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JPS6348131B2 - - Google Patents
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JPS6348131B2 - - Google Patents

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Publication number
JPS6348131B2
JPS6348131B2 JP58070389A JP7038983A JPS6348131B2 JP S6348131 B2 JPS6348131 B2 JP S6348131B2 JP 58070389 A JP58070389 A JP 58070389A JP 7038983 A JP7038983 A JP 7038983A JP S6348131 B2 JPS6348131 B2 JP S6348131B2
Authority
JP
Japan
Prior art keywords
mol
dielectric
present
oxide
dielectric constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58070389A
Other languages
Japanese (ja)
Other versions
JPS59196502A (en
Inventor
Hiroshi Oochi
Yoichiro Yokoya
Junichi Kato
Masamitsu Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58070389A priority Critical patent/JPS59196502A/en
Publication of JPS59196502A publication Critical patent/JPS59196502A/en
Publication of JPS6348131B2 publication Critical patent/JPS6348131B2/ja
Granted legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

産業上の利用分野 本発明は酸化バリウム(BaO)、酸化チタン
(TiO2)、酸化サマリウム(Sm2O3)および酸化
すず(SnO2)の成分で構成される高周波用誘電
体磁器組成物に関するものであり、比誘電率
(εr)が大きく、マイクロ波周波数帯において誘
電体共振器としたときの無負荷Q(Qu)が大き
く、さらに共振周波数の温度係数(τf)が安定し
た値をもち用途に応じてその温度係数を広範囲に
変化させることができる誘電体磁器を提供するこ
とにある。 従来例の構成と問題点 近年、波長が数cm以下のマイクロ波やミリ波
(以下、これらをマイクロ波と総称する)を取扱
う高周波回路技術の進展にともない、この回路を
小形化することが積極的に進められている。これ
までは、この高周波回路には空胴共振器、アンテ
ナなどが使用されてきたが、これらの大きさはマ
イクロ波の波長と同程度になるため、小形化に対
する障害となつていた。これを解決するために、
誘電率の大きい誘電体磁器を使用することによつ
て、波長そのものを短縮する方法がとられてき
た。このような用途に適する材料としてはTiO2
系のものがよく使用され、たとえばTiO2−ZrO2
−SnO2系、CaTiO3−MgTiO3−La2O3−2TiO2
系、最近ではBa(Zn1/3Ta2/3)O3−Ba(Zn1/3
Nb2/3)O3系などの誘電体磁器が知られている。
しかしながら、これらの材料で誘電体共振器を作
つた場合には、比誘電率が30程度と低いため、た
とえば共振周波数が約11GHzのX帯の誘電体共振
器ではεr=30の材料を使用したとき直径5.6mm、
厚さ2.2mm程度の小さなユニツトになるが、周波
数が下つて2GHz程度のUHF帯での使用となる
と、同じεr=30の材料のときには直径30.7mm、厚
さ12.3mm程度と形状が著しく大きくなる。ここで
使用する材料の比誘電率が80程度に大きくできれ
ば、その大きさは直径18.8mm、厚さ7.5mm程度と
小形化することができるが、従来の材料ではこの
ような要求を満足させることはできなかつた。 発明の目的 本発明は上記の欠点を改善するためになされた
ものであり、比誘電率と無負荷Qの向上と共振周
波数の温度係数が安定した値をもち、用途に応じ
てこの温度係数を広範囲に変化させうる誘電体磁
器を提供しようとするものである。 発明の構成 本発明は、xBaO−yTiO2−zSm2O3で表わさ
れる組成において、5≦x≦23(モル%)、57≦y
≦82.5(モル%)、2.5≦z≦37.5(モル%)、x+y
+z=100(モル%)の範囲にある主成分に対して
SnO2が5重量%以下(ただし0重量%を除く)
添加含有されている組成の磁器であり、すぐれた
高周波用誘電体磁器になるものである。 実施例の説明 出発原料には化学的に高純度のBaCO3、TiO2
Sm2O3およびSnO2を所定の組成になるよう秤量
し、めのうボールを備えたゴム内張りのボールミ
ルで純水とともに湿式混合した。この混合物をボ
ールミルからとり出して乾燥させたのち、空気中
において900℃の温度で2時間仮焼した。仮焼物
を純水とともに前記のボールミル中で湿式粉砕し
た。粉砕泥しようを脱水乾燥させたのち、粉末に
バインダとして濃度3%のポリビニールアルコー
ル溶液を8重量%添加して均質とした。そのの
ち、32メツシユのふるいを通して整粒した。整粒
粉体は金型と油圧プレスを用いて成形圧力800
Kg/cm2で直径20mm、厚さ約8mmの円板を成形し
た。成形体は高純度のアルミナさや鉢の中に入
れ、組成に応じて空気中1220〜1550℃の範囲内の
温度で2時間保持して焼成し、表に示す配合組成
の誘電体磁器を得た。この磁器素子を使用して誘
電体共振器法による測定から共振周波数と無負荷
Qと比誘電率を求めた。共振周波数の温度依存性
は−30℃から70℃の範囲で測定し温度係数τfを求
めた。共振周波数は2〜4GHzであつた。これら
の得られた実験結果を表に示す。なお、表におい
て*印した試料は本発明の範囲外の比較例であ
り、これ以外の試料が本発明の範囲内の実施例で
ある。
FIELD OF INDUSTRIAL APPLICATION The present invention relates to a high frequency dielectric ceramic composition composed of barium oxide (BaO), titanium oxide (TiO 2 ), samarium oxide (Sm 2 O 3 ) and tin oxide (SnO 2 ). It has a large relative dielectric constant (ε r ), a large unloaded Q (Q u ) when used as a dielectric resonator in the microwave frequency band, and a stable temperature coefficient (τ f ) of the resonant frequency. The object of the present invention is to provide a dielectric ceramic having a high temperature coefficient and whose temperature coefficient can be varied over a wide range depending on the application. Configuration and problems of conventional examples In recent years, with the advancement of high-frequency circuit technology that handles microwaves and millimeter waves (hereinafter collectively referred to as microwaves) with wavelengths of several centimeters or less, there has been an active effort to miniaturize this circuit. progress is being made. Until now, cavity resonators, antennas, etc. have been used in these high-frequency circuits, but their size is comparable to the wavelength of microwaves, which has been an obstacle to miniaturization. To solve this,
