JPS6142424B2 - - Google Patents
Info
- Publication number
- JPS6142424B2 JPS6142424B2 JP16876480A JP16876480A JPS6142424B2 JP S6142424 B2 JPS6142424 B2 JP S6142424B2 JP 16876480 A JP16876480 A JP 16876480A JP 16876480 A JP16876480 A JP 16876480A JP S6142424 B2 JPS6142424 B2 JP S6142424B2
- Authority
- JP
- Japan
- Prior art keywords
- rubber material
- wafer
- cut
- semiconductor pellets
- protective substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
Landscapes
- Formation Of Insulating Films (AREA)
- Dicing (AREA)
Description
【発明の詳細な説明】
この発明は高出力トランジスタやサイリスタ等
に用いられる半導体ペレツトの製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing semiconductor pellets used for high output transistors, thyristors, etc.
例えば、逆メサ型トランジスタの半導体ペレツ
ト(以下単にペレツトと称す)は第1図に示すよ
うにペレツト1の側断面が逆メサ状に形成され、
側壁2に露呈したP―N接合部に保護物質である
ゴム材(例えばシリコンゴム)3を被着して保護
し高耐圧化を図つている。又、E,B,Cはペレ
ツト1の表面1mと裏面1nに形成した電極層で
ある。 For example, a semiconductor pellet (hereinafter simply referred to as a pellet) for an inverted mesa transistor has a side cross section of a pellet 1 formed in an inverted mesa shape, as shown in FIG.
A rubber material (for example, silicone rubber) 3 serving as a protective substance is applied to the PN junction exposed on the side wall 2 to protect it and increase the pressure resistance. Further, E, B, and C are electrode layers formed on the front surface 1m and the back surface 1n of the pellet 1.
上記ペレツト1は1枚の半導体ウエーハ(以下
単にウエーハと称す)から複数個が一括して製造
される。この製造の一例を第2図乃至第10図に
示す各工程から説明する。即ち、まず電極形成の
完了したウエーハ4の表面4mにワツクス5を塗
布して石英製基板6に固着し、裏面4nに例えば
フオトレジスト7を塗布し、所定のパターンを露
光して露光部を除去し、窓7aを開ける(第2図
及び第3図参照)。そしてエツチングにより、窓
7aからウエーハ4にメサ溝8を形成する(第4
図参照)。このメサ溝8はウエーハ4の表面まで
達してウエーハを個々のペレツト1に分離する。
而して、各ペレツト1はワツクス5によつて固定
されウエーハ4′の形状を保つている。そしてこ
のウエーハ4′の裏面側の全域に流体状の保護物
質、例えばシリコーンゴム等のゴム材3を塗布し
てメサ溝8にゴム材3を充填する(第5図参
照)。そしてこのゴム材3を硬化させ、このウエ
ーハ4′の各ペレツト1の裏面1nに塗布された
ゴム材3及びフオトレジスト7を除去し、メサ溝
8内だけのゴム材3を残す(第6図及び第9図参
照)。次にゴム材3で複数のペレツト1を結合し
てなるウエーハ4′をワツクス5を有機溶剤で除
去することにより基板6から剥して、このウエー
ハ4′の表面、つまり各ペレツト1の表面1m側
を伸縮性のあるシート10に接着する(第7図参
照)。そして、最後にゴム材3をメサ溝8の中心
線に沿つて切断する。 A plurality of pellets 1 are manufactured at once from one semiconductor wafer (hereinafter simply referred to as a wafer). An example of this manufacturing will be explained from each step shown in FIGS. 2 to 10. That is, first, wax 5 is applied to the front surface 4m of the wafer 4 on which electrode formation has been completed, and is fixed to the quartz substrate 6. For example, a photoresist 7 is applied to the back surface 4n, a predetermined pattern is exposed, and the exposed portion is removed. Then, open the window 7a (see Figures 2 and 3). Then, by etching, a mesa groove 8 is formed in the wafer 4 from the window 7a (the fourth
(see figure). This mesa groove 8 reaches the surface of the wafer 4 and separates the wafer into individual pellets 1.
