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JPS6145375B2 - - Google Patents
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JPS6145375B2 - - Google Patents

Info

Publication number
JPS6145375B2
JPS6145375B2 JP55187233A JP18723380A JPS6145375B2 JP S6145375 B2 JPS6145375 B2 JP S6145375B2 JP 55187233 A JP55187233 A JP 55187233A JP 18723380 A JP18723380 A JP 18723380A JP S6145375 B2 JPS6145375 B2 JP S6145375B2
Authority
JP
Japan
Prior art keywords
pattern
shaped beam
length
point side
shot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55187233A
Other languages
Japanese (ja)
Other versions
JPS57112016A (en
Inventor
Hiroshi Yasuda
Takeari Uema
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187233A priority Critical patent/JPS57112016A/en
Publication of JPS57112016A publication Critical patent/JPS57112016A/en
Publication of JPS6145375B2 publication Critical patent/JPS6145375B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Description

【発明の詳細な説明】 本発明は電子ビーム露光方法に関し、特に可変
形状電子ビーム露光方法の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam exposure method, and more particularly to an improvement in a variable shape electron beam exposure method.

試料面上における電子ビームの投影像を所望の
形状に整形し、1シヨツト毎に該整形ビームを該
整形ビームの長きに等しいピツチで移動させて所
望のパターンを描画する従来の可変形状電子ビー
ム露光方法では、描画されたパターンは各シヨツ
ト毎のパターンのつなぎ目の部分がなめらかにな
らないという難点がある。
Conventional variable-shape electron beam exposure in which the projected image of the electron beam on the sample surface is shaped into a desired shape, and the shaped beam is moved at a pitch equal to the length of the shaped beam for each shot to draw a desired pattern. This method has the disadvantage that the drawn pattern does not have smooth joints between the patterns of each shot.

つまり第1図aに示すごとく矩形状の整形ビー
ム1のビーム強度は均一ではなく、例えばB−B
矢視部におけるビーム強度2は同図bに示すよう
に周辺部3が若干だれている。そのためビーム形
状は周辺部でぼけたものとなる。
In other words, as shown in FIG. 1a, the beam intensity of the rectangular shaped beam 1 is not uniform; for example, B-B
As for the beam intensity 2 in the direction of the arrow, the peripheral part 3 is slightly sagging as shown in FIG. Therefore, the beam shape becomes blurred at the periphery.

このような整形ビームを各シヨツト毎に端部が
オーバラツプするようにすると同図cに示すごと
くパターンの接続部4が露光過剰となつてふくみ
を生じ、逆にオーバラツプがないようにすると同
図dに示すように接続部4′が露光不足となつて
へこみを生じる。
If the end portions of such shaped beams are made to overlap for each shot, the connecting portions 4 of the pattern will be overexposed and bulged, as shown in figure c, and conversely, if there is no overlap, the pattern will become bulged, as shown in figure d. As shown in FIG. 2, the connecting portion 4' is underexposed and dented.

従来の可変形状電子ビーム露光方法では得られ
たパターンが上述のようなふくらみやへこみのな
いなめらかなものとなるよう制御することは困難
であつた。
In the conventional variable shape electron beam exposure method, it is difficult to control the resulting pattern so that it is smooth without the above-mentioned bulges and depressions.

本発明の目的は上記問題点を解消してなめらか
なパターンを描画し得る可変形状電子ビーム露光
方法を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a variable shape electron beam exposure method that can solve the above problems and draw smooth patterns.

本発明の特徴は、描画開始に当つては描画すべ
きパターンの描画始点側端部に整形ビームの描画
始点側端部を一致させ、これを固定したまま各シ
ヨツト毎に整形ビームの長さをビームの移動方向
に向けて増大し、該整形ビームの長さが当該露光
過程において使用する整形ビームの最大長さに達
した後は該最大長さの整形ビームを各シヨツト毎
に該整形ビームの最大長さより小なるピツチで移
動せしめ該整形ビームの終点側端部が描画すべき
パターンの終点側端部に到達した後は、整形ビー
ムの終点側端部を固定し各シヨツト毎に整形ビー
ムの長さを段階的に縮小し、描画すべきパターン
のすべての部分に複数シヨツトの露光を行なうこ
とにより、描画パターンの全域にわたつて略一様
な露光量を与えることにある。
A feature of the present invention is that when starting writing, the end of the shaped beam on the writing start point side is aligned with the end of the pattern to be written on the writing start point side, and while this is fixed, the length of the shaped beam is adjusted for each shot. The length of the shaped beam increases in the direction of beam movement, and after the length of the shaped beam reaches the maximum length of the shaped beam used in the exposure process, the shaped beam of the maximum length is used for each shot. After the shaping beam is moved at a pitch smaller than the maximum length and the end of the shaping beam reaches the end of the pattern to be drawn, the end of the shaping beam is fixed and the shaping beam is moved for each shot. The purpose is to provide a substantially uniform exposure amount over the entire area of the pattern to be drawn by reducing the length stepwise and exposing all parts of the pattern to be drawn with multiple shots.

