JPS6138634B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, for example, a light emitting diode. A semiconductor chip having a pn junction formed on the surface of a semiconductor substrate such as GaAlAs as a light emitting diode is used as a silicon substrate as shown in FIGS. 2a and 2b. Insulating layer 2 on top of 1
This structure is face-down bonded to a wiring board with wiring layers 3 and 4 formed through the pn junction, and light is generated by passing a forward current through the pn junction, and the light is irradiated toward the back side of the semiconductor chip. There are some that use it as a signal.

A semiconductor chip for such a light emitting diode generally has an electrode structure in which a circular electrode forming one pole of the diode is arranged at the center of the surface, and a ring-shaped electrode forming the other pole is arranged at the periphery. Therefore, as shown in FIG. 2a, the wiring board also has a circular wiring layer 3 in the central part corresponding to the circular electrode of the semiconductor chip, and a ring-shaped wiring layer 4 corresponding to the ring-shaped electrode in the peripheral part. It has an arranged structure. A disqualified part 5 is provided in a part of the ring-shaped wiring layer 4, and a wiring layer 3b connecting the central circular wiring layer 3 and its terminal part 3a is passed through the disqualified part 5. Of course, in this case, the ring-shaped electrode of the semiconductor chip is also provided with a disqualified part corresponding to the disqualified part 5 of the wiring layer. Then, the surface of the semiconductor chip is opposed to the surface of the wiring board,
The face is aligned not only in the X and Y directions, but also in the rotational direction (θ direction) so that the defective part in the ring-shaped electrode of the semiconductor chip corresponds to the defective part in the ring-shaped wiring layer of the wiring board. Down bonding is performed. By the way, alignment of the semiconductor chip is not so difficult in the X and Y directions, but it is extremely difficult in the θ direction because the chip is hemispherical and the bonding surface faces downward. Therefore, defects such as short circuit between electrodes due to positional deviation in the θ direction were relatively common.

The present invention has been made to solve these problems, and an object of the present invention is to provide a semiconductor device that does not require alignment in the θ direction during face-down bonding of semiconductor chips.

One embodiment of the present invention for achieving the above object has a circular electrode (first electrode) that forms one pole of a diode at the center of the semiconductor surface, and a circular electrode that forms the other pole of the diode at a position surrounding it. A semiconductor chip having a ring-shaped electrode (second electrode), a circular second wiring layer (first conductor layer) corresponding to the circular electrode on the central surface thereof, and the above-mentioned wiring layer on the surface surrounding the semiconductor chip. It has a ring-shaped second wiring layer (second conductor) corresponding to the ring-shaped electrode, and the circular second wiring layer crosses the ring-shaped second wiring layer via an interlayer insulating film. The multilayer wiring board drawn out from the outer main surface of the ring-shaped second wiring layer is arranged to face each other and connected between the electrodes.

The present invention will be explained below with reference to Examples. Figures 1a and 1b show a light emitting diode according to an embodiment of the present invention, in which a is a plan view of a wiring board, and b is a diagram showing a state in which a semiconductor chip is attached to the wiring board.
-A sectional view.

1 is a silicon substrate; 2 is a silicon oxide (SIO ₂ ) film formed entirely on the silicon substrate 1; 6
6b constitutes a cathode electrode, 6b is a first wiring layer that constitutes an anode electrode, 7 is an interlayer insulating layer (for example, polyimide resin), 8 is a cathode electrode, 8b is a second wiring layer that is an anode electrode, and 8c is a first wiring layer. A through hole (shaded portion by broken line) between the layer wiring layer 3 and the second layer wiring layer (first conductor layer) 8, 9 is a ring-shaped wiring layer (second conductor layer) forming an anode electrode, and interlayer insulation A first layer wiring layer 6a forming a cathode electrode and a first layer wiring layer 6b forming an anode electrode via the body layer 7
It crosses with. 9a is the terminal, 10
is a light emitting diode chip, 11a is a p-type layer, 12
13 is a p ⁺ type layer, 13 is an n type layer, and 14 is an insulating film formed to protect the pn junction. Reference numeral 15 indicates a circular cathode electrode (first electrode), and reference numeral 16 indicates a ring-shaped anode electrode (second electrode) having no partial defects formed so as to surround the cathode electrode 15. Electrodes 15 and 16 of semiconductor chip 10
In order to mutually connect the wiring layers 8 and 9 of the wiring board, the semiconductor chip and the wiring board are faced to each other by face-down bonding using thermocompression bonding, and the semiconductor chip and the wiring board are simply aligned in the X and Y directions. Do it with

According to the present invention, the wiring board has a multilayer wiring structure, and the inner electrode is drawn out via the lower layer wiring that crosses the ring-shaped outer electrode via the insulating film. It is not necessary to provide a disqualified portion for drawing out the semiconductor chip, and even if face-down bonding is performed without alignment to the rotation angle θ of the semiconductor chip, the distance between the two poles will not be shot. Face-down bonding can be performed without any problem simply by positioning in the X and Y directions. Therefore, the number of man-hours required for assembling the light emitting diode is reduced and automation becomes easy.

[Brief explanation of the drawing]

Figures 1a and 1b are for explaining one embodiment of the present invention, in which a is a plan view of a wiring board for a light emitting diode, and b is an A-A view of a semiconductor chip face-down bonded to the wiring board. FIG. Figures 2 a and b are for explaining the conventional example, where a is a plan view of the wiring board and b is A-A.
FIG. DESCRIPTION OF SYMBOLS 1... Silicon substrate, 2... SIO ₂ film, 3... Circular wiring layer, 4... Ring-shaped wiring layer, 5... Disqualified part, 6a... First layer wiring layer (cathode side), 7,
6b...First wiring layer (anode side), 7...Interlayer insulator layer, 8...Second wiring layer (cathode side), 8c...Through hole, 9...Ring-shaped wiring layer (anode side) ), 10...Light emitting diode chip, 11...p layer, 12...p ⁺ layer, 13...
n/n ⁺ layer, 14... insulating film, 15... cathode electrode, 16... anode electrode.

Claims (1)

[Claims] 1. (a) A semiconductor chip having a diode formed by joining semiconductors of different conductivity types; (b) A first semiconductor chip provided on a part of the surface of the semiconductor chip and forming one pole of the diode. (c) a second electrode forming the other electrode of the diode, which is arranged on the surface of the semiconductor chip so as to surround the first electrode; (d) a part of the main surface thereof corresponds to the first electrode; and a second conductor layer provided corresponding to the second electrode and surrounding the first conductor layer. a wiring board that crosses the second electrode and extends to the outer main surface portion of the second conductor layer; A semiconductor device comprising two conductor layers connected to each other.