Thus, each pellet 1 is fixed by the wax 5 and maintains the shape of the wafer 4'. Then, a fluid protective substance, for example, a rubber material 3 such as silicone rubber, is applied to the entire rear surface side of the wafer 4', and the mesa groove 8 is filled with the rubber material 3 (see FIG. 5). Then, this rubber material 3 is cured, and the rubber material 3 and photoresist 7 applied to the back surface 1n of each pellet 1 of this wafer 4' are removed, leaving the rubber material 3 only in the mesa groove 8 (Fig. 6). and Figure 9). Next, the wafer 4' formed by bonding a plurality of pellets 1 with the rubber material 3 is peeled off from the substrate 6 by removing the wax 5 with an organic solvent, and the surface of the wafer 4', that is, the 1 m side of the surface of each pellet 1 is removed. is adhered to the elastic sheet 10 (see FIG. 7). Finally, the rubber material 3 is cut along the center line of the mesa groove 8.
このゴム材3の切断は第8図及び第10図に示
す要領で行われていた。まず第7図で示すウエー
ハ4′のシート10をブラケツトなステージ11
上に固定してウエーハ4′をフラツトな状態に位
置決めしておく。そして、ウエーハ4′の上方か
らカミソリ刃のような鋭利なカツター12をメサ
溝8の中心線に沿つてゴム材3に当て、カツター
12或はステージ11をメサ溝2の形成方向であ
るX方向及びY方向に水平移動させてゴム材3を
切断していた。ところがこのゴム材切断方法には
次の各問題点があつた。 The rubber material 3 was cut in the manner shown in FIGS. 8 and 10. First, the sheet 10 of the wafer 4' shown in FIG. 7 is placed on the bracket stage 11.
The wafer 4' is positioned in a flat state by being fixed at the top. Then, a sharp cutter 12 like a razor blade is applied to the rubber material 3 from above the wafer 4' along the center line of the mesa groove 8, and the cutter 12 or stage 11 is moved in the X direction, which is the direction in which the mesa groove 2 is formed. The rubber material 3 was cut by moving horizontally in the Y direction. However, this method of cutting rubber material has the following problems.
即ち、ゴム材3は硬化後ゴム特有の柔軟性や粘
着性があり、而もウエーハ4′は柔軟なシート1
0に接着された薄いものであるため、カツター1
2をゴム材3の中心線に沿つて走らせるとカツタ
ー12とゴム材3との摩擦抵抗でウエーハ4′の
被切断部周辺が動き、ゴム材3の切断面が中心線
から外れて曲ることがあつた。そのため、切断方
向が大きく外れないように常に注意しておく必要
があり、切断工程の自動化が難しかつた。又、ゴ
ム材3は被切断面がカツター12に圧着される如
くして切断されていくため、カツター12が少し
でも摩耗してくると切断時の摩擦抵抗が大きくな
つて、ゴム材3の被切断面が波状に乱れて外観不
良となつたり、被切断面に亀裂が入つたり、時に
はゴム材3が側壁2から剥離して耐圧劣下等の特
性劣化を招くことがあつた。 That is, the rubber material 3 has flexibility and adhesiveness peculiar to rubber after curing, and the wafer 4' is a flexible sheet 1.
Since it is a thin piece glued to cutter 1,
2 along the center line of the rubber material 3, the area around the cut portion of the wafer 4' moves due to the frictional resistance between the cutter 12 and the rubber material 3, and the cut surface of the rubber material 3 deviates from the center line and bends. Something happened. Therefore, it is necessary to always be careful not to deviate greatly from the cutting direction, making it difficult to automate the cutting process. Furthermore, since the rubber material 3 is cut by pressing the surface to be cut against the cutter 12, if the cutter 12 becomes even slightly worn, the frictional resistance during cutting increases, causing the rubber material 3 to be cut. The cut surface may become wavy and have a poor appearance, cracks may appear on the cut surface, and sometimes the rubber material 3 may peel off from the side wall 2, resulting in deterioration of characteristics such as a decrease in pressure resistance.