以下本発明を実施例により説明する。 The present invention will be explained below with reference to Examples.

第2図は本発明の一実施例の手順を示す図で、
微小幅の長いパターン11を矩形状ビームを矢印
12の方向に順次移動させて描画する例を掲げて
説明する。なお13及び14はパターン11の描
画始点側及び終点側端部を示す。
FIG. 2 is a diagram showing the procedure of an embodiment of the present invention.
An example will be described in which a long pattern 11 with a small width is drawn by sequentially moving a rectangular beam in the direction of an arrow 12. Note that 13 and 14 indicate the ends of the pattern 11 on the drawing start point side and the end point side.

本実施例においては上記パターン11を描画す
るのに先ず図示のように小さい矩形ビーム15で
露光し、次のシヨツトは矩形ビーム16、次は矩
形ビーム17と各シヨツト毎に矩形ビームの大き
さを大きくして行く。そして当該露光過程で用い
る最大長さlを有する矩形ビーム18に至る。こ
の間矩形ビーム15〜18の始点側端部15′〜
18′はパターン11の始点側端部13の位置に
一致させたまま固定しビームの移動方向(矢印1
2の方向)に矩形ビームの長さを増大させる。矩
形ビームの長さは次のようにした。即ち第1シヨ
ツトに用いたビーム15の長さを上記最大長さl
の1/nとする。本実施例ではn=4としたので
ビーム15の長さはl/4となる。次いでビーム
16は2 l/4、ビーム17は3 l/4、ビ
ーム18はlと一定の割合で長さを増大させる。
In this embodiment, to draw the pattern 11, first exposure is performed with a small rectangular beam 15 as shown in the figure, the next shot is a rectangular beam 16, the next is a rectangular beam 17, and the size of the rectangular beam is determined for each shot. I'll make it bigger. This results in a rectangular beam 18 having a maximum length l used in the exposure process. During this time, the starting point side ends 15' of the rectangular beams 15 to 18
18' is fixed while being aligned with the position of the starting point side end 13 of the pattern 11, and the beam is moved in the direction of movement (arrow 1).
2) increases the length of the rectangular beam. The length of the rectangular beam was determined as follows. That is, the length of the beam 15 used for the first shot is the maximum length l.
Let it be 1/n of In this embodiment, since n=4, the length of the beam 15 is 1/4. Then, the length of the beam 16 is increased by 2 l/4, the length of the beam 17 is increased by 3 l/4, and the length of the beam 18 is increased at a constant rate of l.

上述のように矩形ビームの長さが最大長lに到
達した後は、ビームの長さはlに固定し各シヨツ
ト毎にビームの位置を矢印12の方向に矩形ビー
ム19,20,21,22,………、とl/4の
ピツチで移動させる。
After the length of the rectangular beam reaches the maximum length l as described above, the beam length is fixed at l and the position of the beam is changed to the rectangular beams 19, 20, 21, 22 in the direction of arrow 12 for each shot. ,...... and move it at a pitch of l/4.

以下ビームの位置を順次移動させて露光を行な
い、矩形ビーム29に至つて終点側端部23′が
パターン11の終点側端部14の位置に一致す
る。このあとは矩形ビーム24,25,26と各
シヨツト毎にビーム長さをl/4づつ縮小し、長
さl/4の矩形ビーム26を最終シヨツトとして
パターン11の全露光過程を終了する。上記ビー
ム23〜26の間は終点側端部23′〜26″の位
置をパターン11の終点側端部14に一致させた
まま固定しておく。
Thereafter, exposure is carried out by sequentially moving the position of the beam, until the rectangular beam 29 is reached, and the terminal end 23' coincides with the terminal end 14 of the pattern 11. Thereafter, the beam length is reduced by 1/4 for each shot of the rectangular beams 24, 25, and 26, and the entire exposure process of the pattern 11 is completed with the rectangular beam 26 having a length of 1/4 as the final shot. Between the beams 23 to 26, the ends 23' to 26'' of the beams 23' to 26'' are fixed so as to match the ends 14 of the pattern 11.