A method has been taken to shorten the wavelength itself by using dielectric ceramics with a high dielectric constant. TiO 2 is a suitable material for such applications.
For example, TiO 2 −ZrO 2
−SnO 2 system, CaTiO 3 −MgTiO 3 −La 2 O 3 −2TiO 2
system, recently Ba(Zn 1/3 Ta 2/3 )O 3 −Ba(Zn 1/3
Dielectric ceramics such as Nb 2/3 ) O 3 are known.
However, when making a dielectric resonator using these materials, the dielectric constant is as low as about 30, so for example, a material with ε r = 30 is used for an X-band dielectric resonator with a resonance frequency of about 11 GHz. When the diameter is 5.6mm,
Although it is a small unit with a thickness of about 2.2 mm, when the frequency is lowered to about 2 GHz, which is the UHF band, when using the same material with ε r = 30, the size becomes significantly larger, with a diameter of 30.7 mm and a thickness of about 12.3 mm. Become. If the dielectric constant of the material used here could be increased to around 80, the size could be reduced to 18.8 mm in diameter and 7.5 mm in thickness, but conventional materials cannot satisfy these requirements. I couldn't. Purpose of the Invention The present invention has been made in order to improve the above-mentioned drawbacks, and has improved relative dielectric constant and no-load Q, and has a stable temperature coefficient of resonance frequency, and has a stable temperature coefficient according to the application. The aim is to provide dielectric ceramics that can be varied over a wide range. Structure of the Invention The present invention provides a composition represented by xBaO-yTiO 2 -zSm 2 O 3 in which 5≦x≦23 (mol%), 57≦y
≦82.5 (mol%), 2.5≦z≦37.5 (mol%), x+y
For main components in the range +z=100 (mol%)
SnO 2 is 5% by weight or less (excluding 0% by weight)
This is a porcelain with a composition that contains additives, making it an excellent dielectric porcelain for high frequency use. Description of Examples Starting materials include chemically highly purified BaCO 3 , TiO 2 ,
Sm 2 O 3 and SnO 2 were weighed to have a predetermined composition and wet mixed with pure water in a rubber-lined ball mill equipped with an agate ball. This mixture was taken out from the ball mill, dried, and then calcined in air at a temperature of 900°C for 2 hours. The calcined product was wet-milled together with pure water in the ball mill described above. After the crushed slurry was dehydrated and dried, 8% by weight of a 3% concentration polyvinyl alcohol solution was added to the powder as a binder to make it homogeneous. After that, it was sized through a 32-mesh sieve. The sized powder is molded at a pressure of 800 using a mold and hydraulic press.
A disk with a diameter of 20 mm and a thickness of approximately 8 mm was molded using Kg/cm 2 . The molded body was placed in a high-purity alumina pot and kept in the air at a temperature in the range of 1220 to 1550°C for 2 hours depending on the composition and fired to obtain dielectric porcelain with the composition shown in the table. . Using this ceramic element, the resonant frequency, no-load Q, and relative dielectric constant were determined from measurements using the dielectric resonator method. The temperature dependence of the resonance frequency was measured in the range of -30°C to 70°C, and the temperature coefficient τ f was determined. The resonant frequency was between 2 and 4 GHz. The experimental results obtained are shown in the table. Note that the samples marked with * in the table are comparative examples outside the scope of the present invention, and the other samples are examples within the scope of the present invention.