本発明は上記従来の問題点に鑑み、これを解決
したもので、以下本発明を例えば上記ペレツト1
の製造に適用して説明すると次の通りである。 The present invention has been made in view of the above-mentioned conventional problems and has solved them.
The explanation is as follows when applied to the production of.
本発明の特徴の1つは保護物質として紫外線硬
化型のもの、例えばシリコーンゴムに紫外線の照
射で硬化する硬化剤を混入したゴム材を使用し、
第5図に示す工程まで従来と同一の方法で製造す
る(第11図参照)。但し、第5図と同一符号の
ものは同一内容のものを示し、13は上述した紫
外線硬化型のゴム材、14はこのゴム材13で複
数のペレツト1が連結された状態のウエーハであ
る。而して、本発明はこのゴム材13を次の要領
で切断してウエーハ14から個々のペレツト1を
分割する。 One of the features of the present invention is that a UV-curable material is used as the protective material, for example, a rubber material made of silicone rubber mixed with a curing agent that hardens when irradiated with UV light.
It is manufactured by the same conventional method up to the steps shown in FIG. 5 (see FIG. 11). However, the same reference numerals as in FIG. 5 indicate the same contents, 13 is the above-mentioned ultraviolet curable rubber material, and 14 is a wafer in which a plurality of pellets 1 are connected by the rubber material 13. According to the present invention, the rubber material 13 is cut in the following manner to separate individual pellets 1 from the wafer 14.
まずゴム材13を部分的に硬化させる。この硬
化は第12図及び第15図に示すように基板6上
のウエーハ14の裏面にゴム材13の表面中間部
13aだけを被うメツシユ状マスク15を位置決
め載置する。そしてウエーハ14の上方からウエ
ーハ14の面と直交して平行な紫外線16を照射
する。すると紫外線16はマスク15で隠れたゴ
ム材13の中間部13aを除くウエーハ裏面全面
に照射され、ゴム材13の両側部13bのみがこ
の紫外線照射で硬化し、中間部13aは未硬化の
まま残る。このようにゴム材13の硬化が完了す
るとフオトレジスト7及び表面のゴム材13を除
去し、さらにワツクス5を除去して基板6からウ
エーハ14を剥し、ウエーハ14の表面に第13
図に示すように伸縮性シート17を接着する。そ
してこのシート17を放射状に引き伸ばすと各ペ
レツト1は互いに離れる方向に動き、この時未硬
化状態のゴム材13の中間部13aから分断さ
れ、第14図に示すようにウエーハ14は個々の
ペレツトに分割される。このようにするとカツタ
ーによる切断工程が省略でき、従つてカツターの
切断に伴う各種トラブルが皆無となる。 First, the rubber material 13 is partially cured. For this curing, as shown in FIGS. 12 and 15, a mesh-like mask 15 is positioned and placed on the back surface of the wafer 14 on the substrate 6, covering only the middle surface portion 13a of the rubber material 13. Then, ultraviolet rays 16 are irradiated from above the wafer 14 in a direction perpendicular to and parallel to the surface of the wafer 14. Then, the ultraviolet rays 16 are irradiated to the entire back surface of the wafer except for the middle part 13a of the rubber material 13 that is hidden by the mask 15, and only the both side parts 13b of the rubber material 13 are cured by this ultraviolet irradiation, and the middle part 13a remains uncured. . When the hardening of the rubber material 13 is completed in this way, the photoresist 7 and the rubber material 13 on the surface are removed, and the wax 5 is also removed and the wafer 14 is peeled off from the substrate 6.
A stretchable sheet 17 is adhered as shown in the figure. When this sheet 17 is stretched radially, the pellets 1 move away from each other, and at this time, the uncured rubber material 13 is separated from the intermediate portion 13a, and the wafer 14 is separated into individual pellets as shown in FIG. be divided. In this way, the cutting process using a cutter can be omitted, and various troubles associated with cutting with a cutter can therefore be eliminated.