上述のようにして得られたパターン11は、各
シヨツトのつなぎ目を除く残りのすべての部分は
4ビツト分の露光量が与えられている。また各シ
ヨツトのつなぎ目、例えばビーム17と21の接
続部の露光量は、ビーム17と21がオーバラツ
プしている場合はビーム18,19,20の3シ
ヨツト分とビーム17,21の各周辺部3〔第1
図b参照〕を加えた量となり、またオーバラツプ
がない場合にはビーム18,19,20の3シヨ
ツト分とビーム17,21の各周辺部3の裾の部
分を加えた量となる。従つて各シヨツトのつなぎ
目の部分の露光量は最大の場合で5シヨツト分以
下、最小の場合で3シヨツト分以上となるので、
露光量はパターン11全域にわたつて4シヨツト
分±1シヨツト分以内となる。つまり本実施例に
おいては露光量の変動は±25〔%〕以下となり、
従来法において最大±100〔%〕の変動があつた
のに比較すると大幅に改善された。その結果得ら
れたパターン11は、各シヨツトのつなぎ目に生
じるふくらみやへこみがなくなるか、あつても非
常に小さなものとなりきわめてなめらかなパター
ンとなつた。
In the pattern 11 obtained as described above, an exposure amount of 4 bits is given to all the remaining parts except for the joints between each shot. In addition, the exposure amount at the joint between each shot, for example, the connection between beams 17 and 21, is for three shots of beams 18, 19, and 20 and 3 for each peripheral portion of beams 17 and 21 when beams 17 and 21 overlap. [1st
If there is no overlap, the amount is the sum of the three shots of the beams 18, 19, and 20 and the bottom portions of the peripheral portions 3 of the beams 17 and 21. Therefore, the exposure amount at the joint between each shot is less than 5 shots in the maximum case, and more than 3 shots in the minimum case.
The exposure amount is within 4 shots ± 1 shot over the entire pattern 11. In other words, in this example, the variation in exposure amount is ±25 [%] or less,
This was a significant improvement compared to the conventional method, which had fluctuations of up to ±100%. The pattern 11 obtained as a result had no bulges or dents occurring at the joints between the shots, or even if there were bulges or dents, they were very small, resulting in an extremely smooth pattern.

以上の説明で既に明らかなごとく、描画したパ
ターン内における露光量の変動は±100/n
〔%〕以下となる。本実施例ではn=4とした
が、nの値は任意に選択してよく、nを大にする
ことにより露光量の変動をより小さくすることが
できる。
As is already clear from the above explanation, the variation in exposure amount within the drawn pattern is ±100/n.
[%] or less. In this embodiment, n=4, but the value of n may be arbitrarily selected, and by increasing n, the fluctuation in exposure amount can be made smaller.

上記nは必ずしも整数でなくてもよく、またビ
ーム長さを増大、縮小する割合も必ずしも一定で
なくてもよいが、その場合にはビームの大きさ及
び位置の制御が非常に煩雑となる。従つて実用的
にはnを整数に選び、各シヨツト毎のビーム長さ
の増大、縮小量及び位置の移動量はすべてl/n
とするのがよい。
The above n does not necessarily have to be an integer, and the rate at which the beam length is increased or decreased does not necessarily have to be constant, but in that case, controlling the size and position of the beam becomes very complicated. Therefore, in practice, n is chosen as an integer, and the amount of increase and decrease in beam length and amount of position movement for each shot are all l/n.
It is better to

上記−実施例では横(X軸方向)に長いパター
ンを描画する例を掲げて説明したが、本発明は描
画すべきパターンが縦(Y軸方向)に長いパター
ンであつても斜めパターンであつても、またパタ
ーン形状は矩形に限らず平行四辺形等他の形状で
あつても本発明を用いて描画することができる。
In the above-mentioned embodiment, an example of drawing a long pattern horizontally (in the X-axis direction) has been described, but the present invention can be applied even if the pattern to be drawn is long in the vertical direction (in the Y-axis direction) or is a diagonal pattern. However, the pattern shape is not limited to a rectangle, but even other shapes such as a parallelogram can be drawn using the present invention.

なお特に図示はしていないが、矩形ビーム長さ
の増大、縮小はビーム整形用の複数個のアパーチ
ヤの間に配設されている整形用デフレクタ及びビ
ーム位置ぎめ用デフレクタを制御することによ
り、またビームの移動は上記位置ぎめ用デフレク
タを制御することによりなし得ることは特に説明
するまでもない。
Although not particularly shown in the drawings, the length of the rectangular beam can be increased or decreased by controlling the deflector for beam shaping and the deflector for beam positioning, which are arranged between a plurality of apertures for beam shaping. It goes without saying that the beam can be moved by controlling the positioning deflector.