【表】 * 本発明の範囲外の比較例
表から明らかなように、本発明の範囲内の誘電
体磁器は比誘電率を大きく保ちながら無負荷Qを
大きくすることができる。また、安定した共振周
波数の温度特性を示すので、本発明の誘電体磁器
は発振器や共振器などの温度依存性を安定化する
のに有用であり、さらに比誘電率が大きいことか
らUHF帯での使用に適し、小形で高性能の電子
回路部品を作ることができる。 主成分組成の範囲を限定した理由を説明する
と、BaO量(x)が23モル%より多かつたり、
あるいはTiO2量(y)が57モル%より少なかつ
たり、Sm2O3量(z)が2.5モル%より少なかつ
たりすると、磁器の焼結が困難となり、無負荷Q
が低下して測定不能となるために、本発明の範囲
から除かれる。また、xが5モル%より少なかつ
たり、あるいはzが37.5モル%より多かつたりす
ると、磁器の焼結が不安定となるとともに、無負
荷Qが低下して測定不能となり、また、yが82.5
モル%より多くなると、磁器の焼結が不安定とな
るとともに、温度特性の変化が著しく大きくなる
ために、本発明の範囲から除かれる。 また、副成分のSnO2の添加量については、添
加量の増加とともに磁器の焼結温度を低下するこ
とができるとともに、無負荷Qを大きくすること
ができ、また温度特性を変化させることができる
が、5重量%よりも多く添加含有させると、誘電
率と無負荷Qの低下が著しくなるために、本発明
の範囲から除かれる。 発明の効果 本発明の誘電体磁器組成物はマイクロ波周波数
帯において比誘電率が大きく、無負荷Qが大き
く、さらに共振周波数の温度係数が安定した値を
示すので、発振器や共振器などの温度依存性を安
定化するのに有用である。また、比誘電率が大き
いことからUHF帯での使用に適し、小形で高性
能の電子回路部品を作ることができる。さらに、
材料の組成を変えることによつて所望の共振周波
数の温度係数を選らぶことができるので、誘電体
共振器を組立てたとき、周囲の金属板による温度
特性に及ぼす影響をなくすという温度補償作用を
もたせることができる。また、本発明の誘電体磁
器組成物は誘電体共振器のみならずマイクロ波用
の基板や誘電体調整棒などの用途にも有用な素材
を提供することができ、工業的に利用価直の大き
いものである。
[Table] *Comparative example outside the scope of the present invention As is clear from the table, the dielectric ceramic within the scope of the present invention can increase the no-load Q while maintaining a high relative dielectric constant. In addition, since the dielectric ceramic of the present invention exhibits stable temperature characteristics of the resonant frequency, it is useful for stabilizing the temperature dependence of oscillators and resonators, and furthermore, because of its large dielectric constant, it can be used in the UHF band. It is suitable for use in the production of small, high-performance electronic circuit components. The reason for limiting the range of the main component composition is that the amount of BaO (x) is more than 23 mol%,
Alternatively, if the amount of TiO 2 (y) is less than 57 mol% or the amount of Sm 2 O 3 (z) is less than 2.5 mol%, it becomes difficult to sinter the porcelain, and the no-load Q
is excluded from the scope of the present invention because it becomes unmeasurable. Furthermore, if x is less than 5 mol% or z is more than 37.5 mol%, the sintering of the porcelain becomes unstable, the no-load Q decreases and becomes unmeasurable, and y 82.5
If it exceeds mol %, the sintering of the porcelain becomes unstable and the temperature characteristics change significantly, so it is excluded from the scope of the present invention. In addition, with regard to the amount of SnO 2 added as a subcomponent, as the amount added increases, the sintering temperature of the porcelain can be lowered, the no-load Q can be increased, and the temperature characteristics can be changed. However, if it is added in an amount exceeding 5% by weight, the dielectric constant and the no-load Q will be significantly lowered, so it is excluded from the scope of the present invention. Effects of the Invention The dielectric ceramic composition of the present invention has a large dielectric constant in the microwave frequency band, a large no-load Q, and a stable temperature coefficient of the resonant frequency. Useful for stabilizing dependencies. Additionally, due to its high dielectric constant, it is suitable for use in the UHF band, and can be used to create small, high-performance electronic circuit components. moreover,
By changing the composition of the material, the temperature coefficient of the desired resonant frequency can be selected, so when a dielectric resonator is assembled, a temperature compensation effect that eliminates the influence of the surrounding metal plates on the temperature characteristics can be achieved. It can be made to stand. In addition, the dielectric ceramic composition of the present invention can provide a material useful not only for dielectric resonators but also for microwave substrates, dielectric adjustment rods, etc., and has a high industrial cost. It's big.

