は、本発明に係る磁気デイスク製造方法の
実施態様におけるCo含有Feターゲツトとデイス
ク基板との位置関係を表わす図であり、及び、第
10図は、本発明に係る磁気デイスクの記録媒体
の保磁力を表わす図である。 A…1at%Co含有Feターゲツト、B…2at%Co
含有Feターゲツト、C…3at%Co含有Feターゲ
ツト、1,2…デイスク基板、3…Feターゲツ
ト。
Figure 1 is a diagram showing the relationship between the peripheral speed of rotation of a magnetic disk and the flying height of the head, and Figure 2 is a diagram showing the relationship between write current and output when recording density is taken as a parameter in a conventional magnetic disk. FIG. 3 is a diagram showing the O/W characteristics depending on the disk position in a conventional magnetic disk, and FIG. 4 is a diagram showing the relationship between the Co content of the recording medium oxide film and the coercive force. , and Fig. 5 shows Fe
FIG. 6 is a diagram showing the relationship between the Co content of the target and the Co content of the formed recording medium oxide film;
The figure shows the positional relationship between the Co-containing Fe target and the disk substrate in an embodiment of the magnetic disk manufacturing method according to the present invention, and FIG. 7 shows the coercive force of the recording medium of the magnetic disk according to the present invention. FIG. 8 is a diagram showing O/W characteristics of a recording medium of a magnetic disk according to the present invention,
FIG. 9 is a diagram showing the positional relationship between the Co-containing Fe target and the disk substrate in an embodiment of the magnetic disk manufacturing method according to the present invention, and FIG. 10 is a diagram showing the recording medium of the magnetic disk according to the present invention. FIG. A...Fe target containing 1at%Co, B...2at%Co
Containing Fe target, C...Fe target containing 3 at% Co, 1, 2... Disk substrate, 3... Fe target.

Claims (1)

【特許請求の範囲】 1 磁気デイスクにおいて、磁気記録媒体のCo
含有酸化鉄膜のCo含有量が前記磁気デイスクの
半径方向で内側から外側へ減少しており、該デイ
スクの半径方向で内側の磁気記録媒体の保磁力が
外側の磁気記録媒体の保磁力よりも大きいことを
特徴とする磁気デイスク。 2 前記磁気記録媒体がCo含有Fe3O4膜であるこ
とを特徴とする特許請求の範囲第1項記載の磁気
デイスク。 3 前記磁気記録媒体がCo含有γFe2O3膜である
ことを特徴とする特許請求の範囲第1項記載の磁
気デイスク。 4 Feターゲツトをスパツタリングしてデイス
クの基板上にαFe2O3膜を形成し、次に該Fe2O3
膜を還元してFe3O4膜を形成する磁気デイスクの
製造方法において、Co含有量の異なる複数の前
記FeターゲツトあるいはCo含有量が局部的に異
なるFeターゲツトを作り、そして、該Feターゲ
ツトを用いて前記スパツタリング及び還元を施し
てデイスク半径方向でCo含有量の異なる前記
Fe3O4膜を前記基板上に形成することを特徴とす
る磁気デイスクの製造方法。 5 Feターゲツトをスパツタリングしてデイス
クの基板上にαFe2O3膜を形成し、該αFe2O3
を還元してFe3O4膜を形成し、次に該Fe3O4膜を
酸化してγFe2O3膜を形成する磁気デイスクの製
造方法において、前記FeターゲツトをCo含有量
の異なる複数のFeターゲツトあるいはCo含有量
が局部的に異なるFeターゲツトに作り、そし
て、該Feターゲツトを用い前記スパツタリン
グ、還元及び酸化を施してデイスク半径方向で
Co含有量の異なる前記γFe2O3膜を前記基板上に
形成することを特徴とする磁気デイスクの製造方
法。
[Claims] 1. In a magnetic disk, Co of the magnetic recording medium
The Co content of the iron oxide film decreases from the inside to the outside in the radial direction of the magnetic disk, and the coercive force of the inner magnetic recording medium is greater than the coercive force of the outer magnetic recording medium in the radial direction of the disk. A magnetic disk characterized by its large size. 2. The magnetic disk according to claim 1, wherein the magnetic recording medium is a Co-containing Fe 3 O 4 film. 3. The magnetic disk according to claim 1, wherein the magnetic recording medium is a Co-containing γFe 2 O 3 film. 4 Sputtering an Fe target to form an αFe 2 O 3 film on the disk substrate, and then sputtering the Fe 2 O 3
In a method for manufacturing a magnetic disk in which a Fe 3 O 4 film is formed by reducing a film, a plurality of Fe targets having different Co contents or Fe targets having locally different Co contents are prepared, and the Fe targets are The above-mentioned sputtering and reduction are performed using
A method for manufacturing a magnetic disk, comprising forming an Fe 3 O 4 film on the substrate. 5 Sputter the Fe target to form an αFe 2 O 3 film on the disk substrate, reduce the αFe 2 O 3 film to form an Fe 3 O 4 film, and then oxidize the Fe 3 O 4 film. In the method for manufacturing a magnetic disk in which a γFe 2 O 3 film is formed by forming a γFe 2 O 3 film, the Fe target is made into a plurality of Fe targets having different Co contents or Fe targets having locally different Co contents, and the Fe target is using the sputtering, reduction and oxidation in the disk radial direction.
A method for manufacturing a magnetic disk, characterized in that the γFe 2 O 3 films having different Co contents are formed on the substrate.
JP13880678A 1978-11-13 1978-11-13 Magnetic disk and its manufacture Granted JPS5567942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13880678A JPS5567942A (en) 1978-11-13 1978-11-13 Magnetic disk and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13880678A JPS5567942A (en) 1978-11-13 1978-11-13 Magnetic disk and its manufacture

Publications (2)

Publication Number Publication Date
JPS5567942A JPS5567942A (en) 1980-05-22
JPS6136290B2 true JPS6136290B2 (en) 1986-08-18

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JP13880678A Granted JPS5567942A (en) 1978-11-13 1978-11-13 Magnetic disk and its manufacture

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JPS5567942A (en) 1980-05-22

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