JPS6141863B2 - - Google Patents
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- Publication number
- JPS6141863B2 JPS6141863B2 JP57069109A JP6910982A JPS6141863B2 JP S6141863 B2 JPS6141863 B2 JP S6141863B2 JP 57069109 A JP57069109 A JP 57069109A JP 6910982 A JP6910982 A JP 6910982A JP S6141863 B2 JPS6141863 B2 JP S6141863B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- oxide
- present
- frequency
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Description
本発明は酸化バリウム(BaO)、酸化チタン
(TiO2)、酸化サマリウム(Sm2O3)および酸化ア
ルミニウム(Al2O3)の成分で構成される高周波
用誘電体磁器組成物に関するものであり、その目
的とするところは、比誘電率(εr)が大きく、
マイクロ波周波数帯において誘電体共振器とした
ときの無負荷Q(Qu)が大きく、さらに共振周
波数の温度係数(τf)が安定した値をもち、用
途に応じてその温度係数を広範囲に変化させるこ
とができる誘電体磁器を提供することにある。
近年、波長が数センチメートル以下のマイクロ
波やミリ波(以下これらをマイクロ波と総称す
る)を取扱う高周波回路の技術の進展にともな
い、この回路を小形化することが積極的に進めら
れている。
これまでは、この高周波回路には空胴共振器、
アンテナなどが使用されてきたが、これらの大き
さはマイクロ波の波長と同程度になるため、小形
化に対する障害となつていた。これを解決するた
めに、誘電率の大きい誘電体磁器を使用すること
によつて、波長そのものを短縮する方法がとられ
てきた。このような用途に適する材料としては
TiO2系のものがよく使用され、たとえばTiO2−
ZrO2−SnO2系、CaTiO3−MgTiO3−La2O3−
2TiO2系、最近ではBa(Zn1/3Ta2/3)O3−Ba
(Zn1/3Nb2/3)O3系などの誘電体磁器が知られ
ている。しかしながら、これらの材料で誘電体共
振器を作つた場合には、比誘電率が30程度と低い
ため、たとえば共振周波数が約11GHzのX帯の
誘電体共振器ではεr=30の材料を使用した場合
直径5.6mm、厚さ2.2mm程度の小さなユニツトにな
るが、周波数が下つて2GHz程度のUHF帯での使
用となると、同じεr=30の材料のときには直径
30.7mm、厚さ12.3mm程度と形状がいちぢるしく大
きくなる。ここで使用する材料の比誘電率が80程
度に大きくできれば、その大きさは直径18.8mm、
厚さ7.5mm程度と小形化することができるが、従
来の材料ではこのような要求を満足させることは
できなかつた。
本発明はこれらの欠点を改善するためになされ
たものであり、比誘電率と無負荷Qの向上と共振
周波数の温度係数が安定した値をもち、用途に応
じてこの温度係数を広範囲に変化させうる誘電体
磁器を提供することを目的とするものである。
発明者らは、前記の要望をみたす材料について
種々検討した結果、xBaO−yTiO2−zSm2O3で表
わされる組成において、モル百分率で5≦x≦
23、57≦y≦82.5、2.5≦z≦37.5、x+y+z=
100の範囲にある主成分に対して、Al2O3が3重
量%を超えない量だけ添加含有されている組成の
磁器がすぐれた高周波用誘電体磁器になることを
見出した。
主成分組成の範囲を限定した理由を説明する
と、BaO量(x)が23モル%より多いあるいは
TiO2量(y)が57モル%未満あるいはSm2O3量
(z)が25モル%未満になると、磁器の焼結が困
難となり、無負荷Qが低下して測定不能となるた
めである。また、xが5モル%未満あるいはzが
37.5モル%より多くなると、磁器の焼結が不安定
となるとともに、無負荷Qが低下して測定不能と
なり、また、yが82.5モル%以上になると、磁器
の焼結が不安定となるとともに、温度特性の変化
がいちぢるしく大きくなるために本発明の範囲か
ら除かれる。
また、副成分のAl2O3の添加については、添加
量の増加とともに無負荷Qを大きくすることがで
き、また温度特性を変化させることができるが、
3重量%を超えて添加含有させると、焼結が不安
定となり、無負荷Qが低下するために本発明の範
囲から除かれる。
以下に、実施例にもとづいて本発明を説明す
る。
出発原料には化学的に高純度のBaCO3、
TiO2、Sm2O3およびAl2O3を所定の組成になるよ
う秤量し、めのうボールを備えたゴム内張りのボ
ールミルで純水とともに湿式混合した。この混合
物をボールミルからとり出して乾燥したのち、空
気中において900℃の温度で2時間仮焼した。仮
焼物は純水とともに前記のボールミル中で湿式粉
砕した。粉砕泥しようを脱水乾燥したのち、粉末
にバインダーとして濃度3%のポリビニールアル
コール溶液を8重量%添加して均質としたのち、
32メツシユのふるいを通して整粒した。整粒粉体
は金型と油圧プレスを用いて成形圧力800Kg/cm2で
直径20mm、厚さ約8mmの円板に成形した。成形体
は高純度のアルミナさや鉢の中に入れ、組成に応
じて空気中1250℃〜1550℃の範囲内の温度で1〜
2時間保持して焼成し、表に示す配合組成の誘電
体磁器を得た。この磁器素子を使用して誘電体共
振器法による測定から共振周波数と無負荷Qと比
誘電率を求めた。共振周波数の温度依存性は−30
℃から70℃の範囲で測定し温度係数τfを求め
た。共振周波数は2〜4GHzであつた。それらの
実験結果を表に示す。なお、表において*印した
試料は本発明の範囲外の比較例であり、これ以外
の試料が本発明の範囲内の実施例である。
The present invention relates to a high-frequency dielectric ceramic composition composed of barium oxide (BaO), titanium oxide (TiO 2 ), samarium oxide (Sm 2 O 3 ), and aluminum oxide (Al 2 O 3 ). , the purpose is to have a large relative dielectric constant (ε r ),
In the microwave frequency band, the unloaded Q (Q u ) when used as a dielectric resonator is large, and the temperature coefficient (τ f ) of the resonant frequency has a stable value, and the temperature coefficient can be varied over a wide range depending on the application. The object of the present invention is to provide a dielectric ceramic that can be changed. In recent years, with advances in technology for high-frequency circuits that handle microwaves and millimeter waves (hereinafter referred to collectively as microwaves) with wavelengths of several centimeters or less, efforts are being made to miniaturize these circuits. . Until now, this high-frequency circuit used cavity resonators,
Antennas have been used, but their size is comparable to the wavelength of microwaves, which has been an obstacle to miniaturization. In order to solve this problem, a method has been taken to shorten the wavelength itself by using dielectric ceramics with a high dielectric constant. Materials suitable for this kind of use are