Claims (1)

【特許請求の範囲】[Claims] 1 酸化バリウムと酸化チタンと酸化サマリウム
と酸化すずからなる誘電体磁器で、その主成分組
成式をxBaO−yTiO2−zSm2O3と表わしたとき、
x、y、zが5≦x≦23(モル%)、57≦y≦82.5
(モル%)、2.5≦z≦37.5(モル%)、x+y+z
=100(モル%)の範囲にあり、この主成分に対し
てSnO2が5重量%以下(ただし0重量%を除く)
添加含有されていることを特徴とする誘電体磁器
組成物。
1. Dielectric porcelain consisting of barium oxide, titanium oxide, samarium oxide, and tin oxide, whose main component composition formula is expressed as xBaO−yTiO 2 −zSm 2 O 3 ,
x, y, z are 5≦x≦23 (mol%), 57≦y≦82.5
(mol%), 2.5≦z≦37.5 (mol%), x+y+z
= 100 (mol%), and SnO 2 is 5% by weight or less (excluding 0% by weight) based on this main component.
A dielectric ceramic composition characterized in that it contains an additive.
JP58070389A 1983-04-21 1983-04-21 Dielectric porcelain composition Granted JPS59196502A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58070389A JPS59196502A (en) 1983-04-21 1983-04-21 Dielectric porcelain composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58070389A JPS59196502A (en) 1983-04-21 1983-04-21 Dielectric porcelain composition

Publications (2)

Publication Number Publication Date
JPS59196502A JPS59196502A (en) 1984-11-07
JPS6348131B2 true JPS6348131B2 (en) 1988-09-27

Family

ID=13430035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58070389A Granted JPS59196502A (en) 1983-04-21 1983-04-21 Dielectric porcelain composition

Country Status (1)

Country Link
JP (1) JPS59196502A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS565376A (en) * 1979-06-21 1981-01-20 Suwa Seikosha Kk Manufacture of ceramic dielectric body
JPS5937526B2 (en) * 1980-07-01 1984-09-10 松下電器産業株式会社 dielectric magnetic composition

Also Published As

Publication number Publication date
JPS59196502A (en) 1984-11-07

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