以上説明したごとく本発明により、各シヨツト
間のつなぎ目においても凹凸のないパターンを描
画し得る可変形状電子ビーム露光方法が提供され
た。
As explained above, the present invention provides a variable shape electron beam exposure method that can draw a pattern without unevenness even at the joints between shots.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の可変形状電子ビーム露光方法の
説明に供するための図、第2図は本発明の一実施
例の描画手順を説明するための図である。 図において、1は矩形ビーム、11は描画すべ
き細長いパターン、12はビームの移動方向を示
す矢印、13,14は描画始点側及び終点側端
部、15〜26は矩形ビーム、15′〜18′は描
画始点側端部、23″〜26″は描画終点側端部、
lは当該描画過程で使用する矩形ビームの最大長
さを示す。
FIG. 1 is a diagram for explaining a conventional variable shape electron beam exposure method, and FIG. 2 is a diagram for explaining a drawing procedure according to an embodiment of the present invention. In the figure, 1 is a rectangular beam, 11 is an elongated pattern to be drawn, 12 is an arrow indicating the moving direction of the beam, 13 and 14 are ends on the drawing start point side and the end point side, 15 to 26 are rectangular beams, and 15' to 18 ' is the end on the drawing start point side, 23'' to 26'' is the end on the drawing end point side,
l indicates the maximum length of the rectangular beam used in the drawing process.

Claims (1)

【特許請求の範囲】[Claims] 1 試料面における電子ビームの投影像を所望の
形状に整形し、該整形ビームを所定のピツチで移
動させて所望のパターンを描画する可変形状電子
ビーム露光方法において、描画開始に当つては描
画すべきパターンの描画始点側端部に整形ビーム
の描画始点側端部を一致させ、各シヨツト毎に該
整形ビームの描画始点側端部を固定したまま整形
ビームの長さを段階的に増大し、該整形ビームの
長さが当該露光過程において使用する整形ビーム
の最大長さに達した後は該最大長さの整形ビーム
を各シヨツト毎に該整形ビームの最大長さより小
なるピツチで移動せしめ、該整形ビームの終点側
端部が描画すべきパターンの終点側端部に到達し
た後は、整形ビームの終点側端部を固定したまま
各シヨツト毎に整形ビームの長さを段階的に縮小
し、描画すべきパターンのすべての部分に略一様
に複数シヨツトの露光を行なうことを特徴とする
電子ビーム露光方法。
1 In a variable-shape electron beam exposure method in which a projected image of an electron beam on a sample surface is shaped into a desired shape and the shaped beam is moved at a predetermined pitch to draw a desired pattern, at the start of drawing, The end of the shaped beam on the drawing start point side is made to coincide with the end on the drawing start point side of the pattern to be drawn, and the length of the shaped beam is increased stepwise for each shot while the end of the shaped beam on the drawing start point side is fixed; After the length of the shaped beam reaches the maximum length of the shaped beam used in the exposure process, the maximum length of the shaped beam is moved at a pitch smaller than the maximum length of the shaped beam for each shot, After the end point side end of the shaped beam reaches the end point side end of the pattern to be drawn, the length of the shaped beam is reduced step by step for each shot while keeping the end point side end of the shaped beam fixed. , an electron beam exposure method characterized in that multiple shots are exposed substantially uniformly to all parts of a pattern to be drawn.
JP55187233A 1980-12-29 1980-12-29 Exposure of electron beam Granted JPS57112016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187233A JPS57112016A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187233A JPS57112016A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Publications (2)

Publication Number Publication Date
JPS57112016A JPS57112016A (en) 1982-07-12
JPS6145375B2 true JPS6145375B2 (en) 1986-10-07

Family

ID=16202379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187233A Granted JPS57112016A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Country Status (1)

Country Link
JP (1) JPS57112016A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269818U (en) * 1988-11-17 1990-05-28
JPH0639788U (en) * 1992-10-30 1994-05-27 スミ株式会社 Food container

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957428A (en) * 1982-09-27 1984-04-03 Matsushita Electronics Corp Forming method for pattern
JPH02123731A (en) * 1988-11-02 1990-05-11 Nippon Telegr & Teleph Corp <Ntt> Pattern drawing method
JPH0330313A (en) * 1989-06-27 1991-02-08 Matsushita Electric Ind Co Ltd Fine pattern formation
JP2000306818A (en) * 1999-04-23 2000-11-02 Nec Kansai Ltd Exposure method of stripe pattern
JP2004214526A (en) * 2003-01-08 2004-07-29 Riipuru:Kk Charged particle exposure method, complementary division mask used for the method, and semiconductor device manufactured using the method
JP2008025560A (en) * 2006-06-23 2008-02-07 Yamaha Motor Co Ltd Motorcycle

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269818U (en) * 1988-11-17 1990-05-28
JPH0639788U (en) * 1992-10-30 1994-05-27 スミ株式会社 Food container

Also Published As

Publication number Publication date
JPS57112016A (en) 1982-07-12

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