TiO 2 -based materials are often used, such as TiO 2 −
ZrO 2 −SnO 2 system, CaTiO 3 −MgTiO 3 −La 2 O 3 −
2TiO 2 series, recently Ba(Zn 1/3 Ta 2/3 )O 3 −Ba
Dielectric ceramics such as (Zn 1/3 Nb 2/3 )O 3 are known. However, when making a dielectric resonator using these materials, the dielectric constant is as low as about 30, so for example, a material with ε r = 30 is used for an X-band dielectric resonator with a resonance frequency of about 11 GHz. In this case, the unit will be small with a diameter of 5.6 mm and a thickness of about 2.2 mm, but if the frequency is lowered and it is used in the UHF band of about 2 GHz, the diameter will be reduced for the same material with ε r = 30.
The size is significantly larger at 30.7mm and the thickness is about 12.3mm. If the dielectric constant of the material used here can be increased to around 80, the size will be 18.8 mm in diameter,
Although it can be made smaller with a thickness of approximately 7.5 mm, it has not been possible to satisfy such requirements with conventional materials. The present invention has been made to improve these drawbacks, and has improved relative dielectric constant and no-load Q, has a stable temperature coefficient of resonance frequency, and can vary this temperature coefficient over a wide range depending on the application. The object of the present invention is to provide dielectric ceramics that can be used in various ways. As a result of various studies on materials that meet the above requirements, the inventors found that in the composition represented by xBaO−yTiO 2 −zSm 2 O 3 , 5≦x≦ in molar percentage.
23, 57≦y≦82.5, 2.5≦z≦37.5, x+y+z=
It has been found that porcelain having a composition in which Al 2 O 3 is added in an amount not exceeding 3% by weight with respect to the main components in the range of 100 is an excellent dielectric porcelain for high frequency use. The reason for limiting the range of the main component composition is that the amount of BaO (x) is more than 23 mol% or
This is because if the amount of TiO 2 (y) is less than 57 mol% or the amount of Sm 2 O 3 (z) is less than 25 mol%, it becomes difficult to sinter the porcelain, and the no-load Q decreases, making it impossible to measure. . In addition, x is less than 5 mol% or z is
If it exceeds 37.5 mol%, the sintering of the porcelain becomes unstable and the no-load Q decreases, making it impossible to measure.If y exceeds 82.5 mol%, the sintering of the porcelain becomes unstable and However, since the change in temperature characteristics becomes significantly large, it is excluded from the scope of the present invention. Furthermore, with regard to the addition of Al 2 O 3 as a subcomponent, as the amount added increases, the no-load Q can be increased and the temperature characteristics can be changed;
When added in an amount exceeding 3% by weight, sintering becomes unstable and the no-load Q decreases, so it is excluded from the scope of the present invention. The present invention will be explained below based on examples. Starting materials include chemically highly purified BaCO 3 ,
TiO 2 , Sm 2 O 3 and Al 2 O 3 were weighed to give a predetermined composition and wet-mixed with pure water in a rubber-lined ball mill equipped with an agate ball. This mixture was taken out from the ball mill, dried, and then calcined in air at a temperature of 900° C. for 2 hours. The calcined product was wet-milled together with pure water in the ball mill described above. After dehydrating and drying the crushed slurry, 8% by weight of a 3% concentration polyvinyl alcohol solution was added to the powder as a binder to make it homogeneous.