尚、マスク15でゴム材13を部分的に硬化さ
せて後、マスク15を取り除き、再びゴム材13
の全体に紫外線16を照射してゴム材13の中間
部13aも若干硬化させておいて、ウエーハ14
をシート17に接着してからこのゴム材13の中
間部13aをカツターで切断することも可能であ
る。この場合はゴム材13の中間部13aが半硬
化の状態であるからカツターの入りが易く、スム
ーズで確実な切断が可能である。 Note that after partially curing the rubber material 13 with the mask 15, the mask 15 is removed and the rubber material 13 is cured again.
The entire surface of the wafer 14 is irradiated with ultraviolet rays 16 to slightly harden the intermediate portion 13a of the rubber material 13.
It is also possible to adhere the rubber material 13 to the sheet 17 and then cut the intermediate portion 13a of the rubber material 13 with a cutter. In this case, since the intermediate portion 13a of the rubber material 13 is in a semi-hardened state, it is easy to insert the cutter into the rubber material 13, and smooth and reliable cutting is possible.
以上説明したように、本発明によればゴム材の
切断部分が未硬化の状態であるので切断が簡単で
而も確実に行え、外観の良好な特性の安定した半
導体ペレツトが製造できる。 As explained above, according to the present invention, since the cut portion of the rubber material is in an uncured state, cutting can be performed easily and reliably, and semiconductor pellets with good appearance and stable characteristics can be produced.
第1図はメサ型半導体ペレツトの一例を示す断
面図、第2図乃至第10図は従来のメサ型半導体
ペレツトの製造方法を説明する図面、第11図乃
至第14図は本発明を説明する各工程での断面
図、第15図は第12図の一部平面図である。
1……半導体ペレツト、13……紫外線硬化型
保護物質、16……紫外線。
FIG. 1 is a sectional view showing an example of a mesa semiconductor pellet, FIGS. 2 to 10 are diagrams explaining a conventional method for manufacturing a mesa semiconductor pellet, and FIGS. 11 to 14 are diagrams explaining the present invention. 15 is a partial plan view of FIG. 12. 1... Semiconductor pellet, 13... Ultraviolet curing protective substance, 16... Ultraviolet light.
Claims (1)
ト間に紫外線硬化型の保護物質を充填して半導体
ペレツト連結一体化する工程と、上記半導体ペレ
ツト間の保護物質の中間部をマスクして紫外線を
照射する工程と、保護物質によつて連結一体化し
た半導体ペレツトに外力を加えて未硬化状態の保
護物質の中間部から分割し、個々の半導体ペレツ
トを得る工程とを含むことを特徴とする半導体ペ
レツトの製造方法。1 A step of filling a plurality of semiconductor pellets arranged at regular intervals with an ultraviolet curable protective substance to connect and integrate the semiconductor pellets, and irradiating ultraviolet rays while masking the intermediate part of the protective substance between the semiconductor pellets. and a step of applying an external force to the semiconductor pellets connected and integrated by the protective substance to separate them from the middle part of the uncured protective substance to obtain individual semiconductor pellets. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16876480A JPS5792848A (en) | 1980-11-29 | 1980-11-29 | Manufacture of semiconductor pellet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16876480A JPS5792848A (en) | 1980-11-29 | 1980-11-29 | Manufacture of semiconductor pellet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5792848A JPS5792848A (en) | 1982-06-09 |
| JPS6142424B2 true JPS6142424B2 (en) | 1986-09-20 |
Family
ID=15874005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16876480A Granted JPS5792848A (en) | 1980-11-29 | 1980-11-29 | Manufacture of semiconductor pellet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5792848A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5659033B2 (en) * | 2011-02-04 | 2015-01-28 | 株式会社東芝 | Manufacturing method of semiconductor device |
-
1980
- 1980-11-29 JP JP16876480A patent/JPS5792848A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5792848A (en) | 1982-06-09 |
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