The grains were sized through a 32 mesh sieve. The sized powder was molded into a disk with a diameter of 20 mm and a thickness of about 8 mm using a mold and a hydraulic press at a molding pressure of 800 kg/cm 2 . The molded body is placed in a high-purity alumina pot and heated in air at a temperature ranging from 1250℃ to 1550℃ depending on the composition.
The mixture was held for 2 hours and fired to obtain dielectric porcelain having the composition shown in the table. Using this ceramic element, the resonant frequency, no-load Q, and relative dielectric constant were determined from measurements using the dielectric resonator method. The temperature dependence of the resonant frequency is −30
The temperature coefficient τ f was determined by measuring in the range from ℃ to 70℃. The resonant frequency was between 2 and 4 GHz. The experimental results are shown in the table. Note that the samples marked with * in the table are comparative examples outside the scope of the present invention, and the other samples are examples within the scope of the present invention.
【表】【table】
【表】
表から明らかなように、本発明の範囲内の誘電
体磁器では、比誘電率を大きく保ちながら、無負
荷Qを大きくすることができる。さらに、本発明
の誘電体磁器は安定した温度特性を示すので、発
振器や共振器などの温度依存性を安定化するのに
有用なものであり、比誘電率が大きいことから
UEF帯での使用に適し、小形で高性能の電子回
路部品を作ることができる。また、材料組成を変
えることによつて広い範囲でτfの値を選択でき
るので、誘電体共振器を組立てたとき、周囲の金
属板による温度特性に及ぼす影響をなくする温度
補償作用をもたせることができる。さらに、本発
明の誘電体磁器組成物は、誘電体共振器のみなら
ずマイクロ波用の基板や誘電体調整棒などにも有
用な素材を提供することができ、工業的に利用価
値の大きいものである。[Table] As is clear from the table, in the dielectric ceramic within the scope of the present invention, the no-load Q can be increased while keeping the relative dielectric constant high. Furthermore, since the dielectric ceramic of the present invention exhibits stable temperature characteristics, it is useful for stabilizing the temperature dependence of oscillators and resonators.
Suitable for use in the UEF band, it is possible to create small, high-performance electronic circuit components. Furthermore, since the value of τ f can be selected within a wide range by changing the material composition, when the dielectric resonator is assembled, it can have a temperature compensation effect that eliminates the influence of the surrounding metal plates on the temperature characteristics. I can do it. Furthermore, the dielectric ceramic composition of the present invention can provide a material useful not only for dielectric resonators but also for microwave substrates, dielectric adjustment rods, etc., and has great industrial utility value. It is.
Claims (1)
と酸化アルミニウムからなる誘電体磁器で、その
主成分組成式をxBaO−yTiO2−zSm2O3と表わし
たとき、x、y、zがモル百分率で5≦x≦23、
57≦y≦82.5、2.5≦z≦37.5、x+y+z=100
の範囲にあり、この主成分に対してAl2O3が3重
量%を超えない量だけ添加含有されていることを
特徴とする誘電体磁器組成物。1 Dielectric porcelain made of barium oxide, titanium oxide, samarium oxide, and aluminum oxide, whose main component composition formula is expressed as xBaO−yTiO 2 −zSm 2 O 3 , where x, y, and z are 5≦ in mole percentage. x≦23,
57≦y≦82.5, 2.5≦z≦37.5, x+y+z=100
1. A dielectric ceramic composition characterized in that Al 2 O 3 is added in an amount not exceeding 3% by weight based on the main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57069109A JPS58185482A (en) | 1982-04-23 | 1982-04-23 | Dielectric ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57069109A JPS58185482A (en) | 1982-04-23 | 1982-04-23 | Dielectric ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58185482A JPS58185482A (en) | 1983-10-29 |
| JPS6141863B2 true JPS6141863B2 (en) | 1986-09-18 |
Family
ID=13393129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57069109A Granted JPS58185482A (en) | 1982-04-23 | 1982-04-23 | Dielectric ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58185482A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0785363B2 (en) * | 1985-07-15 | 1995-09-13 | 沖電気工業株式会社 | Microwave dielectric ceramics |
| JP2501649B2 (en) * | 1989-12-20 | 1996-05-29 | 沖電気工業株式会社 | Microwave dielectric ceramics |
| EP0873979B1 (en) * | 1997-04-24 | 2003-10-15 | Ngk Spark Plug Co., Ltd | Dielectric material and process for producing the same |
-
1982
- 1982-04-23 JP JP57069109A patent/JPS58185482A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58185482A (en) | 1983-10-29 |
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